Geometry dependence of spin-spin couplings in cyanamide by DFT analysis.

There have been numerous theoretical and experimental investigations examining NMR parameters related to non-amino N-H...N H-bonded moieties in both biological and chemical contexts. In contrast, little information on the geometry dependence of NMR parameters related to the biologically important H-bond donor amino group is available. Herein, the geometric dependencies of the one-bond amino N-H spin-spin coupling constants [(1)J(NH)] in the cyanamide monomer and dimer have been computed with B3LYP and the aug-cc-pVTZ-su0 basis set. In an isolated planar cyanamide molecule, the |(1)J(NH)| couplings were found to increase as the N-H bond lengthened. In contrast, in the planar cyanamide dimer the size of the H-bonded amino N-H coupling (|(1)J(N(d)H(d))|) decreased with increasing N(d)H(d) bond length. The |(1)J(N(d)H(d))| coupling was larger than the |(1)J(N(d)H(free))| coupling for N(d)H(d) distances up to 1.18 A (for a fixed N(d)H(free) distance of 1.006 A). Hence, the decrease of |(1)J(NH)| with increasing N-H distance, as well as the larger value of |(1)J(N(d)H(d))| compared to |(1)J(N(d)H(free))|, were only observed for situations where the amino group is involved in an H-bonding interaction. This is attributed to electron redistribution induced by the presence of the second cyanamide molecule. Similar electron-redistribution effects are thought to be responsible for the observed distance dependence of computed (1)J(NH) couplings of H-bonded amino groups in near-planar G-quartet structures. Here, the |(1)J(NH)| couplings of the amino N-H bonds decreased with increasing N-H bond length whereas the |(1)J(N(d)H(d))| couplings are approximately 7 Hz larger than the |(1)J(N(d)H(free))| couplings, despite the longer N(d)-H(d) bond length.     

A DFT study of SiH(4) activation by Cp(2)LnH

A theoretical study of SiH(4) activation by Cp(2)LnH complexes for the entire series of lanthanides has been carried out at the DFT-B3PW91 level of theory. The reaction paths corresponding to H/H exchange and silylation, formation of Cp(2)Ln(SiH(3)), have been computed. They both occur via a single-step sigma-bond metathesis mechanism. For the athermal H/H exchange reaction, the calculated activation barrier averages 1.8 kcal.mol(-)(1) relative to the precursor adduct Cp(2)LnH(eta(2)-SiH(4)) for all lanthanide elements. The silylation path is slightly exogenic (DeltaE approximately -6.5 kcal.mol(-1)) with an activation barrier averaging 5.2 kcal.mol(-1) relative to the precursor adduct where SiH(4) is bonded by two Si-H bonds. Both pathways are therefore thermally accessible. The H/H exchange path is calculated to be kinetically more favorable whereas the silylation reaction is thermodynamically preferred. The reactivity of this familly of lanthanide complexes with SiH(4) contrasts strongly with that obtained previously with CH(4). The considerably lower activation barrier for silylation relative to methylation is attributed to the ability of Si to become hypervalent.     

Spektroskopische Untersuchungen zu Substituenteneffekten in Silylmethylsilanen

Spectroscopic Investigations on Substituent Effects in Silylmethylsilanes The silanes Me_3?n(Me₃SiCH₂)_nSiH (n = 1–3), (RMe₂SiCH₂)₃SiH (R = n-Bu, n-Pr, Et, PhCH₂, Ph) and Me₃ElCH₂SiMe₂H (El = Ge, Sn) were prepared. The frequencies of the Si? H stretching vibration, the ²⁹Si? ¹H coupling constants and the ²⁹Si n.m.r. chemical shifts were measured. The ?(SiH) and J(²⁹Si? ¹H) values in the silanes Me_3?n(Me₃SiCH₂)_nSiH depend on the number of trimethylsilymethyl groups. There is hardly an influence of the substituents R on these values in the silanes (RMe₂SiCH₂)₃SiH. The frequencies of the Si? H stretching vibrations in the silanes Me₃ElCH₂SiMe₂H (El = Si, Ge, Sn) show the order Si?Ge > Sn. The ₂₉Si n.m.r. chemical shifts of the Si(H) signals are approximately equal in the silanes Me_3?n(Me₃SiCH₂)_nSiH and (RMe₂SiCH₂)₃SiH.     

Thermal decomposition mechanism of disilane

Thermal decomposition of disilane was investigated using time-of-flight (TOF) mass spectrometry coupled with vacuum ultraviolet single-photon ionization (VUV-SPI) at a temperature range of 675-740 K and total pressure of 20-40 Torr. Si(n)H(m) species were photoionized by VUV radiation at 10.5 eV (118 nm). Concentrations of disilane and trisilane during thermal decomposition of disilane were quantitatively measured using the VUV-SPI method. Formation of Si(2)H(4) species was also examined. On the basis of pressure-dependent rate constants of disilane dissociation reported by Matsumoto et al. [J. Phys. Chem. A 2005, 109, 4911], kinetic simulation including gas-phase and surface reactions was performed to analyze thermal decomposition mechanisms of disilane. The branching ratio for (R1) Si(2)H(6) --> SiH(4) + SiH(2)/(R2) Si(2)H(6) --> H(2) + H(3)SiSiH was derived by the pressure-dependent rate constants. Temperature and reaction time dependences of disilane loss and formation of trisilane were well represented by the kinetic simulation. Comparison between the experimental results and the kinetic simulation results suggested that about 70% of consumed disilane was converted to trisilane, which was observed as one of the main reaction products under the present experimental conditions.     

Ab initio chemical kinetics for SiH3 reactions with Si(x)H2x+2 (x = 1-4)

Gas-phase kinetics and mechanisms of SiH(3) reactions with SiH(4), Si(2)H(6), Si(3)H(8), and Si(4)H(10), processes of relevance to a-Si thin-film deposition, have been investigated by ab initio molecular orbital and transition-state theory (TST) calculations. Geometric parameters of all the species involved in the title reactions were optimized by density functional theory at the B3LYP and BH&HLYP levels with the 6-311++G(3df,2p) basis set. The potential energy surface of each reaction was refined at the CCSD(T)/6-311++G(3df,2p) level of theory. The results show that the most favorable low energy pathways in the SiH(3) reactions with these silanes occur by H abstraction, leading to the formation of SiH(4) + Si(x)H(2x+1) (silanyl) radicals. For both Si(3)H(8) and n-Si(4)H(10) reactions, the lowest energy barrier channels take place by secondary Si-H abstraction, yielding SiH(4) + s-Si(3)H(7) and SiH(4) + s-Si(4)H(9), respectively. In the i-Si(4)H(10) reaction, tertiary Si-H abstraction has the lowest barrier producing SiH(4) + t-Si(4)H(9). In addition, direct SiH(3)-for-X substitution reactions forming Si(2)H(6) + X (X = H or silanyls) can also occur, but with significantly higher reaction barriers. A comparison of the SiH(3) reactions with the analogous CH(3) reactions with alkanes has been made. The rate constants for low-energy product channels have been calculated for the temperature range 300-2500 K by TST with Eckart tunneling corrections. These results, together with predicted heats of formation of various silanyl radicals and Si(4)H(10) isomers, have been tabulated for modeling of a-Si:H film growth by chemical vapor deposition.     

Structures, energetics, and aromaticities of the tetrasilacyclobutadiene dianion and related compounds: (Si4H4)(2-), (Si4H4)(2-)·2Li+, [Si4(SiH3)4](2-)·2Li+, [Si4(SiH3)4](2-)·2Na+, and [Si4(SiH3)4](2-)·2K+

In light of the important recent synthesis of a stable tetrasilacyclobutadiene dianion compound by Sekiguchi and co-workers and the absence of theoretical studies, ab initio methods have been used to investigate this dianion and a number of related species. These theoretical methods predict multiple minima for each compound, and most minima contain folded and bicyclic silicon rings. For (Si(4)H(4))(2-), (Si(4)H(4))(2-)·2Li(+), [Si(4)(SiH(3))(4)](2-)·2Li(+), [Si(4)(SiH(3))(4)](2-)·2Na(+), and [Si(4)(SiH(3))(4)](2-)·2K(+), respectively, the energetically lowest-lying structures are designated A-3 (C(2v) symmetry), B-8 (C(1) symmetry), C-1 (C(2) symmetry), D-1 (C(2) symmetry), and E-1 (C(2h) symmetry). None of these structures satisfies both the ring planarity and the cyclic bond equalization criteria of aromaticity. However, all of the representative NICS values of these lowest-lying structures are negative, indicating some aromatic character. Especially, structures C-1 and D-1 of C(2) symmetry effectively satisfy the criteria of aromaticity due to the slightly trapezoidal silicon rings, which are nearly planar with nearly equal bond lengths. SiH(3) substitution for hydrogen in (Si(4)H(4))(2-)·2Li(+) significantly reduces the degree of aromaticity, as reflected in the substantially smaller NICS absolute values for [Si(4)(SiH(3))(4)](2-)·2Li(+) than those of (Si(4)H(4))(2-) and (Si(4)H(4))(2-)·2Li(+). The aromaticity is further weakened in [Si(4)(SiH(3))(4)](2-)·2Na(+) and [Si(4)(SiH(3))(4)](2-)·2K(+) by replacing lithium with the sodium and potassium cations.     

Structure and reactivity of bis(silyl) dihydride complexes (PMe(3))(3)Ru(SiR(3))(2)(H)(2): model compounds and real intermediates in a dehydrogenative C-Si bond forming reaction

A series of stable complexes, (PMe(3))(3)Ru(SiR(3))(2)(H)(2) ((SiR(3))(2) = (SiH(2)Ph)(2), 3a; (SiHPh(2))(2), 3b; (SiMe(2)CH(2)CH(2)SiMe(2)), 3c), has been synthesized by the reaction of hydridosilanes with (PMe(3))(3)Ru(SiMe(3))H(3) or (PMe(3))(4)Ru(SiMe(3))H. Compounds 3a and 3c adopt overall pentagonal bipyramidal geometries in solution and the solid state, with phosphine and silyl ligands defining trigonal bipyramids and ruthenium hydrides arranged in the equatorial plane. Compound 3a exhibits meridional phosphines, with both silyl ligands equatorial, whereas the constraints of the chelate in 3c result in both axial and equatorial silyl environments and facial phosphines. Although there is no evidence for agostic Si-H interactions in 3a and 3b, the equatorial silyl group in 3c is in close contact with one hydride (1.81(4) A) and is moderately close to the other hydride (2.15(3) A) in the solid state and solution (nu(Ru.H.Si) = 1740 cm(-)(1) and nu(RuH) = 1940 cm(-)(1)). The analogous bis(silyl) dihydride, (PMe(3))(3)Ru(SiMe(3))(2)(H)(2) (3d), is not stable at room temperature, but can be generated in situ at low temperature from the 16e(-) complex (PMe(3))(3)Ru(SiMe(3))H (1) and HSiMe(3). Complexes 3b and 3d have been characterized by multinuclear, variable temperature NMR and appear to be isostructural with 3a. All four complexes exhibit dynamic NMR spectra, but the slow exchange limit could not be observed for 3c. Treatment of 1 with HSiMe(3) at room temperature leads to formation of (PMe(3))(3)Ru(SiMe(2)CH(2)SiMe(3))H(3) (4b) via a CH functionalization process critical to catalytic dehydrocoupling of HSiMe(3) at higher temperatures. Closer inspection of this reaction between -110 and -10 degrees C by NMR reveals a plethora of silyl hydride phosphine complexes formed by ligand redistribution prior to CH activation. Above ca. 0 degrees C this mixture converts cleanly via silane dehydrogenation to the very stable tris(phosphine) trihydride carbosilyl complex 4b. The structure of 4b was determined crystallographically and exhibits a tetrahedral P(3)Si environment around the metal with the three hydrides adjacent to silicon and capping the P(2)Si faces. Although strong Si.HRu interactions are not indicated in the structure or by IR, the HSi distances (2.00(4) - 2.09(4) A) and average coupling constant (J(SiH) = 25 Hz) suggest some degree of nonclassical SiH bonding in the RuH(3)Si moiety. The least hindered complex, 3a, reacts with carbon monoxide principally via an H(2) elimination pathway to yield mer-(PMe(3))(3)(CO)Ru(SiH(2)Ph)(2), with SiH elimination as a minor process. However, only SiH elimination and formation of (PMe(3))(3)(CO)Ru(SiR(3))H is observed for 3b-d. The most hindered bis(silyl) complex, 3d, is extremely labile and even in the absence of CO undergoes SiH reductive elimination to generate the 16e(-) species 1 (DeltaH(SiH)(-)(elim) = 11.0 +/- 0.6 kcal x mol(-)(1) and DeltaS(SiH)(-)(elim) = 40 +/- 2 cal x mol(-)(1) x K(-)(1); Delta = 9.2 +/- 0.8 kcal x mol(-)(1) and Delta = 9 +/- 3 cal x mol(-)(1).K(-)(1)). The minimum barrier for the H(2) reductive elimination can be estimated, and is higher than that for silane elimination at temperatures above ca. -50 degrees C. The thermodynamic preferences for oxidative additions to 1 are dominated by entropy contributions and steric effects. Addition of H(2) is by far most favorable, whereas the relative aptitudes for intramolecular silyl CH activation and intermolecular SiH addition are strongly dependent on temperature (DeltaH(SiH)(-)(add) = -11.0 +/- 0.6 kcal x mol(-)(1) and DeltaS(SiH)(-)(add) = -40 +/- 2 cal.mol(-)(1) x K(-)(1); DeltaH(beta)(-CH)(-)(add) = -2.7 +/- 0.3 kcal x mol(-)(1) and DeltaS(beta)(-CH)(-)(add) = -6 +/- 1 cal x mol(-)(1) x K(-)(1)). Kinetic preferences for oxidative additions to 1 - intermolecular SiH and intramolecular CH - have been also quantified: Delta = -1.8 +/- 0.8 kcal x mol(-)(1) and Delta = -31 +/- 3 cal x mol(-)(1).K(-)(1); Delta = 16.4 +/- 0.6 kcal x mol(-)(1) and Delta = -13 +/- 6 cal x mol(-)(1).K(-)(1). The relative enthalpies of activation (-)(1) x K(-)(1)). Kinetic preferences for oxidative additions to 1 - intermolecular SiH and intramolecular CH - have been also quantified: Delta (H)SiH(add) = 1.8 +/- 0.8 kcal x mol(-)(1) and Delta S((SiH-add) =31+/- 3 cal x mol(-)(1) x K(-)(1); Delta S (SiH -add) = 16.4 +/- 0.6 kcal x mol(-)(1) and =Delta S (SiH -CH -add) =13+/- 6 cal x mol(-)(1) x K(-)(1). The relative enthalpies of activation are interpreted in terms of strong SiH sigma-complex formation - and much weaker CH coordination - in the transition state for oxidative addition.     

Effects of argon dilution on the translational and rotational temperatures of SiH in silane and disilane plasmas

The effects of argon dilution on the translational and rotational temperatures of SiH in both silane and disilane plasmas have been investigated using the imaging of radicals interacting with surfaces (IRIS) technique. The average rotational temperature of SiH determined from the SiH excitation spectra is approximately 500 K in both SiH(4)/Ar and Si(2)H(6)/Ar plasmas, with no obvious dependence on the fraction of argon dilution. Modeling of kinetic data yields average SiH translational temperatures of approximately 1000 K, with no dependence on the fraction of argon in the SiH(4)/Ar plasmas within the studied range. In the Si(2)H(6)/Ar plasmas, however, the translational temperature decreases from approximately 1000 to approximately 550 K as the Ar fraction in the plasma increases. Thus, at the highest Ar fractions, the translational and rotational temperatures are nearly identical, indicating that the SiH radicals are thermally equilibrated. The underlying chemistry and mechanisms of SiH energy equilibration in Ar-diluted plasmas are discussed.     

Caracterisation par spectrometries de vibration de poly(hydrogenosilmethylenes) et de poly(chlorosilmethylenes)

Infrared and Raman spectra of poly(hydrogenosilmethylenes) and of poly(chlorsosil-methylenes) are recorded and iterpreted. The results show that in the γ(SiH) region and also below 850 cm⁻¹ where the γ(CSiC) and the γ(SiCSi) stretching vibrations are found, it is possible to distinguish the different structural units of the derivatives, and to determine the chains lengths for n = 1–5. lf n= 1, two rotamers are observed for both Si H and Si Cl molecules.     

The role of multifunctional kinetics during early-stage silicon hydride pyrolysis: reactivity of Si2H2 isomers with SiH4 and Si2H6

Kinetic parameters for the dominant pathways during the addition of the four Si(2)H(2) isomers, i.e., trans-HSiSiH, SiSiH(2), Si(H)SiH, and Si(H(2))Si, to monosilane, SiH(4), and disilane, Si(2)H(6), have been calculated using G3//B3LYP, statistical thermodynamics, conventional and variational transition state theory, and internal rotation corrections. The direct addition products of the multifunctional Si(2)H(2) isomers were monofunctional substituted silylenes, hydrogen-bridged species, and silenes. During addition to monosilane and disilane, the SiSiH(2) isomer was found to be most reactive over the temperature range of 800 to 1200 K. Revised parameters for the Evans-Polanyi correlation and a representative pre-exponential factor for multifunctional silicon hydride addition and elimination reaction families under pyrolysis conditions were regressed from the reactions in this study. This revised kinetic correlation was found to capture the activation energies and rate coefficients better than the current literature methods.     

Reactivity of rhodium-triflate complexes with diphenylsilane: evidence for silylene intermediacy in stoichiometric and catalytic reactions

Addition of Ph2SiH2 to [Rh(iPr3P)2(OTf)] (1) yielded the thermally unstable RhIII adduct [Rh(iPr3P)2(OTf)(H)(SiPh2H)] (2), which decomposed to [Rh(iPr3P)2(H)2(OTf)] (3), liberating (unobserved) silylene. The silylene was trapped by 1, resulting in the RhI-silyl complex [Rh(iPr3P)2(SiPh2OTf)]. Complex 3 was converted to 2 by addition of diphenylsilane, providing a basis for a possible catalytic cycle. The last reaction did not involve a RhI intermediate, as shown by a labeling study. Complex 1 catalyzed the dehydrogenative coupling of Ph2SiH2 to Ph2HSi--SiHPh2. A mechanism involving a silylene intermediate in this catalytic cycle is proposed. The mechanism is supported by complete lack of catalysis in the case of the tertiary silanes Ph2MeSiH and PhMe2SiH, and by a study of individual steps of the catalytic cycle. The outcome of the reaction of Ph2SiH2 with styrene in the presence of 1 depends on the complex/substrate ratio; under stoichiometric conditions olefin hydrogenation prevailed over hydrosilylation, whereas with excess of substrates hydrosilylation prevailed. Catalytic hydrosilylation resulted in double addition giving Ph2Si(CH2CH2Ph)2. Mechanistic aspects of the reported processes are discussed, and a new hydrosilylation mechanism based on silylene intermediacy is proposed.     

Alkenylsilane structure effects on mononuclear and binuclear organotitanium-mediated ethylene polymerization: scope and mechanism of simultaneous polyolefin branch and functional group introduction

Alkenylsilanes of varying chain lengths are investigated as simultaneous chain-transfer agents and comonomers in organotitanium-mediated olefin polymerization processes. Ethylene polymerizations were carried out with activated CGCTiMe2 and EBICGCTi2Me4 (CGC = Me2Si(Me4C5)(NtBu); EBICGC = (mu-CH2CH2-3,3'){(eta5-indenyl)[1-Me2Si(tBuN)]}2) precatalysts in the presence of allylsilane, 3-butenylsilane, 5-hexenylsilane, and 7-octenylsilane. In the presence of these alkenylsilanes, high polymerization activities (up to 107 g of polymer/(mol of Ti.atm ethylene.h)), narrow product copolymer polydispersities, and substantial amounts of long-chain branching are observed. Regardless of Ti nuclearity, alkenylsilane incorporation levels follow the trend C8H15SiH3 < C6H11SiH3 approximately C4H7SiH3 < C3H5SiH3. Alkenylsilane comonomer incorporation levels are consistently higher for CGCTiMe2-mediated copolymerizations (up to 54%) in comparison with EBICGCTi2Me4-mediated copolymerizations (up to 32%). The long-chain branching levels as compared to the total branch content follow the trend C3H5SiH3 < C4H7SiH3 approximately C6H11SiH3 approximately C8H15SiH3, with gel permeation chromatography-multi-angle laser light scattering-derived branching ratios (gM) approaching 1.0 for C8H15SiH3. Time-dependent experiments indicate a linear increase of copolymer Mw with increasing polymerization reaction time. This process for producing long-chain branched polyolefins by coupling of an alpha-olefin with a chain-transfer agent in one comonomer is unprecedented. Under the conditions investigated, alkenylsilanes ranging from C3 to C8 are all efficient chain-transfer agents. Ti nuclearity significantly influences silanolytic chain-transfer processes, with the binuclear system exhibiting a sublinear relationship between Mn and [alkenylsilane](-1) for allylsilane and 3-butenylsilane, and a superlinear relationship between Mn and [alkenylsilane](-1) for 5-hexenylsilane and 7-octenylsilane. For the mononuclear Ti system, alkenylsilanes up to C6 exhibit a linear relationship between Mn and [alkenylsilane](-1), consistent with a simple silanolytic chain termination mechanism.     

Ab initio surface reaction energetics of SiH4 and Si2H6 on Si(001)-(2 x 2)

First-principles pseudopotential calculations, within a simple dynamically constrained scheme, have been performed to investigate the reaction of 0.25 ML coverage of SiH4 and Si2H6 with the Si(001)-(2 x 2) surface. The silane molecule (SiH4) is adsorbed on to the surface at a number of different sites (on dimer, interrow, or intrarow) with varying barrier heights. Two distinct structures, which are similar in energy, arise from the initial dissociative reaction SiH4-->SiH3(silyl) + H, where the dissociated species are adsorbed either on the same dimer components or on adjacent dimer components. Several further decays of silyl from SiH4 are presented in two separate regimes of high and low ambient hydrogen coverages. The decomposition of silyl can form two different bridging structures: an on top or an intrarow bridging structure in both of the two hydrogen coverage regimes. The disilane molecule (Si2H6) is also adsorbed upon this surface with varying energy barriers, resulting in a dissociation reaction where two SiH3 species are adsorbed on one dimer or in an adjacent dimer configuration. Plausible energy reaction paths for the above models are presented. The stability of the SiH2 species is also discussed.     

Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces

We present a detailed analysis of the interactions between growth precursors, SiH3 radicals, on surfaces of silicon thin films. The analysis is based on a synergistic combination of density functional theory calculations on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of film growth on surfaces of MD-generated hydrogenated amorphous silicon (a-Si:H) thin films. In particular, the authors find that two interacting growth precursors may either form disilane (Si2H6) and desorb from the surface, or disproportionate, resulting in the formation of a surface dihydride (adsorbed SiH2 species) and gas-phase silane (SiH4). The reaction barrier for disilane formation is found to be strongly dependent on the local chemical environment on the silicon surface and reduces (or vanishes) if one/both of the interacting precursors is/are in a "fast diffusing state," i.e., attached to fivefold coordinated surface Si atoms. Finally, activation energy barriers in excess of 1 eV are obtained for two chemisorbed (i.e., bonded to a fourfold coordinated surface Si atom) SiH3 radicals. Activation energy barriers for disproportionation follow the same tendency, though, in most cases, higher barriers are obtained compared to disilane formation reactions starting from the same initial configuration. MD simulations confirm that disilane formation and disproportionation reactions also occur on a-Si:H growth surfaces, preferentially in configurations where at least one of the SiH3 radicals is in a "diffusive state." Our results are in agreement with experimental observations and results of plasma process simulators showing that the primary source for disilane in low-power plasmas may be the substrate surface.     

Monobridged Si2H4

The rotational spectrum of a new monobridged isomer of Si(2)H(4), denoted here as H(2)Si(H)SiH, has been detected by Fourier transform microwave spectroscopy of a supersonic molecular beam through the discharge products of silane. On the basis of high-level coupled cluster theory, this isomer is calculated to lie only 7 kcalmol above disilene (H(2)SiSiH(2)), the most stable isomeric arrangement of Si(2)H(4), and to be fairly polar, with a calculated dipole moment of mu = 1.14 D. The rotational spectrum of H(2)Si(H)SiH exhibits closely spaced line doubling, characteristic of a molecule undergoing high-frequency inversion. Transition state calculations indicate that inversion probably occurs in two steps: migration of the bridged hydrogen atom to form silylsilylene, H(3)SiSiH, and then internal rotation of the SiH(3) group, followed by the reverse process. The potential energy surface for this type of inversion is quite shallow, with a barrier height of only 2-3 kcalmol. Searches for the rotational lines of silylsilylene, calculated to be of comparable stability to H(2)Si(H)SiH but about five times less polar (mu = 0.23 D), have also been undertaken, so far without success, even though strong lines of H(2)Si(H)SiH have been detected. The favorable energetics and high polarity of monobridged Si(2)H(4) with respect to either disilene or silylsilylene make it a plausible candidate for radioastronomical detection in sources such as IRC + 10216, where comparably large silicon molecules such as SiS, SiC(3), and SiC(4) have already been discovered.     

Octahedral adducts of dichlorosilane with substituted pyridines: synthesis, reactivity and a comparison of their structures and (29)si NMR chemical shifts

H(2)SiCl(2) and substituted pyridines (Rpy) form adducts of the type all-trans-SiH(2*)Cl(2)2 Rpy. Pyridines with substituents in the 4- (CH(3), C(2)H(5), H(2)C=CH, (CH(3))(3)C, (CH(3))(2)N) and 3-positions (Br) give the colourless solids 1 a-f. The reaction with pyrazine results in the first 1:2 adduct (2) of H(2)SiCl(2) with an electron-deficient heteroaromatic compound. Treatment of 1 d and 1 e with CHCl(3) yields the ionic complexes [SiH(2)(Rpy)(4)]Cl(2*)6 CHCl(3) (Rpy=4-methylpyridine (3 d) and 4-ethylpyridine (3 e)). All products are investigated by single-crystal X-ray diffraction and (29)Si CP/MAS NMR spectroscopy. The Si atoms are found to be situated on centres of symmetry (inversion, rotation), and the Si-N distances vary between 193.3 pm for 1 c (4-(dimethylamino)pyridine complex) and 197.3 pm for 2. Interestingly, the pyridine moieties are coplanar and nearly in an eclipsed position with respect to the SiH(2) units, except for the ethyl-substituted derivative 1 e, which shows a more staggered conformation in the solid state. Calculation of the energy profile for the rotation of one pyridine ring indicates two minima that are separated by only 1.2 kJ mol(-1) and a maximum barrier of 12.5 kJ mol(-1). The (29)Si NMR chemical shifts (delta(iso)) range from -145.2 to -152.2 ppm and correlate with the electron density at the Si atoms, in other words with the +I and +M effects of the substituents. Again, compound 1 e is an exception and shows the highest shielding. The bonding situation at the Si atoms and the (29)Si NMR tensor components are analysed by quantum chemical methods at the density functional theory level. The natural bond orbital analysis indicates polar covalent Si-H bonds and very polar Si-Cl bonds, with the highest bond polarisation being observed for the Si-N interaction, which must be considered a donor-acceptor interaction. An analysis of the topological properties of the electron distribution (AIM) suggests a Lewis structure, thereby supporting this bonding situation.     

First-principles theoretical analysis of silyl radical diffusion on silicon surfaces

We report results from a detailed analysis of the fundamental radical precursor diffusion processes on silicon surfaces and discuss their implications for the surface smoothness of hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of SiH(3) radical migration on the hydrogen-terminated Si(001)-(2 x 1) surface with molecular-dynamics (MD) simulations of SiH(3) radical precursor migration on surfaces of a-Si:H films. Our DFT calculations yield activation energies for SiH(3) migration that range from 0.18 to 0.89 eV depending on the local electronic environment on the Si(001)-(2 x 1):H surface. In particular, when no substantial surface relaxation (Si-Si bond breaking or formation) accompanies the hopping of the SiH(3) radical the activation barriers are highest, whereas hopping between nearest-neighbor overcoordinated surface Si atoms results in the lowest radical diffusion barrier of 0.18 eV; this low barrier is consistent with the activation barrier for SiH(3) migration through overcoordinated sites on the a-Si:H surface. Specifically, the analysis of the MD simulations of SiH(3) radical migration on a-Si:H surfaces yields an effective diffusion barrier of 0.16 eV, allowing for the rapid migration of the SiH(3) radical prior to its incorporation in surface valleys; rapid migration and subsequent incorporation constitute the two-step mechanism responsible for the smoothness of plasma deposited a-Si:H thin films.     

Chemical and electrical passivation of single-crystal silicon(100) surfaces through a two-step chlorination/alkylation process

Single-crystal Si(100) surfaces have been functionalized by using a two-step radical chlorination-Grignard (R = MgCl, R = CH3, C2H5, C4H9, C6H5, or CH2C6H5) alkylation method. After alkylation, no chlorine was detectable on the surface by X-ray photoelectron spectroscopy (XPS), and the C 1s region showed a silicon-induced peak shift indicative of a Si-C bond. The relative intensity of this peak decreased, as expected, as the steric bulk of the alkyl increased. Despite the lack of full alkyl termination of the atop sites of the Si(100) surface, functionalization significantly reduced the rate of surface oxidation in air compared to that of the H-terminated Si(100) surface, with alkylated surfaces forming less than half a monolayer of oxide after over one month of exposure to air. Studies of the charge-carrier lifetime with rf photoconductivity decay methods indicated a surface recombination velocity of <30 cm s(-1) for methylated surfaces, and <60 cm s(-1) for Si surfaces functionalized with the other alkyl groups evaluated. Soft X-ray photoelectron spectroscopic data indicated that the H-Si(100) surfaces were terminated by SiH, SiH2, and SiH3 species, whereas Cl-Si(100) surfaces were predominantly terminated by monochloro (SiCl and SiHCl) and dichloro (SiCl2 and SiHCl2) Si species. Methylation produced signals consistent with termination by Si-alkyl bonding arising from SiH(CH3)-, SiH2(CH3)-, and Si(CH3)2-type species.     

Group 14 Metal Terminal Phosphides: Correlating Structure with |J(MP)|

A series of heavier group 14 element, terminal phosphide complexes, M(BDI)(PR(2)) (M = Ge, Sn, Pb; BDI = CH{(CH(3))CN-2,6-iPr(2)C(6)H(3)}(2); R = Ph, Cy, SiMe(3)) have been synthesized. Two different conformations (endo and exo) are observed in the solid-state; the complexes with an endo conformation have a planar coordination geometry at phosphorus (M = Ge, Sn; R = SiMe(3)) whereas the complexes possessing an exo conformation have a pyramidal geometry at phosphorus. Solution-state NMR studies reveal through-space scalar coupling between the tin and the isopropyl groups on the N-aryl moiety of the BDI ligand, with endo and exo exhibiting different J(SnC) values. The magnitudes of the tin-phosphorus and lead-phosphorus coupling constants, |J(SnP)| and |J(PbP)|, differ significantly depending upon the hybridization of the phosphorus atom. For Sn(BDI)(P{SiMe(3)}(2)), |J(SnP)| is the largest reported in the literature, surpassing values attributed to compounds with tin-phosphorus multiple-bonds. Low temperature NMR studies of Pb(BDI)(P{SiMe(3)}(2)) show two species with vastly different |J(PbP)| values, interpreted as belonging to the endo and exo conformations, with sp(2)- and sp(3)-hybridized phosphorus, respectively.