Elementary quantum-dot gates for single-electron computing

A new approach to the implementation of certain logical functions in quantum-dot gates for single-electron computing is proposed. It is shown that placing a gate in a uniform external magnetic field allows one to construct gates with 1) symmetric physical truth tables and 2) large (in some cases close to saturated) absolute magnitude of the average spin at the output dots. Thus two serious obstacles are removed which otherwise could present a problem in the fabrication of a set of coupled quantum-dot gates. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 3, 214–218 (10 August 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

单电子晶体管通断图及其分析

通过研究单电子晶体管在电路中的静电能量的变化,得到了它的阻塞、导通情况与其两端偏压和控制栅压之间的关系,从而给出了它的通断图.并且发现单电子晶体管的对外特性主要由其对外的总电容决定;而单电子岛两个隧道结电容的不同主要反映在通断图上由隧道结电容所决定的晶体管阻塞、导通边界线上,这两条边界线同时也与外电路有关 关键词： 单电子晶体管 库仑阻塞 隧穿     

Spin-dependent quasiparticle transport in aluminum single-electron transistors

We investigate the effect of Zeeman splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single-electron transistors (SETs). In the above-gap transport, the interplay of Coulomb blockade and Zeeman splitting leads to spin-dependence of the sequential tunneling. This creates regimes where either one or both spin species can tunnel onto or off the island. At lower biases, spin-dependence of the single quasiparticle state is studied, and operation of the device as a bipolar spin filter is suggested.     

Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation. Received 6 May 1998     

Field-emission-induced electromigration method for the integration of single-electron transistors

We report a simple and easy method for the integration of planar-type single-electron transistors (SETs). This method is based on electromigration induced by a field emission current, which is so-called “activation”. The integration of two SETs was achieved by performing the activation to the series-connected initial nanogaps. In both simultaneously activated devices, current-voltage (I_D-V_D) curves displayed Coulomb blockade properties, and Coulomb blockade voltage was also obviously modulated by the gate voltage at 16 K. Moreover, the charging energy of both SETs was well controlled by the preset current in the activation.     

Proximity effect of electron beam lithography on single-electron transistors

A simple method, based on the proximity effect of electron beam lithography, alleviated by exposing various shapes in the pattern of incident electron exposures with various intensities, was applied to fabricate silicon point-contact devices. The drain current (I _d) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the I _d oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems.     

Measurements of Kondo and spin splitting in single-electron transistors

We measure the spin splitting in a magnetic field B of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most precise value of the Zeeman energy Delta=/g/mu(B)B. In the same devices we also measure the splitting with B of the Kondo peak in differential conductance. The Kondo splitting appears only above a threshold field as predicted by theory. However, the magnitude of the Kondo splitting at high fields exceeds 2/g/mu(B)B in disagreement with theory.     

Spin accumulation and cotunneling effects in ferromagnetic single-electron transistors

Electron tunneling through small metallic particles (islands) coupled to two ferromagnetic electrodes is studied theoretically in the Coulomb blockade regime, where higher order tunneling processes play a significant role. Transport characteristics of the system are analyzed by the real-time diagrammatic technique. It is shown that the spin splitting of the electrochemical potential due to spin accumulation on the island should be detectable from the spacing between two resonances in the current–voltage characteristics.     

Giant fluctuations of superconducting order parameter in ferromagnet-superconductor single-electron transistors

Spin dependent transport in a ferromagnet-superconductor single-electron transistor is studied theoretically taking into account spin accumulation, spin relaxation, gap suppression, and charging effects. A strong dependence of the gap on the magnetic state of the electrodes is found, which gives rise to a magnetoresistance of up to 100%. We predict that fluctuations of the spin accumulation can play such an important role as to cause the island to fluctuate between the superconducting and normal states. Furthermore, the device exhibits a nearly complete gate-controlled spin-valve effect.     

SET-MOS混合结构的细胞神经网络及其应用

基于细胞神经网络（CNN）细胞单元的等效电路及其电学特性模型,利用SET-MOS混合结构反相器实现了模型中的激活函数电路,用耦合电容单元实现CNN细胞的系统模板,构建了SET-MOS CNN细胞硬件电路,并将其应用在图像处理中.仿真结果表明,所设计的CNN硬件电路具有结构简单、功耗低、响应速度快等特点,可用于构成各种规模的CNN电路,进一步满足大规模信号处理的需求及提高集成电路的集成度. 关键词： 单电子晶体管 MOS管 细胞神经网络 图像处理     

Sensitivity and linearity of superconducting radio-frequency single-electron transistors: effects of quantum charge fluctuations

We have investigated the effects of quantum fluctuations of quasiparticles on the operation of superconducting radio-frequency single-electron transistors (rf-SETs) for large values of the quasiparticle cotunneling parameter alpha = 8EJ/Ec, where EJ and Ec are the Josephson and charging energies. We find that, for alpha > 1, subgap rf-SET operation is still feasible despite quantum fluctuations that wash out quasiparticle tunneling thresholds. Surprisingly, such rf-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity.     

Radio-frequency single-electron refrigerator

We propose a cyclic refrigeration principle based on mesoscopic electron transport. Synchronous sequential tunneling of electrons in a Coulomb-blockaded device, a normal metal-superconductor single-electron box, results in a cooling power of approximately k(B)T x f at temperature T over a wide range of cycle frequencies f. Electrostatic work, done by the gate voltage source, removes heat from the Coulomb island with an efficiency of approximately k(B)T/Delta, where Delta is the superconducting gap parameter. The performance is not affected significantly by nonidealities, for instance by offset charges. We propose ways of characterizing the system and of its practical implementation.     

Inductive single-electron transistor

We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity 1.4 x 10(-4) e/square root Hz, limited by a preamplifier, is achieved in an operation mode which takes advantage of the nonlinearity of the Josephson potential. Owing to reactive readout, our setup has more than 2 orders of magnitude lower dissipation than the existing method of radio-frequency electrometry. With an optimized sample, we expect uncoupled energy sensitivity below variant Planck's over h in the same experimental scheme.     

Continuum limit of single-electron tunneling

We consider the continuum limit of the standard model for treating single-electron tunneling (SET) of electrons through a one-dimensional array of tunnel junctions. We show that the formalism reduces to the computation of the motion of overdamped particles undergoing potential gradient flow, with the potential being given by the full interacting free energy of the electrons in the system. We show that the tunneling coefficients in the SET model can be re-interpreted in terms of a diffusion coefficient and a temperature and that therefore the SET problem reduces to a fully self-consistent treatment of overdamped particle diffusion.     

柔性低温多晶硅薄膜晶体管的弯曲稳定性

研究了以聚酰亚胺为基板的p型低温多晶硅薄膜晶体管在不同弯曲半径下的偏压稳定性。当曲率半径从15 mm变到3 mm时,在拉伸弯曲状态下,阈值电压和平坦时保持一致(Vth=-1.34 V),迁移率μsat从45.65 cm~2/(V·s)降到45.17 cm~2/(V·s),开关比增大;在压缩弯曲状态下,转移特性曲线和平坦状态保持了非常好的一致性。在最小弯曲半径为3 mm时,进行了正负偏压稳定性测试,结果表明,器件依然具有很好的稳定性。     

Instabilities in quantum-dot spin-VCSELs

A modified spin-flip model is used to investigate the stability of optically-pumped quantum-dot spin-vertical cavity surface-emitting lasers. in terms of pump intensity and polarization. The stability maps exhibit pronounced polarization switching in the stable regions. Periodic oscillations in unstable regions are attributed to competition between spin relaxation and birefringence.     

一种新型的单电子A/D转换器

传统的A/D转换器结构复杂，利用一种改进的V-PADOX工艺可以制成性能均匀的互补的单电子 晶体管，工艺重复性好.用互补SET对结构实现了多阈值周期性传输功能，这可以用来简化A/ D转换电路.提出了一种利用该互补SET对结构实现的新型3位A/D转换器，具有结构简单、速 度快、功耗低等优点. 关键词： 库仑振荡 A/D转换器 互补单电子晶体管结构