Formation of Ti1–x Si x and Ti1–x Si x N films by magnetron co-sputtering

The paper reports on surface morphology, structure and microhardness of TiSi–N films formed by cosputtering from two target-facing unbalanced magnetrons, equipped with pure Ti and Si targets, on an unheated substrate rotating in front of both targets. The ratio Si/Ti in the TiSi–N film was achieved by modifying the magnitude of currents in the individual magnetrons and by the addition of nitrogen to the film. The rotation of the substrate has a strong effect on the film deposition rate and its morphology. The deposition rate is 3 times lower than that of the film deposited on a stationary substrate. The surface roughness of a polycrystalline Ti film deposited on the rotating substrate is considerably higher than that on a stationary substrate. On the contrary, the surface of an amorphous Si film is smooth and there is no difference between the roughness of Si films sputtered on stationary and on rotating substrates. The hardness of the film increases with increasing Si content and with the addition of nitrogen to the TiSi film. The Ti(26 at.%)Si(8.5 at.%)N(65 at.%)-film sputtered on an unheated rotating steel substrate, held at a floating potential, exhibited the best result with a hardness of 29 GPa.     

Oxidation of Si(100)2x1 and Gex Si1−x (100)2x1

High resolution electron energy loss Spectroscopy (HREELS), X-ray photoelectron Spectroscopy (XPS) and low energy electron diffraction (LEED) have been used to characterize initial stages of oxidation of Si(100)2x1 and Ge_x Si_1−x (100)2x1 surfaces. Different oxidation stages of Si were identified by measuring Si 2p core level shifts and characteristic vibrations of Si-O-Si complexes. The latter may be described in the framework of continuous random network models.Then,from the experimentally determined frequencies, force constants,average bond angles and bond lengths are determined. Complementary,marker experiments with atomic hydrogen as a probe in conjunction with HREELS were used to determine the local, atomic structure for different stages of oxidation from chemical shifts of Si-H and Ge-H stretching mode intensities, respectively.     

Mössbauer and magnetization studies on the ferromagnet Fe3−x Ru x Si

⁹⁹Ru and⁵⁷Fe Mössbauer spectroscopic studies were carried out on ternary intermetallic compounds containing ruthenium, Fe_3–x Ru _x Si, within the concentration range 0.1x1.5. Magnetization of the samples was also measured in the temperature range between 4 K and room temperature.⁹⁹Ru Mössbauer spectra ofx=0.5 and 1.0 were fitted satisfactorily with a broad component ofH _hf, the peak positions of which were 340 and 270 kOe, respectively.     

Anomalous spin relaxation and quantum criticality in Mn1 − x Fe x Si solid solutions

We report results of the high frequency (60 GHz) electron spin resonance (ESR) study of the quantum critical metallic system Mn_{1 ? x} Fe _x Si. The ESR is observed for the first time in the concentration range 0 < x < 0.24 at temperatures up to 50 K. The application of the original experimental technique allowed carrying out line shape analysis and finding full set of spectroscopic parameters, including oscillating magnetization, line width and g factor. The strongest effect of iron doping consists in influence on the ESR line width and spin relaxation is marked by both violation of the classical Korringa-type relaxation and scaling behavior. Additionally, the non-Fermi-liquid effects in the temperature dependence of the ESR line width, which may be quantitatively described in the theory of Wölfle and Abrahams, are observed at quantum critical points x* ～ 0.11 and x _c ～ 0.24.     

Quantum bicriticality in Mn1 − x Fe x Si solid solutions: Exchange and percolation effects

The T-x magnetic phase diagram of Mn_{1 ? x} Fe _x Si solid solutions is probed by magnetic susceptibility, magnetization and resistivity measurements. The boundary limiting phase with short-range magnetic order (analogue of the chiral liquid) is defined experimentally and described analytically within simple model accounting both classical and quantum magnetic fluctuations together with effects of disorder. It is shown that Mn_{1 ? x} Fe _x Si system undergoes a sequence of two quantum phase transitions. The first “underlying” quantum critical (QC) point x* ～ 0.11 corresponds to disappearance of the long-range magnetic order. This quantum phase transition is masked by short-range order phase, however, it manifests itself at finite temperatures by crossover between classical and quantum fluctuations, which is predicted and observed in the paramagnetic phase. The second QC point x _c ～ 0.24 may have topological nature and corresponds to percolation threshold in the magnetic subsystem of Mn_{1 ? x} Fe _x Si. Above x _c the short-range ordered phase is suppressed and magnetic subsystem becomes separated into spin clusters resulting in observation of the disorder-driven QC Griffiths-type phase characterized by an anomalously divergent magnetic susceptibility χ ～ 1/T ^ξ with the exponents ξ ～ 0.5–0.6.     

Elastic stress fields caused by a dislocation in Ge x Si1−x /Si film-substrate system

The elastic stress fields caused by a dislocation in Ge_xSi_(1-x) epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system,the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then,the unknown image dislocation densities are solved by using boundary conditions,i.e.,traction free conditions on the free surface. Numerical simulation focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness,position of the dislocation and crystallographic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress σxy,σyy,σyz on the interface are influenced by the layer thickness,but the former is stronger. In contrast to the weak dependence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.     

Subsurface localization of charge carriers in Si/SiO2/Si x Ge1 − x nanostructures

Analysis of the capacitance-voltage (C-V) characteristics reveals an elevated concentration of charge carriers under the surface of a silicon substrate due to the formation of elastically stressed regions induced in the substrate by Si _x Ge_{1 ? x} nanoislands grown on the preliminarily oxidized Si surface. The C-V characteristics exhibit charge density peaks at a depth from 700 to 1000 nm for Si/SiO₂/Si _x Ge_{1 ? x} structures with various thicknesses of the SiO₂ layer. The results of theoretical calculations of the electron density distribution in the bulk of the silicon substrate correspond on the whole to the C-V characteristics. The state of the interfaces in the structures with different thicknesses of the oxide layer, which determines the effects of surface and interfacial recombination as well as charge carrier scattering, is studied by analyzing the kinetics of decay of a photo-emf signal and the photo-emf distribution over the surface of the structure. The results can be used in the development of various devices based on SiGe with inclusions of oxide layers.     

High-temperature ferromagnetism in Si1 ? x Mn x (x ≈ 0.5) nonstoichiometric alloys

It has been found that the Curie temperature (T _C ?? 300 K) in nonstoichiometric Si_{1 ? x} Mn _x alloys slightly enriched in Mn (x ?? 0.52?C0.55) in comparison to the stoichiometric manganese monosilicide MnSi becomes about an order of magnitude higher than that in MnSi (T _C ?? 30 K). Deviations from stoichiometry lead to a drastic decrease in the density of charge carries (holes), whereas their mobility at about 100 K becomes an order of magnitude higher than the value characteristic of MnSi. The high-temperature ferromagnetism is ascribed to the formation of defects with the localized magnetic moments and by their indirect exchange interaction mediated by the paramagnetic fluctuations of the hole spin density. The existence of defects with the localized magnetic moments in Si_{1 ? x} Mn _x alloys with x ?? 0.52?C0.55 is supported by the results of numerical calculations performed within the framework of the local-density-functional approximation. The increase in the hole mobility in the nonstoichiometric material is attributed to the decay of the Kondo (or spin-polaron) resonances presumably existing in MnSi.     

Electronic Structure of Si1-xⅣx/Si Superlattices on Si （001）

We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si1-xⅣx/Si （x = 0.125, 0.25, 0.5, Ⅳ=Ge, Sn） superlattices （SLs） grown along the [001] direction on bulk Si. The present calculations reveal that the Si0.875Ge0.125/Si, Si0.75Ge0.25/Si and Si0.875Sn0.125/Si are the F-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si1-xⅣx/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.     

Structural and magnetic study of bulk glassy Fe72 − x Co x B20Si4Nb4 alloys

The influence of the partial replacement of Fe by Co on the structural and magnetic properties of bulk-type glassy Fe_72???x Co _x B₂₀Si₄Nb₄ (x = 0, 5, 10, 15, 20, 25, 30, 35) alloys has been studied using differential scanning calorimetry (DSC), X-ray diffraction (XRD) magnetic measurements and Mössbauer spectroscopy. Results show that the successive Co addition: (1) does not affect the mass density of the studied alloys, (2) affects appreciably the super cooled region, (3) modifies the magnetic properties, exhibiting soft magnetic behavior, (4) modifies the spin texture and disorder within the studied specimens.     

Valence state and magnetic interactions in magnetically ordered Eu(Pd1−x Au x )2Si2

X-ray diffraction,¹⁵¹Eu Mössbauer effect (ME) and magnetic susceptibility measurements have been performed to investigate the valence behavior and the magnetic interactions of the Eu ions in the intermetallic series Eu(Pd_1–x Au _x )₂Si₂ (0x1) as a Forx>0.4 all experimental techniques are in agreement with each other and suggest a divalent 4f ⁷ ground state of the Eu ion. Belowx=0.4 the different methods lead to different results: while the lattice parameters and the ME isomer shift suggest an instable behavior of the valence the magnetic susceptibility proves a pure divalent 4f ⁷ ground state. These differences can be explained by assuming a partial extension of the 4f-shell radius such that the localized character of the 4f-electrons is preserved.Dedicated to B. Mühlschlegel on the occasion of his 60th birthday     

Magnetic hyperfine fields in Y2Fe17−x Si x compounds

Y₂Fe_17–x Si _x compounds withx=0, 0.5, 1.0, 1.5, 2.0, 2.5 and3.0 were investigated by magnetic measurement andNMR. It is found that with increasing Si content the Curie temperatureT _C increases while the average Fe magnetic moment _Fe decreases. NMR study indicates that Si preferentially substitute the Fe atoms at 4f sites, which is responsible for the increase ofT _C.     

Superconductivity,crystallization, and structural relaxation of the new metallic glass system La1−x Si x (0.15≤x≤0.27)

New metallic glass alloys have been prepared by melt spinning of La–Si samples in a pumped system. The superconducting transition temperature,T _c , increases linearly with the La concentration, from 3.00 K at 73 at. % La to 3.80 K at 85 at. %. Three new metastable phases: -, -, and -La₃Si, were formed by annealing and crystallizing amorphous La₃Si. Their crystal structures are orthorhombic (a=6.32 Å,b=8.06 Å,c=9.96 Å), hcp (a=10.55 Å,c=5.05 Å), and tetragonal (a=6.92 Å,c=5.05 Å) resp.T _c increased to 3.75 K, 6.00 K and 6.80 K, resp. During low temperature anneals of an amorphous La₃Si alloy,T _c changed logarithmically with time.On leave from Institute of Physics, Academica Sinica, Beijing, China     

A transmission electron microscopy study of composition in Si1− x Ge x /Si (001) quantum dots

A finite-element programme has been developed to model strain relaxation in the case of epitaxial Si_{1? x} Ge _x /Si coherent quantum dots either with or without compositional inhomogeneities. The resulting elastic displacement fields are used to calculate the intensity of dynamical plan view TEM images of such quantum dots. Various types of linear or parabolic compositional inhomogeneities are studied. TEM images of quantum dots with such inhomogeneities are calculated as well as those of quantum dots with a homogeneous composition. They are then compared with experimental images. It is shown how the analysis of the main features of these experimental images (black/white lobes and moiré-like fringes) enables us to determine the conditions in which it is possible to distinguish quantum dots with a homogeneous composition from those with compositional inhomogeneity.     

The d-resonance scattering in amorphous Fe x Pd80−x Si20 alloy

The electrical resistivity of amorphous Fe _x Pd_80–x Si₂₀ alloy has been discussed in terms of extended Ziman theory. The increase in the electrical resistivity of Fe _x Pd_80–x Si₂₀ has been predicted due to the d-resonance scattering of the conduction electrons by Fe-atoms.Dedicated to Academician Vladimír Hajko on the occasion of his 65th birthday.     

Reflection electron energy loss spectroscopy in Mn x Si1 − x composite structures

The dependences of the product of the electron inelastic mean free path λ and the differential cross section for inelastic electron scattering K on energy loss are determined from the experimental energy-loss spectra of the reflected electrons of Mn _x Si_{1 ? x} (0 ≤ x ≤ 1) composite structures. It is shown that the minimum values for the dependences of the product λK on the electron-energy loss can be used for the quantitative determination of element concentrations in this composite structure.     

GexSi1—x／Si和Ge／Si应变层超晶格

ＧｅｘＳｉ１－ｘ／Ｓｉ和Ｇｅ／Ｓｉ应变层超晶格是半导体超晶格中新发展起来的一种类型．本文简要地介绍了这类超晶格在生长和物理特性方面的一些基本问题，列举了它在器件应用方面的例子．给出了共度生长时超晶格的临界厚度值，超晶格中ＧｅｘＳｉ１－ｘ合金层能隙随成分的变化，以及界面处的能带失配值等．最后介绍了由Ｇｅ，Ｓｉ原子层有序排列而组成的新晶体．     

Facet formation in strained Si1−x Gex films

The surface morphology of epitaxial (001) Si_1−x Ge_x films, subject to biaxial strain, is studied by atomic force microscopy (AFM). Distinct facets are observed, oriented on {105}, {311}, and {518} crystal faces. The tiled arrangement of facets resembles a mosaic. We find that the growth sequence begins with the shallow {105} facets, followed by the appearance of steeper facets. After strain relaxation, the morphology coarsens and facets become less distinct. The existence of discrete facets produces a kinetic barrier to strain-induced roughening; and we show that increasing this barrier (by growing at reduced strain or reduced temperature) leads to a flatter surface morphology.     

Negatron effects in CdSe1 − x Te x and ZnS1−x Se x films

Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS_1?x Se _x films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe_{1 ? x} Te _x films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.     

Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional Si1 − x Ge x /Si structures

The dynamics of the phase transition from an electron-hole plasma to an exciton gas is studied during pulsed excitation of heterostructures with Si_{1 ? x} Ge _x /Si quantum wells. The scenario of the phase transition is shown to depend radically on the germanium content in the Si_{1 ? x} Ge _x layer. The electron-hole system decomposes into a rarefied exciton and a dense plasma phases for quantum wells with a germanium content x = 3.5% in the time range 100–500 ns after an excitation pulse. In this case, the electron-hole plasma existing in quantum wells has all signs of an electron-hole liquid. A qualitatively different picture of the phase transition is observed for quantum wells with x = 9.5%, where no separation into phases with different electronic spectra is detected. The carrier recombination in the electron-hole plasma leads a gradual weakening of screening and the appearance of exciton states. For a germanium content of 5–7%, the scenario of the phase transition is complex: 20–250 ns after an excitation pulse, the properties of the electron-hole system are described in terms of a homogeneous electron-hole plasma, whereas its separation into an electron-hole liquid and an exciton gas is detected after 350 ns. It is shown that, for the electron-hole liquid to exist in quantum wells with x = 5–7% Ge, the exciton gas should have a substantially higher density than in quantum wells with x = 3.5% Ge. This finding agrees with a decrease in the depth of the local minimum of the electron-hole plasma energy with increasing germanium concentration in the SiGe layer. An increase in the density of the exciton gas coexisting with the electron-hole liquid is shown to enhance the role of multiparticle states, which are likely to be represented by trions T ⁺ and biexcitons, in the exciton gas.