Electronic structure of (BP)n/(BAs)n (0 0 1) superlattices

An accurate ab initio full potential linear muffin-tin orbital method has been used to investigate the structural, electronic and optical properties of BP, BAs and their (BP)_n/(BAs)_n superlattices (SLs). The exchange-correlation potential is treated with the local density approximation of Perdew and Wang (LDA-PW). The calculated structural properties of BP and BAs compounds are in good agreement with available experimental and theoretical data. It is found that BP, BAs and their alloys exhibit an indirect fundamental band gap. The fundamental band gap decreases with increasing the number of monolayer n. The optical properties show that the static dielectric constant significantly decreases in superlattices compared to their binary compounds.     

First-principles study of electronic structure and optical properties of barium strontium titanates (BaxSr1−xTiO3)

Using first-principles calculations based on density-functional theory in its local-density approximation, we investigate the energy band structures and total density of states (TDOS) of barium strontium titanates (BSTs). Direct band gaps of 1.89 and 1.87 eV at the Γ point in the Brillouin zone are calculated for Ba_xSr_1−xTiO₃ (x = 2/3 and 1/3), respectively. The optical properties of the above perovskites in the core-level spectra are investigated by the first-principles under scissor approximation. The real and imaginary parts of the complex dielectric function and derive optical constants, viz., the refractive index, extinction coefficient, reflectivity, and the electron energy-loss spectrum are calculated.     

Electronic properties of InAs/GaAs nanowire superlattices

The electronic properties of strained InAs/GaAs nanowire superlattices are computed using a semi-empirical sp³d⁵s^* tight-binding model, taking strains, piezoelectric fields and image charge effects into account. Strain relaxation appears to be efficient in nanowire heterostructures, but is highly inhomogeneous in thin InAs layers. It digs a well in the conduction band that traps the electrons at the surface of the nanowires. This likely decreases the oscillator strength and might ease the capture of the electrons by nearby surface defects.     

First-principles study of structural, elastic, electronic and optical properties of SrMO3 (M=Ti and Sn)

We present structural, elastic, electronic and optical properties of the perovskites SrMO₃ (M=Ti, and Sn) for different pressure. The computational method is based on the pseudo-potential plane wave method (PP-PW). The exchange-correlation energy is described in the generalized gradient approximation (GGA). The calculated equilibrium lattice parameters are in reasonable agreement with the available experimental data. This work shows that the perovskites SrTiO₃, and SrSnO₃ are mechanically stable and present an indirect band gaps at the Fermi level. Applied pressure does not change the shape of the total valence electronic charge density and most of the electronic charge density is shifted toward O atom. Furthermore, in order to understand the optical properties of SrMO₃, the dielectric function, absorption coefficient, optical reflectivity, refractive index, extinction coefficient and electron energy-loss are calculated for radiation up to 80 eV. The enhancement of pressure decreases the dielectric function and refractive indices of SrTiO₃ and SrSnO₃.     

Electronic structure and optical properties of TbNi5−xCux

In this paper we present theoretical investigation of optical conductivity for intermetallic TbNi_5−xCu_x series. Within the framework of LSDA+U calculations, electronic structure for x=0, 1, 2 is calculated and additionally optical conductivity is obtained. Disorder effects of Cu for Ni substitution on a level of LSDA+U densities of states (DOS) are taken into account via averaging over all possible Cu ion positions in the unit cell for given doping level x. Gradual smoothing of optical conductivity structure at 2 eV together with simultaneous intensity growth at 4 eV corresponds to increase of Cu and decrease of Ni content.     

First principles study of the electronic and optical properties of SbTaO4

The electronic density of states (DOS), band structure and optical properties of orthorhombic SbTaO₄ are studied by first principles full potential-linearized augmented plane wave (FP-LAPW) method. The calculation is done in the framework of density functional theory with the exchange and correlation effects treated using generalized gradient approximation (GGA). We find an indirect band gap of 1.9 eV at the R→Γ symmetry direction of the Brillouin zone in SbTaO₄. It is observed that there is a strong hybridization between Ta-5d and O-2p electronic states which is responsible for the electronic properties of the system. Using the projected DOS and band structure we have analyzed the interband contribution to the optical properties of SbTaO₄. The real and imaginary parts of the dielectric function of SbTaO₄ are calculated, which correspond to electronic transitions from the valence band to the conduction band. The band gap obtained is in close agreement with the experimental data.     

Optical and electrical properties of nonstoichiometric a-Ge1−xCx films prepared by magnetron co-sputtering

Amorphous non-hydrogenated germanium carbide (a-Ge_1−xC_x) films have been prepared by magnetron co-sputtering method in a discharge of Ar. The dependence of structural and chemical bonding properties on the Ge/C ratio (R) has been investigated by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The relationship between the chemical bonding and the optical and electrical properties of the a-Ge_1−xC_x films has also been explored. It has been shown that the refractive index of the films increases from 2.9 to 4.4 and the optical gap decreases from 1.55 to 1.05 eV as R increases from 1.22 to 5.67. Moreover, the conductivity σ increases clearly and the activation energy E_a decreases with the increasing R owing to the reduction of sp³ CGe bonds. The a-Ge_1−xC_x films exhibit refractive index and optical gap values changing with x in a wide range, which may make a-Ge_1−xC_x films good candidates in the fields of protection coatings for IR windows and electronic devices.     

First principles investigation of electronic and optical properties of AgAlO2

The electronic and optical properties of AgAlO₂ were determined by using Generalized Gradient Approximation (GGA) suggested by Perdew–Burke–Ernzerhof (PBE) with the addition of Hubbard potential along with linearized augmented plane wave pseudopotential. Our computed band structure infers that our calculated bandgap (1.5?eV) is closer to the experimental (2.81?eV) as compare to the previous theoretical values (1.16?eV). The investigated band structure also reflects that AgAlO₂ is an indirect semiconductor material. The investigated atomic positions and lattice constants are in good agreement with the experimental values than the earlier theoretical values. From presented optical properties one can observe that AgAlO₂ is a good conducting material. The absorption spectrum infers that AgAlO₂ is an expensive material for photo-electronic devices or solar-cell applications.     

Magneto-oscillation of mid-gap photoluminescence in AlAs:Yb/GaAs superlattices

On AlAs:Yb/GaAs superlattice samples, we measured photoluminescence (PL) spectra including their temperature dependence, magnetic field dependence and resistance up to 25 T. In case of selective excitation of well layers, two broad band PLs were observed in additional to the exception of intra-4f PL from Yb. These peaks show oscillatory behavior similar to that of two-dimensional electron system. From the periods of the oscillation, the electron densities are estimated of the order of which are cannot be archived by usual photoexcitation. It was found that the electron density shows a linear dependence on the excitation energy. To explain such distinctive phenomena, we proposed a new model where Yb ions form hole traps in AlAs.     

Multiferroic studies on (BiFeO3)m(BaTiO3)n superlattice structures

BiFeO₃ has been studied extensively due to its room temperature multiferroic features and has been proven as a promising candidate for device applications. But BiFeO₃ possesses some drawbacks like high leakage current and complicated magnetic ordering, giving rise to a canted antiferromagnetic behavior. Hence, a superlattice approach of BiFeO₃ and BaTiO₃ with a good lattice matching was fabricated and the room temperature ferroelectric and ferromagnetic properties were studied. The macroscopic and local probe studies reveal a ferroelectric nature at room temperature, and most importantly a weak ferromagnetic like behavior was observed. The ferromagnetic behavior is expected to arise due to the variation introduced in the spin modulation of single BiFeO₃ layer due to the superstructure formation.     

The electronic structure and properties of Fe6(N1−xCx)2 carbonitrides by first-principles calculations

Electronic structure and properties of Fe₆(N_1−xC_x)₂ carbonitrides with 0≤x≤1, i.e. the concentrations of N and C elements are respectively in range of 0∼7.69 wt% and 0∼6.67 wt%, have been studied by first-principles calculations based on density functional theory (DFT) implemented in the Cambridge Serial Total Energy Package (CASTEP) code. The calculated results show that the Fe₆(N_1−xC_x)₂ carbonitrides are thermodynamically and mechanically stable. Lattice parameters and stability of the carbonitrides increase when C atoms replace N atoms in Fe₆N₂ unit cell. In Fe₆(N_1−xC_x)₂ unit cell, the hybridization effect between C-2p and Fe-3d states is stronger than that between N-2p and Fe-3d states. Elastic properties and melting points of the carbonitrides change slightly with the substitution of C atoms for N atoms in Fe₆(N_1−xC_x)₂ carbonitrides.     

Two potassium rare-earth polyphosphates KLn(PO3)4 (Ln=Ce, Eu): Structural, optical, and electronic properties

Two potassium rare-earth polyphosphate single-crystals KLn(PO₃)₄ (Ln=Ce (1), Eu (2)) have been synthesized by the high-temperature solution reaction and characterized by single-crystal X-ray diffraction. The two isostructural compounds crystallize in the monoclinic system with space group P2₁, and all cell parameters shrink with the decrease of Ln³⁺ ion radius. The main structural feature is (PO₃)₄⁴⁻ wavy chains and infinite tunnels delimited by LnO₈ and KO₈ polyhedra. The energy band structures, density of states (DOS), and optical response functions for 1 have been calculated with the density functional theory (DFT) method, and the dielectric functions and refractive indices have been discussed. The measurements of the absorption and emission spectra show that 1 exhibits the ultraviolet emissions, and 2 displays the characteristic yellow-red emissions of Eu³⁺.     

Preparation and physical properties of CuxWO3

We report on the study of WO₃ doped with Cu using sol-gel (Cu_xWO₃^d) and impregnation (Cu_xWO₃ⁱ) methods. All materials are well crystallized and exhibit single phases whose crystallite size ranges from 17 to 100 nm depending on Cu amount and the preparation technique. The conductivity dependence on temperature demonstrates semiconductor behavior and follows the Arrhenius model, with activation energies, E_σ, commonly in the range 0.4-0.6 eV. Moreover, the thermopower study shows that Cu_xWO₃^d is mainly of p-type conductivity, whereas Cu_xWO₃ⁱ is n-type. The mechanism of conduction is attributed to a small polaron hopping. The doping process is found to decrease the interband transition down to 520 nm depending on the preparation conditions. The photoelectrochemical characterization confirms the conductivity type and demonstrates that the photocurrent J_ph increases with Cu-doping. Taking into consideration the activation energy, the flat band potential and the band gap energy, the band positions of each material are proposed according to the preparation method and Cu amount.     

Multiple modes of surface plasmonic polaritons in transversely-truncated metal/dielectric superlattices

The surface plasmonic polariton (SPP) of a transversely-truncated metal/dielectric superlattice (SL) structure has been solved with an approximate method. The effect of inter-layer interfaces in the SL is taken into consideration efficiently in comparison with the effective-medium method. The silver/air and silver/SiO₂ SLs with a shorter period are regarded as two specific examples in numerical calculation. A series of separated SPP modes are found and highly localized at the surface, and the highest-frequency mode is the only one also predicated by the effective-medium method. These results obviously show the effect of inter-layer interfaces in the case of short period, whilst the reliability and limitation of the effective-medium method is presented as well. Because the skin depths of the modes are extremely small, the SLs can be used as ideal surface-wave waveguides.     

Effect of sulfur substitutions on optical, electrical and structural properties of Ge(SxSe1−x)2 system

Glasses in the system Ge-Se-S were prepared with different Se/S ratios in order to investigate the compositional dependence of selected physical properties. We report the results of a systematic study examining the UV-vis transmission, dc electrical conductivity and X-ray diffraction of the system Ge(S_xSe_1−x)₂ with x=0, 0.1, 0.4 and 1.0 where replacement of S by Se was made. The changes in the optical energy gap, E_g, (from 1.95 to 2.43 eV) and band tail width, E_e, (from 103 to 243 meV) behave contrarily to the change in refractive index, n, (from 2.3 to 2) with the progressive replacement of S by Se. This behavior was discussed and interpreted with the changes in cohesive energy. The analysis of defects in the prepared films was carried out by the examination of activation energies obtained from dc electrical conductivity. The analysis of the X-ray diffraction pattern revealed a remarkable reduction in the intensity of the first and second diffraction peaks with the progressive replacement of S content, which confirms a change in the intermediate range order structure: reorganization of the structural properties.     

The structural, electronic and optical properties of CdxZn1 − xSe ternary alloys

The structural, electronic, and optical properties of Cd_xZn_1 − xSe alloys are investigated using the first-principles plane-wave pseudopotential method within the LDA approximations. In particular, the lattice constant, bulk modulus, electronic band structures, density of state, and optical properties such as dielectric functions, refractive index, extinction coefficient and energy loss function are calculated and discussed. Our results agree well with the available data in the literature.     

Ultrathin (CoFe/Pt)n multilayers with tuned magnetic properties

Perpendicular magnetic anisotropy (PMA) has been investigated in ultrathin (CoFe [0.2] nm/Pt [0.2] nm)_n multilayers. The Pt layers show an fcc crystal structure with a preferred [111] orientation. The multilayers with n=3, 4 show PMA in the as-grown state, which can be enhanced by thermal annealing. However, no PMA is observed in the as-grown state with higher repetitions (n>&=5), although it is observed after thermal annealing. For 1=&<n=&<8, the anisotropy energy is around 10⁵ J/m³ for all (CoFe [0.2]/Pt [0.2])_n stacks. The perpendicular anisotropy is related to layer thickness and interface roughness.     

Effect of Cu deficiency on the optical properties and electronic structure of CuIn1−xGaxSe2

Spectroscopic ellipsometry measurements of CuInSe₂ (CIS) and CuIn_1−xGa_xSe₂ (CIGS) over a range of Cu compositions reveal that there are important differences in electronic and optical properties between α-phase CIS/CIGS and Cu-poor CIS/CIGS. We find a reduction in the imaginary part of the dielectric function ?₂ in the spectral region, 1-3 eV. This reduction can be explained in terms of the Cu-3d density of states. An increase in band gap is found for Cu-poor CIS and CIGS due to the reduction in repulsive interaction between Cu-3d and Se-4p states. We also characterize the dielectric functions of polycrystalline thin-film α-phase CuIn_1−xGa_xSe₂ (x=0.18 and 0.36) to determine their optical properties and compare them with similar compositions of bulk polycrystalline CuIn_1−xGa_xSe₂. The experimental results have important implications for understanding the functioning of polycrystalline optoelectronic devices.     

Sn1−xBixO2 and Sn1−xTaxO2 (0≤x≤0.75): A first-principles study

The structural, elastic, electronic and optical (x=0) properties of doped Sn_1−xBi_xO₂ and Sn_1−xTa_xO₂ (0≤x≤0.75) are studied using the first-principles pseudopotential plane-wave method within the local density approximation. The independent elastic constants C_ij and other elastic parameters of these compounds have been calculated for the first time. The mechanical stability of the compounds with different doping concentrations has also been studied. The electronic band structure and density of states are calculated and the effect of doping on these properties is also analyzed. It is seen that the band gap of the undoped compound narrowed with dopant concentration, which disappeared for x=0.26 for Bi doping and 0.36 for Ta doping. The materials thus become conductive oxides through the change in the electronic properties of the compound for x≤0.75, which may be useful for potential application. The calculated optical properties, e.g. dielectric function, refractive index, absorption spectrum, loss-function, reflectivity and conductivity of the undoped SnO₂ in two polarization directions are compared with both previous calculations and measurements.