Negative Ions,Ozone, and Metastable Components in dc Oxygen Glow Discharge

In a dc glow discharge in oxygen, the concentrations of minor components of O₂(a¹Δ_g), O₂(b¹ Σ_g), O₃, O(¹D), as well as nagative ions and electrons have been measured. Balance equations have been derived which describe satisfactorily the stationary concentrations of these components as functions of gas pressure and discharge current. For the first time, the rate constants of important aeronomical reactions (a) O^? + O₂(a¹Δ_g) → O₃ + e, (b) O₂^? + O₂(a¹Δ_g) → 2O₂ + e and (c) e + O₃ → O₂^? +O have been measured as functions of gas temperature T and mean energies of ions E_i and electron E₆: K_a = (2.5 ± 0.5) · 10^?9 · (T/300)^{4 ± 0.4}· (E_i/0.04)^{?2.6 ± 0.4} cm³/s for T = 385?605 K and E_i = 0.10 ? 0.66 eV; K_b = (1.0 ± 0.3) · 10^?10 · (T/300)^{?2 ± 0.5} · (E_i/0.04)^{0.23 ± 0.05} cm³/s for T = 330?605 K and E_i = 0.09 + 1.5 eV; K_c for E_e = 0.8÷5 eV.     

Reevaluation of bandgap and free exciton binding energy of GaP

Very sensitive measurements on the spectral behaviour of the free-to-bound excitation σ_pl^°(hν) from the valence band to the deep 0 donor in GaP at low temperatures are presented. Evaluation of the threshold energy for the electronic transition, together with the known value of the 0 binding energy, provides a simple and accurate way to determine the indirect bandgap E_g of GaP. Our new value is E_g = 2.3525 ± 0.003 eV at 1.5 K, which gives an exciton binding energy E_x = 24 ± 3 meV, considerably larger than previously used values. These data also imply an upward revision of acceptor binding energies in GaP with 10 ± 2 meV.     

Spectroscopic search for the free carrier screening of the excitonic binding

A spectroscopic determination of the energy gap E_g and the exciton energy E_x in highly excited Ge at T = 5–20K is presented. Within 0.05 meV we observe no shift of E_g and E_x up to electron-hole densities of 10¹⁴?10¹⁵ cm^?3. In this range all previous theories predict a sizeable band renormalization (ΔE_g ≈?0.3 meV to ? 2 meV).     

Electroabsorption in TlInS2

Electroabsorption spectra of single crystals have been studied near the fundamental absorption edge at 77 and 300 K. At 300 K two positive peaks (2.34 and 2.42 eV) and a negative peak (2.38 eV) are observed in the electroabsorption spectrum. At liquid-nitrogen temperature a fine structure corresponding to the formation of a parabolic exciton (2.503 eV) is observed.Values of the width of the forbidden gap E_g, the n = 1 exciton positions, the exciton activation energy ΔE_b, the effective Bohr radius a_exc, the reduced effective mass of an electron-hole pair μ, and the exciton ionization field F(E_g = 2.535 eV, E_exc = 2.503 eV, E_b = 32 meV, $\text{a}{}_{\mathrm{<mtext>exc</mtext>}}\text{=}\text{28}\text{A}\text{A;}\text{;}$;, μ = 0.15 m₀, and F = 1.2 × 10⁵ V cm^-1) have been determined from the electroabsorption spectrum.     

Zeeman spectroscopy of the 4 Eu → 2 B 1g phosphorescence of copper porphin in an n-alkane single crystal

The phosphorescence spectrum of the metastable ⁴ E_u state of copper porphin in single crystals of n-octane (C₈) and n-decane (C₁₀) has been studied between 2·3 and 35 K, with and without a magnetic field B. The crystal field splitting between the orbital components observed at 35 K is δ = 30·3 ± 0·3 (C₈), 13·8 ± 0·2 cm^-1 (C₁₀). From the Zeeman shifts we derive the effective orbital angular momentum Λ′ = 0·8 ± 0·2 (C₁₀), the spin-orbit coupling parameter |Z′| = 1·5 ± 1·0 cm^-1 (C₁₀), the spin-spin dipolar interaction parameters D = -0·1 ± 0·2 cm^-1 (C₈, C₁₀) and |E| = 0·31 ± 0·03 cm^-1 (C₈, C₁₀), and the g-factors g _∥ = 2·14 ± 0·04 (C₈, C₁₀) and g _⊥ = 2·00 ± 0·03 (C₈, C₁₀).     

Hyperfine fields in erbium metal

The hyperfine Splitting of the 80.6-keVγ transition in Er¹⁶⁶ has been measured in erbium metal between 4.2 °K and 40 °K using the Mössbauer effect. There is evidence for a unique magnetic field and electric fieldgradient at all nuclei in erbium metal. The magnetic field decreases from (7.55±0.20)·10⁶ Oe at 4.2 °K to (6.10±0.40)·10⁶ Oe at 40 °K. Extrapolation to 0 °K yieldsH (0 °K)=(7.60±0.20)·10⁶ Oe. The quadrupole interaction energy for the 80.6-keV state iseQ V _Z′Z′/4=(0.95±0.20)·10^?6 eV at 4.2 °K. These results are discussed and compared with other measurements.     

Mößbauereffekt in Eisenstilben und FeCl2·H2O

Using Mößbauer effect measurements in the temperature range between 3 °K and 310 °K the magnetic fields at the nucleus in iron-stilbene, FeCl₂·H₂O and FeCl₃ are determined to beH _T=0=(250±10) kOe, (252±18) kOe and (468±10) kOe; a Néel-temperature ofT _N=(23±1) °K is measured for iron-stilbene. The electric quadrupole splittings atT=0 °K for iron-stilbene and FeCl₂ ·H ₂ O, ΔE=(+2.52±0.02) mm/sec and (+2.50±0.05) mm/sec, yield electric field gradients at the iron nucleus ofq _z=+9.7·10¹⁷ V/cm² and +9.6·10¹⁷ V/cm², whereq _z⊥H; Debyetemperatures of θ=162 °K and 188 °K are obtained. The energy of the excited 3d-electron levels in iron-stilbene is estimated to Δ₁=309 cm^?1 and Δ₂=618cm^?1 as deduced from the temperature dependence ofΔE. In contrast to the suggestion ofEuler andWillstaedt bivalence of the iron in ironstilbene is found; its composition is shown to be 4(FeCl₂ ·H ₂O)·stilbene.     

Messung der Verweilzeit von He-Atomen an Glasoberflächen

Mean sticking times of helium on a glass surface are determined at very low pressures from nonstationary molecular flow through glass capillaries. The temperature range covered is 13.8 °K to 20.4 °K. Resulting sticking times are of the order of 10^?7 to 10^?5 sec. They show a characteristic dependence on temperature and pressure. These measurements can be interpreted by means of a simple model: He-atoms mostly are bound to the surface with an adsorption energyE of 229 cal/mol?0.01 eV (±20%). However with a probability of 10^?4 the energy is 530 cal/mol?0.023 eV (±6%). In both cases sticking times τ follow the equation τ=τ₀exp(E/RT) where τ₀ is about 10^?9 to 10^?10 sec.     

Amorphous germanium III. Optical properties

The optical properties of thick sputtered films (～30μ) of amorphous Ge, grown with different substrate temperatures (0ˇ-T _sˇ-350°C), were obtained between 0·05 and 4·5 eV by a combination of reflectance, transmittance and ellipsometric measurements. The refractive index at 0·15 eV decreases monotonically with increasing T _s, or equivalently, with increasing density, and is 4·13±0·05 eV in the highest density films. The absorption edge is approximately exponential (10²?α?10⁴ cm^?1) but shifts monotonically to higher energy and increases in slope with increasing T _s. Similarly, the peak in ε₂ grows by about 10% and shifts by about 0·15 eV to higher energies, reaching a maximum of about 23 at 2·90±0·05 eV in the high density films. The peak in the transition strength ω²ε₂ occurs at 4·2±0·2 eV in all films, but increases in magnitude with increasing T _s. The sum rules for n _eff(ω) and ε_0,eff(ω) are evaluated for ▄ω?5 eV and vary monotonically with T _s. These trends are neither compatible with Galeener's void resonance theory nor with changes in the oxygen content of the films, determined by the examination of absorption peaks at 0·053 eV and 0·09 eV. An explanation, suggested here and expanded in I, is based on the observed changes in the structure of the network and voids.     

Optical band-gap of Zn3As2

Absorption measurements of single Zn₃As₂ crystals were made at temperatures 5, 80 and 300 K. Free-carrier absorption is interpreted in the simple classical model. Interband absorption shows contributions from Urbach-like excitations. The direct optical gap has been estimated as 0.99 eV at 300 K, 1.09 eV at 80 K and 1.11 eV at 5 K. The linear dependence of band-gap on temperature was found in the range 80–300 K with dE_g/dT = ? 4.55 × 10^?4eVK^?1.     

Die Temperaturabhängigkeit des Bandabstandes von Bleiselenid,gemessen an photoleitenden Schichten

The temperature dependence of spectral distribution of photoconductivity was measured on evaporated polycrystalline layers of lead-selenide in the range from 80 to 300 °K. The method ofBardeen, Blatt andHall was used, to calculate the band gap for direct and indirect transitions. A linear positive temperature coefficient was obtained for both transitions. The values areβ _dir=+(4.5±0.2) · 10^?4 eV/°K andβ _ind=+(3.0±0.2)· 10^?4eV/°K.     

Abstracts

Abstract

Isothermal annealing of amorphous Si and Ge has been performed by picosecond pulsed laser irradiation of free-standing films. It is found that the laser induced nucleation rate is about 10²¹-5.10²² cm^?3 s^?1 (Si) and 10²³-10²⁵ cm^?3 s^?1 (Ge) near the melting point. Arrhenius plots of the nucleation rate show that nucleation is thermally activated with an activation energy of about ΔE = 1.8 ± 0.1 eV (Ge) and ΔE = 2.47 ± 0.15 eV (Si).     

Estimation of the energy of the electron-photon component of cosmic rays on the basis of data for Cherenkov light from ultrahigh-energy extensive air showers

The energy fraction E _em/E ₀ dissipated to the electron-photon component of extensive air showers (EASs) for E ₀=10¹⁵?10¹⁹ eV is estimated using data on Cherenkov radiation and charged particles from the Yakutsk EAS array. The results are compared with models with different dissipations to the electron-photon component and with calculations for various primary nuclei. In the energy range 10¹⁵?10¹⁶ eV and 10¹⁸?10¹⁹ eV, the ratio E _em/E ₀ is equal to 77 ± 2 and 88 ± 2, respectively, in agreement with the mixed and proton contents of primary cosmic rays in the former and latter energy ranges, respectively.     

Optical absorption edge of GaS under hydrostatic pressure

The pressure variation of the optical edge of GaS has been measured. The direct exciton has been studied up to 6 kbar at 77 K and the indirect edge up to 40 kbar at 300 K. The exciton is shown to have a coefficient of ?2 ± 0.5 × 10^?6eV/bar and the indirect edge of ?ll ± 1.5× 10^?6eV/bar. A discussion of the values of the pressure coefficients for direct and indirect transitions in gallium chalcogenides is given.     

The excitonic absorption of CdS under pressure

Abstract

We have investigated the pressure dependence of the absorption edge of tlie E_A-E_B- and the E_C-excitons of 1pi thick CtlS(hex) crystal slabs. We obtaiurd dE_Θ/dP =dE_c/dP = 47±3 meV/GPa for T=300K and dE_A/dP= dE_B/dP = 43±3 meV/GPa for T=78K. With tliese values we were able to determine the crystal-field splitting (68f4 nieV) aid the spin-orbit splitting (26±2 meV). The resulting pressure shifts of tlie rxcitonic energies were in agreement witli a κ · p-calculation of tlie transition energies using tlie perturbation niatrix of G.E. Pikus for Δ_so ? Δ_c. The refractive Index n‖c was iiieasured for T=300K up to 2.2 GPa and described by Marples Model.     

Temperature dependance of the fundamental absorption edge in CdTe

Optical measurements made on CdTe put in light an extrinsic transition previously used to determine the interband edge of this compound. The donor level involved has a depth of 30 meV inside the bandgap at 77°K and of 60meV at 300°K. The value obtained for its temperature coefficient, suggests an association of this level with the L minimum of the conduction band.Also, determined is the true optical bandgap of CdTe between many conflicting results. One obtains: E_g = 1.529 meV with a temperature coefficient of ?3.10^?4eV/°K.     

Untersuchung der vier ersten angeregten Zustände des6Li-Kernes durch Elektronenstreuung

Inelastic electron scattering cross sections were measured for energies below 60 MeV and momentum transfersq between 0.2 and 0.6 fm^?1. Ground state radiative widths Γ _γ ⁰ and transition radiiR _tr were deduced. 2.18 MeV: Γ _γ ⁰ (E2)=(4.40±0.34) · 10^?4 eV,R _tr=(4.28±0.39)fm; 3.56MeV: Γ _γ ⁰ (M1)=(8.31±0.36)eV,R _tr=(2.90±0.10)fm; 4.27 MeV: Γ _γ ⁰ (E2)=(5.4±2.8) · 10^?3 eV,R _tr=(3.4±1.2) fm. The excitation of the 5.37 MeV level shows a transverse angular dependence.     

Temperature dependence of the energy gap of MgxZn1−xTe semiconductors alloys

Wavelength-modulation spectroscopy is used to obtain the temperature dependence of the near band gap reflectivity spectrum E_o of Mg_xZn_1?xTe ternary semiconducting alloys. Results are given in the range 80–100 K for the cubic materials: 0〈x〈0.5. The analysis of the line shapes as a function of x and T confirms the hypothesis of an exciton bound to the complex defect associated with zinc vacancy, as ZnTe. The E_o(x) curve is parabolic. The bowing parameter is C=0.45 ± 0.1 eV at 80 K, C=0.6 ± 0.1 eV at 300 K. Within experimental scattering the temperature coefficient dE₀dT is nearly constant with x:-4.5±0.3 × 10^?4eVK^?1. This data is smaller than the value calculated in the literature for ZnTe from pseudo potential method.     

SUPERCONDUCTING PROPERTIES AND STRUCTURAL PERFECTION OF EPITAXIAL YBa2Cu3O7-x THIN FILMS

The photoconductivity spectra of semimagnetic semiconductor Cd_0.7Mn_0.3Se have been measured at 50-300 K and in the wavelength range of 5500? to 8000?. It is found that the energy gap of Cd_0.7Mn_0.3Se changes with the temperature linearly, and the temperature coefficient (dE_g/dT) is about -7×10^-4 eV/K. A photoconductivity peak which is related to Mn²⁺ is also found. This peak is located around 1.85 eV, nearly unshifted with variation of the temperature. The possible transition mechanisms in Cd_1-xMn_xSe have been discussed in the light of group theory and crystal field theory, and the results are in good agreement with experiments.     

Pressure dependent optical absorption edge shift and compressibility of CdCr2Se4 single crystals

The pressure shift of the optical absorption edge (dE_g/dp = (1.1 ± 0.1) × 10^?6 eV bar^?1) and the compressibility (κ = (1.3 ± 0.) × 10^?6 bar^?1) of single crystalline CdCr₂Se₄ have been measured at ambient temperature. These data suggest an interpretation of the fundamental absorption in terms of either p → p interband or p → localized d charge transfer transitions, but exclude excitations involving s-band states.