Structural properties and diffusion processes of the Cu3Au (0 0 1) surface

The surface relaxation and surface energy of both the mixed AuCu and pure Cu terminated Cu₃Au (0 0 1) surfaces are simulated and calculated by using the modified analytical embedded-atom method. We find that the mixed AuCu termination is energetically preferred over the pure Cu termination thereby the mono-vacancy diffusion is also investigated in the topmost few layers of the mixed AuCu terminated Cu₃Au (0 0 1) surface. In the mixed AuCu terminated surface the relaxed Au atoms are raised above Cu atoms for 0.13 Å in the topmost layer. All the surface atoms displace outwards, this effect occurs in the first three layers and changes the first two inter-layer spacing. For mono-vacancy migration in the first layer, the migration energies of Au and Cu mono-vacancy via two-type in-plane displace: the nearest neighbor jump (NNJ) and the second nearest neighbor jump (2NNJ), are calculated and the results show that the NNJ requires a much lower energy than 2NNJ. For the evolution of the energy requirements for successive nearest neighbor jumps (SNNJ) along three different paths: circularity, zigzag and beeline, we find that the circularity path is preferred over the other two paths due to its minimum energy barriers and final energies. In the second layer, the NN jumps in intra- and inter-layer of the Cu mono-vacancy are investigated. The calculated energy barriers and final energies show that the vacancy prefer jump up to a proximate Cu site. This replacement between the Cu vacancy in the second layer and Cu atom in the first layer is remunerative for the Au atoms enrichment in the topmost layer.     

FCC金属空位的MAEAM理论研究

应用涉及更远邻原子的改进分析型嵌入原子方法（MAEAM）计算了面心立方（fcc）金属（Ag,Al,Au,Cu,Ir,Ni,Pd,Pt,Rh）的空位性能。在MAEAM计算中,考虑了远邻原子相互作用和单空位迁移能,对两体势进行了坚挺处理,并采用新的截尾函数和加强光滑连接条件对两体势作了截尾处理。同时为了更好的符合面心立方晶体的结合能、弹性常数和平衡条件,调整了多体势的模型常数。未弛豫空位性能计算中考虑了两体势的截尾距离和电子密度分布函数的截尾距离之间近邻原子的作用以及双空位迁移途径周围的原子非对称分布。结果与其它方法计算结果基本一致,但更加接近实验值。对双空位迁移能的计算结果有利地说明了fcc金属双空位5种迁移途径的扩散机制。     

First-principles calculation of defect formation energy in chalcopyrite-type CuInSe2, CuGaSe2 and CuAlSe2

In order to quantitatively evaluate the formation energies of Cu, In/Ga/Al and Se vacancies in chalcopyrite-type CuInSe₂ (CIS), CuGaSe₂ (CGS) and CuAlSe₂ (CAS), first-principles pseudopotential calculations using plane-wave basis functions were performed. All calculations were performed using a supercell with 64 atoms, which was eight times greater than the number of atoms in a primitive cell with eight atoms. The formation energies of point defects were calculated as a function of the atomic chemical potentials of constituent elements. Atomic arrangements around the vacancy were optimized allowing relaxation of the first- and second-nearest-neighbor atoms of the vacancy. The obtained results were as follows: (1) the formation energy of Cu vacancy was smaller than those of the other vacancies in CIS, CGS and CAS. Under the Cu-poor condition, the formation energy of Cu vacancy in CIS was lowest among those in them; (2) the formation energy of Se vacancy in CIS was relatively lower than those in CGS and CAS; (3) the formation energy of (2V_Cu+In_Cu) pair in CIS was greatly dependent on the chemical potential of the constituent elements, i.e. Cu, In and Se. On the other hand, the formation energies of (2V_Cu+Ga_Cu) in CGS and (2V_Cu+Al_Cu) in CAS were not largely dependent on the chemical potential of the constituent elements. Under the Cu-poor condition, the formation energy of (2V_Cu+In_Cu) pair in CIS was much lower than those of (2V_Cu+Ga_Cu) in CGS and (2V_Cu+Al_Cu) in CAS.     

Point-defect properties of and sputtering events in the {001} surfaces of Ni3Al I. Surface and point-defect properties

Constant-area and fully relaxed molecular dynamics methods are employed to study the properties of the surface and point defects at and near {001} surfaces of bulk and thin-film Ni, Al and Ni₃Al respectively. The surface tension is larger than the surface energy for all {001} surfaces considered in the sequence: Al (1005?mJ?m^?2)<?Ni₃Al (mixed Ni–Al plane outermost, 1725?mJ?m^?2)<?Ni₃Al (all-Ni-atoms plane outermost, 1969?mJ?m^?2)<?Ni (1993?mJ?m^?2). For a surface of bulk Ni₃Al crystal with a Ni–Al mixed plane outermost, Al atoms stand out by 0.0679?Å compared with the surface Ni atoms and, for the all-Ni-atoms surface, Al atoms in the second layer stand out by 0.0205?Å compared with Ni atoms in the same layer. Vacancy formation energies are about half the bulk values in the first layer and reach a maximum in the second layer where the atomic energy is close to the bulk value but the change in embedding energy of neighbouring atoms before and after vacancy formation is greater than that in the bulk. Both the vacancy formation energy and the surface tension suggest that the fourth layer is in a bulk state for all the surfaces. The formation energy of adatoms, antisite defects and point-defect pairs at and near {001} surfaces of Ni₃Al are also given.     

Mössbauer effect study of fine atomic structure of Fe50Al40Ni10 powders

In the present paper, we discuss the local atomic environment of Fe atoms in the mechanically alloyed Fe₅₀Al₄₀Ni₁₀ powders on the basis of hyperfine data estimated from ⁵⁷Fe Mössbauer spectra. B_hf decreases with increasing milling time due to the diffusion of Al and/or Ni into Fe grains. Nickel atoms did not diffuse inside the first coordination sphere of Fe and if the diffusion takes place the number is not more than one atom. Analyses of P(B_hf), indicate that the high hyperfine field values ranging from 30 to 33 T have to be partially attributed to Fe crystalline nanograins and the presence of the defects in them, the hyperfine field values ranging from 15 to 30 T can be associated to the nanocrystalline bcc Fe(Al, Ni) solid solution while the low hyperfine field values (<15 T) result from Fe atoms located in the disordered grain boundaries.     

合金元素Zr韧化不同计量比Ni3Al合金的微观机制

利用正电子湮没技术（PAT）测量了不同化学计量比二元Ni3₃Al合金及不同Zr含 量Ni3₃Al合金的正电子寿命谱，并估算了合金基体和晶界缺陷处的自由电子密度.结果表明，二元Ni77₇₇Al23₂₃合金的基体和缺陷态的自由电子密度都比二元 Ni74₇₄Al26₂₆合金的高. Ni3₃Al合金晶界缺陷处开空间大于Ni空位或Al空位的开空间，晶界缺 陷处的自 关键词： 3Al合金')" href="#">Ni3₃Al合金 微观机制 自由电子密度 韧化     

铬和镍的添加对Fe3Al合金力学性能影响的DFT研究

利用第一原理研究了过渡金属元素 Cr 或 Ni 在 Fe₃Al合金中的优先占位行为及其合金化效应. 计算结果表明: Cr 或 Ni 的取代有助于Fe₃Al 合金体系更稳定, Cr 优先占据 Fe_I 位, Ni 优先占据 Fe_II位. Fe₂NiAl-II 具有最小的剪切模量G, 杨氏模量E和G/B值, 因此Fe₂NiAl-II合金的韧性、延展性最佳. 态密度和电荷密度图表明, 过渡金属元素的取代提高了它们与近邻基体原子之间的相互作用, 削弱了Al和Fe的相互作用.     

First principles study of the diffusional phenomena across the clean and Re-doped γ-Ni/γ'-Ni_3Al interface of Ni-based single crystal superalloy

Density functional theory calculations in conjunction with the climbing images nudged elastic band method are conducted to study the diffusion phenomena of the Ni-based single crystal superalloys.We focus our attention on the diffusion processes of the Ni and Al atoms in the γ and γ ' phases along the direction perpendicular to the interface.The diffusion mechanisms and the expressions of the diffusion coefficients are presented.The vacancy formation energies,the migration energies,and the activation energies for the diffusing Ni and Al atoms are estimated,and these quantities display the expected and clear transition zones in the vicinity of the interface of about 3–7(002) layers.The local density-of-states profiles of atoms in each(002) layer in the γ and γ ' phases and the partial density-of-states curves of Re and some of its nearest-neighbor atoms are also presented to explore the electronic effect of the diffusion behavior.     

Density functional theory investigation of S2 in KCl: evidence for the existence of a di-vacancy site

Electron paramagnetic resonance experiments have shown that, depending on the doping procedure, two different S₂⁻ centers may coexist in KCl. These centers have the ²B_2g and the ²B_3g ground state, respectively. As no experimental ligand hyperfine data are available, it could not be determined whether the S₂⁻ molecular ion replaces a single halide ion (mono-vacancy site) or two nearest neighbor halide ions (di-vacancy site). Also, other defect models could a priory be considered. In this work, cluster in vacuo density functional theory calculations of the g and ³³S hyperfine tensors show that the S₂⁻ ion at a mono-vacancy site has the ²B_2g ground state, whereas S₂⁻ in a di-vacancy exhibits a ²B_3g ground state. For the latter center, the possibility of charge compensation by a cation vacancy is also considered. The calculations indicate that a possible vacancy is not in the direct vicinity (nearest or next-nearest neighbor) of the S₂⁻ ion.     

Theoretical study of CO and Pb adsorption on the Ni(1 1 1) and Ni3Al(1 1 1) surfaces

Adsorption of CO molecules and Pb atoms on the Ni(1 1 1) and Ni₃Al(1 1 1) substrates is studied theoretically within an ab initio density-functional-theory approach. Stable adsorption sites and the corresponding adsorption energies are first determined for stoichiometric surfaces. The three-fold hollow sites (fcc for Pb and hcp for CO) are found most favourable on both substrates. Next, the effect of surface alloying by a substitution of selected topmost substrate atoms by Pb or Ni atoms on the adsorption characteristics is investigated. When the surface Al atoms of the Ni₃Al(1 1 1) substrate are replaced by Ni atoms, the Pb and CO adsorption energies approach those for a pure Ni(1 1 1) substrate. The Pb alloying has a more substantial effect. On the Ni₃Al(1 1 1) substrate, it reduces considerably adsorption energy of CO. On the Ni(1 1 1) substrate, CO binding strengthens slightly upon the formation of the Ni(1 1 1)p(2×2)-Pb surface alloy, whereas it weakens drastically when the Ni(1 1 1)-Pb surface alloy is formed.     

X-ray photoelectron spectroscopy and magnetism of Mn1−xAlxNi alloys

X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), magnetization and magnetic susceptibility of Mn_1−xAl_xNi alloys are reported. A change in the crystallographic structure takes place around x=0.4 from CuAuI to CsCl (B2) structure type. For x0.5 a mixed B2+L2₁ state exists which incorporates antiferromagnetic (B2) and ferromagnetic (L2₁) parts. A direct evidence for the existence of local moments on Mn sites in Mn_1-xAl_xNi alloys is given by the exchange splitting of XPS Mn 3s and Mn 2p3/2 core levels. The gradual filling of the Ni 3d band as the Al concentration increases can be explained by the hybridization of the Ni 3d band and Al 3sp states.     

Ni/Ni3Al interface: A density functional theory study

The optimal geometries, mechanical and thermal properties, and electronic structures of the three low index (0 0 1), (1 1 0), (1 1 1) Ni/Ni₃Al thin film were studied using first principle calculations. Simulated results indicated that Ni and Al atoms in γ^′ phase preferred to place in the hollow site of Ni atoms in γ phase. In hollow site models, electronic states affected by interface localize within 2 atomic layers. While the top site model, electronic states localize within 3 atomic layers. It is also found that hollow site (1 1 0) interface has the best mechanical properties. Hollow site (0 0 1) interface is the most easily formed interface, which has the best thermodynamic properties.     

Nanocrystalline FeAl intermetallics obtained in mechanically alloyed Fe50Al40Ni10 powder

B2-Fe₄₇Al₅₃ intermetallics has been produced by mechanical alloying in a planetary ball mill, using elemental Fe, Al and Ni powder mixture. The microstructural and magnetic properties of the mechanically alloyed Fe₅₀Al₄₀Ni₁₀ powdered samples were investigated by X-ray diffraction and ⁵⁷Fe Mössbauer spectrometry at 300 and 77 K. As resulted from the X-ray diffraction studies, the ordered B2 structure was formed in the Fe₅₀Al₄₀Ni₁₀ powder, together with the bcc α_i-Fe(Al, Ni) (i = 1, 2) solid solutions. Further milling led to a partial disordering of B2-Fe₄₇Al₅₃; it has undergone an order–disorder transition which is characterized by an expansion of the volume Δa₀ (lattice disorder) and a magnetic transition from the paramagnetic to ferromagnetic state which is characterized by strong ferromagnetic interactions in the alloy. The nanocrystalline bcc α_i-Fe(Al, Ni) solid solution was ferromagnetic with a mean crystallite size of 6 nm.     

A first-principles theoretical simulation on the electronic structures and optical absorption properties for O vacancy and Ni impurity in TiO2 photocatalysts

The band structures and optical absorption spectra of O vacancy and Ni ion doped anatase TiO₂ were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (DFT). From the calculated results, a phenomenon of “impurity compensation” was found: the lower formation energy for O vacancy than Ni impurity indicated that introducing the intrinsic defect of O vacancy into Ni ion doped TiO₂ sample was very possible; the positive binding energy for the combination of O vacancy and Ni impurity indicated that two defects were apt to bind to each other; While Ni impurity produced the donor levels in the forbidden band of TiO₂, Ni impurity with O vacancy produced the acceptor levels upon which the excitation led to the photogenerated electrons with high energy and transferability. The combination of absorption spectra for O vacancy and Ni impurity with O vacancy models could reproduce the experimental measurement very well.     

B改善单晶和多晶Ni3Al合金力学性能的微观机制

通过测量Ｂ含量从０．００至２．２２ａｔ％的单晶和多晶Ｎｉ₃Ａｌ合金的正电子寿命谱，研究了单晶和多晶Ｎｉ₃Ａｌ合金中的微观缺陷和电子结构。结果表明，多晶Ｎｉ₃Ａｌ合金晶界中存在着开空间大于空位的缺陷。晶界缺陷处参与形成Ｎｉ－Ｎｉ和Ｎｉ－Ａｌ键的价电子浓度比基体或位错处的低，晶界是结合力弱化区域。偏聚到Ｎｉ₃Ａｌ合金缺陷上的Ｂ与缺陷处的Ｎｉ或Ａｌ原子形成强的共价键而增强了这些地方的结合力。以间隙方式固溶到Ｎｉ_{3< 关键词：}     

First-principles calculations of electronic and magnetic properties of Ni3Pd and Pd3Ni

Results of first-principles calculations of the electronic structure for the ordered compounds Ni₃Pd and Pd₃Ni at the equilibrium volume with L1₂ structure reveal that the Ni atoms carry an enhanced moment and that an induced moment is found on the Pd atoms. The Ni moment is higher in Pd₃Ni, whereas the Pd moment differs only slightly for these compounds. Large bulk moduli are found (341.34 GPa for Ni₃Pd and 314.35 GPa for Pd₃Ni), and an abrupt collapse of the magnetic moment is observed in Pd₃Ni under lattice compression. The results indicate good conductivity for these compounds as well as half-metallicity for Ni₃Pd.     

Structures magnetiques des composes MFe2Se4 (M = Ti,V, Cr,Fe, Co,Ni)

Ternary selenides MFe₂Se₄ [M = Ti, V, Cr, (Fe), Co, Ni] are studied by neutron diffraction, electrical conductivity and Mössbauer effect. Several new common features appear in these monoclinic isomorphous compounds (space groupe I2/m), with a M₃□X₄, ordering of vacancies derived from B8 type. Half of the iron atoms are located in (00l) vacancy planes. Other iron and M atoms are statistically distributed in full planes. These compounds are all ferrimagnetic and show a metallic type conductivity. Magnetic moments are weak and the moments of the atoms located in full planes are strongly reduced (50–70%). In all cases, we must assume a delocalization of the electrons of the cations.     

Evaluation of structural vacancies for 1/1-Al–Re–Si approximant crystals by positron annihilation spectroscopy

The size of structural vacancies and structural vacancy density of 1/1-Al–Re–Si approximant crystals with different Re compositions were evaluated by positron annihilation lifetime and Doppler broadening measurements. Incident positrons were found to be trapped at the monovacancy-size open space surrounded by Al atoms. From a previous analysis using the maximum entropy method and Rietveld method, such an open space is shown to correspond to the centre of Al icosahedral clusters, which locates at the vertex and body centre. The structural vacancy density of non-metallic Al₇₃Re₁₇Si₁₀ was larger than that of metallic Al₇₃Re₁₅Si₁₂. The observed difference in the structural vacancy density reflects that in bonding nature and may explain that in the physical properties of the two samples.     

三元合金Cu76Ni15Sn9的离子溅射研究

在２７ｋｅＶ Ａｒ⁺离子轰击时,用收集膜技术结合俄歇谱仪（ＡＥＳ）,研究了三元合金Cu₇₆Ni₁₅Sn₉系统的择优溅射行为。同时使用扫描电子显微镜（ＳＥＭ）与电子探针微分析（ＥＰＭＡ）．观察了靶点表面形貌变化并测定了形貌特征微区的合金组份原子的相对百分浓度。结果表明,Ｃｕ原子较Ｎｉ原子、Ｎｉ原子较Ｓｎ原子,在所测定范围（０─６０°）内择优发射。最后讨论了靶点表面形貌特征和“元素局域富集”现象对择优溅射过程的影响。 关键词：     

B在Hg0.75Cd0.25Te中掺杂效应的第一性原理研究

基于密度泛函理论的第一性原理方法,通过形成能和束缚能的计算研究了B在Hg_0.75Cd_0.25Te 中的掺杂效应.结果表明B在Hg_0.75Cd_0.25Te中存在着两种主要形态:第一种是在完整的 Hg_0.75Cd_0.25Te材料中B稳定存在于六角间隙位置而非替位.此时,B形成容易激活的三级施主使材料表现为n型.另一种是在有Hg空位存在的Hg_0.75Cd_0.25Te中B更容易与Hg空位结合形成缺陷复合体,其束缚能达到了0.96 eV.这种复合体在Hg_0.75Cd_0.25Te材料中形成单施主也使材料表现为n型.考虑到辐照损伤形成的Hg空位受主,这种B与Hg空位的复合体是制约B离子在MCT中注入激活的一个重要因素.