Neutralizing a high-aperture metal-ion beam

It is found that secondary electrons ejected by the ions from the collector are responsible for neutralizing 300 sec pulses of wide-aperture ion beams (about 100–300 cm²) formed by various metals and having current densities ji of about 10^–2 A/cm² and energy _i 100 keV. A negative potential _ee=–500 V applied to the extracting electrode relative to the grounded collector improves substantially not only the beam neutralization in the transport section but also the ion generation efficiency in the accelerating gap.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 53–56, April, 1990.     

Exponential temperature dependence and low-bias conductance anomaly in transport through Langmuir–Blodgett monolayer devices

Current–voltage characteristics are reported as a function of temperature (2–300 K) for 2.8-nm-thick eicosanoic acid (C₂₀) Langmuir–Blodgett organic monolayers sandwiched between planar platinum electrodes of area 5–200 m². An exponential temperature dependence observed between 60 and 300 K does not fit standard activated conduction, but can be described by thermionic field emission through a thin 0.1-eV barrier. A second model of tunneling through a vibrationally excited harmonic oscillator barrier also fits the data. A broad 200 meV dip in conductance at V=0 suggests strong inelastic tunneling, supporting the vibrational model. PACS 73.40.Gk; 68.47.Pe; 73.63.-b     

Magnetic phase transitions in 187-01187-01187-01

We report SR measurements of Pr₂CuO_4– and (Pr_2–xCe_x)CuO_4– single crystals in the temperature range 4.2K300K. Two spin reorientation phase transitions were observed, although neutron scattering experiment could not detect these phase transitions. These allow us to conclude that magnetic moments of the Cu atoms order in an antiferromagnetic noncollinear cross like structure including a hidden canting spin arrangement.     

Onset of superconductivity at 107K in YBa2Cu3O7 − δ at high pressure

Electrical resistivity measurements under pressure have been carried out on the high-temperature superconductor YBa₂Cu₃O_{7 –} as a function of temperature T between 1 and 300 K at various pressures between 8 kbar and 149 kbar. The superconducting transition temperature T_c increases almost linearly with pressure at the rate dT_c/dP - 0.13 K/kbar. The onset of T_c, defined as the temperature at which(T) drops to 90% of its extrapolated normal state value, increases from 95 K at 8 kbar to 107 K at 149 kbar. These results suggest that higher pressures will yield yet higher values of T_c.     

Pb1−x Fe x films prepared by vapor condensation

ZF, LF and TF SR experiments with antiferromagnetic (AF) ceramical samples La_2–x Sr _x CuO_4–y have been performed in the temperature range 10–300 K. Zero field muon spin polarization functions obtained below the Neel temperature clearly show a nonzero initial precession phase-–0.35 rad. We propose an explanation based on existence of the dynamical magnetic fields on the muon.We thank Drs. A.G. Chistov and A.M. Brjazkalo from RSC Kurchatov Institute for the preparation the #2 La₂CuO_4–y sample.     

Electrical properties of p-type ZnGeP2 irradiated by H+ ions

The properties of p-type ZnGeP₂ [p₀=(5–10)·10¹⁰ cm^–3, ₀=(2–5)·10^–7 (·cm)^–1], irradiated with H⁺ ions [E=5 MeV, T_irr=300 K, D=(1·10¹²–1.7·10¹⁶) cm^–2] are studied. An increase in the resistivity (to gr_max - 5·10¹¹ ·cm) and subsequent reduction in for large currents of H⁺ ions ( - 9·10⁸ ·cm for D - 1.7·10¹⁶ cm^–2), is observed in irradiated crystals. The resistivity of irradiated p-type ZnGeP₂ is found to be very sensitive to hydrostatic pressure [(4–5)·10^–5 bar^–1]. The annealing of radiation defects in the temperature interval (20–600) °C is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 91–93, October, 1991.     

QCD corrections to the reaction PP → γγ + X

It is shown that QCD corrections taking into account both collinear and infrared gluons attain a magnitude of the order of 100% in the reaction PP r + X. The value of the K factor is calculated: K1.5–1.6 withk _T 10 (GeV/sec)². Perturbation theory is applicable, since the large constants are exponential and are practically completely taken into account by the K factor.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 82–87, July, 1985.The authors thank A. V. Efremov, A. V. Kadyushkin, and D. V. Shirkov for discussions of the results obtained.     

Temperature dependence of the effective work function for the BaO - W system

The temperature dependence of the work function has been examined for the BaO-W system for degrees of coating less than 1 and about 1 in the range 700–1400 °K; it is found that a monomolecular film gives a negative sign of this coefficient in this temperature range ( /T 10^–4 –10^–3 eV/deg). At 1000–1200 °K, the temperature coefficient is almost zero, while at 1200–1400 °K there is a positive value. If the covering is less than monomolecular, the sign is positive throughout the entire temperature range (/T 10^–4 eV/deg).Deceased.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 9, pp. 65–70, September, 1971.We are indebted to N. I. Éngovatova for direct assistance with the measurements, and to V. Rumyantsev for advice.     

μ+SR study of Ising spin-glass Fe0.5Mn0.5TiO3

A typical Ising spin-glass Fe_0.5Mn_0.5TiO₃ has been investigated by ⁺ spin relaxation measurements. It is found that the local magnetic fields at the ⁺ stopping sites appear at a temperature twice as high asT _SG. The directional distribution of the local magnetic fields is nearly isotropic, indicating the existence of the transverse spin components. It is clearly demonstrated that the spins fluctuate belowT _SG and even at 4 K. Taking into account the results obtained by other methods, the main part of the fluctuations is inferred to be due to the transverse spin components and the fluctuation limes at 4 K are driven into a range between 10^–5 and 10^–7 s.     

Rapid increase in the delay time for the breakdown of gas-filled gaps in high electric fields

An experimental study is reported of the delay-time statistics for electrical breakdown in air in intense electric fields E = 100–200 kV/cm. The dependence of the statistical delay time t_st for the breakdown on the gap width is obtained for various fields E. With E = 100 kV/cm and with an air pressure of p = 1 atm, the delay time is 20 nsec and depends weakly on in the range 5 = 3–10 mm. As the gap width is reduced from 3 to 2 mm, t_st increases sharply, reaching 3000 nsec. The gap width at which the sharp increase in t_st sets in decreases with increasing E. The gap-width dependence of t_st has the same nature at different pressures. The minimum delay time has been measured to be 8 nsec.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 12, No. 2, pp. 36–39, February, 1969.     

Evolution of the temperature field on an absorber irradiated by an intense ion beam

Using the small parameter method, a numerical solution is found for the nonlinear thermal conductivity equation describing evolution of the temperature field in an absorber after completion of a radiation pulse. High speed (10⁶ K/sec) heating of the surface layers over 1·10^–5 sec is observed. Absorber cooling parameters are obtained as a function of time and distance from the irradiated surface.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 89–93, May, 1986.     

Ferromagnetic resonance and magnetic crystallographic anisotropy of monocrystalline lithium ferrite films

The crystallographic anisotropy constant K₁ of monociystalline lithium ferrite films was measured by the methods of ferromagnetic resonance and rotational moments. The presence of uniaxial anisotropy in the plane of a film with the constant K_u 10₃ erg · cm^–3 is established experimentally. The nature of the uniaxial anisotropy is explained by the anisotropy of the stresses in the plane of the film, a formula is obtained to compute the angle of deflection of the easy magnetization axis from the crystallographic direction. An estimate is made of the difference in the stresses along the axes (_x–_z) 10¹⁰ dyne · cm^–2.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 16, No. 9, pp. 86–89, September, 1973.     

Unstable neutrinos can do it!

We present a cosmological scenario with unstable neutrinos which decay into a light neutrino and a relativistic boson. Theoretical and observational constraints severely narrow the values of mass and of lifetime of neutrinos. However, within this range, we can construct models with (i) = 1, (ii) age of the universe 13 billion years (b.y.) and (iii)h ₀ –0.5. The dynamical modeling shows that (a) the initial condensates of primordial _L are disrupted by the decay, lowering their masses to acceptable values ~10¹² M, (b) the relativistic boson contributes nearly 0.25 to, and (c) there emerge two prominent scales in dark matter distribution, one with a mass ~10¹² M distributed over 200 kpc around galaxies and another component with density 10^–27 g cm^–3 distributed over 1 Mpc. The model agrees with observations at all scales.This essay received an honorable mention from the Gravity Research Foundation for 1986-Ed.     

Influence of localized states in a semiconducting film of critical thickness on the electrical properties of thinfilm ms' is structures

The current-voltage and high-frequency capacitance-voltage (C-V) characteristics have been used to investigate the electrical properties of thin Ga₂Ses films in Me-Ga₂Se₃-Si structures (n and p type). The features of the high-frequency C-V dependences of the structures based on p-type Si are explained in the framework of a model of the MS' IS structure with donor type centers in the semiconducting S'film (the thickness of the S' film is comparable with the generalized screening length). It is shown that in the investigated structures the charge transport mechanism is due to ionization of volume centers (the activation energy of a deep donor center is 0.72 eV) in the Ga₂Se₃ film, the mechanism being enhanced by an electric field. Analysis of the high-frequency C-V characteristics showed that the majority carriers in the Ga₂Se₃ films are electrons with concentration 10¹² cm^–3; the concentration of the deep donor centers is 5·10¹⁶ cm^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 83–88, January, 1981.     

Self-consistent calculation of statics and dynamics of the roughening transition

Statics and dynamics of the modified kinetic discrete Gaussian model are treated selfconsistently using a Gaussian probability assumption. A non-trivial roughening temperatureT _R is found in exactly two dimensions only. The free energyF, the correlation length and the interface roughness h ² are found to behave—lnFlnh ²(T _R –T)^–1 for temperaturesT approachingT _R from below. The linear relaxation rate of the order parameter is found to be proportional to ^–2. As a model for crystal growth, the growth rate depends linearly upon the chemical potential difference aboveT _R , shows a metastable regime belowT _R with a spinodal limit of metastability _c , beyond which oscillatory growth starts. The critical behavior of _c is found to be ln _c –(T _R –T)^–1+O(ln (T _R –T)).     

Determination of the strain potential constant by means of the p-InSb photoconductivity spectra under uniaxial compression

The influence of uniaxial pressure (0 < P < 2600 kg/cm2) on the intrinsic photoconductivity (PC) spectrum of p-InSb at 93 and 15°K is investigated. At 77°K the carrier concentration and mobility in the specimens were, respectively, (1.4–3.2)·10¹⁴ cm^–3 and 7000 cm²/V. sec. It is established that the maximum in the PC(E_m) spectra under compression is shifted towards higher energies. In the low-compression range E_m/P=5·10^–6eV·cm²/kg, while E_m/P=1·10^–6eV·cm²/kg for P > 1000 kg/cm². It is shown that the shift of the maximum of the intrinsic PC spectra with pressure is due to the growC;th in the forbidden bandwidth (E_g), and the change in parameters characterizing carrier diffusion in the specimen bulk (the diffusion coefficient, lifetime, surface recombination velocity) plays no part. The change in E_m/P with pressure is explained by the influence of valence band splitting. The deformation potential constants of the valence band |b|=(1.7±0.3) eV and |d|=(4.4±0.8)eV are calculated on the basis of a comparison between experimentally obtained data and theoretical results.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 159–162, February, 1976.     

Note on the interfacial tension of phase-separated polymer solutions

Earlier theoretical calculations of the interfacial tension of phase-separated polymer solutions as a function of the degree of polymerizationN and the temperatureT, based partly on the mean-field approximation, had led toN ^–1/4(1–T/T _c )^3/2 for fixedN1 andT approaching the critical solution temperatureT _c It is here remarked that the scaling procedure of de Gennes then modifies this toN ^–0.37(1–T/T _c )^1.26, which is in close accord with the experimentalN ^–0.44(1–T/T _c )^1.26. The simplest mean-field picture yieldsN ^–1/2(1–T/T _c )^3/2.     

Self interstitial trapping at Hf impurities in Niobium

After electron irradiation at 15 K of Niobium doped with¹⁸¹Hf the trapping of defects at the Hf impurities was observed by means of the perturbed angular correlation method. The results are interpreted as the formation of Hf-Nb mixed dumbbells which are formed at 5 K and are stable up to 80 K.     

Spin fluctuations in both the ordered and paramagnetic phases of MnSi! MnSi a heavy Fermi liquid?

Polarised neutrons and polarisation analysis have been used to determine the diffuse magnetic scattering from MnSi as a function of temperature. Measurements at 50 K (1.72T _c) and 100 K (3.45T _c) in the paramagnetic phase confirmed the presence of strong spatial correlations previously reported at 300 K (10T _c) and 580 K (20T _c). The spatial correlations between regions of spin density separated by 12 Å are of a ferromagnetic nature and determine the static susceptibility. Integration of the paramagnetic response over an inverse atomic volume yields a moment per manganese atom of 1.2 _B , a value considerably larger than the 0.4 _B observed in Bragg scattering and magnetisation measurements at 4.2 K. Measurements made at 11 K in the ordered magnetic phase reveal strong diffuse scattering corresponding to 0.8 _B per Mn atom. The increase in the diffuse scattering observed in the paramagnetic phase corresponds to the passage of the Bragg component into the background.The presence of significant scattering in the ordered phase and the very unusual wave vector dependence of the diffuse scattering observed at 11 K has been interpreted assuming MnSi to be a heavy Fermi liquid. Furthermore we believe these measurements give the first direct observation of the exchange hole.     

Local magnetic properties of ultrathin ferromagnetic fcc-Fe-films on Cu(001)

Conversion electron Mössbayer spectroscopy (CEMS) on three monolayers (ML) thick metastable fcc-Fe(001) films grown epitaxially on a Cu(001) substrate under different conditions shows that these films are characterized by a distributionP(B _hf) of magnetic hyperfine fieldsB _hf. The vast majority of⁵⁷Fe nuclei experience relatively large hyperfine fields at low temperature. The temperature dependence of the most probable fieldB _peak was found to follow aT ^3/2 spin-wave law below 300 K. It is shown from the relative line intensities that preferential Fe spin orientation perpendicular to the film plane exists in films grown at 120 K, while preferential in-plane spin orientation is found for a growth temperature of 300 K. Coating a low-temperature grown Fe film by 2 ML of Cu(001) drastically reduces the hyperfine field, in contrast to the case of room-temperature grown Cu-coated films.Dedicated to Professor Ulrich Gonser on the occasion of his 70th birthday