Hydrogenic impurity in double quantum dots

The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically.     

Hydrogenic impurity states in zinc-blende InxGa1−xN/GaN in cylindrical quantum well wires

Within the framework of effective-mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende (ZB) In_xGa_1−x  N/GaN cylindrical quantum well wires (CQWWs) is investigated using variational procedures. Numerical results show that the ground-state donor binding energy _Eb$E_b$ is highly dependent on the impurity position and the CQWWs structure parameters. The donor binding energy for a shallow donor impurity located at the center of the CQWWs is the largest. As the impurity position changes from the center of the wire to its edge, the donor binding energy gets smaller. Also, we have found that In concentration is a very important value to tailor the system, since the binding energies close to binding energy maxima are strongly dependent on In content.     

Hydrogenic donor states in wurtzite InGaN/GaN coupled quantum dots

The binding energies of the hydrogenic impurity in wurtzite InGaN coupled quantum dots (QDs) are calculated by means of a variational method, considering the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical results show that the strong built-in electric field induces an asymmetrical distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located in the center of the left dot, the donor binding energy is largest and insensitive to the barrier height of the wurtzite InGaN coupled QDs.     

Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots

Based on the effective-mass approximation, we have calculated the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method. Numerical results show that the donor binding energy is highly dependent on the impurity position and coupled QDs structural parameters. The donor binding energy is largest when the impurity is located at the center of quantum dot. When the impurity is located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width.     

Electronic states of coupled quantum dot-ring structure under lateral electric field with and without a hydrogenic donor impurity

A detailed investigation of the lateral electric field effect on single electron states in coupled quantum dot-ring structure has been systematically studied for cases with and without an on-center hydrogenic donor impurity. The single electron energy spectrum has been found using the effective mass approximation and an exact diagonalization technique. The electron ground state's probability density has been examined for different values of the confinement energies and depth of dot confinement relative to the bottom of the quantum ring and barrier thickness. The energy level's dependence on the electric field strength has been studied considering the effects of mentioned parameters of the structure and hydrogenic donor impurity.     

Hydrostatic pressure effect on the donor impurity states in asymmetric multiple quantum wells

Based on the effective-mass approximation, hydrostatic pressure effect on the donor binding energy in zinc blende (ZB) InGaN/GaN asymmetric multiple quantum wells (AMQWs) is investigated variationally. Numerical results show that the hydrostatic pressure increases the donor binding energy for any impurity position. Moreover, the hydrostatic pressure effect is more noticeable if the impurity is localized inside the wide well of the AMQWs. For any hydrostatic pressure, the donor binding energy is distributed asymmetrically with respect to the center of the AMQWs. In particular, the donor binding energy of impurity located at the center of the wide well of the AMQWs is insensitive to the increment of the inter-well barrier width if the inter-well barrier width is large.     

Excitonic optical absorption in wurtzite InGaN/GaN quantum wells

Within the framework of the effective-mass and envelope function theory, exciton states and optical properties in wurtzite (WZ) InGaN/GaN quantum wells (QWs) are investigated theoretically considering the built-in electric field effects. Numerical results show that the built-in electric field, well width and in composition have obvious influences on exciton states and optical properties in WZ InGaN/GaN QWs. The built-in electric field caused by polarizations leads to a remarkable reduction of the ground-state exciton binding energy, the interband transition energy and the integrated absorption probability in WZ InGaN/GaN QWs with any well width and In composition. In particular, the integrated absorption probability is zero in WZ InGaN/GaN QWs with any In composition and well width L > 4 nm. In addition, the competition effects between quantum confinement and the built-in electric field (between quantum size and the built-in electric field) on exciton states and optical properties have also been investigated.     

Donor impurity states in direct-gap SiGe quantum well: Applied electric field and quantum size effects

Within the framework of the effective-mass approximation and variational procedure, competition effects between applied electric field and quantum size on donor impurity states in the direct-gap Ge/SiGe quantum well (QW) have been investigated theoretically. Numerical results show that the applied electric field (quantum size) dominates electron and impurity states in direct-gap Ge/SiGe QW with large (small) well width. Moreover, the competition effects also induce that the donor binding energies show obviously different behaviors with respect to electric field in the QW with different well widths. In particular, when the impurity is located at left boundary of the QW, the donor binding energy is insensitive to the variation of well width when well width is large for any electric field case.     

External electric field effects on the electronic and hydrogenic impurity states in ellipsoidal and semi-ellipsoidal quantum dots

In the effective mass approximation, energy eigenvalues of an electron confined in ellipsoidal and semi-ellipsoidal quantum dots, with and without hydrogenic impurity, under the influence of an external electric field have been investigated, using the matrix diagonalization method. The lower-laying states of the electron as functions of the electric field strength, the dot size and its geometry are calculated. Our results show that the electronic states are strongly affected by the applied electric field, the size and the geometry of the dot.     

Donor impurity states in zinc-blende GaN/AlGaN quantum well: Quantum confinement and laser-dressed effects

Within the framework of effective-mass approximation, the effects of a laser field on the ground-state donor binding energy in zinc-blende (ZB) GaN/AlGaN quantum well (QW) have been investigated variationally. Numerical results show that the donor binding energy is highly dependent on QW structure parameters and Al composition in ZB GaN/AlGaN QW. The laser field effects are more noticeable on the donor binding energy of an impurity localized inside the QW with small well width and low Al composition. However, for the impurity located in the vicinity of the well edge of the QW, the donor binding energy is insensible to the variation of Al composition, well width and laser field intensity in ZB GaN/AlGaN QW. In particular, the competition effects between laser field and quantum confinement on impurity states have also been investigated in this paper.     

Hydrogenic impurity in a quantum dot: Comparison between the variational and strong perturbation methods

A comparison is given between the variational and strong perturbation techniques. It has been shown that the variational method gives, in general, better results. Also, a new formulation is presented for the strong perturbation technique that depends on a simpler equivalent form of the perturbed part of the Hamiltonian. Moreover, common expressions which are valid for both treatments have been obtained. The results are applied to calculate the binding energy for a hydrogenic impurity placed in a finite confining potential spherical quantum dot in the states (1s), (2p) and (2s). The results obtained hitherto for a central impurity by using the strong perturbation technique are deduced in a much simpler way. As regards the off-central impurity some new expressions have been derived in both treatments. The numerical results for the two states (1s) and (2p) have also been investigated.     

Quantum entanglement transition in vertically coupled two single-electron quantum dots with charged impurity

Effects of a charged impurity on the ground state of two vertically coupled identical single-electron quantum dots with and without applied magnetic field are investigated. In the absence of the magnetic field, the investigations of the charged impurity effect on the quantum entanglement (QE) in some low-lying states are carried out. It is found that, both the positive charged impurity (PCI) and the negative charged impurity (NCI)reduce the QE in the low-lying states under consideration except that the QE in the ground state is enhanced by the NCI. Additionally, in the domain of B from 0 Tesla to 15 Tesla, the ground state energy E, the ground state angular momentum L and the ground state QE entropy S are worked out. As far as the ground state are concerned, the PCI (NCI) blocks (induces) the angular momentum phase transition and the QE phase transition besides the known fact (i. e., the PCI/NCI decreases/increases the energy) in the magnetic field.     

AlGaN/GaN抛物量子点的尺寸相关三阶非线性极化率研究

在有效质量近似框架下,通过求解AlxGa1－xN/GaN自组织圆柱形量子点的薛定谔方程,计算了量子点中导带电子在两个正交方向：Z‖和Z⊥方向上产生的三阶非线性极化率.计算中,电子的运动受到自组织量子点的抛物型束缚势和内建压电场的影响.计算表明,量子点的三阶非线性极化率的数量级达到了10－14m2/V2.进一步在Z‖和Z⊥方向上,考察了三阶非线性极化率与两个方向上的抛物束缚势的频率ωp、ωz,量子点的高度L,半径R,Al的含量x之间的关系.     

Influence of the built-in electric field on luminescent properties in self-formed single InxGa1−xN/GaN quantum dots

Based on the framework of effective-mass approximation and variational approach, luminescent properties are investigated theoretically in self-formed wurtzite In_xGa_1−xN/GaN quantum dots (QDs), considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the different structural parameters (the height L and the radius R) are calculated with and without the built-in electric field in detail. The results elucidate that the strong built-in electric field has a significant influence on luminescent properties of In_xGa_1−xN/GaN QDs.     

Electron Raman scattering in single and multilayered spherical quantum dots: Effects of hydrogenic impurity and geometrical size

Based on the effective mass and parabolic one-band approximations, the differential cross-section for the intersubband electron Raman scattering process in a single and multilayered spherical quantum dots is investigated. The influence of an on-center hydrogenic impurity and geometrical parameters such as the well and barrier widths on the differential cross-section is studied. Results show that the number, the position and the magnitude of the peaks of emission spectra, considerably depend on the presence of the hydrogenic impurity as well as geometrical parameters. Results also reveal that the magnitude of the peaks significantly depend on the polarization vectors of incident and scattered lights.     

Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

In this work we investigate electron–impurity binding energy in GaN/HfO₂ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron–impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron–impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO₂ with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.     

Pressure effects on the donor binding energy in zinc-blende InGaN/GaN quantum dot

Based on the effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of the hydrogenic impurity in zinc-blende (ZB) InGaN/GaN quantum dot (QD) are investigated by means of a variational procedure. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD structure parameter. Moreover, it is found that the hydrostatic pressure has a remarkable influence on the donor binding energy of the hydrogenic impurity located at the vicinity of dot center in ZB InGaN/GaN QD.