有序CdS纳米线阵列的制备和光学特性

应用直流电沉积法在多孔氧化铝模板中制备了高度有序的CdS纳米线阵列,并由XRD、Raman、SEM、TEM和HRTEM等进行物理化学表征.结果表明,沉积在多孔氧化铝模板中的CdS呈六角结构,c轴沿孔长度方向定向生长.紫外吸收光谱研究表明,随着纳米线尺寸的减小,纳米线阵列的吸收边向短波长方向移动,荧光光谱测量显示,CdS纳米线阵列的荧光强度高于氧化铝模板,而且在可见光区的荧光特性与激发波长无关.     

大长径比有序多孔阳极氧化铝模板的制备及用于镍纳米线阵列

报道一种恒电流二次氧化制备大长径比(>1000)阳极氧化铝(AAO)模板的方法,研究氧化时间和氧化电流密度分别对制备的AAO模板的表面形貌、孔径大小、厚度等的影响.结果表明,AAO模板的表面形貌及厚度n受m氧、厚化度电约流为密2度00及μ氧m、化长时径间比的为影10响0;-当13氧00化的电高流质密量度A为AO8模m板A·.c采m用-2电时化,氧学化沉1积8方h能法在制制备备出的孔A径A为O模15板0-的20孔0中成功制备了Ni纳米线阵列,分别用扫描电镜(SEM)、高分辨透射电镜(HRTEM)、X射线衍射(XRD)和X射线能量散射光谱(EDS)对其进行了表征;结果显示,制备的Ni纳米线排列整齐有序,每根Ni纳米线直径几乎相同,约150nm,长度约为180-200μm,长径比为1200-1300,与AAO模板的参数一致.研究了Ni纳米线阵列的长径比对其磁性能的影响,发现大长径比的Ni纳米线阵列具有明显的磁各向异性,而长径比约为200的Ni纳米线阵列未表现出明显的磁各向异性.本文结果表明,恒电流二次氧化方法能制备大长径比的AAO模板,并能用于制备大长径比的一维纳米材料阵列,可望在制备具有特殊光学、磁学等性能材料方面得到应用.     

ZnO纳米线阵列的电沉积法制备及表征(英文)

利用直流电沉积方法在多孔氧化铝模板的孔洞中生成锌纳米线,在氧气氛围中,于800°C下氧化2h,将氧化铝中的锌氧化成氧化锌.本研究利用氧气氛围进行锌的氧化,大大提高了传统方法的氧化锌纳米线的制备效率.用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)和X射线衍射仪(XRD)对其形貌及成分进行表征和分析,结果表明,氧化铝模板的有序孔洞中填充了大尺寸、均匀连续的多晶态氧化锌纳米线.纳米线具有约1000:1的高纵横比,其长度等于氧化铝模板的厚度,直径约为80nm.光致发光(PL)光谱表明,氧化锌纳米线在504nm处有由于氧空位引起的较强蓝绿光发射.这为进一步研究ZnO/AAO组装体发学性质和开发新型功能器件提供了基础.     

一种新的WO3纳米管的制备方法

一维纳米材料因可用来构造高性能纳米器件的结构单元而成为纳米材料研究的热点．目前的研究重点集中在材料的制备和结构性能表征方面,已发展了多种制备方法,主要有模板法、V-L-S法、L-L-S法和V-S法等,其中阳极氧化铝(AAO)模板法是制备一维材料的好方法．AAO模板的制备工艺已相当成熟,     

模板法制备高度有序的聚苯胺纳米纤维阵列

近年来,利用化学或物理方法制备多种材料的纳米有序阵列复合结构已成为学术界的研究热点．用具有纳米孔洞的模板(多孔阳极氧化铝、多孔硅以及聚碳酸脂膜)制备的金属、半导体、碳纳米管等材料的纳米有序阵列复合结构已在润滑、微电极、单电子器件、传感器、垂直磁记录、场致电     

铅纳米线阵列的制备

使用电化学沉积方法,在有序的氧化铝模板(AAO)孔洞中制备了铅纳米线有序阵列。用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)对样品的结构、形貌、进行表征和观测。XRD的结果表明所制备的样品为纯的立方面心铅,且纳米线生长沿<220>有很好的取向。FE-SEM的图片清晰地说明铅纳米线阵列是大面积、高填充率和高度有序的。TEM的结果显示纳米线直径均匀、表面光滑且长径比大。     

Highly ordered MnO2 nanowire array thin films on Ti/Si substrate as an electrode for electrochemical capacitor

AAO/Ti/Si substrate was successfully synthesized by a two-step electrochemical anodization of the aluminum film on the Ti/Si substrate and then used as template to grow nanowire arrays. The ordered MnO₂ nanowire arrays with about 40 nm diameters had been directly fabricated on AAO/Ti/Si substrate by direct current (DC) electrodeposition. The microstructure of the nanowire arrays was investigated by field-emission scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Their electrochemical characterization was performed using cyclic voltammetry in 0.5 M Na₂SO₄ aqueous solution. The synthesized MnO₂ nanowires had amorphous nature until 400 °C. The deal capacitive behavior was obtained when the as-prepared sample was heat-treated at 200 °C. The specific capacitance of the electrode was about 254 F/g.     

Pt纳米线阵列的氧还原催化性能

采用阳极氧化铝(AAO)模板法电化学沉积制备了Pt纳米线阵列(Pt NWs)氧还原催化剂, 通过扫描电子显微镜(SEM)、透射电子显微镜(TEM)和电化学测试对Pt纳米线阵列催化剂的形貌和电催化性能进行了表征. 循环伏安法(CV)研究表明Pt纳米线阵列催化剂的电化学活性面积大于其几何面积; 旋转圆盘电极(RDE)测试研究发现, 制备的Pt纳米线阵列催化剂的氧还原反应(ORR)曲线的半波电势相对Pt/C的有正移, 并且Pt纳米线阵列催化剂的极限扩散电流比Pt/C大.     

不同取向的CoSb3纳米线阵列的电化学法制备

近年来,金属纳米线及其阵列由于其新奇的物理和化学特性和在纳米器件方面潜在的应用前景,越来越受到人们的关注。氧化铝模板合成一维纳米材料具有设备简单、制作方便等优点,因而成为近年来人们常用的一种方法。利用电化学沉积的方法在多孔氧化铝模板中沉积各种成分的纳米线已成为纳米材料制备的一种常见的方法。这种方法不仅可以得到大面积有序的纳米线阵列,还可以根据需要调节孔洞的大小来控制纳米线的直径[1￣3]。最近理论研究结果预言[4￣6],由于纳米材料的量子限域效应,热电材料的纳米线将有比其相应块体材料更高的品质因数n,这极大地激…     

Template-directed synthesis of ordered single-crystalline nanowires arrays of Cu2ZnSnS4 and Cu2ZnSnSe4

Highly ordered quaternary semiconductor Cu(2)ZnSnS(4) nanowires array have been prepared via a facile solvothermal approach using anodic aluminum oxide (AAO) as a hard template. The as-prepared nanowires are uniform and single crystalline. They grow along either the crystalline [110] or [111] direction. The structure, morphology, composition, and optical absorption properties of the as-prepared Cu(2)ZnSnS(4) samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectrometry. A possible formation mechanism of the nanowire arrays is proposed. Governed by similar mechanism, we show that Cu(2)ZnSnSe(4) nanowire array with similar structural characteristics can also be obtained.     

大面积Bi单晶纳米线阵列的制备

在有序的氧化铝模板(AAO)的孔洞中, 采用电化学沉积工艺成功地制备了准金属Bi纳米线有序阵列. 使用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)及高分辨电子显微镜(HRTEM)对样品的结构和形貌进行了表征. XRD结果表明, 所制备的铋样品为六方相, 且沿[110]方向有很好的生长取向; FE-SEM图片清晰地说明铋纳米线阵列是大面积、填充率高和高度有序的; TEM的结果显示纳米线直径均匀、表面光滑且长径比大; HRTEM图片中清晰的晶格条纹和选区电子衍射(SAED)结果表明纳米线是单晶.     

MnS纳米线阵列上MnS花状球的水热合成

通过水热处理的方法,在氧化铝模板表面生成的MnS纳米线阵列上合成了六方相MnS花状球。利用场发射扫描电镜,透射电子显微镜,高分辨透射电子显微镜,选区电子衍射和X射线衍射对制备的样品进行了分析与表征。结果表明MnS花状球是在MnS纳米线阵列上生长的,纳米线的直径为70～80nm,与氧化铝模板的孔径一致且结晶性较好。随着阳极氧化氧化铝模板(AAO)的孔洞长度的减少,MnS花状球的数量快速增加。提出了MnS复合纳米结构可能的生长机制:氧化铝模板和反应中硫脲分解产生的H2S气体对产物的最终形貌有很重要的影响。室温光致发光光谱显示在420nm处存在一个很强的MnS带边发射峰。     

电化学法制备Ni-W-P纳米线阵列电极及其催化析氢性能

采用二次氧化法制备了多孔阳极氧化铝(AAO)模板, 通过控制电位沉积技术在AAO模板内组装了Ni-W-P合金纳米线阵列. 在扫描电子显微镜(SEM)下观察到Ni-W-P纳米线表面光滑, 长约20 μm, 直径均匀(约为100 nm), 与AAO模板孔径基本一致. 阴极极化曲线和交流阻抗图谱(EIS)的测试结果表明, Ni-W-P合金纳米线阵列电极析氢反应(HER)电阻减小, 具有更高的催化析氢活性, 电流密度为10 mA·cm^-2时, 析氢极化电位较Ni-W-P合金电极正移约250 mV.     

Preparation of well-aligned carbon nanotubes/silicon nanowires core-sheath composite structure arrays in porous anodic aluminum oxide templates

The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (/-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be     

Fabrication and characterization of single-crystalline ZnTe nanowire arrays

Semiconductor ZnTe nanowire arrays have been synthesized by the pulsed electrochemical deposition from aqueous solutions into porous anodic alumina membranes. X-ray diffraction analyses show that the as-synthesized nanowires have a highly preferential orientation. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy indicate that high-filling, ordered, and single-crystalline nanowire arrays have been obtained. The optical absorption spectra of the nanowire arrays show that the optical absorption band edge of the ZnTe nanowire array exhibits a blue shift compared with that of bulk ZnTe. The growth mechanism and the electrochemical deposition process are discussed together with the chemical compositions analysis.     

模板合成H4PMo11VO40/聚苯胺纳米线列阵及其聚合机理探讨

在氧化铝模板中制备了HPA/PANI纳米线列阵,SEM、TEM表明列阵中纳米线直径约为80 nm;XRD与FT-IR证明形成了有效掺杂;单根纳米线的导电率为16.2 S.cm-1;材料的TG-DTA表明PANI纳米线材料有三步失重过程,失去吸附水过程,多酸失去结晶水和PANI结构持续分解过程,多酸结构分解过程;在氧化聚合过程中H4PMo11VO40即为质子酸又为氧化剂和掺杂剂;聚合反应采用自由基机理进行,掺杂反应发生在形成醌二亚胺式自由基正离子和双苯胺式自由基正离子和醌二亚胺式自由基正离子偶联聚合成链结构时.     

双槽法电沉积Cu/Ni多层纳米线有序阵列

以多孔阳极氧化铝（AAO）为模板，采用双槽法电沉积工艺制得高度有序的Cu/Ni多层纳米线阵列。利用扫描电镜（SEM）和透射电镜（TEM）对Cu/Ni多层纳米线进行了表征，观察到纳米线表面平滑，多层结构清晰，各子层厚度均匀，直径约为 100 nm，与AAO模板孔径基本一致。由选区电子衍射（SAED）照片可知，多层纳米线中Cu层和Ni层均为单晶结构。振动样品磁强计（VSM）测试结果表明，Cu/Ni多层纳米线阵列具有明显的垂直磁各向异性，外加磁场垂直和平行于AAO模板表面时，磁滞回线的矩形比分别为 0.701 和 0.101 ，矫顽力分别为 589 Oe和 202 Oe。通过控制铝阳极氧化工艺及电沉积时间，可获得不同直径、不同子层厚度的Cu/Ni多层纳米线阵列。     

Template induced sol-gel synthesis of highly ordered LaNiO3 nanowires

The highly ordered LaNiO₃ nanowires of the rare-earth perovskite-type composite oxide were controlled synthesized within a porous anodic aluminum oxide (AAO) template by means of sol-gel method using nitrate as raw materials and citric acid as chelating agent. The results of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) revealed that the obtained LaNiO₃ nanowires had a uniform length and diameter, which were determined by the thickness and the pore diameter of the applied AAO template. The results of X-ray diffraction (XRD) and the selected-area electron diffraction (SAED) indicated that the LaNiO₃ nanowires were perovskite-type crystalline structures. Furthermore, X-ray photoelectron spectroscopy (XPS) and the energy dispersive X-ray (EDX) spectroscopy demonstrated that the stoichiometric LaNiO₃ was formed.     

SERS,AFM and Electrochemical Characterization of Metal Nanorod and Nanowire Arrays

Metal nanowires (nanorods) have novel properties and potential applications in a wide field^[1]. Many two-dimensional nanowire arrays of semiconductors and metals with different diameter and length have been made using template synthesis method^[2]. The nanorod arrays of various metals (e.g., Cu, Ag,Au, Ni and Co) with different diameters from about 15 nm to 130 nm were fabricated by electrodeposition of the metals into the highly ordered nanochannel arrays in alumina film followed by partial removal of the film in phosphoric acid or sodium hydroxide. In the present work, surface-enhanced Raman spectroscopy (SERS), AFM and electrochemical methods have been used to characterize the metal nanorod (nanowire) arrays. Tapping mode AFM and SERS were performed on Nanoscope Ⅲa (Digital Instruments) and on confocal Raman microscopy (LabRam I,Dilor) respectively.     

模板组装Fe纳米线阵列及其微结构

铝在硫酸溶液中经直流阳极氧化,得到多孔铝阳极氧化膜(AAO). 以AAO膜为模板,通过交流电沉积的方法,在AAO模板孔内成功组装了Fe纳米线.TEM分析表明,Fe纳米线的长度约为2.5 μm,其长度分布十分均匀；粗细均匀,直径约为25 nm. XRD实验分析证实,所制备的Fe纳米线为α-Fe.选区电子衍射（SAED）实验分析表明,α-Fe纳米线具有单晶结构.