Features of the electrical and photoelectrical properties of nanocrystalline indium and zinc oxide films

Electrical and photoelectrical properties of nanocrystalline zinc oxide and indium oxide films are studied. For these oxides the temperature dependences of conductance are observed to be consisting of two parts with different activation energy. Also photoconductivity relaxation of the oxides can be described by a sum of two exponential functions. The spectral dependencies of nanocrystalline zinc oxide and indium oxide photoconductivity are presented. The photoconductivity arises as samples are illuminated with energy less than band gap. The data are discussed on the basis of model by which the localized states in the band gap play major role.     

Structural, optical and electrical properties of cadmium zinc oxide films for light emitting devices

Structural, optical and electrical properties of Cd_yZn_1-yO (y=0–0.1) ternary alloy thin films have been investigated for the films prepared using the spin coating method on the glass substrate. XRD pattern confirmed the nano-size polycrystalline hexagonal wurtzite structure for all the samples. The size of nano-crystals was found to be varied in between 21 and 30 nm. Optical band gap calculated from the absorption coefficient signifies the shift in direct band gap from 3.2 to 2.97 eV with cadmium composition. Through EDAX spectrum, it was confirmed that Cadmium was successfully incorporated into ZnO. SEM studies make clear that even after Cadmium incorporation, the surface morphology of the films remained smooth. The current–voltage characteristics obtained from semiconductor characterization system reveals that resistance of the films was found to be decreased with the increase in cadmium composition. Our investigations lead to the applicability of CdZnO as an active layer in CdZnO/ZnO heterostructure for light emitting devices.     

Raman spectroscopy and field-emission properties of CVD-grown carbon-nanotube films

Carbon-nanotube films are very efficient cathodes for field-emission devices. This study presents a comprehensive comparison between structural, spectroscopic and field-emission properties of films of aligned and non-aligned multi-wall nanotubes (MWNTs) which are grown by thermal chemical vapour deposition. Three types of films are investigated: vertically aligned MWNTs with clean and coated nanotube side walls as well as non-aligned MWNT films. Raman spectra taken on the aligned MWNT films consist of many lines of first-, second- and third-order signals. Several lines are reported here for the first time for MWNTs. The presence of the surface coating leads to a decrease and broadening of the higher-order signals as well as an increase in the disorder-induced contributions in the first-order regime. The aligned MWNT films have excellent field-emission properties with very high emission current densities and low turn-on and threshold fields. The presence of a surface coating has no impact on the efficiency of the field-emission process. Films of non-aligned MWNTs show considerably reduced electron-emission current densities and larger critical fields. Received: 25 April 2001 / Accepted: 30 May 2001 / Published online: 25 July 2001     

Optical properties of zinc peroxide and zinc oxide multilayer nanohybrid films

Zinc peroxide and zinc oxide nanoparticles were prepared and self-assembled hybrid nanolayers were built up using layer-by-layer (LbL) technique on the surface of glass substrate using the layer silicate hectorite and an anionic polyelectrolyte, sodium polystyrene sulfonate (PSS). Light absorption, interference and morphological properties of the hybrid films were studied to determine their thickness and refractive index. The influence of layer silicates and polymers on the self-organizing properties of ZnO₂ and ZnO nanoparticles was examined. X-ray diffraction revealed that ZnO₂ powders decomposed to ZnO (zincite phase) at relatively low temperatures (less than 200 °C). The optical thickness of the films ranged from 190 to 750 nm and increased linearly with the number of layers. Band gap energies of the ZnO₂/hectorite films were independent from the layer thickness and were larger than that of pure ZnO₂ nanodispersion. Decomposition of ZnO₂ to ZnO and O₂ at 400 °C resulted in the decrease of the band gap energy from 3.75 to 3.3 eV. Concomitantly, the refractive index increased in correlation with the formation of the zincite ZnO phase. In contrast, the band gap energies of the ZnO₂/PSS hybrid films decreased with the thickness of the nanohybrid layers. We ascribe this phenomenon to the steric stabilization of primary ZnO₂ particles present in the confined space between adjacent layers of hectorite sheets.     

Structural and electrical properties of fluorine-doped zinc tin oxide thin films prepared by radio-frequency magnetron sputtering

Transparent and conductive thin films of fluorine doped zinc tin oxide (FZTO) were deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO₂ ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF₄, and O₂ forming gas into the sputtering chamber while sputtering ZTO target. The effect of annealing temperature on the structural, electrical and optical performances of FZTO thin films has been studied. FZTO thin film annealed at 600 °C shows the decrease in resistivity 5.47 × 10⁻³ Ω cm, carrier concentration ∼10¹⁹ cm⁻³, mobility ∼20 cm² V⁻¹ s⁻¹ and an increase in optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures which is well explained by Burstein–Moss effect. The optical transmittance of FZTO films was higher than 80% in all specimens. Work function (ϕ) of the FZTO films increase from 3.80 eV to 4.10 eV through annealing and are largely dependent on the amounts of incorporated F. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.     

Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10⁻³ Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.     

Effect of deposition pressure on structural, optical and electrical properties of zinc selenide thin films

ZnSe thin films have been prepared by inert gas condensation method at different gas pressures. The influence of deposition pressure, on structural, optical and electrical properties of polycrystalline ZnSe films have been investigated using X-ray diffraction (XRD), optical transmission and conductivity measurements. The X-ray diffraction study reveals the sphalerite cubic structure of the ZnSe films oriented along the (1 1 1) direction. The structural parameters such as particle size [6.65-22.24 nm], strain [4.01-46.6×10⁻³ lin⁻² m⁻⁴] and dislocation density [4.762-18.57×10¹⁵ lin m⁻²] have been evaluated. Optical transmittance measurements indicate the existence of direct allowed optical transition with a corresponding energy gap in the range 2.60-3.00 eV. The dark conductivity (σ_d) and photoconductivity (σ_ph) measurements, in the temperature range 253-358 K, indicate that the conduction in these materials is through an activated process having two activation energies. σ_d and σ_ph values decrease with the decrease in the crystallite size. The values of carrier life time have been calculated and are found to decrease with the reduction in the particle size. The conduction mechanism in present samples has been explained, and the density of surface states [9.84-21.4×10¹³ cm⁻²] and impurity concentration [4.66-31.80×10¹⁹ cm⁻³] have also been calculated.     

Anomalous temperature dependence of the electrical conductivity of zinc oxide thin films

The temperature dependence of the conductivity of Ga-doped ZnO thin films was examined in humid and dry atmospheres. The conductivity initially increases to the maximum (range 1) and then decreases to the minimum (range 2) and again increases (range 3) in the heating run under humid air atmosphere. The subsequent cooling reduces the conductivity to less than that for the heating run. The extent of the reduction becomes large as the cooling rate increases. The extrema character in the conductivity versus temperature curves does not disappear under nitrogen gas atmosphere provided it is humid. On the other hand, the conductivity in the ranges 1 and 2 decreases so significantly that the extrema character disappears in the driest air as possible. These behaviors are explained by assuming that the dissociatively chemisorbed states of water vapor act as electron donors and desorb at the higher temperature, and the desorption as well as the chemisorption require a time for attaining equilibrium. With this in view, a theoretical analysis is given of semiconducting films thinner than the depletion boundary layer thickness, and numerical curves fitting to the experimental results are obtained. The heat of chemisorption of nonionized water q° is 1.35 eV and the energy levels of water chemisorption donors and oxygen chemisorption acceptors are at 0.66 and 0.59 eV below the conduction band edge, respectively.     

Effect of grain boundary on electrical properties of polycrystalline lanthanum nickel oxide thin films

In the present work, lanthanum nickel oxide (LNO) thin films were prepared by the sol-gel method. Microstructures of the films were tailored by changing sol concentration so as to investigate the effect of grain boundary on the transport properties of electrons in the polycrystalline LNO films. Based on the temperature dependence of the resistivity and the magnetic field dependence of the magnetoresistance (MR) at various temperatures, the factors that dominate the transport behavior in the polycrystalline LNO films were explored in terms of weak localization and strong localization. The results show that the grain boundary has a significant influence on the transport behavior of the electrons in LNO films at a low-temperature region, which can be captured by a variable-range hopping (VRH) model. The increase of metal–insulator (M–I) transition temperature is ascribed to Anderson localization in grain boundary. At a high-temperature region, electron–electron scattering and electron–phonon scattering predominates in the films. In this case, the existence of more grain boundary shows a minor effect on the transport behavior of the electrons but elevates the residual resistivity of the films.     

Investigation of electrical and optoelectronic properties of zinc oxide nanowires

Zinc oxide (ZnO) nanowires have been synthesized by using tubular furnace chemical vapor deposition technique. The morphology, chemical composition and crystal structure of as-synthesized ZnO nanowires were examined by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) techniques. Four-terminal current-voltage (I-V) measurements were employed to study the electrical conductance of ZnO nanowires under various testing gas environments for gas sensing purpose. The I-V curves at temperature ranging from 150 to 300 K were recorded in the testing chamber under vacuum. The Arrhenius plot shows perfect linear relationship between the logarithm of the current I and inverse temperature 1/T. The donor level of the semiconducting nanowires is about 326 meV. The I-V behaviors were found to be reversible and repeatable with testing gases. The electrical conductivity was enhanced by a factor of four with ambient CO gas compared to that in vacuum and other testing gases. The optoelectronic properties of the ZnO nanowires were obtained by two-terminal I-V measurement method while the nanowires were illuminated by a ruby laser. The electrical conductivity was increased by 60% when the laser was present in comparison to that when the laser was off. Those significant changes suggest that nano-devices constructed by the ZnO nanowires could be used in gas sensing and optical switching applications.     

Synthesis and luminescent properties of PEO/lanthanide oxide nanoparticle hybrid films

In this study, we investigate the optical properties of lanthanide oxide nanoparticles dispersed in poly(ethylene oxide) (PEO) network as thermally stable polymeric films. The aim of this work is both to keep a good optical transparency in the visible domain and to obtain luminescent materials after incorporation of nanoparticles. For this purpose, we develop luminescent nanocrystals of oxides containing terbium ion as a doping element in Gd₂O₃. These sub-5-nm lanthanide oxides nanoparticles have been prepared by direct oxide precipitation in high-boiling polyalcohol solutions and characterized by luminescence spectroscopy. PEO/lanthanide oxide nanohybrid films are prepared by radical polymerization of poly(ethylene glycol) methacrylate after introduction of lanthanide oxide particles.As a first result; the obtained films present interesting luminescence properties with a very low lanthanide oxide content (up to 0.29 wt%). Furthermore, these films are still transparent and keep their original mechanical properties.Prior to describe the specific applications to optical use, we report here the dynamic mechanical analysis (DMA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), and luminescent properties of. nanohybrid films.     

Effects of rf power on surface-morphological, structural and electrical properties of aluminium-doped zinc oxide films by magnetron sputtering

Aluminium-doped zinc oxide (ZnO:Al) films were prepared by magnetron sputtering at different radio-frequency powers (P_rf) of 50, 100, 150 and 200 W. The properties of the films were characterised by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Raman microscopy, and spectrophotometry with the emphasis on the evolution of compositional, surface-morphological, optical, electrical and microstructural properties. XPS spectra showed that within the detection limit the films are chemically identical to near-stoichiometric ZnO. AFM revealed that root-mean-square roughness of the films has almost linear increase with increasing P_rf. Optical band gap E_gopt of the films increases from 3.31 to 3.51 eV when P_rf increases from 50 to 200 W. A widening E_gopt of the ZnO:Al films compared to the band gap (∼3.29 eV) of undoped ZnO films is attributed to a net result of the competition between the Burstein-Moss effect and many-body effects. An electron concentration in the films was calculated in the range of 3.73 × 10¹⁹ to 2.12 × 10²⁰ cm⁻³. Raman spectroscopy analysis indicated that well-identified peaks appear at around 439 cm⁻¹ for all samples, corresponding to the band characteristics of the wurtzite phase. Raman peaks in the range 573-579 cm⁻¹ are also observed, corresponding to the A₁ (LO) mode of ZnO.     

Grain size and composition effects on the cathodoluminescent characteristics of sprayed zinc oxide thin films

The cathodoluminescent (CL) property of 1?µm-thick sprayed ZnO films is here reported versus the sample mean grain size (D) resulting from the spraying flow rate (f) parameter. The deposition process, performed at T _s?=?723?K, leads to hexagonal packed structure of [002] preferred growth orientation, regardless of the f value. The CL-spectra are typical of the film's growth rate (r) and the intensity (I) of the three main emission lines (λ?≈?386, 497 and 644?nm) is greatly affected by D that is ranged between 0.40 and 0.90?µm. Their (I???D) curves have a similar profile that presents a common critical point, D _c?=?0.57?µm, depicting two different luminescent behaviours of the material. Smaller grains exhibit optimal intensities. Their band-edge near UV line (λ?≈?386?nm) proceeds from a phonon replica phenomenon; excess of interstitial Zn explains the result of their blue–green line (λ?≈?497?nm) while deep-level interactions effect is the relevant interpretation for the red one (λ?≈?644?nm). A decrease of luminescent properties from D?=?0.45?µm till D _c is assigned to the sample microstructure degradation. The bell-shaped profile of CL-intensity for D>D _c reflects a competition between the increase of the material reactive part and the collapse of crystallites quality due to higher content of Cl and S impurities in bigger grains. A limit of the two approaches appears at D?=?0.65?µm.     

Electrostatic spray deposited zinc oxide films for gas sensor applications

In this work, thin films of zinc oxide (ZnO) for gas-sensor applications were deposited on platinum coated alumina substrate, using electrostatic spray deposition (ESD) technique. As precursor solution zinc acetate in ethanol was used. Scanning electron microscopy (SEM) evaluation showed a porous and homogeneous film morphology and the energy dispersive X-ray analysis (EDX) confirmed the composition of the films with no presence of other impurities. The microstructure studied with X-ray diffraction (XRD) and Raman spectroscopy indicated that the ZnO oxide films are crystallized in a hexagonal wurtzite phase. The films showed good sensitivity to 1 ppm nitrogen dioxide (NO₂) at 300 °C while a much lower sensitivity to 12 ppm hydrogen sulphide (H₂S).     

Effects of electron-beam irradiation on structural,electrical, and optical properties of amorphous indium gallium zinc oxide thin films

High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2–4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.     

Optical and electrical properties of nanocrystal zinc oxide films prepared by dc magnetron sputtering at different sputtering pressures

The nanocrystal thin films of zinc oxide doped by Al (ZnO:Al) were deposited by dc reactive magnetron sputtering on the glass substrates, in the pressure range of 33-51 Pa. From the X-ray diffraction patterns, the nanocrystalline structure of ZnO:Al films and the grain size were determined. The optical transmission spectra depend from the sputtering pressure, but their average value was 90% in the range from 33 Pa to 47 Pa. Also, the sputtering pressure changes the optical band gap of ZnO:Al films, which is highest for films deposited at 37 Pa, 40 Pa and 47 Pa. The obtained films at room temperature have a sheet resistance of 190 Ω/cm² which increases with time, but the films annealed at temperature of 400 °C have constant resistance. The surface morphology of the films was studied by Scanning electron microscopy. XPS spectra showed that the peak of O1s of the as-deposited films is smaller than the peak of the annealed ZnO:Al films.     

Effect of annealing temperature on the optical constants of zinc oxide films

In this paper, the effect of annealing temperature on optical constants was studied. The ZnO films were deposited on microscopic glass substrates using the sol-gel method for various annealing temperatures. The deposited zinc oxide (ZnO) films were characterized by an X-ray diffractometer (XRD), a spectrophotometer and scanning electron microscopy (SEM). The transmittance spectra recorded through the spectrophotometer exhibits 90% transmittance. The XRD spectra showed polycrystalline nature of ZnO film. Optical constants were determined through transmittance spectra using an envelope method. It was found that there was a significant effect of annealing temperature on the refractive index and extinction coefficient of deposited ZnO films. In this experiment, the optimum refractive index value of 1.97 was obtained at 350 °C annealing temperature at visible (vis) wavelength. The optical energy gap was found to be of ∼3.2 eV for all the samples. The top view of SEM showed the ZnO grain growth on the glass substrates.