La_(0.67)Ca_(0.33)MnO_3/Ba_(0.85)Ca_(0.15)Ti_(1-x)In_xO_3:Er/Yb磁电复合薄膜的上转换发光、电输运和磁性能研究

通过固相反应法制备了Ba_(0.835)Ca_(0.15)Ti_(1-x)In_xO_3:0.75%Er/0.75%Yb(BCTIO:Er/Yb)(0≤x≤2%)铁电陶瓷,研究了In掺杂对其铁电、介电、电输运、磁性以及上转换发光性能的影响,结果表明In掺杂对陶瓷的铁电和介电性能有所改善.在上转换发光方面,与没掺In的陶瓷相比,掺0.5%mol In的陶瓷发光性能显著提升,在550和665nm处的绿色和红色发光强度分别增强了1500%和5000%.在此基础上,我们将具有巨磁电阻效应的La_(0.67)Ca_(0.33)MnO_3(LCMO)薄膜生长在抛光后的BCTIO:Er/Yb陶瓷衬底上,构建了LCMO/BCTIO:Er/Yb磁电复合薄膜,发现该复合薄膜体系不仅具有量好的上转换发光性能,而且具有金属-绝缘体相变以及伴随着的巨磁电阻效应.磁测量表明LCMO薄膜表现出超顺磁性,这很可能是由于LCMO薄膜的晶粒尺寸很小(几十纳米)引起.这种同时具有上转换发光、铁电、压电和磁电阻效应的复合薄膜在光电子学和自旋电子学器件方面可能具有潜在的应用价值.     

金属颗粒薄膜巨磁电阻效应的影响因素

研究金属颗粒薄膜的颗粒尺寸、磁性组分等对巨磁电阻效应的影响.在自由电子模型和自旋相关散射理论的基础上，计算了金属颗粒膜体系的电子平均散射势.在计算过程中将自旋相关项与宏观量相联系，得到了巨磁电阻效应与磁性成分比例、颗粒尺寸的关系.磁电阻效应的模拟曲线表明，增加磁性成分比例和减小磁性颗粒尺寸可增强颗粒膜的巨磁电阻效应. 关键词：     

La0.8Ca0.2MnO3/SrTiO3薄膜厚度对其结构及磁学性能的影响

采用多种X射线衍射技术和磁电阻测量技术研究了不同厚度的La_0.8Ca_0.2MnO₃/SrTiO₃ (LCMO/STO)薄膜的应变状态及其对磁电阻性能的影响.结果表明，在STO(001)单晶衬底上生长的LCMO薄膜沿［00l］取向生长.LCMO薄膜具有伪立方钙钛矿结构，随着薄膜厚度的增加，面内晶格参数增加，垂直于面内的晶格参数减小,晶格参数a和b相近，略小于c.LC 关键词： X射线衍射 微结构 应变 物理性能     

二元掺杂镧锰氧化物La-Ca-Ba-Mn-O的庞磁电阻特性

用固相反应法制备了二元掺杂的镧锰氧化物La_0.67(Ca_0.6Ba_0.4)_0.33MnO_z(LCBMO)立方多晶体材料,研究了其磁特性和庞磁电阻特性,并与用类似方法制备的一元掺杂的La_0.67Ca_0.33MnO_z(LCMO)及La_0.67Ba_0.33MnO_z(LBMO)的庞磁电阻特性进行了比较.研究表明,LCBMO的居里温度T_C为312K,介于LCMO和LBMO的T_C（分别为280,362K）之间,其金属-半导体转变温度T_p和μ₀H=0.6T下的磁电阻（MR）峰值温度T_m分别为306,298K,接近于其T_C,也介于LCMO和LBMO的T_p和T_m之间.μ₀H=0.6T下,在各自的T_m处,LCMO,LCBMO和LBMO的庞磁电阻值分别达到41%,24.7%和8%,但在室温（300K）处,LCBMO的MR值仍达到20％,远大于LCMO和LBMO的值（分别为2.0％和2.4％）.研究还发现,在温度远低于T_m时,LCMO仍保持一定的磁电阻效应,而LCBMO和LBMO的磁电阻温度降低而增加,这些低温磁电阻特性与材料的结构特征（如晶界和致密度）有关. 关键词：     

高自旋极化氧化物材料的颗粒边界磁电阻效应

颗粒边界磁电阻是高自旋极化氧化物颗粒体系中由于颗粒边界的存在而导致显著的磁电阻效应。本文将这种磁电阻效应定义为颗粒边界磁电阻效应。这里所说的颗粒边界,包括各种自然和人工晶界、粉末颗粒表面、复合材料中的颗粒界面等多种情况;所涉及的材料包括高自旋极化氧化物多晶、压缩粉末和各种复合材料等。对颗粒边界磁电阻效应的研究,不仅有助于人们进一步理解高自旋极化氧化物磁输运性质的基本机制,并为寻求具有高磁电阻效应的新型自旋电子学器件提供理论基础。本文综述了高自旋极化氧化物颗粒边界磁电阻研究的主要背景和发展现状,介绍了该领域中主要的实验发现和理论模型,展望了未来的发展。     

以高温超导体为基础的颗粒复合磁电阻器件

外加磁场对超导电性有强烈抑制作用，等效于一个显的正磁电阻．将高温超导体与具有不同磁电阻特性的其它材料复合，构成纳米颗粒复合体，可改变其磁场响应，调节成分配比还可使总磁电阻在特定的温度和外磁场下改变符号，即可调谐磁电阻．根据这一原理，我们制备了以La1.85Sr0.15CuO4和YBa2Cu3O7-δ为基础的颗粒复合磁电阻器件，并在其中观测到了以可调谐磁电阻为代表的丰富的磁电现象．这些器件在磁探测、磁记录和磁场标定等方面具有重要应用价值．     

稀土锰酸盐纳米颗粒复合体系的软化学制备及磁电阻增强效应

介绍了一类增强磁电阻效应的新型稀土锰酸盐多晶颗粒复合体系及其化学制备方法,并对增强的机理进行了初步的探讨。     

高自旋极化氧化物材料的颗粒边界磁电阻效应

颗粒边界磁电阻是高自旋极化氧化物颗粒体系中由于颗粒边界的存在而导致显著的磁电阻效应。本文将这种磁电阻效应定义为颗粒边界磁电阻效应。这里所说的颗粒边界,包括各种自然和人工晶界、粉末颗粒表面、复合材料中的颗粒界面等多种情况;所涉及的材料包括高自旋极化氧化物多晶、压缩粉末和各种复合材料等。对颗粒边界磁电阻效应的研究,不仅有助于人们进一步理解高自旋极化氧化物磁输运性质的基本机制,并为寻求具有高磁电阻效应的新型自旋电子学器件提供理论基础。本文综述了高自旋极化氧化物颗粒边界磁电阻研究的主要背景和发展现状,介绍了该领域中主要的实验发现和理论模型,展望了未来的发展。     

用脉冲激光方法在Si(100)上沉积的Cox-C1-x颗粒膜及其磁电阻效应

利用脉冲激光沉积方法在Si(100)上制备了Cox-C1-x颗粒膜,并研究了其正磁电阻效应.实验结果表明,样品在室温下的正磁电阻效应要远远高于低温下的正磁电阻效应;Co0.02-C0.98样品具有最大的室温正磁电阻效应,在外加磁场B=1T时,其磁电阻率MR=22%;随着Co含量的增加,Cox-C1-x颗粒膜的正磁电阻效应呈减小趋势.样品的MR-B的曲线与传统的多层膜及颗粒膜结构有很大的不同,这一现象表明在实验样品中可能存在着一种新的输运机制.     

新型的氧化物磁制冷工质与隧道磁电阻材料--2004年度国家自然科学二等奖获奖项目介绍

文章介绍了2004年度国家自然科学二等奖获奖成果[21].类钙钛矿型材料是一类物理内涵极其丰富的化合物,它是著名的高温超导材料、铁电材料、压电材料,又是庞磁电阻效应材料,目前又显示出具有大磁熵变效应与隧道磁电阻效应.文章作者系统地研究了锰钙钛矿磁性化合物的磁熵变与组成、微结构以及颗粒尺寸的关系,研究结果表明,磁性钙钛矿化合物具有显著的磁熵变,居里温度易调,并且化学稳定性佳,从而成为一类新型的磁制冷工质候选材料.此外,文章作者还研究了钙钛矿化合物纳米颗粒体系的磁电阻效应,发现除人们发现的居里温度附近的本征的庞磁电阻效应外,在很宽的低温区,存在与温度不甚敏感的隧道磁电阻效应.     

Fe3O4 Segregation and Transport Properties of La0.67Ca0.33MnO3

Effect of Fe3O4 segregation at grain boundaries on the electrical transport and magnetic properties of La0.67Ca0.33MnO3 is investigated. The experimental results show that the Fe3O4 segregation not only shifts the paramagnetic-ferromagnetic transition temperature of La0.6TCa0.33MnO3 to a lower temperature region but also induces a new transition in a lower temperature region. Meanwhile, the transition processes observed in both the resistivity and magnetization curves are obviously widened. Compared to pure La0.67Ca0.33MnO3, we assume that the Fe3O4 segregation level at the grain boundaries can modify the electrical transport and magnetic properties of La0.67Ca0.33MnO3.     

La0.67Ca0.33MnO3薄膜中的各向异性应变与电荷有序

本文采用脉冲激光沉积法在NdGaO3(001)单晶衬底上制备了一系列的La0.67Ca0.33MnO3薄膜,实验主要研究了薄膜的输运性质.La0.67Ca0.33sMnO3块材是铁磁金属基态,而La0.67Ca0.33MnO3/NdGaO3(001)薄膜由于各向异性应变的存在,可以观测到电荷有序绝缘相的出现.薄膜样品表...     

A change from second- to first-order transition in (La(1-x)Eu(x))0.67Ca0.33MnO3 (0 ≤ x ≤ 0.2)

A detailed investigation of the paramagnetic to ferromagnetic transition in (La(1-x)Eu(x))(0.67)Ca(0.33)MnO(3) having small Eu(3+)-content (0 ≤ x ≤ 0.2) has been carried out through resistivity and magnetization measurements. X-ray diffraction patterns of the compounds reveal a single phase (La(1-x)Eu(x))(0.67)Ca(0.33)MnO(3) (0 ≤ x ≤ 0.2) of an orthorhombic crystal structure after annealing the precursor at 800 °C for 2 h in air. With increasing Eu(3+)-content, the second-order transition (at x = 0 and 0.1) changes to first-order at x = 0.2. The experimental results demonstrate thermomagnetic irreversibility of the transition for x = 0.2 composition. This arises between the supercooling and superheating regimes where both the ferromagnetic and paramagnetic phases coexist.     

Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

La0.67Sr0.33MnO3薄膜光响应特性研究

实验测量了在不同温度和电场下,超巨磁电阻CMR(colossal magnetoresistance)薄膜材料La_0.67Sr_0.33MnO₃(LSMO)的光响应特性.发现样品被激光照射后,具有光诱导电阻变化的特性.在温度小于居里点Tc时,电阻随温度升高而增大,在Tc以上时,电阻则随温度升高而减小.通过对样品的光脉冲响应和偏置电场的关系分析,可认为其光响应特性的机理与激光激励下引起的自旋系统变化有关.     

掺杂锰基氧化物中的相分离和渗流效应

目前，相分离仍是锰基氧化物超大磁电阻材料研究的热点，渗流效应假设已广泛用于解释其电输运特性．作者用变温磁力显微镜首次在La0.33Pr0.34Ca0.33MnO3薄膜中直接观察到了渗流过程，微观上证明了渗流效应假设的正确性．实验发现，降温过程中电阻率的陡降是铁磁金属相的渗流效应引起的，升温过程中电阻率的上升，则是由导电路径上磁畴的磁化强度随温度的升高而降低引起的，而导电路径一直存在．微观的磁回滞和宏观的电阻回滞相吻合．当然要定量解释锰氧化物中的超大磁电阻效应还需要做大量的理论和实验工作．     

Homogeneous interface-type resistance switching in Au/La_0.67Ca_0.33MnO₃/SrTiO₃/F:SnO₂ heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 10 4 % by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

La0.67Ca0.33MnO3/NdGaO3(001)薄膜中外延应变诱导的各向异性磁阻效应

本文使用脉冲激光沉积方法在正交的NdGaO3(001)衬底上外延生长了La0.67Cao.33MnO3薄膜.退火后,由于外延应变引起薄膜正交畸变增强,薄膜在低于250K的整个温度区间都出现了铁磁金属态和反铁磁绝缘态的相分离和相竞争.这两相的竞争强烈依赖于磁场相对晶轴的方向,由此导致存在于很宽温度范围内的低场各向异性磁阻...     

Elastically strained and relaxed La0.67Ca0.33MnO3 films grown on lanthanum aluminate substrates with different orientations

Physics of the Solid State - Structure of 40-nm thick La0.67Ca0.33MnO3 (LCMO) films grown by laser evaporation on (001) and (110) LaAlO3 (LAO) substrates has been investigated using the methods of...     

Thermal Hysteresis in La2/3 Ca1/3 MnO3 Films Grown on Tilted SrTiO3 Substrates and Influence of External Magnetic Field

Thermal hysteresis in the resistivity of La2/3 Cu1/3MnO3 thin films grown on tilted SrTiO3 substrates is simulated by using the random network model on the basis of mixed-phase percolation between metallic and insulating domains, The metallic-insulating transition temperatures during the warming process are lower than those during the cooling process due to the difference in fraction of metallic domains between warming and cooling process. With an external magnetic field, the metallic-insulating transition temperatures shift to a higher value and the resistivities are reduced. The excellent agreement between the simulation and the experimental data further verifies that phase separation plays a crucial role in the transport process of La2/3Ca1/3MnO3 thin films.