Temperature dependence of luminescence time-resolved spectra from quartz

Pulsed optical stimulation of luminescence has been used to study the thermal dependence of luminescence lifetimes in quartz over the temperature range 20–200°C. Time-resolved spectra for lifetime analysis were recorded from samples of quartz over a dynamic range of 64 μs following stimulation of luminescence by pulsed 525 nm green light emitting diodes (LEDs) using an 11 μs pulse and 12% duty cycle. It has been demonstrated that an increase in measurement temperature generally leads to a decrease in lifetimes from about 30 μs at 20°C to about 7 μs at 200°C. The form of the decrease is influenced by the initial optical or thermal pre-treatment of samples.     

Time-resolved luminescence from annealed synthetic quartz under 525 nm pulsed green light stimulation

The influence of annealing on lifetimes has been studied in synthetic quartz annealed at temperatures up to 800°C using time-resolved optical stimulation in the range 20–200°C. Luminescence was stimulated using pulsed 525 nm light-emitting-diodes. There is an increase with annealing temperature in the lifetime measured at 20°C for samples annealed beyond 500°C. Further, lifetimes decrease with measurement temperature in a manner consistent with the thermal quenching of luminescence.     

On luminescence lifetimes in quartz

In this paper we present results of investigations concerning the time dependence of luminescence emission relative to the time of stimulation in quartz. Measurements of time-resolved spectra were performed on a new versatile pulsed light emitting diode system using 525 nm stimulation, an 11 μs duration pulse, a repetition rate of 11 kHz and a 64 μs dynamic range. Effects on luminescence lifetime resulting from sample treatments such as optical stimulation, irradiation, and preheating, are reported.     

The ‘110°C’ TL peak in synthetic quartz

The thermoluminescence (TL) of synthetic quartz has been investigated in the temperature region 275–475 K. These measurements have revealed a more complicated structure of the 110°C TL peak and thermal activation energies and frequency factors have been estimated for a number of peaks within the glow curve. The results obtained after annealing samples in different atmospheres indicate that oxygen-related defects play an important role in the luminescence process, involving both the charge traps and recombination centres.     

Optical characterization of InGaN/AlGaN/GaN diode grown on silicon carbide

Electroluminescence (EL) properties of In_xGa_1−xN/Al_yGa_1−yN/GaN/SiC diode were studied. The spectral range for which EL spectra were recorded is 1–3.5 eV. Room temperature EL was obtained for forward bias (3.18 V, 220 μA) at 446.067 nm (blue luminescence band), 606.98 nm (yellow luminescence band) and 893.84 nm (Infrared luminescence band). The EL temperature dependence shows that, BL band is mostly given by e–h recombination corresponding to indium composition equal to 0.17 ± 0.01 and 0.14 ± 0.02 obtained theoretically and experimentally, respectively. The yellow band is generally weak and absent at low temperature. The IRL band is more consistent with the DAP recombination and could be explained by the thermal activation of Mg states. The luminescence bands shift to lower energies is due probably to the larger potential fluctuations effect.     

Davydov splitting and two-photon excitation of cadmium tungstate (CdWO4) single crystal phosphorescence

Phosphorescence characteristics of CdWO₄ excited by one-photon (λ = 308 nm) and two-photon (λ = 570–590 nm) processes were measured. A Davydov splitting of 120 ± 20 cm⁻¹ was obtained in the phosphorescence spectra, suggesting a diffusion coefficient of about 1.2 × 10⁻² cm² s⁻¹, and a diffusion length of about 3.1 × 10⁻⁴ cm for the room temperature measured lifetime of 8μs. The phosphorescence quantum efficiency was less than 2% at low temperatures (only 0.25% at room temperature), indicating that the dominant decay mechanism was radiationless. The radiative lifetime was thus estimated as 1–2 ms. The two-photon phosphorescence excitation is characterized by an absorption cross-section of the order of 10⁻⁴⁹cm⁴s.     

Luminescence lifetimes in quartz: dependence on annealing temperature prior to beta irradiation

It is well known that the thermal history of a quartz sample influences the optically stimulated luminescence sensitivity of the quartz. It is found that the optically stimulated luminescence lifetime, determined from time resolved spectra obtained with pulsed stimulation, also depends on past thermal treatment. For samples at 20°C during stimulation, the lifetime depends on beta dose and on duration of preheating at 220°C prior to stimulation for quartz annealed at 600°C and above, but is independent of these factors for quartz annealed at 500°C and below. For stimulation at higher temperatures, the lifetime becomes shorter if the sample is held at temperatures above 125°C during stimulation, in a manner consistent with thermal quenching. A single exponential decay is all that is required to fit the time resolved spectra for un-annealed quartz regardless of the temperature during stimulation (20–175°C), or to fit the time resolved spectra from all samples held at 20°C during stimulation, regardless of annealing temperature (20–1000°C). An additional shorter lifetime is found for some combinations of annealing temperature and temperature during stimulation. The results are discussed in terms of a model previously used to explain thermal sensitisation. The luminescence lifetime data are best explained by the presence of two principal luminescence centres, their relative importance depending on the annealing temperature, with a third centre involved for limited combinations of annealing temperature and temperature during stimulation.     

Some properties of luminescence lifetimes from quartz stimulated by blue light

Abstract

Measurements have been made of recombination lifetimes as a function of stimulation time in quartz, a natural dosimeter. Time-resolved luminescence techniques were used to study the influence on lifetimes of sustained 470nm optical stimulation of luminescence and modifications associated with beta irradiation of samples. Results are reported for samples differing in sensitivity to luminescence stimulation.     

Optically stimulated luminescence (OSL) study of synthetic stishovite

Optically stimulated luminescence (OSL) of synthetic stishovite was investigated for a future dating technique of meteor impact craters. Luminescence around 330 nm was measured on the γ-ray irradiated stishovite under two stimulating light sources of infrared laser (830 nm) and blue light emitting diode set (470 nm). Thermoluminescence (TL) studies before and after the OSL measurements showed the intensities around 100–200°C and 220–350°C to increase and those around 350–450°C to decrease. This indicates that a part of deep-trapped charges excited during the OSL measurements were retrapped by shallower traps. The infrared stimulated luminescence (IRSL) after the TL measurement up to 450°C could not be detected, while the blue light stimulated luminescence (BLSL) after TL had about one-tenth of the intensity before TL. This indicates that a part of the charges in shallower traps were detrapped thermally and returned to the deeper traps which were related to BLSL. The result implies that some of the BLSL-related traps are quite stable at room temperature and could be used for geological dating. In addition, two paramagnetic centers produced by sudden release of high pressure in synthesis process were found in the unirradiated stishovite by electron spin resonance (ESR). Their g-factors are g=2.00181 and g=2.00062 for an axial signal and g=2.00305 for the other isotropic signal. These signals could be used for an evidence of impacts if those signals could be stored in geological time.     

Modelling the thermal quenching mechanism in quartz based on time-resolved optically stimulated luminescence

This paper presents a new numerical model for thermal quenching in quartz, based on the previously suggested Mott-Seitz mechanism. In the model electrons from a dosimetric trap are raised by optical or thermal stimulation into the conduction band, followed by an electronic transition from the conduction band into an excited state of the recombination center. Subsequently electrons in this excited state undergo either a direct radiative transition into a recombination center, or a competing thermally assisted non-radiative process into the ground state of the recombination center. As the temperature of the sample is increased, more electrons are removed from the excited state via the non-radiative pathway. This reduction in the number of available electrons leads to both a decrease of the intensity of the luminescence signal and to a simultaneous decrease of the luminescence lifetime. Several simulations are carried out of time-resolved optically stimulated luminescence (TR-OSL) experiments, in which the temperature dependence of luminescence lifetimes in quartz is studied as a function of the stimulation temperature. Good quantitative agreement is found between the simulation results and new experimental data obtained using a single-aliquot procedure on a sedimentary quartz sample.     

Concerning infrared-stimulated luminescence from K-feldspars: evidence from heating before stimulating

Repeated heating and stimulation by infrared of feldspar samples causes a reduction in the luminescence signal. Two feldspars were investigated, one microcline and one orthoclase. Empirically the fraction of luminescence signal f(n) remaining after the nth cycle of heating and stimulation is given by f(n)=1−a ln(n) for laboratory dosed samples of both microcline and orthoclase feldspars, for heating temperatures of 150°C, 180°C and 220°C, for heating durations per cycle ranging from 20 s to 2400 s and with the study covering 10 cycles of heating and stimulation. Logarithmic decay of luminescence with time has been explained previously, in other contexts, as due either to quantum tunnelling or to a continuous distribution of states being involved but it is shown that these explanations do not fit the present data. The measured data on f(n) were corrected for the loss of luminescence due to infrared stimulation to ensure that this did not account for the differences between the data and the expectations from models; the functional form f(n)=1−a ln(n) remains valid, although with changed values of a. Numerical simulations of systems involving a limited number of trap depths, from 21 down to 3, were investigated and those with 5 or more trap depths were found to be capable of resembling the data. The simulations could not define a unique pattern of trap depths to match the data, but of the patterns investigated the data were best reproduced by a distribution of at least 5 traps in the energy range from 1.18–1.66 eV. These conclusions augment, and are consistent with, existing information on luminescence mechanisms in potassium-feldspars.     

Limits to depletion of blue-green light stimulated luminescence in feldspars: implications for quartz dating

Feldspar contaminants in quartz aliquots, either as micro-inclusions or as remnant grains (due to inadequate etching) can affect the accuracy and precision of paleodose estimates based on blue-green light stimulated luminescence (BGSL). Such contamination could also alter the shape of the BGSL stimulation curve of otherwise pure quartz. In this study, the functional relationship between the infra-red stimulated luminescence (IRSL) and BGSL of feldspars, (1) at different preheats, and (2) with IR bleaching at different stimulation temperatures and durations, is examined. The results suggest two trap populations participate in the feldspar BGSL process. These are: (1) Type (A) trap populations that can be stimulated by both the infra-red and the blue-green light at 125°C and, (2) Type (B) trap populations that respond only to blue-green-light stimulation at 125°C. However, infra-red stimulation at elevated temperature (220°C) (ETIR) permits depletions of charges in Type (A) and Type (B) to the extent that the feldspar BGSL can be reduced by up to 97% in 5 min.

These results offer prospects for (1) improved precision in paleodose estimates based on quartz; (2) BGSL dating of quartz in a polyminerallic fine grain samples; (3) age estimates based on both quartz and feldspars from the same aliquots, and (4) dating based on feldspar micro-inclusions.     

Luminescence sensitivity changes in quartz as a result of annealing

Retrospective dosimetry using optically stimulated luminescence (OSL) on quartz extracted from (for example) bricks needs to account for strong OSL sensitivity changes that are known to occur depending on the previous thermal treatment of the sample. Non-heated quartz exhibits OSL orders of magnitude less per unit radiation than that for heated material. The reason these temperature-induced sensitivity changes occur in quartz is presently not well understood. This phenomenon is also seen in the related area of luminescence dating in which sedimentary quartz and quartz from heated archaeological samples show very different OSL sensitivities. In this paper we report on studies of the effects of high temperature annealing on the OSL and phototransferred TL (PTTL) signals from sedimentary and synthetic quartz. A dramatic enhancement of both OSL and PTTL sensitivity was found especially in the temperature range 500–800°C. Computer simulations of the possible effects are shown to produce data that agree in all essential details with the experimental observations. It is further demonstrated that the enhanced OSL sensitivity as a function of annealing temperature is not a pre-dose effect.     

Absorbed dose evaluations in retrospective dosimetry: methodological developments using quartz

Dose evaluation procedures based on luminescence techniques were applied to 50 quartz samples extracted from bricks that had been obtained from populated or partly populated settlements in Russia and Ukraine downwind of the Chernobyl NPP. Determinations of accrued dose in the range 30–300 mGy were obtained using TL (210°C TL and pre-dose) and OSL (single and multiple aliquot) procedures. Overall, good inter-laboratory concordance of dose evaluations was achieved, with a variance (1σ) of ±10 mGy for the samples examined.     

Luminescence spectra of alkalifeldspars and plagioclases

Feldspars are widely used as dosimeters in dating archaeological and geological materials by thermally or optically stimulated luminescence (TL, OSL). The TL, (IR)OSL and phosphorescence (following gamma irradiation) spectra of 26 samples covering the orthoclase-albite-anorthite ternary system, which were characterized by microscopy and X-ray diffraction analysis, were measured using the Freiberg high sensitive luminescence spectrometer. The range of observation for TL (up to 350°C) and phosphorescence was (200–800) nm. IR (880 nm) stimulated luminescence light has been detected between 330 nm and 660 nm. Representative examples of our systematic investigations on the luminescence behaviour of alkalifeldspars and plagioclases are presented.     

The temperature dependence of the short wavelength transmittance limit of vacuum ultraviolet window materials—I. Experiment

The short wavelength transmittance limit or cut-off wavelength, λ_co, of LiF, MgF₂, CaF₂, LaF₃, BaF₂, sapphire, synthetic crystal quartz and fused quartz has been measured from about 100°C to about 10°K. λ_co is not a well denned quantity, so for the purpose of this experiment it has been arbitrarily taken as the wavelength where transmittance could just be measured, usually 0.1-0.5 per cent. With one exception λ_co shifted to shorter wavelengths as the sample was cooled; the shift varied from about 40 to 80 Å over the temperature range from 100°C to 10°K, depending on the material, with the largest shift occurring in BaF₂;. The exception was LaF₃ which showed no measurable change in λ_co wth temperature. Over the temperature range from 20° to 100°C the slope of λ_co, with temperature for all materials was fairly constant, but below 20°C it decreased, approaching zero as the temperature approached 20°-10°K. In the case of synthetic crystal quartz, for example, the slope changed from about 0.28 Å/°K at room temperature to about 0.055 Å/°K at 80°K.     

Red luminescence from potassium feldspar for dating applications: a study of some properties relevant for dating

Aspects of the red thermoluminescence (RTL) and IR (833±5 nm) stimulated red (λ_emission=600–750 nm) luminescence (orange-red IRSL) of potassium feldspar from different origins are described. Anomalous fading of RTL (300–500°C) from a selection of potassium feldspar samples was tested. High temperature RTL (300–450°C) exhibits less anomalous fading in comparison to UV luminescence, for the samples under study. The result supports the contention of Zink and Visocekas (1997) that the red TL emission from feldspar does not fade. It was found that RTL is bleachable due to IR exposure, and the relationship between RTL lost and orange-red IRSL produced is linear. It is shown that around one third of the trapped charge responsible for the orange-red IRSL signal gives rise to an RTL signal, indicating that some traps and luminescence centres are shared for RTL and orange-red IRSL.

Specific characteristics of orange-red IRSL from feldspar were identified. It was found that the orange-red IRSL decay curve is bleachable by IR and daylight and can be described by the sum of three exponential components. Orange-red IRSL fading was tested. Short-term storage tests (up to 2 weeks) showed no fading. Longer-term (ca. months) storage of orange-red IRSL do in fact indicate fading, though at levels considerably lower than for the UV emission. The contradictory result is possibly due to the detection wavelength. As such, it is highly likely that the long-term fading experiment is strongly influenced by the feldspar emission centred at ca. 570 nm, which exhibits anomalous fading, while the short-term fading experiment is more greatly influenced by the far red emission centred at ca. 710 nm that in comparison to UV emission shows no or less fading.     

Erbium-doped silicon epilayers grown by liquid-phase epitaxy

Liquid-phase epitaxy from an Si–In–Er solution at an average temperature of 950°C has been used to grow 2–4 μm thick epilayers of erbium-doped silicon onto CZ and FZ silicon substrates in an oxygen-free hydrogen atmosphere. Most of the samples grown on CZ substrates presented detectable, but feeble photoluminescence at 2 K in the spectral range of emission of the Er³⁺ manifold at 0.8 eV. However, some of the samples presented intense photoluminescence, characterized by two bands at 0.807 (at 10 K) and 0.873 eV, of which the first falls almost at the same energy of the Er³⁺ line, but whose intensity presents a quite remarkable persistence up to 250 K. From the energy position of the two bands, from their temperature dependence and from the levels found by deep level transient spectroscopy measurements, associated to TEM examinations, it was possible to attribute these bands, labelled D1 and D2, to dislocation luminescence. It will be shown in this paper that the presence of erbium enhances the D1 luminescence, possibly due to the fact that in these samples erbium is gettered at dislocations in an Er–O local configuration, as it results from EXAFS measurements. Apparently, also, a competition occurs with the Er-induced radiative recombination at dislocations, which is a fast process, and the indirect excitation of the Er manifold, which is the predominant process in dislocation-free materials.     

The influence of optical bleaching on lifetimes and luminescence intensity in the slow component of optically stimulated luminescence of natural quartz from Nigeria

The intensity of optically stimulated luminescence may be decreased to a slow or medium component of its decay curve by optical bleaching, that is, by prolonged exposure of the luminescent sample to stimulating light. In this paper, we report on the influence of irradiation and measurement temperature on luminescence lifetimes as well as on the effect of measurement temperature on luminescence intensity in annealed natural quartz from Nigeria. Measurements were carried out in the slow component region using time-resolved optical stimulation at 470 nm on samples annealed at 500 and 600 °C. Luminescence lifetimes were determined from the resultant time-resolved luminescence spectra by analysing the portion of each spectrum after the stimulating light pulse of duration 11 μs. In preparatory tests, the influence of the duration of optical bleaching on lifetimes was investigated. It was found that lifetimes in samples annealed at 500 °C are independent of the duration of optical bleaching, whereas lifetimes in quartz annealed at 600 °C are affected, decreasing towards a constant value with duration of bleaching. Concerning measurements in the slow-component region, lifetimes were found to decrease with irradiation dose for samples annealed at either 500 or 600 °C. The temperature dependence of lifetimes in both sets of quartz is similar with lifetimes constant at about 36 μs between 20 and 120 °C, but decreasing consistently from then on to about 5 μs at 200 °C, the maximum measurement temperature used in experiments. The luminescence intensity was observed to typically go through a peak as the stimulation temperature was increased from 20 to 200 °C, following a brief initial decrease, a change better exemplified in the quartz annealed at 600 °C. The initial decrease in luminescence intensity is attributed to the dominance of optical stimulation over thermal stimulation. On the other hand, the subsequent change of luminescence intensity with temperature is discussed as evidence of thermal assistance to optical stimulation, initially with activation energy of 0.27±0.07 eV and of thermal quenching subsequently with activation energy equal to 0.93±0.23 eV for samples annealed at either 500 or 600 °C. The temperature dependence of lifetimes is explained as showing increased thermal effect on lifetimes with activation energy values within 0.83±0.01 eV. On the other hand, the influence of irradiation on lifetimes is accounted for in terms of an energy band model for quartz consisting of three luminescence centres and one non-radiative recombination centre.     

Diode-end-pumped solid-state ultraviolet laser based on intracavity third-harmonic generation of 1.06 μm in YCa4O(BO3)3 crystal

Intracavity type-I sum-frequency mixing of 1.06 μm and 532 nm with a (θ,)=(106°,77.2°)-cut YCOB crystal was performed in a compact laser-diode-pumped solid-state laser. Three type-II phase-matching KTP crystals with different length were used to generate 532 nm light by frequency-doubling of 1.06 μm. The 355 nm output power was measured with the three KTP crystals for Q-switched and continuous-wave (CW) operation, respectively. The maximum ultraviolet output power of 1305 μW was obtained with a 15 mm KTP crystal for CW operation, while the maximum ultraviolet average output power of 124 mW was obtained with a 10 mm KTP crystal for Q-switched operation.