共查询到20条相似文献,搜索用时 62 毫秒
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介绍了用高真空中热蒸发镀膜的方法制备并五苯薄膜场效应晶体管.作为场效应管半导体层的并五苯薄膜沉积在p型Si(100)(14.0~20.0 Ω·cm)衬底上.场效应管中并五苯薄膜厚度为70nm,源极、漏极和栅极(Au)的厚度均为50nm,绝缘层SiO2的厚度为300nm,沟道宽度为190μm,沟道长度为15μm.用AFM表征了并五苯薄膜表面形貌,并研究了薄膜生长速率对并五苯场效应晶体管电学特性的影响.在薄膜生长速率为0.24和1.36 nm/min时,场效应管的载流子迁移率分别为2.7×10-4和2.2×10-6 cm2/(V·s). 相似文献
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介绍了用高真空中热蒸发镀膜的方法制备并五苯薄膜场效应晶体管. 作为场效应管半导体层的并五苯薄膜沉积在p型Si (100) (14.0~20.0Ω·cm)衬底上. 场效应管中并五苯薄膜厚度为70nm,源极、漏极和栅极(Au)的厚度均为50nm,绝缘层SiO2的厚度为300nm,沟道宽度为190μm,沟道长度为15μm. 用AFM表征了并五苯薄膜表面形貌,并研究了薄膜生长速率对并五苯场效应晶体管电学特性的影响. 在薄膜生长速率为024和136nm/min时,场效应管的载流子迁移率分别为2.7E-4和2.2E-6cm2/(V·s) . 相似文献
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有源频率选择表面,是指在频率选择表面中加入变容二极管或PIN二极管等有源器件构成的FSS结构,通过有源器件的可调性来实现对FSS性能的控制。文中根据有源器件的电容等效原理,设计了一种方形缝隙FSS结构,研究了电容加载对FSS传输特性的影响。仿真结果表明,加载电容后其谐振频点向低频偏移,带宽减小,且加载电容对FSS传输特性有较好的可控性。 相似文献
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Pavan Pujar Haewon Cho Srinivas Gandla Muhammad Naqi Seongin Hong Sunkook Kim 《Advanced functional materials》2021,31(43):2103748
The fabrication of Hf0.5Zr0.5O2-ferroelectric negative capacitor using solution combustion is presented for the first time. The starting materials used for the solution combustion to form equimolar Hf0.5Zr0.5O2 are to act as both combustible elements and cation sources. Jain's method, which is used for estimating the stoichiometric quantities of precursors in propellant chemistry, has also been modified and applied. The conventional assumption for this method that molecular oxygen does not take part in the reaction is refuted and stoichiometric combustion in the presence of molecular oxygen is proposed. This reaction is followed by post-rapid thermal processing to stabilize the metastable, non-centrosymmetric orthorhombic phase. The thin film stacks, Hf0.5Zr0.5O2/HfO2, are used to achieve sub-thermionic swing (forward sweep: 25.42 ± 8.05 mV dec−1, reverse sweep: 42.56 ± 4.87 mV dec−1) in MoS2 negative capacitance field effect transistors with a hysteresis of ≈ 40 mV at 1 nA, resulting in ultra-low-power operation. 相似文献
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多晶硅薄膜晶体管具有独特的栅电容特性,即泄漏区中栅源电容的反常增大和饱和区中栅漏电容由于kink效应的增大.基于Meyer模型,考虑了泄漏产生效应和kink效应,对多晶硅薄膜晶体管的栅漏电容和栅源电容特性进行了建模研究.对实验数据进行拟合发现,提出的模型与实验数据符合得较好,能准确地预测多晶硅薄膜晶体管的栅电容特性. 相似文献
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基于表面势的多晶硅薄膜晶体管的栅电容模型 总被引:1,自引:0,他引:1
显式地推导多晶硅薄膜晶体管(Polysilicon thin-film transistors,poly-SiTFT)表面势隐含方程的近似解,该求解法非迭代的计算大大地提高了计算效率,且精确度非常高,与数值迭代结果比较,绝对误差范围只在纳伏数量级。利用求得的表面势,建立了一个poly-SiTFT栅电容模型,该电容电压模型能连续、准确地描述poly-SiTFT在线性区和饱和区的动态特性,同时该模型考虑了kink效应、沟道长度调制效应和寄生电容等。对实验数据进行拟合发现,提出的模型与实验数据符合得较好,能准确地预测poly-SiTFT的栅电容特性。 相似文献
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Abramov I. I. Kolomeitseva N. V. Labunov V. A. Romanova I. A. Shcherbakova I. Yu. 《Russian Microelectronics》2021,50(2):118-125
Russian Microelectronics - Field-effect graphene transistors (FGTs) based on single-layer graphene using the developed simplified combined self-consistent model are simulated. It is used to compare... 相似文献
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A High‐Capacitance Salt‐Free Dielectric for Self‐Healable,Printable, and Flexible Organic Field Effect Transistors and Chemical Sensor 下载免费PDF全文
Weiguo Huang Kalpana Besar Yong Zhang Shyuan Yang Gregory Wiedman Yu Liu Wenmin Guo Jian Song Kevin Hemker Kalina Hristova Ionnis J. Kymissis Howard E. Katz 《Advanced functional materials》2015,25(24):3745-3755
Printable and flexible electronics attract sustained attention for their low cost, easy scale up, and potential application in wearable and implantable sensors. However, they are susceptible to scratching, rupture, or other damage from bending or stretching due to their “soft” nature compared to their rigid counterparts (Si‐based electronics), leading to loss of functionality. Self‐healing capability is highly desirable for these “soft” electronic devices. Here, a versatile self‐healing polymer blend dielectric is developed with no added salts and it is integrated into organic field transistors (OFETs) as a gate insulator material. This polymer blend exhibits an unusually high thin film capacitance (1400 nF cm?2 at 120 nm thickness and 20–100 Hz). Furthermore, it shows pronounced electrical and mechanical self‐healing behavior, can serve as the gate dielectric for organic semiconductors, and can even induce healing of the conductivity of a layer coated above it together with the process of healing itself. Based on these attractive properties, we developed a self‐healable, low‐voltage operable, printed, and flexible OFET for the first time, showing promise for vapor sensing as well as conventional OFET applications. 相似文献
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叙述了电容应变式流体压力传感器的基本原理,给出了一种电容应变式流体压力传感器的检测电路,并分析了流体压力大小与传感器输出电压的关系。实验结果表明,该传感器具有精度高、线性度好、灵敏度大等优点,尤其适于微压力和大动态力的测量。 相似文献
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Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombi-nation(R-DCIV)at SiO<,2>/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Rea-Hall recombination kinetics and the Fermi distributions for electrons and holes.Insignificant distortion is observed over 90%of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory.This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. 相似文献