螺型位错偶极子与界面钝裂纹的干涉效应

研究了螺型位错偶极子与界面钝裂纹的干涉效应.应用保角变换技术,得到了复势函数与应力场的封闭解析解,讨论了位错偶极子方位、臂长及裂纹钝化程度对位错偶板子屏蔽效应和发射条件的影响.结果表明,与单个螺型位错不同,螺型位错偶极子与x轴夹角在一定范围内时才可以降低界面钝裂纹尖端的应力强度因子(屏蔽效应),屏蔽效应随偶板子臂长的增大而增强,随裂纹钝化程度的增大而增强,屏蔽区域也随裂纹钝化程度的增大而增大;位错偶极子发射所需的临界无穷远加载随偶极子臂长的增加而减小,随位错方位角及裂纹钝化程度的增加而增大;最可能的位错偶极子发射角度为0.螺型位错偶极子的发射比单个螺型位错的发射要困难.本文解答的特殊情况与相关文献给出的解答一致.     

穿透夹杂界面的半无限楔形裂纹尖端螺型位错的发射研究

研究了穿透圆形夹杂界面的半无限楔形裂纹与裂纹尖端螺型位错的干涉问题.应用复变函数解析延拓技术与奇性主部分析方法,得到了位错位于半圆形夹杂内部时,半无限基体和半圆形夹杂内复势函数的解析解.然后利用保角映射技术得到了穿透圆形夹杂界面的半无限楔形裂纹尖端螺型位错产生的应力场以及作用在位错上的位错力的解析表达式.主要讨论了螺型位错对裂纹的屏蔽效应以及从楔形裂纹尖端发射位错的临界载荷条件.研究结果表明正的螺型位错可以削弱楔形裂纹尖端的应力强度因子,屏蔽裂纹的扩展,屏蔽效应随位错方位角的增大而减小.位错发射所需的无穷远临界应力随发射角的增加而增大,最可能的位错发射角度为零度,直线裂纹尖端位错的发射比楔形裂纹尖端位错的发射更容易,硬基体抑制位错的发射.     

位错偶极子和Ⅲ型界面裂纹的干涉效应

研究了多晶体材料中螺型位错偶极子和界面裂纹的弹性干涉作用.利用复变函数方法,得到了该问题复势函数的封闭形式解答.求出了由位错偶极子诱导的应力场和裂纹尖端应力强度应子,分析了偶极子的方向,偶臂和位置以及材料失配对应力强度因子的影响.推导了作用在螺型位错偶极子中心的像力和力偶矩,并讨论了界面裂纹几何条件和不同材料特征组合对位错偶极子平衡位置的影响规律.结果表明,裂纹尖端的螺型位错偶极子对应力强度因子会产生强烈的屏蔽或反屏蔽效应.同时,界面裂纹对螺型位错偶极子在材料中运动有很强的扰动作用.     

增强相/夹杂内螺位错偶极子与含共焦钝裂纹椭圆夹杂的干涉效应

运用弹性力学的复势方法,研究了纵向剪切下增强相/夹杂内螺型位错偶极了与含共焦钝裂纹椭圆夹杂的干涉效应,得到了该问题复势函数的封闭形式解答,由此推导出了夹杂区域的应力场、作用在螺型位错偶极子中心的像力和像力偶矩以及裂纹尖端应力强度因子的级数形式解.并分析了位错偶极子倾角ψ、钝裂纹尺寸和材料常数对位错像力、像力偶矩以及应力强度因子的影响.数值计算结果表明:位错像力、像力偶矩以及应力强度因子均随位错偶极子倾角做周期变化;夹杂内部的椭圆钝裂纹明显增强了硬基体对位错的排斥,减弱了软基体对位错的吸引,且对于硬夹杂,位错出现了一个不稳定平衡位置,该平衡位置随钝裂纹曲率的增大不断向界面靠近;变化ψ值将出现改变位错偶极子对应力强度因子作用方向的临界值.     

点群6mm一维六方准晶压电材料中含螺型位错的电弹性场分析

根据点群6mm一维六方准晶压电材料反平面问题的一般方程,得到其含螺型位错时应力场和电场的解析解。利用复变函数的方法,得出材料中裂纹与螺型位错在相互作用时的应力场解析表达式,所得到的解析解可以退化为已知材料的理论解。通过数值算例表明:离螺型位错越近,力场和电场值越小,反之越大。通过研究螺形位错与裂纹的相互作用为讨论一维六方准晶压电材料的裂纹顶端发射位错和裂纹钝化奠定了理论基础。     

含非完整界面涂层夹杂中螺型位错的弹性分析

研究了含非完整界面圆形涂层夹杂内部一个螺型位错在夹杂、涂层与无限大基体材料中产生的弹性场.运用复变函数函数方法,获得了三个区域复势函数的解析解答.利用求得的应力场和Peach-Koehler公式,得到了作用在螺型位错上位错力的精确表达式.主要讨论了两个非完整界面对位错力的影响规律.结果表明,涂层界面对夹杂内部螺型位错的吸引力随着界面粘结强度的弱化而变大.界面非完整程度增加削弱材料弹性失配对位错力的影响.在一定条件下,非完整界面可以改变夹杂内位错与涂层/基体系统之间的引斥干涉规律,并使位错在夹杂内部产生一个稳定或非稳定的平衡点.     

压电螺位错与含界面裂纹圆形涂层夹杂的干涉

研究位于基体或夹杂中任意点的压电螺型位错与含界面裂纹圆形涂层夹杂的电弹耦合干 涉问题. 运用复变函数方法,获得了基体,涂层和夹杂中复势函数的一般解答. 典型例 子给出了界面含有一条裂纹时,复势函数的精确级数形式解. 基于已获得的复势函数和广 义Peach-Koehler公式,计算了作用在位错上的像力. 讨论了裂纹几何条件,涂层厚度和材 料特性对位错平衡位置的影响规律. 结果表明,界面裂纹对涂层夹杂附近的位错运动有很大 的影响效应,含界面裂纹涂层夹杂对位错的捕获能力强于完整粘结情况;并发现界面裂纹长 度和涂层材料常数达到某一个临界值时可以改变像力的方向. 解答的特殊情形包含了以 往文献的几个结果.     

含界面效应纳米尺度圆环形涂层中螺型位错分析

研究了纳米尺度圆环形涂层(界面层)中螺型位错与圆形夹杂以及无限大基体材料的干涉效应.涂层与夹杂的界面和涂层与基体的界面均考虑界面应力效应.运用复势方法,获得了三个区域复势函数的解析解答.利用求得的应力场和Peach-Koehler公式,得到了作用在螺型位错上位错力的精确表达式.主要讨论了界面应力对涂层(界面层)中螺型位错运动和平衡稳定的影响规律.结果表明,界面应力对界面附近位错的运动有大的影响,由于界面应力的存在,可以改变涂层内位错与夹杂/基体干涉的引斥规律,并使位错在涂层内部产生三个稳定或非稳定的平衡点.考虑界面效应后,有一个额外的排斥力或吸引力作用在位错上,使原有的位错力增加或减小.     

螺型位错偶极子与圆形界面刚性线的干涉效应研究

本文重点研究螺型住错偶极子和圆形夹杂界面刚性线的弹性干涉效应。利用复变函数方法,得到了该问题的一般解;此外还求出了只含一条界面刚性线时的封闭解答,得到了刚性线尖端的应力强度因子以及作用在螺型位错偶板子中心的像力和像力偶矩。研究结果表明：位错偶板子对应力强度因子具有很强的屏蔽或反屏蔽效应;软夹杂吸引位错偶极子,而刚性线排斥位错偶板子,在一定条件下,位错偶极子在刚性线附近出现一个平衡位置;当刚性线的长度争材料剪切模量比达到临界值时,可以改变偶极子和界面之间的干涉机理;刚性线长度对位错偶极子中心像力偶矩也有很大的影响。     

压电螺型位错和共线界面刚性线夹杂的干涉效应

研究了压电材料中压电螺型位错和共线界面导电刚性线夹杂的电弹干涉效应.运用复变函数解析延拓技术与奇性主部分析方法,获得了该问题的一般解答.作为算例,求出了界面含一条刚性线夹杂时两种压电介质区域广义应力函数的封闭形式解.导出了作用在位错上的像力和刚性线夹杂表面剪应力和电位移的解析表达式.讨论了界面刚性线长度,两种材料的剪切模量比和压电系数比对位错力和刚性线表面剪应力的影响规律.为进一步研究该类问题提供了一个基本解.     

Shielding effect and emission condition of a screw dislocation near a blunt crack in elliptical inhomogeneity

The shielding effect and emission condition of a screw dislocation near a blunt crack in elastic elliptical inhomogeneity is dealt with. Utilizing the Muskhelishvili complex variable method, the explicit series form solutions of the complex potentials in the matrix and the inclusion regions are derived. The stress intensity factor and critical stress intensity factor for dislocation emission are also calculated. The influences of the orientation of the dislocation and morphology of the blunt crack as well as the material elastic dissimilarity upon the shielding effect and emission criterion are discussed in detail. As a result, numerical analysis and discussion show that the positive screw dislocation can reduce the stress intensity factor of the crack tip (shielding effect) only when it is located in the certain region. The shielding effect increases with the increase of the shear modulus of the matrix and the curvature radius of the blunt crack tip, but decreases with the increase of dislocation azimuth angle. The critical loads at infinity for dislocation emission increases with the increment of the emission angle and the curvature radius of the blunt crack tip, and the most probable angle for screw dislocation emission is zero. The present solutions contain previous results as the special cases.     

Exact solutions for piezoelectric screw dislocations near two asymmetrical edge cracks emanating from an elliptical hole

The interaction between piezoelectric screw dislocations and two asymmetrical interfacial cracks emanating from an elliptic hole under combined mechanical and electric load at infinity is dealt with. The closed-form solutions are derived for complex potentials and generalized stress fields. In the limiting cases, some well-known results can be obtained from the present solutions. Moreover, some new exact solutions are shown. The stress intensity factor and the energy release rate at the right tip due to a screw dislocation near the right interfacial crack are also calculated. The results show that the shielding effect of dislocation on crack expanding decreases with the increase in dislocation azimuth angle and the distance between the dislocation and the crack tip, and the repulsion acting on the dislocation from the other half plane demotes crack propagation. The increasing of the length of the other crack promotes crack growth, but the increasing of the minor semi-axis demotes it.     

Nanoscale rotational deformation effect on dislocation emission from an elliptically blunted crack tip in nanocrystalline materials

A grain size-dependent model is theoretically established to describe the effect of a special physical micromechanism of plastic flow on the dislocation emission from an elliptical blunt crack tip in nanocrystalline solids. The micromechanism represents the fast nanoscale rotational deformation (NRD) occurring through collective events of ideal nanoscale shear near crack tips, which as a stress source is approximately equivalent to a quadrupole of wedge disclinations. By the complex variable method, the grain size-dependent criterion for the dislocation emission from an elliptical blunt crack tip is derived. The influence of the grain size and the features of NRD on the critical stress intensity factors for dislocation emission is evaluated. The results indicate that NRD releases the high stresses near the crack tip region and thereby enhances the critical stress intensity factor for dislocation emission. The NRD has great influence on the most probable angle for dislocation emission. The critical stress intensity factor will increase with the increment of the grain size, which means the emission of the dislocation becomes more difficult for larger grain size due to the effect of NRD.     

A generalized screw dislocation interacting with interfacial cracks along a circular inhomogeneity in magnetoelectroelastic solids

The interaction of a generalized screw dislocation with circular arc interfacial cracks under remote antiplane shear stresses, in-plane electric and magnetic loads in transversely isotropic magnetoelectroelastic solids is dealt with. By using the complex variable method, the general solutions to the problem are presented. The closed-form expressions of complex potentials in both the inhomogeneity and the matrix are derived for a single circular-arc interfacial crack. The intensity factors of stress, electric displacement and magnetic induction are provided explicitly. The image forces acting on the dislocation are also calculated by using the generalized Peach–Koehler formula. For the case of piezoelectric matrix and piezomagnetic inclusion, the shielding and anti-shielding effect of the dislocation upon the stress intensity factors is evaluated in detail. The results indicate that if the distance between the dislocation and the crack tip remains constant, the dislocation in the interface will have a largest shielding effect which retards the crack propagation. In addition, the influence of the interfacial crack geometry and materials magnetoelectroelastic mismatch upon the image force is discussed. Numerical computations show that the perturbation effect of the above parameters upon the image force is significant. The main result shows that a stable or unstable equilibrium point may be found when a screw dislocation approaches the surface of the crack from infinity which differs from the perfect bonded case under the same conditions. The present solutions contain a number of previously known results which can be shown to be special cases.     

INTERACTION OF A DISLOCATION DIPOLE WITH A MODE III INTERFACE CRACK

Interaction between a screw dislocation dipole and a mode III interface crack is investigated. By using the complex variable method, the closed form solutions for complex potentials are obtained when a screw dislocation dipole lies inside a medium. The stress fields and the stress intensity factors at the tip of the interface crack produced by the screw dislocation dipole are given. The influence of the orientation, the dipole arm and the location of the screw dislocation dipole as well as the material mismatch on the stress intensity factors is discussed. The image force and the image torque acting on the screw dislocation dipole center are also calculated. The mechanical equilibrium position of the screw dislocation dipole is examined for various material property combinations and crack geometries. The results indicate that the shielding or anti-shielding effect on the stress intensity factor increases abruptly when the dislocation dipole approaches the tip of the crack. Additionally, the disturbation of the interface crack on the motion of the dislocation dipole is also significant.     

INTERACTION OF A DISLOCATION DIPOLE WITH A MODE Ⅲ INTERFACE CRACK

Interaction between a screw dislocation dipole and a mode Ⅲ interface crack is investigated. By using the complex variable method, the closed form solutions for complex potentials are obtained when a screw dislocation dipole lies inside a medium. The stress fields and the stress intensity factors at the tip of the interface crack produced by the screw dislocation dipole are given. The influence of the orientation, the dipole arm and the location of the screw dislocation dipole as well as the material mismatch on the stress intensity factors is discussed. zThe image force and the image torque acting on the screw dislocation dipole center are also calculated. The mechanical equilibrium position of the screw dislocation dipole is examined for various material property combinations and crack geometries. The results indicate that the shielding or anti-shielding effect on the stress intensity factor increases abruptly when the dislocation dipole approaches the tip of the crack. Additionally, the disturbation of the interface crack on the motion of the dislocation dipole is also significant.     

Interaction of a screw dislocation with an interfacial edge crack in a two-phase piezoelectric material

The interaction of a screw dislocation with an interfacial edge crack in a two-phase piezoelectric medium is investigated. Closed-form solutions of the elastic and electrical fields induced by the screw dislocation are derived using the conformal mapping method in conjunction with the image principle. Based on the electroelastic fields derived, the stress and electric displacement intensity factors, the image force acting on the dislocation are given explicitly. We find that the stress and electric displacement intensity factors depend on the effective electroelastic material constants. In the case where one of two phases is purely elastic, the stress intensity factor and image force are plotted to illustrate the influences of electromechanical coupling effect, the position of the dislocation and the material properties on the interaction mechanism. The project supported by the Doctoral Foundation of Hebei Province (B2003113)