Investigation of cross sections for the formation and destruction of negative boron ions

The electron loss and electron capture cross sections σ _i,i+m and σ _i,i−m for boron ions and atoms traveling at the velocities V=1.19 and 1.83 a.u. in H₂, He, N₂, Ne, Ar, and Xe are measured. The known experimental data on these cross sections at velocities near the cross-section maximum are analyzed. It is found that the electron loss cross sections can be described by a formula which was previously derived in the free-collision approximation and takes into account features of both the ions and the ambient atoms. As the nuclear charge Z _t of the ambient atoms increases, the cross sections vary nonmonotonically, increasing on average as Zt _t ^1/2 . A formula based on the model of independent electrons is proposed for electron capture by ions with small values of the charge i. It describes the dependence of the electron capture cross section σ _i,i−1 on the mean binding energy of an electron in an ion with the charge i−1. The total electron capture cross section σ _i,i−1 is proportional to the number of vacancies in the unfilled electron shell nearest the nucleus. The cross sections 0σ _i,i−1 exhibit substantially nonmonotonic variation with Z _t, increasing on average as Z _t ^1/3 . Zh. éksp. Teor. Fiz. 116, 1539–1550 (November 1999)     

Kinetics of atoms in an elliptically polarized standing wave

We examine the kinetics of atoms with their ground and excited states being degenerate in the projection of angular momentum. The atoms are located in a standing wave with uniform elliptical polarization. Using the j _g =1/2→j _e =1/2 transition as an example, we show that the friction and diffusion of atoms strongly depend on the ellipticity of the field. For instance, in the low saturation limit the frictional force contains, in addition to the ordinary Doppler friction term, a term that can be interpreted as Sisyphean friction. Under certain conditions, the contributions reflecting the degeneracy of the ground state are dominant, with the result that the values of the friction and diffusion coefficients (and hence the rate of kinetic processes) may differ from the values predicted by the two-level atomic model by several orders of magnitude. Zh. éksp. Teor. Fiz. 115, 791–804 (March 1999)     

The superconducting properties of YBa2(Cu1−xMx)3O7 for M=Zn and Ni

Transverse and zero-field μSR measurements were made on YBa₂(Cu_1−xNi_x)₃O_7−y withx=0.1 and 0.2, and YBa₂(Cu_1−x Zn _x )₃O_7−y withx=0.03, 0.06, 0.1, and 0.16, wherey≈0.1. Since doping may lead to magnetic ordering this was searched for with both zero and transverse field μSR, but no evidence was found over the temperature range studied: 10–100 K. However, depolarization rates as functions of temperature were obtained, and the low temperature values of these are σ=3.2 μs⁻¹.1.6μs⁻¹, and 1 μs⁻¹ forx=0.01, and 0.2 Ni, respectively, and σ=0.8 μs⁻¹, 0.75 μs⁻¹, 0.65 μs⁻¹, and 0.4 μs⁻¹ forx=0.03, 0.06, 0.1, and 0.16 Zn, respectively. Estimates for the effect of decreasing electron concentration for Zn are made, but these alone do not account for the drop in σ. Estimates for the effect of scattering on λ and hence σ are made. The reduction in σ for Ni dopant is in surprisingly good agreement with these estimates. For Zn the order of magnitude is correct, but the relative lack of further change in σ after the effect of the first 0.03 addition seems to imply a saturation of the effect of scattering.     

Mechanism of giant magnetoresistance in intermetallic compounds of rare-earth ions and actinides

Giant positive or negative magnetoresistance is calculated in a band model. The spectra of the band electrons in a two-sublattice antiferromagnetic intermetallic compound depend on the antiferromagnetism vector L(T,H). The metamagnetic transition to the ferromagnetic phase is accompanied by splitting with respect to the spin σ, displacement of the energy bands, and a decrease in the effective masses of the band electrons. This mechanism of giant negative magnetoresistance is also accompanied by an increase in the relaxation time τ_jσ. Scattering by chemical-bond fluctuations is considered as the main relaxation mechanism. Giant positive magnetoresistance results from a four-subband model of 4f and 5f intermetallic compounds. The electron effective masses m _jσ(J _jT ) of the (j,σ) bands increase with the mean angular momentum J _1T (T,H) of an ion in the jth sublattice of 4(5)f ions. The thermodynamics of such a four-sublattice model, the nonlinear magnetization and magnetoresistance curves, and the nonmonotonic dependence of the specific heat C _m(T,H) on the field H are calculated. Fiz. Tverd. Tela (St. Petersburg) 39, 1806–1814 (October 1997)     

Reciprocity relations for the effective electrical conductivity of randomly inhomogeneous media in the fractal regime

An exact relation for the realization-averaged effective conductivities in the fractal region is found for two-dimensional randomly inhomogeneous media. It has the form {σ _e (τ,L)~× {1/σ _e (−τ,L)~⁻¹=σ _e ² (τ=0, L≫ξ), where ξ is the correlation length (the self-averaging scale), L is the size of the system, τ=(p-p _c )/p _c , and p _c is the percolation threshold. For L≫ ξ, the system is self-averaged, and the relation transforms into the Dykhne reciprocity relation, A. M. Dykhne, Zh. éksp. Teor. Fiz. 59, 110 (1970) [Sov. Phys. JETP 32, 63 (1971)] σ _e (τ)σ _e (−τ])=σ _e ² (τ=0)= σ ₁ σ ₂. A similar relation is obtained for media with an exponentially broad distribution of local conductivities, as well as for individual realizations of some deterministic structures. Zh. éksp. Teor. Fiz. 113, 1484–1490 (April 1998)     

Optical nutation at a Raman-active transition

Optical nutation at the Raman-active transition 6P _1/2−6P _3/2 of thallium atoms (ω _R /2πc=7793 cm ⁻¹) under resonant Raman excitation by a biharmonic picosecond pulsed field, giving rise to substantial motion of the population, is detected. Optical nutation appears as an oscillatory behavior of the energy of the anti-Stokes scattering of probe pulses, which follow with a fixed delay, as a function of the product of the energies of the excitation pulses. As a result of the dynamic Stark effect, which decreases the frequency of the transition under study, resonance excitation conditions are satisfied for negative initial detunings of the Raman excitation frequency from resonance. The Raman scattering cross section for the transition under study is estimated by comparing the experimental data with the calculations. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 1, 7–12 (10 July 1999)     

Simple numerical method of computing the probabilities of angular momentum Jν occurring among possible vectors J Resulting from n angular momentum jμ summation (μ=1?n)

Arelatively simple numerical method of summing angular momentum vectors with maintaining space quantization rules of each summed angular momentum has been presented. The method enables the calculation of the values of probability (p j _μ) of finding a definite angular momentum J _μ among all vectors J being the results of quantum summation of n angular momentum vectors j _μ(μ=1-n. It may be used, e.g., in the calculations of angular momentum of many-particle states. The significance of the paper is connected with the possibility of taking into account, in a simple way, the angular momentum conservation principle for a system which consists of an arbitrary number of excitons. From Yadernaya Fizika, Vol. 67, No. 11, 2004, pp. 2123–2128. Original English Text Copyright ? 2004 by Kaczmarczyk. This article was submitted by the author in English.     

Observational constraint on generalized Chaplygin gas model

We investigate observational constraints on the generalized Chaplygin gas (GCG) model as the unification of dark matter and dark energy from the latest observational data: the Union SNe Ia data, the observational Hubble data, the SDSS baryon acoustic peak and the five-year WMAP shift parameter. The result is obtained that the best-fit values of the GCG model parameters with their confidence level are A _s=0.73_−0.06^+0.06 (1σ) _−0.09^+0.09 (2σ), α=−0.09_−0.12^+0.15 (1σ) _−0.19^+0.26 (2σ). Furthermore, in this model, we can see that the evolution of equation of state (EOS) for dark energy is similar to quiessence, and its current best-fit value is w _0de=−0.96 with the 1σ confidence level −0.91≥w _0de≥−1.00.     

Nature of conduction via impurities in uncompensated silicon

The static conductivity σ(E) and photoconductivity (PC) at radiation frequencies ħω=10 and 15 meV in Si doped with shallow impurities (density N=10¹⁶−6×10¹⁶ cm⁻³, ionization energy ε₁≃45 meV) with compensation K=10⁻⁴−10⁻⁵ in electric fields E=10–250 V/cm are measured at liquid-helium temperatures T. Special measures are taken to prevent the high-frequency part of the background radiation (ħω>16 meV) from striking the sample. It is found that the conductivity σ(E) is due to carrier motion along the D ⁻ band, which is filled with carriers under the influence of the field E. In fields E<E _q (E _q ≃100–200 V/cm) the carrier motion consists of hops along localized D ⁻ states in a 10–15 meV energy band below the bottom of the free band (energy ε=ε₁); for E>E _q carriers drift along localized D ⁻ states with energy ε∞ε₁−10 meV. An explanation is proposed for the threshold behavior of the field dependence of the photo-and static conductivities. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 232–236 (25 August 1997)     

Polarization of the vacuum in a relativistic hydrogenlike atom: The Lamb shift

This paper examines the shift of energy levels in a hydrogenlike atom induced by vacuum polarization effects. The contribution of free polarization is found for the ground state and several excited states in a closed analytical form. For the first time an expression is derived for the radiative correction to the energy in the form of an explicit function of the parameter Zα. The results are valid for states nl _j with the largest values of orbital and total angular momenta (l=n−1 and j=l+1/2). The final expression, found in terms of generalized hypergeometric functions, is a function of three variables, Zα, n, and the ratio of the particle masses on the orbit and in the vacuum loop, i.e., the result is valid for ordinary atoms and for muonic atoms. Several useful asymptotic expressions are also derived. Zh. éksp. Teor. Fiz. 116, 1575–1586 (November 1999)     

Temperature dependences of the high-field magnetization of dilute frustrated ferrimagnetic spinels

Results are presented of an investigation of the magnetic properties of dilute frustrated ferrimagnetic spinels Li_0.5Fe_2.5−x Ga_xO₄ (x=0.8–1.2), which characterize the main parameters of the ferrimagnetic state and provide evidence of local violation of collinear spin ordering and frustrations. In particular, measurements were made of the concentration dependences of the magnetic moment n ₀(x) and the Curie point T _c (x), the magnetization isotherms σ _T (H) at T=4.2 K and H⩽10 kOe, and also the low-and high-field magnetization polytherms σ _H (T). It was established that for x⩾0.8 in fields exceeding the technical saturation field H _s ∼2 kOe, the temperature dependences of the high-field magnetization σ _H (T) between 4.2 and 230 K cannot be described by the Bloch T ^3/2 law whereas this law is satisfied for undiluted Li spinel (x=0). Over the entire temperature range (4.2–230 K) the experimental curves σ _H (T) may be approximated by σ _H (T)=σ ₀(1−AT ^3/2 − BT ^5/2) for x=0.8–1.0 and σ _H (T)=σ ₀[1−CT ^3/2exp(μ(H−H ₀)/k _B T)] for x=1.1, 1.2, where μH ₀∼15 K is the internal field produced by competition between exchange interactions and frustrations. Fiz. Tverd. Tela (St. Petersburg) 40, 1075–1079 (June 1998)     

Trap-centers of self-interstitials in silicon

Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE _c −0.49 eV (σ _n =6.6×10⁻¹⁶cm²) andE _c −0.07 eV (σ _n =4.6×10⁻¹⁶cm²) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the same concentration. The profiles indicate outdiffusion. A level atE _c −0.14 eV (σ _n =1.1×10⁻¹⁶cm²) was not related to A-swirl defects. A level atE _c −0.11 eV (σ _n =1.1×10⁻¹⁵cm²) was only detected in one ingot. The properties of the deep level atE _c −0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation, annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon rather than to an impurity.     

Relaxation phenomena of binary polar liquid mixture in C6H6 from conductivity of solution measured at 10 GHz electric field

The dielectric relaxation times τ _jk ’s and dipole moments μ _jk ’s of the binary (jk) polar mixtures of N,N-dimethyl formamide (DMF) and pyridine dissolved in benzene (i) are estimated using linear slope of σ _jk ″ − σ _ijk ′ curves as well as ratio of slopes of σ _ijk ″ − w _jk and σ _ijk ″ − w _jk curves at w _jk → 0 for different mole fractions τ _jk ’s of pyridine and experimental temperatures under 9.875 GHz electric field. The measured μ _jk ’s and τ _jk ’s agree well with the reported values validating the proposed methods. The solute-solute (dimer) molecular associations are inferred from the plot of τ _jk − x _j and μ _jk − x _j curves for x _j = 0.0 to 0.5 of pyridine and thereafter solute-solvent (monomer) molecular association occurs. The theoretical μ_theo’s are calculated to predict solute-solute and solute-solvent molecular association. The μ _jk − T curves are drawn to show elongation of bond angles and bond moments with temperatures. The thermodynamic energy parameters are calculated from Eyring’s rate theory equations to know the molecular dynamics as well as to ascertain Debye-Smyth relaxation mechanism of the systems.     

Relaxation phenomena of polar non-polar liquid mixtures under low and high frequency electric field

Simultaneous calculation of the dipole moment μ_j and the relaxation time τ_j of a certain number of non-spherical rigid aliphatic polar liquid molecules (j) in non-polar solvents (i) under 9.8 GHz electric field is possible from real ε′_ij and imaginary ε″_ij parts of the complex relative permittivity ε*_ij. The low frequency and infinite frequency permittivities ε_0ij and ε_∞ij measured by Purohitet al [1,2] and Srivastava and Srivastava [3] at 25, 35 and 30°C respectively are used to obtain static μ_s. The ratio of the individual slopes of imaginary σ″_ij and real σ′_ij parts of high frequency (hf) complex conductivity σ*_ij with weight fractionsw _jatw _j → 0 and the slopes of σ″_ij— σ′_ij curves for differentw _js [4] are employed to obtain τ_js. The former method is better in comparison to the existing one as it eliminates polar-polar interaction. The hf μ_js in Coulomb metre (C m) when compared with static and reported μs indicate that μ_s s favour the monomer formations which combine to form dimers in the hf electric field. The comparison among μs shows that a part of the molecule is rotating under X-band electric field [5]. The theoretical μ_theos from available bond angles and bond moments of the substituent polar groups attached to the parent molecules differ from the measured μ_js and μs to establish the possible existence of mesomeric, inductive and electromeric effects in polar liquid molecules.     

Superconductivity and magnetic ordering in YBa2(Cu1−x Fe x )3O7

Transverse-and zero-field μSR measurements have been made for YBa₂(Cu_1−x Fe _x )₃O₇ withx=0.04, 0.08 and 0.12. The temperature range studied was from approximately 7.5 K to 100 K. The onset of magnetic ordering commences at about 7.5 K forx=0.04, 10 K forx=0.08 and 20 K forx=0.12. The Gaussian depolarization parameter, σ ofG _x (t) = exp(−σ² t ²/2), is depressed by a factor of about 0.6 forx=0.04, but for thex=0.08 sample σ is depressed by a factor of 10 and increasing suppression is seen as the temperature is lowered below 45 K. This decrease in σ is interpreted in terms of decreasing electronic mean free paths.     

Classification of Simple Linearly Compact n-Lie Superalgebras

We classify simple linearly compact n-Lie superalgebras with n > 2 over a field ${\mathbb{F}}We classify simple linearly compact n-Lie superalgebras with n > 2 over a field \mathbbF{\mathbb{F}} of characteristic 0. The classification is based on a bijective correspondence between non-abelian n-Lie superalgebras and transitive \mathbbZ{\mathbb{Z}}-graded Lie superalgebras of the form L=?_j=-1^n-1 L_j{L=\oplus_{j=-1}^{n-1} L_j}, where dim L _n−1 = 1, L ₋₁ and L _n−1 generate L, and [L _j , L _n−j−1] = 0 for all j, thereby reducing it to the known classification of simple linearly compact Lie superalgebras and their \mathbbZ{\mathbb{Z}}-gradings. The list consists of four examples, one of them being the n + 1-dimensional vector product n-Lie algebra, and the remaining three infinite-dimensional n-Lie algebras.     

Study of the critical current in YBaCuO films under reactor-neutron irradiation in the low-temperature helium circuit in the 25–300 K range

Changes in the temperature and dose dependences of I-V characteristics and of the critical current j _c of YBaCuO films on MgO and SrTiO₃ substrates under neutron irradiation has been studied at 25–80 K. The transport properties of YBaCuO films on MgO (M1) and SrTiO₃ (S1) substrates were found to behave differently. It is shown that the M1 films have granular structure, and their transport properties were considered within the concept of percolation over weak intergranular links. The S1 are single-crystal films, and their properties are analyzed within a resistive-state theory associated with thermal activation of Abrikosov vortices. It is shown that the degradation rate of the critical temperature T _c of S1 films is 3.5 times smaller than that of the M1 films. The dose dependence of j _c has an exponential character, j _c=j _c(0)exp(−kΦ), where k is related to the number of displaced atoms per neutron and is the same for the M1 and S1 films, irrespective of the irradiation temperature. The pinning energy has been derived from the I-V characteristics and it has been found that the U/kT ratio lies within 20–25 and is independent of neutron flux. It is shown that the radiation-induced disorder changes the pinning mechanism, from pinning at the boundaries of misoriented crystals to that at spatial inhomogeneities, apparently radiation induced. Fiz. Tverd. Tela (St. Petersburg) 40, 1961–1967 (November 1998)