极紫外(EUV)光刻胶树脂及合成方法进展

极紫外光刻(EUVL)是实现22 nm及以下节点集成电路制造最为高效的工艺技术。本文介绍了EUV光刻胶树脂的结构特点及其对光刻性能的影响,并着重整理了近年来化学增幅型和非化学增幅型EUV光刻胶树脂的合成方法。最后,对EUV光刻胶树脂的结构设计进行了分析与展望。     

多光子光刻用的杯[4]芳烃分子玻璃正性光刻胶

分子玻璃材料和多光子光刻技术分别是近年来光刻胶和光刻技术领域的研究热点.本文对分子玻璃正性光刻胶在多光子光刻中的应用进行了探索,设计合成了叔丁氧基羰基保护的杯[4]芳烃衍生物分子玻璃材料,将其作为主体材料与光生酸剂三氟甲磺酸三苯锍鎓盐进行复配,制备了分子玻璃正性光刻胶,探讨并优化了光刻胶的成分配比及其在紫外光曝光下的显影工艺.利用780nm波长飞秒激光对所制备的分子玻璃正性光刻胶进行了多光子光刻特性的评价,实验得到了最低线宽180nm的线条和复杂的二维微结构图形,结果表明杯[4]芳烃衍生物分子玻璃正性光刻胶有望应用于多光子光刻技术.     

光刻与光刻胶的研究与发展

本文介绍用于超大规模集成电路的光刻技术及其光刻胶,包括化学增值型光刻胶和无显影气相光刻胶等的研究进展和发展趋势.     

用于浸没式工艺的光刻胶研究进展

浸没式光刻技术是在原干法光刻的基础上采用高折射率浸没液体取代原来空气的空间,从而提高光刻分辨率的一种先进技术.此项技术的实际应用,为当前IC产业的飞速发展起到了关键的作用.本文概述了浸没式光刻技术的发展历程和浸没式光刻胶遇到的挑战及要求;对浸没式光刻胶主体树脂、光致产酸剂及添加剂的研究进展进行了综述;最后对浸没式光刻胶的研究发展方向作了进一步的探讨及初步预测.     

光刻胶用底部抗反射涂层研究进展

随着微电子工业的蓬勃发展,光刻技术向着更高分辨率的方向迈进,运用底部抗反射涂层有效消除光刻技术中的驻波效应、凹缺效应,提高关键尺寸均一性和图案分辨率,引起了广大研究者的关注。本文简要介绍了光刻胶和光刻技术,底部抗反射涂层的分类、基本原理、刻蚀工艺以及其发展状况。重点对底部抗反射涂层的最新研究进展进行了总结,尤其是碱溶型底部抗反射涂层在光刻胶中的应用研究,最后对底部抗反射涂层的发展前景和方向进行了展望。     

先进光刻材料

随着半导体产业的技术发展与进步,芯片制造在摩尔定律的推动下也在不断向先进工艺节点推进。与此同时,我们迫切需要开发与之相匹配的光刻材料来满足光刻图形化的快速发展需求。本文从光刻材料的成分和性能出发,介绍了光刻图形化技术所用的从紫外光刻胶、深紫外光刻胶、极紫外光胶、共轭聚合物光刻材料到导向自组装光刻材料,分析了光刻材料的发展现状,最后总结全文并对国内光刻材料的未来发展趋势进行展望。     

一种新型紫外正型光刻胶成膜树脂的制备及光刻性能研究

本文合成了N-(p-羧基苯基)甲基丙烯酰胺单体,并将其与N-苯基马来酰亚胺共聚得到共聚物聚N-(p-羧基苯基)甲基丙烯酰胺共N-苯基马来酰亚胺(poly(NCMA-co-NPMI)).将此共聚物作为成膜树脂,与感光剂、溶剂等复配得到一种新型耐高温紫外正型光刻胶.本文探讨了该光刻胶的最佳配方组成和最佳光刻工艺.最佳配方组成为:15%—20%成膜树脂,4.5%—6%感光剂和70%—80%溶剂;最佳光刻工艺为:匀胶30 s(4000 rpm),前烘4 min(90℃),感度为30—35mJ/cm²,在0.2%TMAH溶液显影10 s和后烘2 min(90℃).     

基于斜光刻技术的SU-8胶三维微阵列结构制备

利用斜光刻技术替代传统的直光刻技术在相同底面积的基础上增大微阵列比表面积制备了高比表面积三维微阵列结构,.首先,利用MATLAB仿真对微阵列排布方式进行分析,确定最佳单个柱体宽度及阵列间距.实验中,采用两次甩胶法将SU-8光刻胶均匀旋涂在2寸硅基底上,甩胶转速设为1500r/min,旋涂时间设为35 s;分别置于65℃烘台上保持20 min和95℃烘台上保持70 min进行两次前烘处理;随后进行双向斜曝光,微柱宽度为20 μm,阵列间距为30 μm,光刻角度为20°.最后,再通过高低温后烘处理并显影30 min成功制备出了结构稳定的“Ⅹ”型三维微阵列结构.     

光刻技术:发展路径及未来趋势

光刻技术在半导体器件大规模生产中发挥重要作用.今天,多数先进半导体生产都已经应用ArF准分子激光浸润光刻技术.双重图像曝光和侧壁图像转移技术使ArF准分子激光浸润光刻技术延伸到32纳米半节距(HP)器件的制造成为可能.为了制造更小尺寸的器件,必须开发新的制造工艺.极端紫外线光刻是制造22纳米半节距甚至更小尺寸半导体器件的先进下一代光刻技术解决方案.另外,其他技术解决方案,如纳米压印光刻技术和无掩模直描光刻技术等也被考虑用于制造更小节点尺寸的器件,但是目前这些方案仅仅处在研发阶段,而且在现阶段就已经呈现出在大规模生产中的诸多困难.本文从材料的角度对光刻技术进行一个整体描述,并对光刻技术未来趋势进行讨论.     

I-Line光刻胶材料的研究进展

酚醛树脂-重氮萘醌正型光刻胶由于其优异的光刻性能,在g-line(436 nm)、i-line(365 nm)光刻中被广泛使用.g-line光刻胶胶、i-line光刻胶,两者虽然都是用线型酚醛树脂做成膜树脂,重氮萘醌型酯化物作感光剂,但当曝光波长从g-line发展到i-line时,为适应对应的曝光波长以及对高分辨率的追求,酚醛树脂及感光剂的微观结构均有变化.在i-line光刻胶中,酚醛树脂的邻-邻'相连程度高,感光剂酯化度高,重氮萘醌基团间的间距远.溶解促进剂是i-line光刻胶的一个重要组分,本文对其也进行了介绍.     

248nm深紫外光刻胶

本文从化学增幅技术的产生,深紫外248nm胶主体树脂及PAG发展历程、溶解抑制剂、存在的工艺问题及解决途径多个方面综述了深紫外248nm胶的发展与进步.     

用于光致抗蚀剂的聚对羟基苯乙烯的合成及其进展

随着集成电路芯片的发展,生产物理和化学性质均一的高分子光阻剂得到了各信息产业国的重视.到目前为止,含对羟基苯乙烯基的高分子光阻剂已成为光刻蚀0.11μm线宽芯片的关键技术.本文综述了目前合成窄分布的含对羟基苯乙烯基的高分子光阻剂的各种方法,在此基础上比较了各种合成方法的优缺点,为合成窄分布的含对羟基苯乙烯基的高分子光阻剂提供了必要的指导.     

Pyrromethene dye sensitized photopolymer—photochemical behavior in polymer matrix and application to photoresist for printed circuit board

The photochemical behavior of the visible light initiating system that consists of a sensitizing dye, 2,6‐diethyl‐8‐phenyl‐1,3,5,7‐tetramethylpyrromethene BF₂ complex (EPP), and a photoacid generator, N‐trifluoromethylsulfonyloxy‐1,8‐naphthalimide (NIOTf), was studied mainly by means of absorption and fluorescence spectrometry not in solution but in a polymer matrix which is a closer medium to the one currently employed in the field of photoresists. Excited singlet electron transfer from EPP to NIOTf was considered as the main reaction pathway in this system. The EPP/NIOTf system was applied to a photoresist for printed circuit board with an appropriate binder polymer which contains an acetal protection group. A pattern profile of the photoresist was exceedingly affected by the amount of photogenerated acids, their diffusion, and amine in the atmosphere. Finally, by controlling exposure energy and the post‐exposure bake (PEB) process, a photoresist with a high resolution (8 µm line and space) was obtained under argon ion laser irradiation. Copyright © 2006 John Wiley & Sons, Ltd.     

Deep UV photoresists based on poly(dl-tert-butyl fumarate)

Poly(di-tert-butyl fumarate) was prepared and evaluated as a potential candidate as a deep UV photoresist. Although this polymer displayed excellent sensitivity, the polymer was found to exhibit poor dry etch resistance. Copolymers of di-tert-butyl fumarate with either allyltrimethylsilane or styrene, and an onium salt as a photoacid generator were synthesized and subsequently evaluated using a 248-nm KrF excimer laser step-and-repeat system (stepper). At 248 nm, the absorbance of ～ 1 μm thick resist films was only 0.156-0.211. The sensitivities of these resists were 1-4 mJ/cm². The dry etch resistance of these photoresists was comparable to that of conventional positive photoresists based on novolac resins. © 1995 John Wiley & Sons, Inc.     

Polymers in conventional and alternative lithography for the fabrication of nanostructures

This review provides a survey of lithography techniques and the resist materials employed with these techniques. The first part focuses on the conventional lithography methods used to fabricate complex micro- and nano-structured surfaces. In the second part, emphasis is placed on patterning with unconventional lithography techniques such as printing, molding, and embossing, and on their development into viable, high-resolution patterning technologies.     

Aqueous developable dual switching photoresists for nanolithography

Photon‐mediated switching of polymer solubility plays a crucial role in the manufacture of integrated circuits by photolithography. Conventional photoresists typically rely on a single switching mechanism based on either a change in polarity or, molecular weight of the polymer. Here we report a photoresist platform that uses both mechanisms. The molecular weight switch was achieved by using a poly(olefin sulfone) designed to undergo photo‐induced chain scission. The polarity switch was achieved using pendant groups functionalized with o‐nitrobenzyl esters. These are hydrophobic photosensitive‐protecting groups for hydrophilic carboxylic acids. On irradiation, they are cleaved, making the polymer soluble in aqueous base. Importantly, the resists do not contain photoacid generator, so do not suffer from problems associated with acid diffusion that are detrimental to pattern fidelity. The 193 nm photochemistry of polymer thin films was followed using grazing angle attenuated total reflectance Fourier transform infrared spectroscopy, variable angle spectroscopic ellipsometry, and measurements of solubility in aqueous base. The nanoscale patterning performance of the polymers was also assessed using 193 nm interference lithography and electron‐beam lithography. The implications of using dual switching mechanisms are discussed. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

二氧化碳基聚碳酸环己撑酯电子束光刻胶显影工艺优化

电子束光刻是下一代光刻技术中的有力竞争者,在微纳加工尤其是光刻掩膜制造上具有显著的竞争优势。 开发高性能的光刻胶并优化出最佳的显影条件和工艺是提升电子束光刻效率的基础。 本文在前期开发出的二氧化碳基聚碳酸酯电子束光刻胶的基础上,进一步探究了正性聚碳酸环己撑酯(PCHC)胶的显影条件对电子束光刻性能的影响,具体研究了显影剂以及显影温度和时间等工艺条件,筛选出了最优显影剂正己烷,最佳显影温度0 ℃,最佳显影时间30 s。 在该条件下,PCHC的灵敏度和对比度分别为208 μC/cm²和3.06,并实现了53 nm的分辨率,超过了当下广泛使用的PMMA-950k电子束光刻胶,有望为科研院所和半导体加工车间提供一种性能优异、成本低廉的新型电子束光刻胶。