Further investigations on ir pumping of CH3OD and CD3OD by a cw CO2 laser

Respectively, 41 and 36 new cw far-infrared lasing lines have been observed using a waveguide resonator in CH₃OD and CD₃OD pumped by a low-pressure CO₂ laser emitting in the 9.4, 10.4 m regular bands and in the 10.8 m hot band. The wavelength range was 46.6 m–1.67 mm in CH₃OD and 53.6 m–1 mm in CD₃OD.     

Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL

We report on the design, fabrication, and characterization of InP-based 1.55 μm wavelength large diameter (50 μm) electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs). The hybrid device consists of a half vertical cavity surface emitting laser (1/2-VCSEL) structure assembled with a concave dielectric external mirror. The 1/2-VCSEL is monolithically grown on InP substrate and includes a semiconductor Bragg mirror and a tunnel junction for electrical injection. Buried (BTJ) and ion implanted (ITJ) tunnel junction electrical confinement schemes are compared in terms of their thermal and electrical characteristics. Lower thermal resistance values are measured for BJT, but reduced current crowding effects and uniform current injection are evidenced for ITJ. Using the ITJ technique, we demonstrate Room-Temperature (RT) continuous-wave (CW) single transverse mode laser operation from 50-μm diameter EP-VECSEL devices. We show that the experimental laser optical output versus injected current (L–I) curves are well-reproduced by a simple analytical thermal model, consistent with the thermal resistance measurements performed on the 1/2-VCSEL structure. Our results indicate that thermal heating is the main mechanism limiting the maximum CW output power of 50-μm diameter VECSELs, rather than current injection inhomogeneity.     

Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers

In the paper, a comprehensive fully self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined long-wavelength 1.3-m quantum-dot (QD)(InGa)As/GaAs vertical-cavity surface-emitting diode lasers is demonstrated. The model has been intentionally prepared for the PC-class microcomputers to enable its easy application in designing optimal structures of the above devices with desired performance characteristics. An impact of some structure parameters on QD VCSEL room-temperature (RT) continuous-wave (CW) lasing thresholds is discussed. A stable RT CW operation on a single fundamental mode has been found to be possible in modern QD VCSELs with active regions containing more uniform and more dense QDs in stacks of QD layers. The desired single fundamental-transverse-mode operation is possible for smaller active regions of diameters not exceeding 8 m. In the case of larger active regions, on the other hand, higher-order transverse modes of an increasing order are excited first because of increasingly more non-uniform optical-gain distributions.     

A wide spectral band photodetector with PtSi/p-Si Schottky-barrier

The photoresponse of a front-illuminated PtSi Schottky-barrier detector is measured in the wavelength range between 0.4 and 5.2m. In the wavelength range longer than 1.1m, the detection mechanism is the internal photoemission. On the other hand, the intrinsic mechanism becomes dominant in the wavelength range shorter than 1.1m. The measured data are in good agreement with values calculated from these two detection mechanisms. The photoresponse depends on the PtSi thickness in both wavelength ranges. For getting a high responsivity, it is important to make a thin uniform metal film. The visible and the thermal image with a PtSi Schottky-barrier wide spectral band imager are also demonstrated.     

Fabrication and low threshold current density CW operation of GaInAsP/InP multiple-reflector microcavity laser

We report CW operation of a GaInAsP/InP multiple-reflector microcavity (MRMC) laser operated at fairly low threshold current density. The threshold current density with broad contact (stripe widthW=240 m, cavity lengthL=60 m) under pulsed operation was 180 A cm^–2 (l _th=20 mA), and was 230 A cm^–2 under CW operation at room temperature operating at 1.52 m wavelength.     

Analysis and design of highly broad-band,planar evanescent couplers

It is shown that by taking advantage of the maximum in the spectral dependence of the coupling coefficient, very broad-band symmetric and asymmetric single-mode planar couplers can be designed. The symmetric coupler allows at least 95.6% coupling between the two cores over the wavelength range 1.3–1.58 m, while the asymmetric coupler can act as a 3 dB splitter with only ±1.6% variation in the splitting ratio over the wavelength range 1.3–1.67 m. In both cases, the design includes the curved input-output arms, and the estimated bend loss is approximately 0.1 dB.     

An Efficient Technique for Analyzing Transmission Characteristics of Arrayed Waveguide Grating Multiplexers

An efficient technique is presented for analyzing transmission characteristics of arrayed waveguide grating (AWG) multiplexers. As an example, calculations using this technique are performed for a polymer 33 × 33 AWG multiplexer around the central wavelength of 1.55 m with the wavelength spacing of 0.8 nm. Computed results show that this technique possesses high accuracy for analyzing the power profile, diffraction efficiency, transmission spectrum, free spectral range and crosstalk of the AWG multiplexer.     

Zero-field μSR and low-temperature μ+ diffusivity in copper

In this paper I review the history of ⁺ diffusion studies in copper, with particular emphasis on the increased low-temperature diffusivity which has been known for several years now. I survey the theory and practice of the zero-fieldSR method, which has come into increasing favor in the study of muon diffusion and trapping in metals, and discuss its application to the low-temperature copper problem.     

A new doping superlattice photodetector

A new GaAs photodetector with high sensitivity in the whole 0.8–1.4m wavelength range has been fabricated from totally depleted GaAs doping superlattices grown by molecular beam epitaxy. Photoexcited electrons and holes are separated in real space by the space-charge field of the doping superlattice immediately after excitation, yielding a high quantum efficiency of this device. Because of the complete depletion, the doping superlattice behaves like a highly resistive material, which allows application of high electric field along the layers via selectiven ⁺ — andp ⁺ -electrodes. The sensitivity of this device at 1.3 m reaches more than 90% of the original band edge response at 0.85 m, and the external quantum efficiency amounts to 65% at 0.85 m. This excellent photoresponse at longer wavelengths arises from an extremely high electric field composed of the intrinsic space charge field and applied external field, and from the existence of pronounced tail states in the forbidden gap region of the superlattice.     

A pulsed surface muon beam andμSR facilities proposed for the UK

The Spallation Neutron Source, SNS, under construction in the United Kingdom offers the possibility of an intense pulsed pion or muon source and aSR facility for condensed matter spectroscopy has been proposed.A design and specification is presented for a pulsed surface muon beam. Features include negligible electron contamination, the possibility of rotating the polarisation and — particularly important — the capability of varying the pulse width. Operation with cloud muons of both charge signs up to 70 MeV/c and with pions up to 200 MeV/c would also be possible. The pulsed nature of the source would allow the full muon intensities to be used forSR experiments. The potential performance is such that an optimised facility would increase the world total muon stop rate for conventional time-differentialSR by an order of magnitude.The majority ofSR applications would benefit simply from the increased intensity, some benefit especially from the frame-length and duty cycle. Emphasis is to be placed on longitudinalSR, on the development of RF techniques (particularly for chemical applications) and onSR in conjunction with synchronous pulsed excitation of the sample. A scheme for the excitation of a certain bandwidth within a high frequencySR spectrum, to display individual spectral lines for instance, is proposed.     

Muonium in semiconductors: Recent experimental developments

Recent experiments covering a range of problems including the nuclear hyperfine structure of bond-centered muonium in diamond and GaP, charge-cycling reactions of muonium in Si at high temperatures, muonium state dynamics in Si probed by RF-SR, and endohedral muonium in semiconducting C₆₀ compounds, are discussed. These examples show that as traditionalSR techniques are continually being refined and new methods are being developed,SR is becoming an increasingly powerful tool to investigate the behavior of muonium and the in many respects analogous, and technologically relevant, hydrogen centers in semiconductors.     

Investigation of Epithermal Molecular Formation and Hyperfine Interaction Effects on Kinetics of μCF

The role of epithermal effects in muon catalyzed fusion specially in the H/D/T mixture is investigated by Monte Carlo method. The results of the Monte Carlo simulation are used in the kinetics of CF in the steady-state condition. For this purpose we determine the values of thermalization rate (_th) and the probability of the dt molecular formation by epithermal t atoms during thermalization processes ( parameter). We have shown that including the epithermal effects in the kinetics of CF in different concentrations of hydrogen isotopes, increases the fusion yield per muon and it is not ignorable even in the D/T mixture. The reduction of the CF efficiency due to increasing the protium concentration is definitely confirmed here, even though the important effects such as the epithermal molecular formation, Ramsauer–Townsend effect and the hyperfine interactions are taken into account. We have shown that the epithermal effects disappear rapidly, whereas the unfavorable effects due to increasing protium, such as highly sticking probability in the pd and pt cycles, affect the fusion yield for a longer period of time. Recent experimental results at JINR in the H/D/T mixture are compatible with our conclusions.     

Neutron diffraction study of the heavy fermion superconductors UM2Al3(M=Pd,Ni)

An elastic neutron scattering study was performed on the new superconducting heavy fermion systems UPd₂Al₃ and UNi₂Al₃. The neutron diffraction patterns reveal unambiguously long range antiferromagnetic order in UPd₂Al₃ with an ordered magnetic moment _U = (0.85±0.03) _B , which coexists with the superconducting state. This is by far the largest _U value observed for any heavy fermion superconductor. For UNi₂Al₃, no long-range magnetic order could be observed for temperaturesT1.5 K, yielding an upper limit of the ordered moment of 0.2 _B .     

High-efficiency continuous-wave diode-pumped Tm:Ho:LuAG laser at 2.1 μm

Continuous Wave (CW) laser action has been observed from a Ho:Tm:LuAG rod at 2.1 m pumped by a diode laser at 785 nm in the temperature range of 77–200 K. The maximum power observed was 1.38 W at an incident power of 4 W at a crystal temperature of 77 K. The optical-to-optical conversion efficiency was observed to be 35.6% at a threshold power of 0.2 W with a 95% output coupling mirror.     

Q-switched Yb 3+ :YVO 4 laser with Raman self-conversion

We report the efficient continuous-wave (CW) and Q-switched laser operation of a diode-pumped Yb:YVO₄ laser. A CW output power of 1 W with a slope efficiency of 59% with respect to absorbed pump power was demonstrated. Passively Q-switched with a Cr⁴⁺:YAG saturable absorber, a Yb:YVO₄ laser with Raman conversion was demonstrated. Q-switched 18.7- J pulses with a pulse duration of 17 ns and a peak power up to 1 kW were obtained at 1018-nm fundamental wavelength and 3.6- J pulses with a pulse duration of 6 ns and a peak power of about 0.6 kW were obtained at 1119.5-nm first-Stokes wavelength.This revised version was published online in March 2005. In the previous version, the published online date was missing     

Submillimeter emission lines from CD2Cl2 optically pumped lasers

Fifty-five new submillimeter laser lines from optically pumped CD₂Cl₂, have been obtained in a FIR metallic waveguide resonator. Twenty-seven lines, ranging from 184 m to 1387 m, and twenty-eight lines, from 219 m to 888 m, have been observed when using CW CO₂ laser and CW N₂O laser optical pumping, respectively. The accuracy of wavelength measurements are of the order of 3.10^–3.     

Laser damage in silicon photodiodes

Thermal damage of silicon photodiodes exposed to intense optical radiation is investigated. Damage thresholds of Si photodiodes irradiated by 1.06m laser pulses are reported for values of irradiation time,, ranging from 10^–8 to 1s. Threshold laser irradiation produces visible microscopic damage and a permanent degradation in photoresponse. The loss of responsivity is associated with degradation of the detector diode characteristics due to laser-induced heating. The time and wavelength dependence agree with the predictions of a thermal model which treats a semi-infinite material irradiated by a Gaussian laser beam. The energy density thresholds are independent of for short irradiation times and asymptotically approach a limiting behaviour which increases as for long times. They are given by the empirical relationE ₀=65[1+217/tan^–1(258)^1/2] J cm^–2 for 1.06m radiation. The thresholds at short irradiation times of detectors damaged by 1.06m radiation are about 25 times larger than those of detectors exposed to 0.6943m radiation. The greater susceptibility at 0.6943m is attributed to a larger optical absorption coefficient.     

Measurement of Optical Constants of CVD-Diamond for Short-Wavelength Far-Infrared Lasers

A diagnostic system using short-wavelength far-infrared (FIR) lasers (40–70 m in wavelength) is now being developed for high density and large volume plasmas. In the wavelength region, a CVD-diamond is the excellent materials for optical windows of the laser and the plasma vessel and beam splitters of a multichannel interferometer. To design these optical elements, the optical constants (refractive index n, absorption coefficient and transmissivity T) of the CVD-diamond have been measured precisely by using FIR lasers of 48-, 57- and 71-m in wavelength. As an example, the result for 57.1511 m light is n = 2.383(1) ± 0.002, = 0.19 ± 0.05 cm^-1 and T = 97.5 ± 1.5% at 1.023 mm in thickness.     

Photodynamic Therapy for Cancer Cells Using a Flash Wave Light Xenon Lamp

We determined photodynamic therapy (PDT) efficacy using a flash wave (FW) and a continuous wave (CW) light, of which the fluence rate was 70 W/cm², for murine thymic lymphoma cells (EL-4) cultivated in vitro. The irradiation frequency and the pulse width of the FW light were in the range of 1–32 Hz and less than one millisecond, respectively. 5-Aminolevulinic acid-induced protoporphyrin IX (ALA-PpIX) was used as a photosensitizer. When EL-4 with ALA administration was irradiated by the light for 4 h (irradiation fluence: 1.0J/cm²), the survival rate of EL-4 by the FW light was lower than that by the CW light, except for the FW light with irradiation frequency of 32 Hz, and decreased gradually with decreasing irradiation frequency. Moreover, the FW light, especially at lower irradiation frequency, was superior to the CW light for the generation of singlet oxygen in an aqueous PpIX solution. Therefore, thehigher PDT efficacy for EL-4 of the FW light would be caused by the greater generation of singlet oxygen in the cells.