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1.
采用金刚石压砧高压装置(DAC),对层状钙钛矿结构锰氧化物Ca  相似文献   

2.
将高压科学实验技术引入到近代物理实验课堂,采用刚玉代替金刚石作为压贴,并用黄铜或磷铜作为垫片,改进后的DAC压机成本低,可应用于学生实验.  相似文献   

3.
高压研究对于寻找高压新相、制备新材料、探索地球深部奥秘具有重要的意义,但高压研究的发展却受到高压技术水平的制约。针对小型超高压装置,简要回顾了普遍使用的金刚石对顶砧(Diamond Anvil Cell,DAC)、Paris-Edinburgh Press(P-E型压力装置)的发展历史,论述了DAC、P-E型压力装置、Palm Cubic-Anvil Cell(P-CAC)、Miniature Cubic-Anvil Cell(M-CAC)等小型超高压装置的设计原理与研究进展,总结了小型高压装置存在的问题,并对其发展趋势进行了展望。  相似文献   

4.
王海阔  贺端威  许超  刘方明  邓佶睿  何飞  王永坤  寇自力 《物理学报》2013,62(18):180703-180703
通过分析二级6-8型大腔体静高压装置八面体压腔的受力状况, 研制了一种使用成本低、尺寸大且易于加工的多晶金刚石-硬质合金复合二级(末级)顶锤(压砧). 采用原位电阻测量观测Zr在高压下相变(α-ω, 7.96 GPa; ω-β, 34.5 GPa)的方法, 标定了由多晶金刚石-硬质合金复合末级压砧构建的5.5/1.5(传压介质边长/二级顶锤锤面边长, 单位: mm)组装的腔体压力. 实验表明, 自行研制的多晶金刚石-硬质合金复合末级压砧可使基于国产六面顶压机构架的二级加压系统的压力产生上限从约20 GPa提高到35 GPa以上, 拓展了国内大腔体静高压技术的压力产生范围. 应用这一技术, 我们期望经过末级压砧材料与压腔设计的进一步优化, 在基于国产六面顶压机的二级6-8 型大腔体静高压装置压腔中产生超过50 GPa的高压. 关键词: 二级6-8型大腔体静高压装置 多晶金刚石-硬质合金复合末级压砧 压力标定  相似文献   

5.
 详细地介绍了百吉帕超高压实验的方法和步骤。实验是在具有杠杆式的金刚石对顶压砧(DAC)高压装置上完成的。以Ag为样品,进行百吉帕超高压下X光衍射的实验研究。最高压力达121 GPa,并获得了若干有意义的实验曲线和结果。  相似文献   

6.
 本文采用DAC(金刚石压砧高压腔)装置,对氧化镍进行了静水压、非静水压、电导率测量等系统高压实验,获取了氧化镍等温压缩、高压相变及电导率压力效应的新结果,并在实验数据的基础上,对其高压相变与电性及磁性变化关系及体弹性模量作了分析讨论。  相似文献   

7.
β-Ga2O3是一种宽禁带半导体材料(Eg=4.8 eV).研究β-Ga2O3在高压(高应力)条件下的相稳定性和晶格动力学特性对其材料应用具有重要的参考价值.目前关于Ga2O3在高压下的晶格动力学特性研究较少,且Ga2O3的β→α的高压相变压力仍然具有争议.本工作采用基于金刚石压砧(DAC)的高压拉曼光谱技术研究了Ga...  相似文献   

8.
偶氮苯是一种常见染色剂和传统的光致变色材料,其光致异构化特性引起了学者们的广泛关注和研究。我们对偶氮苯的发光特性进行了进一步研究,发现其对压力也同样具有响应特性。利用金刚石对顶砧装置(DAC)对偶氮苯进行了高压荧光和拉曼实验检测,探究压力对其变色行为的影响,从而揭示其变色机理。  相似文献   

9.
 我们用金刚石压砧装置(DAC)高压X射线粉末衍射照相方法,研究了β-BaB2O4晶体的相变。压力从0.1 MPa逐步加至17.6 GPa,发现BBO由室温下的六方相经历了若干次相变后,当压力加至11.5 GPa时,转变为无定形相。在11.5 GPa压力前的相变是可逆的,一旦进入无定形相,则相变是不可逆的。  相似文献   

10.
1978年美国 Carnegie研究所的毛河光和Bell采用他们设计的金刚石砧高压容器,可以达到172GPa1)的静压强[1]。这个压强相当于地心压强的一半.在这个压力下,他们观察到很多有趣的现象,受到了广泛的注意. 一、金刚石砧高压技术的发展概况 Bridgman容器(或者是Drickamer改进的Bridgman容器)开拓了许多物理现象的高压研究的领域,但由于硬质合金压砧材料强度的限制,使更高压强下的现象无法研究。因此人们自然想到使用最硬的材料──金刚石来作压砧.1950年Lawson和Tang[2]首先使用两个单晶金刚石做成一个高压腔,利用此装置他们进行了X光衍射研究…  相似文献   

11.
苯甲酸脱羧反应过程的拉曼光谱研究   总被引:1,自引:0,他引:1  
应用水热金刚石压腔结合拉曼光谱技术研究了升温过程中苯甲酸在水中的变化及拉曼谱图。结果表明:低温升温过程中,苯甲酸的拉曼谱图中各个特征振动谱峰没有变化,苯甲酸没有与水反应。随着温度的继续升高,苯甲酸的拉曼谱图中的特征振动峰逐渐变弱。升至150 ℃时,羧基的拉曼特征谱峰消失,说明此过程中苯甲酸发生了脱羧反应。继续升温至170 ℃,苯甲酸溶解消失。随后将体系降至常温,发现有晶体析出。由其拉曼谱图可知,重结晶的晶体含有苯环的特征峰,说明有芳香烃析出。但是没有测到羧基的特征拉曼谱峰,说明重结晶的晶体不是苯甲酸。整个过程可以说明,芳香烃在溶解重结晶过程中是可逆的,羧基是不可逆的。  相似文献   

12.

Much work on semiconductors, soft solids and biological materials does not require the megabar capability of the diamond anvil cell; a few accurate kbar being all that may be required. Work in this range poses its own challenges, to make the experiments routine, safe and reliable, and well-calibrated. We contrast diamond anvil cells working at what for them is very low pressure, with traditional bombs working at what for them is dangerously high pressure. We describe our preferred solution, a single-diamond cell, and demonstrate its use with Raman data from ethanol under low pressure. Negative hydrostatic pressure cannot be obtained by traditional methods. However, we present data showing the Raman spectrum of ethanol apparently at the negative pressure of m 3 kbar.  相似文献   

13.
Zinc cyanide is an interesting negative thermal expansion (NTE) material exhibiting cubic structure at ambient pressure and temperature. We have investigated the structural stability of zinc cyanide under high pressure up to 5.2 GPa by performing X-ray powder diffraction in a diamond anvil cell. Under very low pressure of about 0.6 GPa, the diffraction peaks drastically reduce in intensity, indicating possible onset of disorder in the structure. In this paper, its high pressure structural and compressibility behaviour, bulk modulus and the pressure derivative of bulk modulus are reported.  相似文献   

14.
应用金刚石压腔结合拉曼光谱技术研究了方解石-Ⅰ在静水高压作用下相转变为方解石-Ⅲ的过程.结果表明,压力增大的过程中,方解石-Ⅰ晶体的三个拉曼特征峰均向高频移动;在1 103 MPa条件下,体系中的水介质结冰,冰点处方解石-Ⅰ晶体性质没有变化;继续加压至1 752 MPa时矿物的拉曼特征峰发生了突变,表明晶体由方解石-Ⅰ相转变为方解石-Ⅲ相中的的A型方解石;相变后矿物的拉曼特征峰显示了从矿物内部向边缘的过渡中,相变程度逐渐增大的趋势;该研究也体现了金刚石压腔结合拉曼光谱技术在定性分析矿物结构相变过程中原位测试的优势.  相似文献   

15.
 本文介绍了作者利用国内加工的金刚石压砧装置及组建的微区光谱系统进行100 GPa(百万大气压)准静水压光谱学实验的概况,证明压力产生装置和微区光谱系统的多功能性是充分可靠的。实验中遇到的压力产生能力超过压力测量能力的事实,反映了高压光谱学实验在压力范围扩大时所遇到的挑战。文中对高压下的拉曼、发射、吸收及反射光谱的实验原理和实验方法也作了概略的介绍。  相似文献   

16.
The in situ electrical resistance and transport activation energies of solid C60 fullerene have been measured under high pressure up to 25 GPa in the temperature range of 300-423 K by using a designed diamond anvil cell. In the experiment, four parts of boron-doped diamond films fabricated on one anvil were used as electrical measurement probes and a W-Ta thin film thermocouple which was integrated on the other diamond anvil was used to measure the temperature. The current results indicate that the measured high-pressure resistances are bigger than those reported before at the same pressure and there is no pressure-independent resistance increase before 8 GPa. From the temperature dependence of the resistivity, the C60 behaviors as a semiconductor and the activation energies of the cubic C60 fullerene are 0.49, 0.43, and 0.36 eV at 13, 15, and 19 GPa, respectively.  相似文献   

17.
 在金刚石压砧装置上,用氧化铝膜作绝热层,借助同步辐射和双面激光加温系统,分析了硬水铝石在高温高压下的结构变化,并分别用理论和实验的方法得出了其结构参数,得到了样品在不同压力温度下的体模量。这对于人们认识和研究地壳结构和地球内部物质的演化具有重要意义。研究发现,在常温和高温时其压缩率有明显不同,在高温高压范围内,其晶格常数和晶胞体积的变化非常接近样品在高压常温下的情况;而在高温低压范围内,情形和常温时有较大差别。在实验过程中并没有发现相变的产生。  相似文献   

18.
The film-fabricating technology has been used to prepare the microcircuit on diamond anvil for resistivity measurement under extreme conditions. We chose molybdenum as the electrode material and alumina as the insulator and protective material. The sample thickness measurement was conducted and then the resistivity correction was performed under different thickness. The experimental error was proved to be less than 10%. By mounting alumina film between diamond anvil and microcircuit, high-temperature performance of a laser heating diamond anvil cell was improved obviously, which is available for in situ resistivity measurement under high pressure and high temperature. Meanwhile, the impedance spectroscopy of a powdered semiconductor sample was detected. Through the impedance arcs obtained, the grain boundary contribution to the resistivity can be well distinguished.  相似文献   

19.
Epitaxial boron-doped diamond films were grown by microwave plasma chemical vapor deposition for application as heating elements in high pressure diamond anvil cell devices. To a mixture of hydrogen, methane and oxygen, diborane concentrations of 240–1200 parts per million were added to prepare five diamond thin-film samples. Surface morphology has been observed to change depending on the amount of diborane added to the feed gas mixture. Single-crystal diamond film with a lowest room temperature resistivity of 18 mΩ cm was fabricated and temperature variation of resistivity was studied to a low temperature of 12 K. The observed minima in resistivity values with temperature for these samples have been attributed to a change in conduction mechanism from band conduction to hopping conduction. We also present a novel fabrication methodology for monocrystalline electrically conducting channels in diamond and present preliminary heating data with a boron-doped designer diamond anvil to 620 K at ambient pressure.  相似文献   

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