500 MHz LiNbO3 2×2光开关/调制器

本文描述一种采用铬-金电极的Ti:LiN_bO₃型2×2光开关/调制器。给出了该器件的设计参数,工艺条件,带单模尾纤的器件性能为:总插入损耗<8dB,开关电压<10V,串音<-15dB(λ=1.3μm)。本文讨论了器件的高频特性,测得器件的调制频率>500MHz。     

GaAs2×2Mach-Zehnder光波导开关调制器

报道了GaAs2×2非对称Mach-Zehnder光波导开关调制器的研制结果,分析了这种开关的工作原理和产生串音的因素.采用两个非对称X型耦合器代替传统的Y分支耦合器,得到了性能良好的X型3dB耦合器.λ=1.15μm时,器件的串音比小于-22.4dB,开关电压约1.2V.     

GaAs1×4Mach－Zehnder型光开关列阵研究

采用非对称Ｘ结耦合器设计并研制了ＧａＡｓ１×４Ｍａｃｈ－Ｚｅｈｎｄｅｒ型光开关列阵。简述了非对称Ｘ结和相应的光开关列阵的工作原理及器件的设计和制作过程。在波长为１．１５μｍ的光波下测量单元器件，得到了小于－２０ｄＢ的串音和小于１２Ｖ的开关电压，器件的光波导传输损耗约为７ｄＢ／ｃｍ。文中最后分析了导致器件中串音和损耗的各因素，并提出了可能的改进方法     

推挽极化Y型耦合器电光调制器的傅里叶建模与表征

设计了一种高线性度、无偏置聚合物Y型耦合器电光调制器,它由Y型分束器、Y型合束器、两节推挽极化电光耦合波导构成的电光区和一个微带行波电极构成,给出了器件结构并对其参数做了优化。通过对施加的电学调制信号做傅里叶变换并结合器件的传递函数,给出了一种新型数值方法来建模和表征器件的静态和动态特性,推导并得到了器件的状态函数、静态响应、调制响应、三阶内调响应等表达式。计算和分析结果显示,器件的半波电压为2.69V;3dB调制带宽约为143GHz;当调制系数为1%~10%时,基频信号对器件所产生三阶内调噪声的抑制比为60dB~90dB。所给出的理论和相关公式也可用于具有Y型耦合器结构的类似电光器件(如电光开关)的设计、建模和分析。     

新型结构超宽带LiNbO3电光调制器的优化设计

采用有限元软件对新型结构的铌酸锂电光调制器进行了优化设计.分析表明,采用脊波导和T型电极相结合的方式,能在保持高的特征阻抗的同时有效的实现相速匹配和有效降低电极损耗,从而较好的提高器件性能,是一种比较有潜力的调制器.利用优化结果,给出一种带宽达153 GHz,半波电压为8.55 V,特征阻抗为44 Ω的调制器的设计例子.     

聚合物串联耦合双环电光开关的优化

利用耦合模理论、电光调制理论和微环谐振理论,提出一个聚合物串联耦合双环电光开关器件模型,在1.55 μm谐振波长下对该器件进行了模拟和优化.结果为：微环波导芯截面尺寸为1.6×1.6 μm2,波导芯与电极间的限制层厚度为1.6 μm,电极厚度为0.15 μm,微环半径为15.2 μm,微环与信道间的耦合间距为0.14 μm,微环与微环间的耦合间距为0.6 μm,输出光谱的3 dB带宽约为0.06 nm,开关电压约为6 V左右,插入损耗约为2.2 dB,串扰约为－20 dB.所设计的双环电光开关较单环型电光开关不仅输出光谱更加平坦陡峭,非谐振光更弱,而且开关电压更低.     

反相电极聚合物定向耦合电光开关的优化设计

为了消除单节电极定向耦合电光开关的工艺误差对器件性能的不良影响,应用耦合模理论、电光调制理论、保角变换及镜像法,优化设计了一种两节交替反相电极聚合物定向耦合电光开关.模拟结果表明,该器件具有良好的开关性能:在1 550 nm的工作波长下,器件耦合区的长度为4 753.5 μm,交叉态电压为1.22 V,直通态电压为2.65 V,插入损耗小于2.21 dB,串扰小于-30 dB.通过微调状态电压,可以很容易地消除工艺误差对器件性能产生的不良影响.本文方法的设计结果与光束传播法的仿真结果符合得很好.     

垂直多结光伏型集成硅X射线探测器的实现和实验

介绍垂直多结器件的结构,给出了热迁移制结的工艺条件和结果;介绍了处理器件电极引线的隔离线方法,解决了经过热迁移掺杂后光刻电极套不准的难题,解决了把所有P型区域连接起来的问题,达到了敏感区金属零遮挡的目的.描述了利用展宽电极尺度的方法实现多单元器件的集成;给出了X光强与光电流电压之间的数学模型和几个重要参数,介绍了器件输出电压与X光强度之间的测量关系,理论与实际情况符合得非常好.最后对测量数据做了分析,证明器件有足够的灵敏度和分辨率.     

行波电极偏振无关干涉型光开关

提出并实现了一种Ｘ切ＬｉＮｂＯ３上的行波电极偏振无关干涉型光开关。达到的指标为：串间地－１４ｄＢ，偏振无关的开关电压为１９Ｖ，带宽达到６ＧＨｚ以上。进一步减小定向耦合器部分中光波导间距的分级步距，串音可达到－２０ｄＢ以下 。     

两节推挽极化波导Y型耦合器电光开关特性分析（英文）

针对两节独立反相集总电极聚合物Y型耦合器电光开关响应速度慢的问题,通过对该器件两节电光区的波导进行推挽极化,设计了一种无偏置行波电极高速电光开关.为了获得低的驱动电压、良好的阻抗匹配和光波与微波间较小的折射率失配,对电极参数做了设计和优化.通过对施加的方波开关信号做傅里叶变换并结合行波传输线理论,给出了一种用于建模和表征器件高频响应的解析分析法.对该器件的数值计算结果表明,在1 550nm中心工作波长下,其3dB状态电压为0 V,开关电压为2.68V,上分支状态电压和下分支状态电压分别为-1.34V和+1.34V,器件的插入损耗和串扰分别小于3.55和-30dB,10%~90%上升时间和下降时间均为3.90ps,截止开关频率可达128.2GHz.     

间隙长度对气体火花开关静态性能的影响

针对快放电直线脉冲变压器驱动源初级储能开关,调节开关气压,进行相同自击穿电压下不同间隙长度的开关自击穿实验。通过监测自击穿电压分布规律变化,研究开关间隙长度对开关自击穿特性的影响。结果表明,当开关间隙长度较大时,电极表面粗糙度较小,表明电极烧蚀程度较低。开关间隙长度为6 mm时,开关自击穿电压分散性达到最小,自击穿电压分布符合高斯函数,间隙长度大于6 mm时自击穿电压分布符合极限函数。适当增加开关间隙长度使自击穿电压分布失去对称性,有利于开关在低欠压比下获得更好的静态性能。针对电极结构,选择开关间隙长度为6~9 mm时能够获得最佳的静态性能。初步分析,引起开关自击穿电压分布发生改变的原因是电场强度的改变对阴极电子发射产生了影响。     

Ultra-Broad-Band LiNbO3 Electro-Optic Modulators with Novel Complex Electrode

The characteristics of Z- cut LiNbO3 optical modulators with novel complex electrode are discussed by using the finite element method (FEM) and studied experimentally in this paper. The travelling wave electrode consists of upper and lower parts. It can easily realize phase velocity matching between microwave and optical wave and drastically reduce microwave electrode loss. An electrooptic modulator with larger than 100 GHz bandwidth and half wave voltage 6 V is designed, fabricated and measured. Vπ is 5.1 V and the attenuation coefficient a0 is 0.3 dB/(cm· GHz1/2 ). The experimental results show that the modulator has great potentiality for expanding bandwidth.     

Ultra-Broad-Band LiNbO_3 Electro-Optic Modulators with Novel Complex Electrode

1 IntroductionFOr LiNbO3 modulators, the bandwidth is mainly restricted by the microwaveattenuation of the travelling--wave electrode and the phase velocity ndsmatch betWeenmicrowave and optical wave in the devices. When the phase velocity matching issatisfied it is very i~rtant to decrease the microwave attenuation for expandingbandwidth. The thecrowave propagating lOSS is the main source Of the microwaveattenuation in the interactive region. The larger the cross-sectional area or the lOn…     

15GHz马赫－陈德尔型Ti：LiNbO_3行波幅度电光调制器

比较了四种马赫－陈德尔调制器的结构特性，表明Ｚ切共面波导（ＣＰＷ）是最好的一种结构。用阶跃倒相电极设计了新型电光光波导幅度调制器，研制了包装式带尾光纤的有５段例相电极的马赫－陈德尔调制器。在１．５３２μｍ波长上，该器件调制带宽为１４．８ＧＨｚ，半波电压为１４Ｖ，消光比为２１．３ｄＢ，光纤－器件－光纤插入损耗７．６ｄＢ。     

Novel optic-fiber switches based on the wobble-type MEMS electromagnetic microactuator

Some novel optic-fiber switches based on an MEMS electromagnetic microactuator are developed in this paper and their design, fabrication and performance are described. A new kind of wobble-type MEMS electromagnetic microactuator is successfully developed, which can drive mirrors to enter or leave the optical path of a switch. It is layered, composed of two stators and one wobble disc, which improve the output torque of the actuator. Finally, 1×2, 2×2, 1×4 and 1×8 single mode optic-fiber switches, which have been fabricated, are measured. The operating voltage is less than 8 V, switching time is less than 5 ms, insertion loss is less than 0.8 dB, crosstalk is 60 dB, and extinction ratio is 60 dB. These optic-fiber switches show a promising future in optical fiber communication systems.     

锯齿波频率对介质阻挡放电光谱特性的影响

采用微间隙平行平板介质阻挡放电(DBD)装置,以氩气作为工作气体,研究了锯齿波激励下DBD的放电图像、发光信号、发射光谱与锯齿波频率的关系。研究发现随锯齿波频率增加,DBD会从均匀模式(低于10 kHz),经历微放电丝与均匀放电共存,并最终过渡到微放电丝占据全部的电极区(频率高于35 kHz)。外加电压和发光波形表明,锯齿波频率较低时的均匀放电对应高占空比的阶梯放电。随频率增大,出现微放电丝后,发光波形呈现多脉冲形式,且电压半周期中的发光脉冲个数随着锯齿波频率的增大而减小。当锯齿波频率高于35 kHz时,每半个电压周期的发光脉冲个数减小为一个(单脉冲放电)。通过对放电的发射光谱进行研究,发现发射光谱中包含氮分子的第二正带系(C3Π_u→B3Π_u),OH(A2Σ+→X2Π)和ArI的特征谱线。研究表明OH(308.8 nm)和ArI(750.4 nm)的谱线强度均随锯齿波频率的增大而增大。     

Development of Ionization waves in an Atmospheric‐Pressure Micro‐Plasma Jet

Present study investigated the development of ionization waves in an atmospheric‐pressure plasma jet. Plasma was ignited by 6 kHz sinusoidal voltage applied to a cylindrical electrode surrounding the 500 μm inner diameter quartz tube and positioned 10 mm upstream from the tube orifice. The plasma current was observed using a plane electrode placed 20 mm downstream from the tube orifice. The spatial development of ionization waves was monitored by registering the optical emission along the axis of the tube. At voltages in range of 5.5 ‐ 7.5 kV only one pulse occurred during positive half‐period while at higher voltages the number of pulses increased up to 6 ‐ 7 per half‐period. The development of the first and subsequent pulses during one half‐period was essentially different. For the first pulse the sharp rise of optical emission characterizing the front of the ionization wave occurred initially near the high‐voltage electrode and moved towards the tube orifice and further in the He jet. The propagation of ionization wave coincided with the rise of the displacement current measured at the plane electrode. For subsequent ionization waves of the same half‐period, the emission occurred initially at the tube orifice and the ionization wave developed simultaneously in two directions: towards the high‐voltage electrode and towards the end of the jet. The velocity of ionization wave inside the tube was in range of (2. 5 ‐ 5.0) · 10⁴ m/s for first wave and as high as 1.2 · 10⁵ m/s for subsequent waves. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High-voltage microwave-triggered switches

The operation of three types of experimental high voltage microwave-triggered switches developed by the University of St. Andrews and DRA Malvern is described. The POLOTRON and the microwave-triggered three-gap-switch (MTGS) are closing switches and the microwave-triggered tacitron, (MITTON) is a closing and opening switch. The switches are robust hydrogen thyratron type devices, with an annular geometry, where closure is achieved using microwave fields to ionize the low pressure gas within the switch. In the case of the MITTON, the switch is opened by the application of a negative bias voltage to a large area metal grid. The POLOTRON is designed for fast switching applications. Its annular geometry results in an inherent low inductance and anode fall-times of less than 3 ns have been measured for a cold-cathode POLOTRON at charging voltages up to 30 kV. The MTGS, also a cold cathode switch, was developed for use in the DUOTRON transient generator (a voltage doubler). Output voltages of up to 16 kV have been measured at repetition rates of 90 Hz. The MITTON has closing characteristics similar to the POLOTRON and anode voltage fall-times of less than 10 ns have been measured at voltages up to 16 kV. Opening times of 0.5 μs have been achieved with an anode voltage of 10 kV and current of 10 A