Assessment of the possibility of determination of the electrophysical characteristics of CdxHg1–xTe p+–n-structures using differential hall measurements

The process of reconstuction of the distribution profile of hole concentration in the p ⁺–n structure by the method of differential Hall measurements upon implantation of ions As⁺ (Е = 190 keV, D = 3.10¹⁴ cm^-2, j = 0.025 μA/cm²) into epitaxial films Cd _x Hg_1–x Te for x ~ 0.2, with the initial electron concentration and mobility n = 10¹⁴ cm^-3 and μ = 2∙10⁵ cm²∙V^–1∙s^–1 is numerically simulated. The dependences of degree of reconstruction of the hole-concentration distribution profile on the depth of a shunting n-layer and magnitude of the magnetic field, at which the electrophysical parameters of the p ⁺–n structure are measured, are calculated. The dependence of the limiting magnetic field determining the magnetic-field range for measurements on the n-layer depth is found. It is shown that in calculations one should use the conduction values measured at the same magnetic fields as the Hall coefficients for determination of the holeconcentration distribution profile using the Petritz model.     

Structural and optical properties of porous silicon prepared from a p +-epitaxial layer on n-Si(111)

The structural and optical properties of porous silicon prepared by anodic etching of an n-Si(111) wafer with a p ⁺-homoepitaxial layer on one side are studied by scanning electron microscopy and multiple-crystal X-ray diffraction. A considerable difference between the microstructures on the sides of the wafer is found. Upon aging for 4.5 months, diffraction peaks of the por-Si structures shift from that of the substrate by δθ = ?42″ for the n-Si porous layer and ?450″ for the p ⁺-Si porous layer. The photoluminescence band associated with the p ⁺-layer is twice as narrow as the band associated with the n-layer and is shifted toward shorter wavelengths (higher energies) by 0.4 eV, with the intensities of the bands being the same.     

The Influence of Resistance of the Epitaxial-Film Volume on the Capacity-Voltage Characteristics of the HgCdTe/AOF and HgCdTe/SiO<Subscript>2</Subscript>/Si<Subscript>3</Subscript>N<Subscript>4</Subscript> MIS Structures

The dependence of active and reactive components of the admittance of MIS structures based on heteroepitaxial Hg_0.78Cd_0.22Te produced by molecular-beam epitaxy as a function of bias voltage is experimentally studied in the frequency range 1 kHz − 1 MHz. The resistance of the epitaxial-film volume is shown to significantly affect the measured admittance in the case where the electron concentration in HgCdTe is up to 5·10¹⁴ cm^{− 3}, and this is manifested in a number of features of the capacity-voltage characteristics. The resistance of the epitaxial-film volume is found for the samples with different initial conductivity and for the samples with graded-band subsurface layers. The techniques are proposed that make it possible to avoid the influence of volume resistance on the admittance of MIS structures on the basis of heteroepitaxial HgCdTe. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 31–37, June, 2005.     

Effect of high doses of N<Superscript>+</Superscript>, N<Superscript>+</Superscript> + Ni<Superscript>+</Superscript>, and Mo<Superscript>+</Superscript> + W<Superscript>+</Superscript> ions on the physicomechanical properties of TiNi

The surface layer of an equiatomic TiNi alloy, which exhibits the shape memory effect in the martensitic state, is modified with high-dose implantation of 65-keV N⁺ ions (the implantation dose is varied from 10¹⁷ to 10¹⁸ ions/cm²). TiNi samples are implanted by N⁺, Ni⁺-N⁺, and Mo⁺-W⁺ ions at a dose of 10¹⁷–10¹⁸ cm⁻² and studied by Rutherford backscattering, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction (glancing geometry), and by measuring the nanohardness and the elastic modulus. A Ni⁺ concentration peak is detected between two maxima in the depth profile of the N⁺ ion concentration. X-ray diffraction (glancing geometry) of TiNi samples implanted by Ni⁺ and N⁺ ions shows the formation of the TiNi (B2), TiN, and Ni₃N phases. In the initial state, the elastic modulus of the samples is E = 56 GPa at a hardness of H = 2.13 ± 0.30 GPa (at a depth of 150 nm). After double implantation by Ni⁺-N⁺ and W⁺-Mo⁺ ions, the hardness of the TiNi samples is ∼2.78 ± 0.95 GPa at a depth of 150 nm and 4.95 ± 2.25 GPa at a depth of 50 nm; the elastic modulus is 59 GPa. Annealing of the samples at 550°C leads to an increase in the hardness to 4.44 ± 1.45 GPa and a sharp increase in the elastic modulus to 236 ± 39 GPa. A correlation between the elemental composition, microstructure, shape memory effect, and mechanical properties of the near-surface layer in TiNi is found.     

Use of cluster secondary ions for minimization of matrix effects in the SIMS depth profiling of La/B4C multilayer nanostructures

The elemental composition of La/B₄C multilayer metal structures is studied using SIMS on a TOF.SIMS-5 experimental setup. Analysis conditions that make it possible to considerably enhance the depth resolution are found. They include using low-energy O₂⁺ and Cs⁺ ions for sputtering and cluster secondary ions for registering matrix elements. The roughness evolution in the etching crater region is studied in a layer-by-layer analysis. It is shown that, at an incidence angle of 45° for sputtering ions, the rms roughness increases slightly (from an initial value of 0.5–0.7 nm) in the etching crater of the (La/B₄C)₇₀/Si structure at a depth of 0.5 μm. The profiles of elements in multilayer structures grown using two different types of magnetron systems with stationary and high-frequency discharges are compared. The main contaminations in the structures are determined.     

Effect of dipole structures on field emission of wide-gap semiconductor emitters

It is shown that dipole structures placed in a thin (less than 1 nm) near-surface layer of a high-resistivity field emitter produce small domains on the emitting surface in which the electric field may exceed 10⁸ V/cm. In these domains, the emitter surface potential is positive, providing effective electron transport from inside the emitter to the emission boundary. Optimal dipole orientations ensuring maximal electric fields at the surface are found. When the surface density of dipoles localized in the near-surface layer is on the order of 10⁶ cm⁻², one can expect an emitter-averaged emission current density of higher than 1 A/cm². The dipole structures in the near-surface layer may persist owing to incorporated impurity molecules having a dipole moment or result from a random combination of positively charged ionized impurities and electrons captured by deep traps. Trap charging/discharging asymmetry accounts for the hysteresis of the emission I–V characteristics.     

The effect of sub-band gap photon illumination on the properties of GaN layers grown on Si(111) by MBE

Nanostructured GaN layers are fabricated by laser-induced etching processes based on heterostructure of n-type GaN/AlN/Si grown on n-type Si(111) substrate. The effect of varying laser power density on the morphology of GaN nanostructure layer is observed. The formation of pores over the structure varies in size and shape. The etched samples exhibit dramatic increase in photoluminescence intensity compared to the as-grown samples. The Raman spectra also display strong band at 522 cm⁻¹ for the Si(111) substrate and a small band at 301 cm⁻¹ because of the acoustic phonons of Si. Two Raman active optical phonons are assigned h-GaN at 139 and 568 cm⁻¹ due to E2 (low) and E2 (high), respectively. Surface morphology and structural properties of nanostructures are characterized using scanning electron microscopy and X-ray diffraction. Photoluminance measurement is also taken at room temperature by using He–Cd laser (λ = 325 nm). Raman scattering is investigated using Ar⁺ Laser (λ = 514 nm).     

Raman scattering in a near-surface n-GaAs layer implanted with boron ions

Structure in the Raman scattering spectra of near-surface n-GaAs layers (n=2×10¹⁸ cm⁻³) implanted with 100 keV B⁺ ions in the dose range 3.1×10¹¹–1.2×10¹⁴ cm⁻² is investigated. The qualitative and quantitative data on the carrier density and mobility and on the degree of amorphization of the crystal lattice and the parameters of the nanocrystalline phase as a result of ion implantation are obtained using a method proposed for analyzing room-temperature Raman spectra. Fiz. Tverd. Tela (St. Petersburg) 41, 1495–1498 (August 1999)     

The effects of surface modification on the electrical properties of p–n+ junction silicon nanowires grown by an aqueous electroless etching method

Although the aqueous electroless etching (AEE) method has received significant attention for the fabrication of silicon nanowires (SiNWs) due to its simplicity and effectiveness, SiNWs grown via the AEE method have a drawback in that their surface roughness is considerably high. Thus, we fabricated surface-modified p–n ⁺ junction SiNWs grown by AEE, wherein the surface roughness was reduced by a sequential processes of oxide growth using the rapid thermal oxidation (RTO) cycling process and oxide removal with a hydrofluoric acid solution. High-resolution transmission electron microscopy analysis confirmed that the surface roughness of the modified SiNWs was significantly decreased compared with that of the as-fabricated SiNWs. After RTO treatment, the wettability of the SiNWs had dramatically changed from superhydrophilic to superhydrophobic, which can be attributed to the formation of siloxane groups on the native oxide/SiNW surfaces and the effect of the nanoscale structure. Due to the enhancement in surface carrier mobility, the current density of the surface-modified p–n ⁺ junction SiNWs was approximately 6.3-fold greater than that of the as-fabricated sample at a forward bias of 4 V. Meanwhile, the photocurrent density of the surface-modified p–n ⁺ junction SiNWs was considerably decreased as a result of the decreases in the light absorption area, light absorption volume, and light scattering.     

Surface effect on the reverse current of Al x Ga1−x Sbp−n structures

The effect of an invertedp-region along the free surface ofn-Al _x Ga_1−x Sb on the reverse current ofp−n structures from the given solid solution is analyzed. Expressions which describe “collection” of the inverted layer current on the cylindrical surface of ann-region are discussed. The contribution of the near-surface and bulk components to the reverse current ofp−n structures with a semi-infiniten-region is estimated. For structures with a two-layern-region of finite thickness we have calculated the dependence of the near-surface current on the voltage across thep−n structure, the thickness of then-region, and its composition and doping level. We have compared the calculated current-voltage characteristics with experiment using a Al_0.15Ga_0.85Sbp−n structure as an example. Tomsk State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 42, No. 1, pp. 34–40, January, 1999.     

Influence of electron irradiation of the NOVER-1 vacuum resist on its resistance to ionbeam etching

The influence of electron irradiation on the resistance of the NOVER-1 resist to ion-beam etching is studied. Etching is carried out by argon ions with energies between 300 and 2500 eV. It is found that, depending on the energy and angle of incidence of the ions on the surface of the resist, electron irradiation may either speed up or slow down the NOVER-1 etching. A clear correlation is observed between the penetration depth of the ions in the resist and the influence of the electron irradiation on the resistance of the resist to etching. At ion energies higher than 500 eV (ion penetration depth ≳3.5 nm) the resistance decreases, passes through a minimum at low electron irradiation doses, and returns to the etching rate of the initial resist at high doses. For glancing etching angles (∼ 70° to the surface normal) and low ion energies (300 eV), i.e., small ion penetration depths (≲2.5 nm), an electron-irradiated resist is etched more slowly than the initial resist at all the electron irradiation doses studied. This effect may be used to enhance the resistance of resist structures whose height exceeds their width, which in this case is determined mostly by the rate of etching of the inclined facets. Zh. Tekh. Fiz. 68, 140–142 (January 1998)     

FMR and TEM Studies of Co and Ni Nanoparticles Implanted in the SiO<Subscript>2</Subscript> Matrix

Fused silica plates have been implanted with 40 keV Co⁺ or Ni⁺ ions to high doses in the range of (0.25–1.0) × 10¹⁷ ions/cm², and magnetic properties of the implanted samples have been studied with ferromagnetic resonance (FMR) technique supplemented by transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy. The high-dose implantation with 3d-ions results in the formation of cobalt and nickel metal nanoparticles in the irradiated subsurface layer of the SiO₂ matrix. Co and Ni nanocrystals with hexagonal close packing and face-centered cubic structures have a spherical shape and the sizes of 4–5 nm (for cobalt) and 6–14 nm (for nickel) in diameter. Room-temperature FMR signals from ensembles of Co and Ni nanoparticles implanted in the SiO₂ matrix exhibit an out-of-plane uniaxial magnetic anisotropy that is typical for thin magnetic films. The dose and temperature dependences of FMR spectra have been analyzed using the Kittel formalism, and the effective magnetization and g-factor values have been obtained for Co- and Ni-implanted samples. Nonsymmetric FMR line shapes have been fitted by a sum of two symmetrical curves. The dependences of the magnetic parameters of each curve on the implantation dose and temperature are presented.     

Density functional study of structural and electronic properties of Al<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>P (2 ≤ <Emphasis Type="Italic">n</Emphasis> ≤ 12) clusters

Low-lying equilibrium geometric structures of Phosphorus-doped aluminum cluster Al _n P (n = 2–12) clusters obtained by an all-electron linear combination of atomic orbital approach, within spin-polarized density functional theory, are reported. The binding energy, dissociation energy, and stability of these clusters are studied within the local spin density approximation (LSDA) and the three-parameter hybrid generalized gradient approximation (GGA) due to Becke-Lee-Yang-Parr (B3LYP). Ionization potentials, electron affinities, hardness, and static polarizabilities are calculated for the ground-state structures within the GGA. It is observed that symmetric structures with the P atom occupying a peripheral position are lowest-energy geometries of Al _n P (n = 2, 4–11), while the P impurities of Al₃P and Al₁₂P prefer to occupy internal sites in the aluminum clusters. Generalized gradient approximation extends bond lengths as compared to the LSDA lengths. The odd-even oscillations in the dissociation energy, the second differences in energy, the HOMO–LUMO gaps, the ionization potential, the electron affinity, and the hardness are more pronounced within both GGA and LSDA. The stability analysis based on the energies clearly shows the clusters with an even number of valence electrons are more stable than clusters with odd number of valence electrons.     

Radiation defects introduced by MeV electrons in argon implanted MOS structures

The influence of MeV electron irradiation on the interface states of argon implanted thin oxide MOS samples has been studied by the thermally stimulated current (TSC) method. The oxide thickness of the structures is 18 nm. Two groups of n-type MOS structures non-implanted and implanted with 20 keV Ar⁺ ions and a dose of 5×10¹² cm⁻² are examined. Both groups are simultaneously irradiated by 23 MeV electrons with doses of 1.2×10¹⁶, 2.4×10¹⁶ or 6.0×10¹⁶ el/cm². The energy position and density of the interface states (generated by electron irradiation, ion implantation or both treatments of the samples) are determined. It is shown that MeV electron irradiation decreases the concentration of interface states (like an oxygen-vacancy and di-vacancy) slightly and creates additional interface states (like an impurity-vacancy) at the Si–SiO₂ interface of argon implanted MOS structures.     

Influence of argon ion bombardment on the formation of intermetallic compounds in the nickel-aluminum system

The formation of Ni _x Al _y intermetallic compounds in two-layer (Ni/Al) structures (nickel films deposited on aluminum substrates in vacuum) under bombardment by Ar⁺ ions has been studied experimentally. The method based on Rutherford backscattering of He⁺ ions is used to demonstrate that argon ion bombardment causes the formation of intermetallic compounds in the near-surface layer. The thickness of the intermetallic layer formed in the near-surface region substantially exceeds the projective ion path. The composition and thickness of the intermetallic layer depend mainly on the implantation dose and the substrate temperature, rather than on the ion current density. In the intermetallic layer, the content of nickel increases with increasing temperature. It has been established that, in the absence of bombardment, intermetallic phases are not observed at temperatures lower than T = 400°C and that, in the presence of bombardment, the Ni₃Al intermetallic layer arises at a temperature of 320°C.     

Influence of Cr<Superscript>+</Superscript> ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/CrSi<Subscript>2</Subscript>/Si(111) heterostructures

The effect of pulsed ion-beam annealing on the surface morphology, structure, and composition of single-crystal Si(111) wafers implanted by chromium ions with a dose varying from 6 × 10¹⁵ to 6 × 10¹⁶ cm⁻² and on subsequent growth of silicon is investigated for the first time. It is found that pulsed ion-beam annealing causes chromium atom redistribution in the surface layer of the silicon and precipitation of the polycrystalline chromium disilicide (CrSi₂) phase. It is shown that the ultrahigh-vacuum cleaning of the silicon wafers at 850°C upon implantation and pulsed ion-beam annealing provides an atomically clean surface with a developed relief. The growth of silicon by molecular beam epitaxy generates oriented 3D silicon islands, which coalesce at a layer thickness of 100 nm and an implantation dose of 10¹⁶ cm⁻². At higher implantation doses, the silicon layer grows polycrystalline. As follows from Raman scattering data and optical reflectance spectroscopy data, semiconducting CrSi₂ precipitates arise inside the silicon substrate, which diffuse toward its surface during growth.     

Characteristics of the formation of radiation defects in silicon structures

The method of deep-level transient spectroscopy is used to investigate aspects of the formation of radiation defects in silicon p ⁺-n diffusion structures when bombarded by accelerated electrons. It is shown that for base thicknesses of the p ⁺-n structures in the range 0.2–0.6mm a substantial change in the concentration of the radiation defects formed in this way is observed, having a maximum at 0.25 mm. Below 0.2 mm and above 0.6 mm the concentration of radiation defects exhibits a weak dependence on base thickness. The observed effect is explained by variation of the relative concentrations of vacancies and interstitial silicon atoms in the base during formation of p ⁺-n pairs. Zh. Tekh. Fiz. 69, 121–123 (January 1999)     

Sheath and electron density dynamics in the normal and self-pulsing regime of a micro hollow cathode discharge in argon gas

A microplasma is generated in the microhole (400 μm diameter) of a molybdenum-alumina-molybdenum sandwich (MHCD type) at medium pressure (30–200 Torr) in pure argon. Imaging and emission spectroscopy have been used to study the sheath and electron density dynamics during the stationary normal regime and the self-pulsing regime. Firstly, the evolution of the microdischarge structure is studied by recording the emission intensity of the Ar (5p[3/2]₁–4s[3/2]₁)_{1}) line at 427.217 nm, and Ar⁺ (4p′ ²P_3/2–4s′ ²D_5/2)_{5/2}) line at 427.752 nm. The maximum of the Ar⁺ line is located in the vicinity of the sheath-plasma edge. In both regimes, the experimental observations are consistent with the position of the sheath edge calculated with an ionizing sheath model. Secondly, the electron density is recorded by monitoring the Stark broadening of the H_b_\beta-line. In the self-pulsing regime at 150 Torr, the electron density reaches its maximum value of 4 × 10¹⁵ cm^-3, a few tens of ns later than the discharge current maximum. The electron density then decays with a characteristic decay time of about 2 μs, while the discharge current vanishes twice faster. The electron density in the steady-state regime is two orders of magnitude lower, at about 6–8 × 10¹³ cm^-3.     

Combined SIMS,AES, and XPS investigations of tantalum oxide layers

Thick layers of tantalum oxide prepared by thermal and anodic oxidation have been studied by combined SIMS, AES, and XPS during depth profiling by 3keV Ar⁺ ion sputtering. The chemical composition of these films is revealed by the OKLL and O 1s signals and by the “lattice valence” parameter determined from the TaO _n ^± intensities. Thus the anodic film consists of a contamination layer, an oxygen-rich reactive interface and a thick homogeneous oxide layer followed by an interface to the Ta metal. The thermal oxide shows an oxygen concentration decreasing with depth and a broad oxide-metal interface. In both cases, carbon contamination (carbide) prevents the application of the valence model to the clean Ta substrate. The sputtering yield of the oxides was found to be 0.6 Ta₂O₅/ion.