Novel butterfly-shaped fused heteroacenes: synthesis, properties, and device performance of solution-processed field-effect transistors

Two tetrabrominated intermediates obtained by bromination of naphthodithiophene in different solvents were used to construct novel highly π-extended butterfly-shaped heteroarenes 1-6, containing either an 8- or 10-fused ring. The solution-processed organic field-effect transistors based on compound 1 exhibited promising device performance with a hole mobility of 0.072 cm(2) V(-1) s(-1) and a current on/off ratio of 10(6) under ambient atmosphere.     

Bithiophene-imide-based polymeric semiconductors for field-effect transistors: synthesis, structure-property correlations, charge carrier polarity, and device stability

Developing new high-mobility polymeric semiconductors with good processability and excellent device environmental stability is essential for organic electronics. We report the synthesis, characterization, manipulation of charge carrier polarity, and device air stability of a new series of bithiophene-imide (BTI)-based polymers for organic field-effect transistors (OFETs). By increasing the conjugation length of the donor comonomer unit from monothiophene (P1) to bithiophene (P2) to tetrathiophene (P3), the electron transport capacity decreases while the hole transport capacity increases. Compared to the BTI homopolymer P(BTimR) having an electron mobility of 10(-2) cm(2) V(-1) s(-1), copolymer P1 is ambipolar with balanced hole and electron mobilities of ～10(-4) cm(2) V(-1) s(-1), while P2 and P3 exhibit hole mobilities of ～10(-3) and ～10(-2) cm(2) V(-1) s(-1), respectively. The influence of P(BTimR) homopolymer M(n) on film morphology and device performance was also investigated. The high M(n) batch P(BTimR)-H affords more crystalline film microstructures; hence, 3× increased electron mobility (0.038 cm(2) V(-1) s(-1)) over the low M(n) one P(BTimR)-L (0.011 cm(2) V(-1) s(-1)). In a top-gate/bottom-contact OFET architecture, P(BTimR)-H achieves a high electron mobility of 0.14 cm(2) V(-1) s(-1), only slightly lower than that of state-of-the-art n-type polymer semiconductors. However, the high-lying P(BTimR)-H LUMO results in minimal electron transport on exposure to ambient. Copolymer P3 exhibits a hole mobility approaching 0.1 cm(2) V(-1) s(-1) in top-gate OFETs, comparable to or slightly lower than current state-of-the-art p-type polymer semiconductors (0.1-0.6 cm(2) V(-1) s(-1)). Although BTI building block incorporation does not enable air-stable n-type OFET performance for P(BTimR) or P1, it significantly increases the OFET air stability for p-type P2 and P3. Bottom-gate/top-contact and top-gate/bottom-contact P2 and P3 OFETs exhibit excellent stability in the ambient. Thus, P2 and P3 OFET hole mobilities are almost unchanged after 200 days under ambient, which is attributed to their low-lying HOMOs (>0.2 eV lower than that of P3HT), induced by the strong BTI electron-withdrawing capacity. Complementary inverters were fabricated by inkjet patterning of P(BTimR)-H (n-type) and P3b (p-type).     

High-performance organic field-effect transistors: molecular design, device fabrication, and physical properties

In the past decade, tremendous progress has been made in organic field-effect transistors (OFETs). Their real applications require further development of device performance. OFETs consist of organic semiconductors, dielectric layers, and electrodes. Organic semiconductors play a key role in determining the device characteristics. The properties of the organic semiconductors, such as molecular structure and packing, as well as molecular energy levels, can be properly controlled by molecular design. Therefore, we designed and synthesized a series of organic molecules. The synthesized organic semiconductors exhibit excellent field-effect properties due to strong intermolecular interactions and proper molecular energy levels. Meanwhile, the influence of the device fabrication process, organic semiconductor/dielectric layer interface, and organic layer/electrode contact on the device performance was investigated. A deep understanding of these factors is helpful to improve field-effect properties. Furthermore, single-crystal field-effect transistors are highlighted because the single-crystal-based FETs can provide an accurate conducting mechanism of organic semiconductors and higher device performance as compared with thin film FETs.     

A solution-processed trilayer electrochemical device: localizing the light emission for optimized performance

We present a solution-processed trilayer light-emitting device architecture, comprising two hydrophobic and mobile-ion-containing "transport layers" sandwiching a hydrophilic and ion-free "intermediate layer", which allows for lowered self-absorption, minimized electrode quenching, and tunable light emission. Our results reveal that the transport layers can be doped in situ when a voltage is applied, that the intermediate layer as desired can contribute significantly to the light emission, and that the key to a successful operation is the employment of a porous and (～5-10 nm) thin intermediate layer allowing for facile ion transport. We report that such a solution-processed device, comprising a thick trilayer material (～250 nm) and air-stable electrodes, emits blue light (λ(peak) = 450, 484 nm) with high efficiency (5.3 cd/A) at a low drive voltage of 5 V.     

Morphological and compositional evolution of polymeric colloidal monolayer during UV irradiation

In this study, we investigated the morphological and compositional evolution polymeric colloidal monolayer during UV irradiation. A PS colloidal monolayer with interparticle bridges was prepared and exposed to the UV light. As a consequence of photochemical reactions containing chain-scission, UV irradiation induced morphological changes in the monolayer surface including changes in the size, shape, and packing structure of PS particles. By manipulating the UV irradiation time, fine tuning of size and shape of the interstice in the monolayer was achieved. In these procedures, the interparticle bridges play an important role. The UV irradiation induced the formation of polar groups in the PS particle surface and thus the particle surface became highly hydrophilic.     

Effect of acetic acid on the performance of solution-processed gallium doped indium oxide thin film transistors

We investigated a role of acetic acid for solution processed gallium doped indium oxide thin film transistors (TFTs). By adding acetic acid in solution instead of commonly used ethanolamine, electrical performance of GIO TFTs is significantly enhanced. We demonstrated that acetic acid plays a role in enhancing crystallinity, lowering decomposition temperature and reducing hydroxyl groups in the film. The GIO TFTs formed from acetic acid added solution have mobility of 12.68 cm² V^?1 s^?1, threshold voltage of ?7.4 V, on/off current ratio of 1.07 × 10⁸ and subthreshold slope of 0.78 V/decade.     

Recent structural evolution of lactam- and imide-functionalized polymers applied in organic field-effect transistors and organic solar cells

Organic semiconductor materials, especially donor–acceptor (D–A) polymers, have been increasingly applied in organic optoelectronic devices, such as organic field-effect transistors (OFETs) and organic solar cells (OSCs). Plenty of high-performance OFETs and OSCs have been achieved based on varieties of structurally modified D–A polymers. As the basic building block of D–A polymers, acceptor moieties have drawn much attention. Among the numerous types, lactam- and imide-functionalized electron-deficient building blocks have been widely investigated. In this review, the structural evolution of lactam- or imide-containing acceptors (for instance, diketopyrrolopyrrole, isoindigo, naphthalene diimide, and perylene diimide) is covered and their representative polymers applied in OFETs and OSCs are also discussed, with a focus on the effect of varied structurally modified acceptor moieties on the physicochemical and photoelectrical properties of polymers. Additionally, this review discusses the current issues that need to be settled down and the further development of new types of acceptors. It is hoped that this review could help design new electron-deficient building blocks, find a more valid method to modify already reported acceptor units, and achieve high-performance semiconductor materials eventually.

This review highlights the recent structural evolution of lactam- and imide-functionalized polymers applied in organic field-effect transistors and organic solar cells.     

High-performance polymer field-effect transistors: from the perspective of multi-level microstructures

The multi-level microstructure of conjugated polymers is the most critical parameter determining the charge transport property in field-effect transistors (FETs). However, controlling the hierarchical microstructures and the structural evolution remains a significant challenge. In this perspective, we discuss the key aspects of multi-level microstructures of conjugated polymers towards high-performance FETs. We highlight the recent progress in the molecular structures, solution-state aggregation, and polymer crystal structures, representing the multi-level microstructures of conjugated polymers. By tuning polymer hierarchical microstructures, we attempt to provide several guidelines for developing high-performance polymer FETs and polymer electronics.

The multi-level microstructures of conjugated polymers, including solution-state aggregation and crystal structures, are reviewed due to their influence on charge transport in polymer field-effect transistors.     

Gating of single molecule transistors: combining field-effect and chemical control

Previously we have demonstrated that several structural features are crucial for the functionality of molecular field-effect transistors. The effect of additional structural aspects of molecular wires is explored. These include the type of, the thiol binding location on, and the chemical substitutions of a conjugated system. Pentacene, porphyrin, and the Tour-Reed devices are utilized as model systems. The thiol binding location is shown to have a varied effect on the transmission of a system depending on the molecular orbitals involved. Substitution by electron withdrawing and donating groups is illustrated to have a substantial effect on the transmission of single molecule devices. The substitution effect is either a simple energy shifting effect or a more complicated resonance effect, and can be used to effectively tune the electronic behavior of a single molecule field effect transistor.     

Dibenzoannelated tetrathienoacene: synthesis, characterization, and applications in organic field-effect transistors

Two structural isomers of six-fused-ring sulfur-containing molecules were synthesized as active materials for p-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Field-effect transistors based on these compounds were fabricated to investigate the relationships between structures and semiconductor properties.     

并五苯及其衍生物在有机场效应晶体管中的应用

有机场效应晶体管（organic field—effect transistors,OFETs）是以有机半导体材料作为有源层,通过电场控制电流的电子器件．与传统的无机半导体器件相比,由于其可应用于生产大面积、柔性、低成本电子设备而备受关注,在有机存储器件、有机太阳能电池、柔性平板显示和电子纸等众多领域具有潜在而广泛的应用前景．并苯类材料因其紧密的分子堆积及优异的半导体性能被广泛研究．其中,并五苯及其衍生物在场效应晶体管中表现出良好的性质,其效果甚至可以与非晶硅相媲美,但并五苯较差的溶解性及环境稳定性阻碍了其进一步应用．科研工作者通过对分子结构进行修饰改造设计,合成了一系列并五苯的衍生物,其不仅在稳定性、电学性能和溶解性方面有很大提高,还可以将该p-型半导体材料拓展到双极性及n-型半导体材料领域．本文对并五苯及其衍生物在有机场效应晶体管中的应用进行了较为全面的综述,期望对该领域的研究起到一定的推动作用．     

High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: toward N-type polythiophenes

New carbonyl-functionalized quaterthiophenes, 5,5' '-diperfluorophenylcarbonyl-2,2':5',2' ':5' ',2' '-quaterthiophene [DFCO-4T], 5,5' '-diphenyl-2,2':5',2' ':5' ',2' '-quaterthiophene [DPCO-4T], and a polymer having the same basic motif as DFCO-4T, poly{1,4-bis[(3'-n-octyl-2,2'-dithiophene)carbonyl]-2,3,5,6-tetrafluorobenzene} [P(COFCO-4T)], have been synthesized, characterized, and the crystal structures of the molecules determined. Field-effect transistors fabricated with vapor-deposited and solution-cast films of DFCO-4T exhibit very high Ion:Ioff current ratios (up to 108) and electron mobilities up to approximately 0.51 and approximately 0.25 cm2.V-1.s-1, respectively. Solution-cast blends of P(COFCO-4T) and DFCO-4T (1:1 weight ratio) exhibit an electron mobility of approximately 0.01 cm2.V-1.s-1 (Ion:Ioff = 104).     

Cyanation: providing a three-in-one advantage for the design of n-type organic field-effect transistors

The theoretical work presented here demonstrates that, when substitution takes place at appropriate positions, cyanation could be a useful tool for reducing the internal reorganization energy of molecules. A molecular-orbital-based explanation is given for this fundamentally important phenomenon. Some of the cyanated pentacene derivatives (nCN-PENT-n) not only have internal reorganization energies for electron transfer (lambda(-)) smaller than that of pentacene, but the lambda(-) values are even of the same magnitude as the internal reorganization energy for hole transfer (lambda(+)) of pentacene, a small value that few organic compounds have surpassed. In addition, cyanation raises the electron affinity of the parent compound and may afford good electronic couplings between neighboring molecules, because of its ability in promoting pi-stacking. For the design of high performance n-Type Organic field-effect transistors, high electron affinities, large intermolecular electronic couplings, and small reorganization energies are necessary. Cyanation may help in all three aspects. Two cyanated trialkylsilylethynyl pentacene derivatives with known pi-stacking structures are predicted to provide reasonably small internal reorganization energies, large electronic couplings, and high electron affinities. They have the potential to outperform N-fluoroalkylated dicyanoperylene-3,4:9,10-bis(dicarboximides) (PDI-FCN(2)) in terms of electron mobility.     

The design and synthesis of fused thiophenes and their applications in organic field-effect transistors

Fused thiophenes refer to oligothienoacenes in which several thiophenes are coupled together via twoor multi-positions and their derivatives. The synthesized organic semiconductors based on fused thiophenes exhibit excellent field effect properties due to their efficient intermolecular S…S interactions and π…π stacking. The performances of organic field-effect transistors (OFETs) depend not only on the materials but also on the devices. Such factors which influence the device performances as device structur...     

Tailoring and patterning of dielectric interfaces for the development of advanced organic field-effect transistors

The progress of organic field-effect transistors (OFETs) has led to the advent of a new area of printed and/or flexible electronics. In organic transistors and circuits, the interface between a gate insulator (GI) and an organic semiconductor (OS) plays a critical role on the electrical performance together with the functionality, the reliability and the long-term stability. In this review, we describe the basic principles of engineering a variety of the GI/OS interfaces for the development of advanced OFETs from the framework of the surface morphology and the physico-chemical surface interactions. We also discuss the dielectric interface modification and the resultant device performance of the OFETs.     

Polythiophene derivative with the simplest conjugated-side-chain of alkenyl: synthesis and applications in polymer solar cells and field-effect transistors

A polythiophene derivative with the simplest conjugated side chain, poly(3-hexy-1-enylthiophene) (P3HET), was synthesized by Stille self-coupling reaction. A comparative study of the newly synthesized polymer with poly(3-hexylthiophene) (P3HT), one of the most widely investigated optoelectronic materials, is presented. The effect of double bond (C=C) on the side chain toward thermal stability and optical and electronic properties was fully characterized by TGA, UV-vis absorption spectroscopy, photoluminescence spectroscopy, and cyclic voltammetry. The hole mobility of P3HET determined by the space-charge-limited current (SCLC) model is 6.7 x 10(-3) cm(2)/V s, which is comparable to P3HT with similar molecular weight and regularity and 1 order of magnitude higher than most conjugated-side-chain polythiophene derivatives. Polymer solar cells (PSCs) and field effect transistors (FETs) were fabricated respectively to exploit its potential applications in optoelectronic devices.     

Lamination method for the study of interfaces in polymeric thin film transistors

A method for the fabrication of polymeric thin-film transistors (TFTs) by lamination is described. Poly(dimethylsiloxane) stamps were used to delaminate thin films of semiconducting polymers from silicon wafers coated with a self-assembled monolayer (SAM) formed from octyltrichlorosilane. These supported films were laminated onto electrode structures to form coplanar TFTs. The fabrication process was used to make TFTs with poly(3-hexylthiophene), P3HT, and poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene], PQT-12. TFTs, where these polymers were laminated onto gate dielectrics coated with SAMs from octyltrichlorosilane, had effective field-effect mobilities of 0.03 and 0.005 cm2/(V s), respectively. TFTs where PQT-12 was laminated onto gate dielectrics that were not coated with a SAM also had mobility of 0.03 cm2/(V s). In contrast, TFTs fabricated by spin-coating PQT-12 onto the same structure had mobilities ranging from 10-3 to 10-4 cm2/(V s). These results suggest that the lower mobilities of polymer TFTs made with hydrophilic gate dielectrics are caused by molecular ordering in the semiconducting film rather than electronic effects of dipolar groups at the interface.     

Recent advances on the development of graphene-based field-effect transistors,electrochemical biosensors and electrochemiluminescence biosensors

Graphene, a honeycomb lattice of carbon material with single-atom-layer structure, demonstrates extraordinary mechanical, thermal, chemical and electronic properties. Thus, it has sparked tremendous interests in various fields, such as energy storage and conversion devices, field-effect transistors (FET), chemical sensors and biosensors. In this review, we will first focus on the synthesis method of graphene and the fabrication strategy of graphene-based materials. Subsequently, the construction of graphene-based biosensors are introduced, in which three kinds of biosensors are discussed in details, including the FET, electrochemical biosensors and electrochemiluminescence (ECL) biosensors. The performances of the state-of-the-art biosensors on the detection of biomolecules are also displayed. Finally, we also highlight some critical challenges remain to be solved and the development in this field for further research.     

Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors

We designed acene molecules attached to two semi-infinite metallic electrodes to explore the source-drain current of graphene and the gate leakage current of the gate dielectric material in the field-effect transistors (FETs) device using the first-principles density functional theory combined with the non-equilibrium Green's function formalism. In the acene-based molecular junctions, we modify the connection position of the thiol group at one side, forming different electron transport routes. The electron transport routes besides the shortest one are defined as the cross channels. The simulation results indicate that electron transport through the cross channels is as efficient as that through the shortest one, since the conductance is weakly dependent on the distance. Thus, it is possible to connect the graphene with multiple leads, leading the graphene as a channel utilized in the graphene-based FETs in the mesoscopic system. When the conjugation of the cross channel is blocked, the junction conductance decreases dramatically. The differential conductance of the BA-1 is nearly 7 (54.57 μS) times as large as that of the BA-4 (7.35 μS) at zero bias. Therefore, the blocked graphene can be employed as the gate dielectric material in the top-gated graphene FET device, since the leakage current is small. The graphene-based field-effect transistors fabricated with a single layer of graphene as the channel and the blocked graphene as the gate dielectric material represent one way to overcome the problem of miniaturization which faces the new generation of transistors.