准分子激光束的喇曼整形

受激喇曼散射可以将紫外准分子激光辐射频移到特定的近紫外和可见光波长.采用喇曼整形技术还可以获得衍射极限发散角的斯托克斯输出.本文研究了注入光束质量对喇曼整形的影响,并求得不同氢压力下的喇曼增益系数和饱和参量.     

准分子激光束的喇曼组束

受激喇曼散射可以将紫外准分子激光辐射频移到特定的近紫外或可见光波长,采用喇曼整形技术可以改善斯托克斯光的光束质量,本文报道喇曼组束提高喇曼整形效率的实验结果.     

Interaction of 157-nm excimer laser radiation with fluorocarbon polymers

Two important fluoropolymers, polytetrafluoroethylene [PTFE—(C₂F₄)_N] and polyvinylidene fluoride [PVDF—(C₂H₂F₂)_N], respond to 157-nm laser radiation in dramatically different ways. At fluences sufficient to produce rapid etching, the volatile emissions from PTFE are dominated by (CF₂)_N fragments. The velocities of the fastest (CF₂)_N molecules at each mass are consistent with kinetic energies on the order of an electron volt—and change little with fluence. This fluence independence suggests that the velocities are not affected by collisions after emission. To account for the high kinetic energies and the unusual, half-monomer mass distribution, we propose that these fragments are produced by photochemical scission of the polymer backbone, and that a fraction of the excitation energy is delivered to each fragment as kinetic energy. In contrast, the principle neutral species from PVDF is HF. HF is produced by the scission of C-F bonds, followed by chemical reactions with nearby hydrogen. This process is accompanied by the conjugation of backbone C-C bonds. The photochemical cleavage of C-C bonds in PTFE and C-F bonds in PVDF is consistent with the lower C-C bond energy of PTFE.     

Efficient Raman conversion of XeCl excimer laser radiation in Ba vapour

Stimulated electronic Raman scattering in Ba vapour is used to efficiently convert the output of a XeCl excimer laser (308 nm) to the blue region (475 nm). Photon conversion efficiencies of up to 20% and output energies in the blue greater than 5 mJ are obtained. The multi-line structure of the XeCl laser emission is reproduced in the generated Stokes spectrum.     

Generation of high peak power excimer laser radiation by pulse shortening

Techniques for shortening the pulses of a commercial oscillator-amplifier excimer laser have been investigated. By a combination of a H₂-Raman cell and a saturable absorber dye jet the oscillator pulses are shortened from about 25 ns to typically 1.5 ns. Upon amplification pulses around 3.5 ns with peak powers of more than 100 MW for KrF (248 nm) and 25 MW for XeCl (308 nm) are obtained.     

Transformation of laser radiation by Gaussian apertures

The transformation of simple Gaussian light beams by lenses with a complex focal length is investigated in an approximation of paraxial optics. The results obtained are compared with the corresponding results of geometric optics into which they go over in limiting cases. A. N. Sevchenko Scientific-Research Institute of Physical Problems, 7, Kurchatov St., Minsk, 220064, Belarus. Translated, from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 471–478, July–August, 1997.     

Simulation of composition modification in ZnSe by nanosecond radiation of excimer laser

A numerical simulation of the composition modification induced in ZnSe by nanosecond irradiation of the KrF excimer laser (λ = 248 nm, τ = 20 ns) has been carried out. Intensive evaporation of components has shown to results in the material surface cooling and forming a nonmonotone temperature profile with maximum temperature in semiconductor volume at the distance of ∼6 nm from the surface. As a result of evaporation and diffusion of components formation of the near-surface layer with nonstoichiometric composition takes place and enrichment of selenium reaches maximum value not on the surface, but in the semiconductor volume.     

高重复率XeCl准分子激光器的放电特性

本文报道紫外预电离放电泵浦的高重复率XeCl准分子激光器的放电特性,分析了放电参数的改变对放电过程的影响.最佳转换效率达2.2%.     

Ablated gratings on borosilicate glass by 193-nm excimer laser radiation

Relief gratings of 500-nm period have been fabricated on Er/Yb-doped borosilicate glass substrates by laser ablation through the use of an excimer laser, at a wavelength of 193-nm, and a modified Mach-Zehnder interferometer. The grating fabrication process has been quantified by the use of diffraction efficiency measurements and atomic force microscope microscans and is related to the incident energy density.     

New aspects of micromachining and microlithography using 157-nm excimer laser radiation

The use of F₂ excimer laser sources, emitting at 157 nm, constitutes a new promising tool for scientific, industrial and lithography applications. The 157-nm laser emission enables high-resolution processes and the high photon energy offers the unique possiblity of photoionizing molecules in a single step. Therefore a lower fragmentation or thermal loading takes place. The 157-nm radiation will enable fundamental research and development for deep UV (DUV) high-resolution optical microlithography in the manufacturing of integrated circuits. This is the next step from the technology of ArF lasers at 193 nm. Furthermore, benefits are expected for key technologies requiring high-resolution processing and the micromachining of tough materials like Teflon or fused silica for micro-optics fabrication. Such applications require F₂ excimer laser sources with high performance, reliability and efficiency. The world of nanotechnology is just beginning to reveal its potential.     

Transformation of laser radiation by centered systems of lenses

The general properties of transforming the parameters of simple Gaussian beams by systems of centered lenses are investigated in the general case with arbitrary complex focal lengths. Analytical and graphic methods for solving the problems of this transformation are proposed. A. N. Sevchenko Research Institute of Applied Physical Problems, 7, Kurchatov St., Minsk, 220064, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 350–359, May–June, 1998.     

Optical characteristics of cylindrical exciplex and excimer lamps excited by microwave radiation

The object of investigation is the optical characteristics of Br₂, Cl₂, XeBr, and XeCl excilamps excited by microwave radiation. The power of the microwave discharge is determined from a pressure jump in the bulb of the lamp. Conditions for the effective generation of XeCl* and XeBr* exciplexes in cylindrical lamps are found. The efficiency of generation of these exciplexes equals 7.2 and 7.8%, respectively.     

High-power excimer laser systems

Two-high power excimer laser systems with square (25 × 25 cm) and circular (with a diameter of 40 cm) cross sections of the output laser beam are described. The first (second) system consists of four (five) excimer lasers. The experimental results on the generation of the high-quality high-power laser pulses are presented. Laser beams with a pulse duration of 1–250 ns, a divergence of 0.01 mrad, a spectral line width of 0.01 cm⁻¹, and a pulse energy of up to 330 J are obtained. Original Text ? Astro, Ltd., 2006.     

Statistical characteristics of the spatial structure of scattered radiation

Experimental results are given on the statistical characteristics of the spatial structure of scattered radiation as a function of the optical thickness and the number of scatterers. It is shown that the dispersion of the intensity fluctuations decreases with increase in the particle concentration in the scattering volume, and the correlation radius increases with increase in optical thickness. The dependence of the intensity-fluctuation dispersion on the scattering angle is obtained.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 44–47, December, 1978.Finally, it remains to thank Yu. A. Larionov, the head engineer of the Siberian Physicotechnical Institute, for assistance in the analysis of the experimental data.     

Output and picosecond amplification characteristics of an efficient and high-power discharge excimer laser

Improvements in output pulse energy and efficiency of a conventional capacitor-transfer-type discharge excimer laser with automatic preionization have been achieved by extending the discharge volume and resulting moderate pumping of the active medium. The discharge laser produces a pulse energy of more than 1 J for XeCl, KrF, and ArF lasers in square beams of about 2×2 cm², and the maximum overall efficiency observed is 2.9% for XeCl, 3.2% for KrF and 1.8% for ArF. The laser device has been involved in a picosecond ( 32 ps) XeCl laser amplification system, and was operated as an amplifier at a repetitive frequency of 10 Hz. Saturation fluence for XeCl laser was measured to be 1.4 mJ/cm², and the picosecond pulse energy of 40 mJ was extracted from the amplifier.On leave from Ebara Corp., 6-6-7, Ginza, Chuo-ku, Tokyo 104, JapanOn leave from Mitsubishi Heavy Industries, LTD., 4-6-22, Kan-on shinmachi, Nishi-ku, Hiroshima 733, Japan     

Direct high-resolution excimer laser photoetching

Water behaves as a protonic semiconductor. Properties of a diode and a multivibrator based on the protonicp-n junctions were studied.     

The self-injected XeCl excimer laser

We present experimental and modelling results of the first self-injected excimer laser. The intracavity losses of a XeCl oscillator are properly modulated by a Pockels cell allowing generation, amplification and extraction of short laser pulses with selectable duration in the range of 1–12 ns, tailored temporal profile and peak power increment up to a factor of three. Longer output laser pulses, up to 100 ns, can be obtained by slicing the intracavity laser radiation without peak power increment. Laser output peak powers in excess of 2 MW have been obtained, with remarkable reproducibility characteristics.ENEA fellow