共查询到19条相似文献,搜索用时 187 毫秒
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本文应用透射法和超显微法对用金缀饰后的LiNbO3和LiTaO3单晶体进行了直接观测,观察到两种晶体中亚晶界的三维面貌,对亚晶界进行了极图分析,并进一步用Frank公式进行了定量验证。通过对位错网及三叉亚晶界的分析,表明该类晶体中存在的位错的Burgers矢量是:最短点阵平移矢量——六角晶胞的基矢<1210>,次短点阵平移矢量——菱胞基矢1/3<0111>,以及再次短点阵平移矢量——菱胞短体对角线分1/3<2021>。
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用腐蚀法和X射线形貌术研究了α-SiC晶体中的位错。所用的腐蚀剂为熔融氢氧化钾。证实了尖底蚀坑与位错的一一对应关系。由于[0001]方向的螺型位错的Burgers矢量比刃型位错的Burgers矢量大得多,故可从蚀坑的深浅来判别螺型位错和刃型位错。给出了蚀坑形状和多型体晶体结构的对应关系。研究了表面生长蜷线的形态与SiC晶体中的位错及位错运动的关系。X射线形貌图显示了α-SiC晶体中相当数量的位错处于基面C面上。生长位错从晶体“根部”成核并随着晶体生长前沿的向前推进而延伸,因而位错线的方向常常沿[101O]和[1120]方向。将腐蚀法和X射线形貌术结合起来才能全面显示α-SiC晶体中的位错。
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利用X射线投影貌相术观察和分析了硅蹼中的位错和层错。在生长态硅蹼中,除观察到柏氏矢量为1/2<110>的刃型、螺型与60°全位错以及柏氏矢量为1/6<112>的Shockley刃型半位错外,还观察到平行于硅蹼表面的大面积层错和蹼中的60°,30°Shockley半位错。位错在热处理过程中运动并发生位错反应形成近六角形的位错网络。热处理改变生长态硅蹼中层错的组态和衬度,并由于杂质聚集破坏了Shockley半位错的消象法则。还观察到层错象中的位错。对所观察的结果都分别作了分析和简要的讨论。
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X射线衍射线形与晶体材料的微观结构密切相关.在晶粒尺寸衍射线形和微应变衍射线形可由Voigt函数近似描述的前提下,本文较详细地论述了由X射线衍射线形分析获取晶粒尺寸和位错等微观结构信息的方法.采用这种方法,对乙二醇还原法制备的Pt/C催化剂进行了X射线衍射线形分析.样品晶粒尺寸分布的对数正态均值为0.95 nm,对数正态方差为0.37.X射线衍射线形分析所得晶粒尺寸分布与透射电镜的测试结果符合较好.对样品的衍射线形积分宽度进行细致的比较,发现存在各向异性展宽现象.如果衍射线的各向异性展宽主要是由伯格斯矢量为1/2〈110〉的位错引起,可进一步计算位错密度值.结果表明,位错组态无论是螺型位错还是刃型位错,位错密度值的量级均约为1015/m2. 相似文献
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The effect of externally applied stress on the dislocation bias factor (BF) in bcc iron has been studied using a combination of atomistic static calculations and finite element integration. Three kinds of dislocations were considered, namely, a0/2〈1 1 1〉{1 1 0} screw, a0/2〈1 1 1〉{1 1 0} edge and a0〈1 0 0〉{0 0 1} edge dislocations. The computations reveal that the isotropic crystal expansion leads to an increasing or constant dislocation bias, depending on the Burgers vector and type of dislocation. On the other hand, compressive stress reduces the dislocation bias for all the dislocations studied. Variation of the dislocation BF depending on dislocation type and Burgers vector is discussed by analysing the modification of the interaction energy landscape and the capture efficiency values for the vacancy and self-interstitial atom. 相似文献
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The effect of dislocation stress fields on the sink efficiency thereof is studied for hydrogen interstitial atoms at temperatures of 293 and 600 K and at a dislocation density of 3 × 1014 m–2 in bcc iron crystal. Rectilinear full screw and edge dislocations in basic slip systems 〈111〉{110}, 〈111〉{112}, 〈100〉{100}, and 〈100〉{110} are considered. Diffusion of defects is simulated by means of the object kinetic Monte Carlo method. The energy of interaction between defects and dislocations is calculated using the anisotropic theory of elasticity. The elastic fields of dislocations result in a less than 25% change of the sink efficiency as compared to the noninteracting linear sink efficiency at a room temperature. The elastic fields of edge dislocations increase the dislocation sink efficiency, whereas the elastic fields of screw dislocations either decrease this parameter (in the case of dislocations with the Burgers vector being 1/2〈111〉) or do not affect it (in the case of dislocations with the Burgers vector being 〈100〉). At temperatures above 600 K, the dislocations affect the behavior of hydrogen in bcc iron mainly owing to a high binding energy between the hydrogen atom and dislocation cores. 相似文献
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《中国物理快报》2021,(6)
Reactions between dislocations are investigated in two-dimensional colloidal crystals. It is found that, because of the conservation of total Burgers vectors, the kinetics of the reaction is dependent on the the symmetry of the crystal lattice. Merging is possible only when the total Burgers vector of the reacting dislocations is in line with existing crystal lines. In non-merging reactions, the number of dislocations cannot be reduced but the interacting dislocations can exchange their Burgers vectors and migrate to different gliding lines. The changing of gliding lines promises additional annihilation in multi-dislocation reactions. The bonding of non-merging dislocations determines the configuration and the orientation of the grain boundaries. The findings in this study may shed new light on understanding of dislocations and have potential applications in fabrication of crystalline materials. 相似文献
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A VC doped WC-Co alloy is investigated using high resolution transmission electron microscopy. The VC grain growth inhibitor induces the presence of a thin layer on the surfaces of the WC grains in contact with Co and precipitates in the corners of Co pockets. These (VW)Cx compounds adopt an epitaxial orientation relationship with regards to the (0001) base facets of the WC crystals. Due to the small difference in lattice parameters, misfit dislocations are expected in the interfaces. Unlike the thin layers where no defects are observed, two kinds of dislocations are pointed out for larger precipitates. 1/6〈112〉VC interfacial dislocations are sometimes present while more often 1/2〈1¯10〉VC dislocations lying above the interface in the (VW)Cx phase are visible. 相似文献
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We present the results of an electron microscopy study of defects in plastically deformed single crystals of the intermetallic ξ′-(Al–Pd–Mn) phase. Pure edge dislocations with two different Burgers vector directions and four different Burgers vector magnitudes were found. All Burgers vector magnitudes observed can be described in terms of irrational fractions of the unit-cell parameters, and we have observed Burgers vector directions that can be indexed using irrational indices. The stacking faults observed have displacement vectors whose magnitudes and directions are incompatible with the unit cell of the ξ′ phase. A comparison of the Burgers vectors observed in this study with those reported for the corresponding icosahedral quasicrystal shows that they are equivalent with respect to their directions and lengths. This leads to the conclusion that local order rather than long-range periodic (or quasiperiodic) order governs the structure of defects in these materials. 相似文献
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本文应用蚀象法对电子束浮区区熔法制得的原生态钼单晶体中的亚晶界位错结构进行了直接观测。对于实验结果进行了细致的分析,并与亚晶界的Frank公式的一些预期结果比较,全面地证实了理论预测。对(111)面上平行蚀线方向的测量表明,它们大体沿着1/2〈111〉刃型位错的滑移面及攀移面的交线,从而证实了它们是这种位错所组成的一组位错倾侧型晶界。通过对蚀斑三叉亚晶界的分析,检验了推广后的Read-Shockley公式,同时表明存在着两组位错的倾侧晶界。对于(111)面上观察到的15组蚀线网络进行了分析,结果表明其中5组是1/2〈111〉/〈100〉网络,9组是〈100〉/〈110〉网络。分析中,除去应用Carrington等所发展的极图分析法以外,我们还根据Frank公式所规定的网线间距的关系式,提出了进一步定量检验的分析方法。实践证明,当极图分析不能获得唯一的结果时,这种定量检验法可以有效地确定位错网络的Burgers矢量。此外,我们还观察到奇位错和亚晶界交互作用的事例,特别是奇位错在亚晶界上引起“台阶”以及夹杂物和亚晶界交互作用的迹象。不同类型的亚晶界交接以及非平衡态的亚晶界也是经常可以观察到的。以上结果表明,蚀象法对于定量地研究原生态晶体中的亚晶界位错结构是极其有效的,其能力并不亚于电子显微镜薄膜透射法。 相似文献