基于六角格子光子晶体波导的高效全光二极管设计

提出了一种基于六角格子光子晶体波导微腔和Fabry-Perot(FP)腔非对称耦合的全光二极管结构, 它由一个包含非线性Kerr介质的高Q值微腔与一个光子晶体波导中的FP腔组成. 通过有限时域差分方法对其传输特性进行了仿真, 发现通过两腔的非对称耦合可以实现在特定光强度下的正向传输、反向截止的功能. 在靠近微腔方向光入射时, 特定强度的光可以激发非线性微腔的Kerr效应, 改变了Fano腔的共振频率, 从而变成透射状态. 而远离微腔方向光入射, 由于这个不对称的结构造成场局域的分布不对称, 激发微腔Kerr效应的光强还不够, 所以光不能透射. 所设计的全光二极管结构具有良好的性能参数: 最大透射率高和高透射比、光强阈值低和易于集成等.     

Single mode lasers based on monolithic integration of ridge waveguides with 2D photonic crystal waveguides

The monolithic combination of active light sources with photonic crystal (PC) waveguide components is a key building block for future highly integrated photonic circuits. We demonstrate the coupling of light from an InGaAs/AlGaAs ridge waveguide laser to a monolithically integrated 2D PC waveguide. The PC guide is formed by removing three or five rows in a triangular lattice of air rods etched into the semiconductor. A tapered ridge waveguide geometry is demonstrated to improve coupling efficiency, so that maximum output powers of up to 10 mW from the PC waveguide are achieved. The resulting coupled cavity laser shows single mode emission with side mode suppression ratios > 35 dB over a broad range of injection currents.     

基于杂质带的光子晶体矩形波形滤波器的实现

利用转移矩阵方法对基于杂质带的光子晶体矩形波形滤波器的实现进行了研究.除了可选择不同折射率的材料外,该滤波器还可通过调整光子晶体本身的结构参量来实现.对较平杂质带的形成机制做了具体的理论分析和解释,通过数值计算光子晶体原子耦合成光子晶体分子的过程,发现光子晶体原子的线宽与光子晶体分子线宽之间的相对大小是决定能否形成较平杂质带的重要参量.     

Photonic crystal tapers for ultracompact mode conversion

We have studied the coupling of a classic ridge waveguide with a two-dimensional photonic crystal (PC) waveguide, using finite-difference time-domain calculations. The ridge waveguide exhibits only a weak refractive-index confinement of light, as it is commonly used in buried-heterostructure or ridge-waveguide lasers. The light is coupled to a PC waveguide that consists of one missing row along the ?K direction in a triangular lattice of air cylinders in AlGaAs. We compare various designs for PC tapers with that of a classic taper and for butt coupling. The calculation yields high coupling efficiency that exceeds 80% for a 2.5-microm-long PC taper. In addition, the dependence of the efficiency on the PC air-fill factor and on alignment tolerances is analyzed.     

Optical characteristics of one-dimensional photonic crystals composed of high-aspect-ratio Si walls fabricated on V-grooved wafer

We demonstrate optical properties of one-dimensional photonic crystals (PC), which are fabricated using high-aspect-ratio etching on a V-grooved silicon wafer. The measured transmission spectrum has an obvious band gap; the suppression is over 30 dB. The quite small insertion loss of 1.9 dB is achieved by induced coupled plasma (ICP) cryogenic etching and direct coupling to the optical fiber aligned in the V-groove. We also successfully observed peaks originating from a localized cavity mode. Such a microcavity enables control of the light, which qualifies photonic crystal as a fundamental structure of optical functional devices. These results lead to achievement of integrated Si-based photonic circuits.     

用紧束缚方法描述光子晶体缺陷耦合的共振频率移动

通常采用含两个耦合参数的紧束缚近似，就能很好地描述光子晶体缺陷因耦合而导致的共振频率分裂.然而，缺陷耦合造成的共振频率移动，即包含奇数个缺陷的耦合系统的中央共振频率位置与原来单缺陷时的共振频率位置存在差异，则只有采用含三个耦合参数的严格紧束缚方法才能正确描述.根据耦合参数与共振频率的关系，利用三缺陷耦合系统的模拟计算结果确定了三个耦合参数的具体值，从而在理论上能够预言由任意个缺陷构成的耦合系统的共振频率的移动和分裂.理论预言与基于有限时域差分法的数值计算完全相符.     

Slow light performance enhancement of graphene-based photonic crystal waveguide

We propose a graphene-based photonic crystal (PC) slow light waveguide, which is realized by creating periodical air holes in a silicon layer to achieve spatially varying chemical potentials of graphene. The structure is optimized around 30 THz, and a large group index of 166.6 is obtained, with a very low propagation loss of ?2.1 dB/um. The corresponding normalized delay-bandwidth product reaches as high as 4.00. Furthermore, the slow light performance can be dynamically tuned by changing a bias voltage. The center frequency of the slow light waveguide can be tuned between 19.1 THz and 27.4 THz. Our results suggest that graphene-based PC structures are very promising for slow light devices.     

微光栅对SiC/光子晶体结构热辐射特性的调控

本文研究了一种SiC薄膜/光子晶体结构的热辐射特性,在SiC薄膜/光子晶体的界面处具有微光栅结构。利用RCWA方法数值模拟了该结构的热辐射特性,发现在SiC薄膜/光子晶体的界面处由于不同的电磁模态激发,导致其发射率在多个频段或方向具有很高的值,从而可通过利用不同电磁模态激发的条件及其相互作用实现对热辐射的调控。     

Experimental and computational study of visible light-induced photocatalytic ability of nitrogen ions-implanted TiO_2 nanotubes

Nitrogen-doped TiO2 nanotubes(TNTs)were prepared by ion implantation and anodic oxidation.The prepared samples were applied in photocatalytic(PC)oxidation of methyl blue,rhodamine B,and bisphenol A under light irradiation.To explore the influence of doped ions on the band and electronic structure of TiO2,computer simulations were performed using the VASP code implementing spin-polarized density functional theory(DFT).Both substitutional and interstitial nitrogen atoms were considered.The experimental and computational results propose that the electronic structure of TiO2 was modified because of the emergence of impurity states in the band gap by introducing nitrogen into the lattice,leading to the absorption of visible light.The synergy effects of tubular structures and doped nitrogen ions were responsible for highly efficient and stable PC activities induced by visible and ultraviolet(UV)light.     

RF-thermal-structural-RF coupled analysis on atravelling wave disk-loaded a ccelerating structure

The travelling wave (TW) disk-loaded accelerating structure is one of the key components in normal conducting (NC) linear accelerators, and has been studied for many years. In the design process, usually after the dimensions of each cell and the two couplers are finalized, the structure is fabricated and tuned, and then the whole structure RF characteristics are measured by using a vector network analyzer. Before fabrication, the whole structure characteristics (including RF, thermal and structural ones) are less simulated due to the limited capability of currently available computers. In this paper, we described a method for performing RF-thermal-structural-RF coupled analysis on a TW disk-loaded structure using only one PC. In order to validate our method, we first analyzed and compared our RF simulation results on the 3 m long BEPCⅡ structure with the corresponding experimental results, which shows very good consistency. Finally, the RF-thermal-structure-RF coupled analysis results on the 1.35 m long NSC KIPT linac accelerating structure are presented.     

Analysis of vertical coupling between a 2D photonic crystal cavity and a hydrogenated-amorphous-silicon-wire waveguide

We present an efficient means of light extraction from two-dimensional photonic crystal (2D PC) cavities with SiO₂ cladding. We propose a vertically coupled system consisting of a 2D PC cavity and a hydrogenated-amorphous-silicon (a-Si:H)-wire waveguide, which we theoretically investigate using the 3D finite-difference time-domain method. Light can be extracted with an efficiency of greater than 95% to both output ports of the a-Si:H-wire waveguide or extracted with an efficiency of greater than 90% to a single output port of the a-Si:H-wire waveguide with a reflector.     

Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layer

A photoconductivity (PC) of Si/Ge/Si structures with narrow Ge layer [thickness's 1.5 and 2 monolayers (ML)] on interband light intensity has been investigated for the different values of lateral voltage U, and temperature T. In contrast to the Si/Ge structure with 2 ML, where only monotonous PC growth was registered, for the 1.5 ML structure a stepped and a fluctuated PC were observed. These PC features are explained by a percolation of photoexcited carriers via the localized states induced by one monolayer scale Si/Ge interface roughnesses.     

可实现偏振无关单向传输的二维硅基环形孔光子晶体

基于光子晶体来构筑偏振无关光二极管在光电集成领域具有重大的应用价值.首先提出了一种环形孔光子晶体,能带结构显示其对横电及横磁模式同时展现出显著的方向带隙.以此构建了三角形状的环形孔光子晶体,利用时域有限差分法计算其透过谱及场分布图,发现该结构能实现偏振无关单向传输特性,然而正向透过率太低(约20%).进一步引入尺寸较小的三角形状的环形孔光子晶体构成光子晶体异质结结构,有效地提高了偏振无关单向传输性能,正向透过率增大了一倍.通过界面结构的调整,正向透过率进一步增大,优化后的环形孔光子晶体异质结结构能同时对类横电及类横磁模式入射光实现单向传输,且正向透过率达到了44%.     

The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional photonic crystals

An electrically driven, single-longitudinal-mode GaAs based photonic crystal (PC) ridge waveguide (RWG) laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma (ICP) etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.     

RF-thermal-structural-RF coupled analysis on a travelling wave disk-loaded accelerating structure

The travelling wave (TW) disk-loaded accelerating structure is one of the key components in normal conducting (NC) linear accelerators, and has been studied for many years. In the design process, usually after the dimensions of each cell and the two couplers are finalized, the structure is fabricated and tuned, and then the whole structure RF characteristics are measured by using a vector network analyzer. Before fabrication, the whole structure characteristics (including RF, thermal and structural ones) are less simulated due to the limited capability of currently available computers. In this paper, we described a method for performing RF-thermal-structural-RF coupled analysis on a TW disk-loaded structure using only one PC. In order to validate our method, we first analyzed and compared our RF simulation results on the 3 m long BEPCⅡ structure with the corresponding experimental results, which shows very good consistency. Finally, the RF-thermal-structure-RF coupled analysis results on the 1.35 m long NSC KIPT linac accelerating structure are presented.     

Effect of uniaxial anisotropy of left-handed layers on created surface waves in a one dimensional photonic crystal

We investigate theoretically the creation conditions of TE and TM polarized surface waves created at the interface between a homogeneous medium and one dimensional photonic crystal (1D PC). The 1D PC is composed of uniaxially anisotropic left-handed (LH) and isotropic right-handed (RH) layers. We show that the characteristics of surface waves created in the 1D PC are significantly different from those created in the structure composed of isotropic LH and RH layers. We also prove that the coexistence of TE and TM surface waves at the interface is possible in the same frequency domain. Moreover, it is shown that in this structure backward and forward surface waves are created in wider ranges of frequency and angle of incident light, in comparison with the structure in which the left-handed layers are isotropic.     

Modelling of photonic crystals for the design of photonic device based on SOI substrate

In this paper, we report a photonic integrated circuit (PIC), which consisting of a photonic crystal (PC) coupled by a dielectric waveguide to an optical fibre. The PC consists of a sequence of dielectric rods based on a silicon (Si) strip on a silicon dioxide (SiO₂) layer. The finite-difference time-domain (FDTD) method is reviewed and then used to model and predict the optical and the geometrical parameters used to design the fundamental elements of the PIC. The air gap width and the etching depth of the grooves are characterised. The coupling between the PC, and traditional dielectric waveguides is studied and coupling efficiency is evaluated. Diffractive losses are shown to affect strongly the performances of the proposed PIC. In addition, the effect of the air gap width on the diffractive losses and the coupling efficiency between successive neighbouring silicon sections is analysed. The field profile distribution in the structure is calculated and performed. The effects of an incorporated defect are studied, showing a high quality factor.     

光量子阱单滤波、多通道开关

在对称的光学厚度为1/4波长光子晶体体系中插入另一光学厚度为半波长的光子晶体形成光量子阱.通过控制入射光强可微小地改变此含缺陷光子晶体材料的介电常数,从而可形成高效的多通道光学开关,同时位于中心频率处的EM波保持高透射.研究表明该光学开关的阈值随缺陷光子晶体的层数增加而减小.     

Photoconductivity of Si/Ge/SiO<Subscript>x</Subscript> and Si/Ge/Si structures with germanium quantum dots

A nonmonotonic dependence of the lateral photoconductivity (PC) on the interband light intensity is observed in Si/Ge/Si and Si/Ge/SiO_x structures with self-organized germanium quantum dots (QDs): in addition to a stepped increase in PC, a stepped decrease in PC is also observed. The effect of temperature and drive field on these features of the PC for both types of structures with a maximum nominal thickness of the Ge layer (N_Ge) is studied. The results obtained are discussed in the context of percolation theory for nonequilibrium carriers localized in different regions of the structure: electrons in the silicon matrix and holes in QDs.     

基于光子晶体耦合波导的宽带慢光研究

提出了在完整三角晶格光子晶体中引入两线缺陷构成的耦合型波导结构。通过分析谱带形对不同结构参数的依赖关系,在最优化的光子晶体耦合波导中,找到了一种独特的、群速近似为零的谱带。通过对波导宽度的啁啾实现了不同频率光的色散补偿,最终得到了带宽为13.24nm、平均群折射率为28的宽带理想慢光,并进一步采用二维时域有限差分(FDTD)算法进行了验证。数值分析结果表明,高斯脉冲在耦合波导中传输后的相对时域展宽低于10%。