绿光抽运准周期光学超晶格产生红光与蓝光的研究

使用一块准周期LiTaO3光学超晶格晶体,利用准相位匹配技术,通过光参变产生与和频两个非线性过程,将一束532nm绿色抽运光转变成666nm红光与443nm蓝光。具体过程为,通过参变过程获得红色信号光和红外闲频光,再通过绿色抽运光与红外闲置光和频获得蓝光,两个过程在同一块准周期光学超晶格中实现,准周期超晶格的两个倒易矢量分别补偿这两个过程中的相位失配。抽运光的脉宽为40ps,重复频率为10Hz,在平均功率为0．5mW时,测得红光和蓝光功率分别0．15mW和16．6μW,转换效率达到34％和3％。这一方法,提供了一种用一块超晶格晶体同时获得三原色输出的有效途径。     

准周期LiTaO3光学超晶格及其三倍频效应

在ＬｉＴａＯ３单晶中引入Ｆｉｂｏｎａｃｃｉ序列铁电畴结构，首次研制成具有直接三倍频功能的准周期光学超晶格．实验证实了光的高次谐波可以通过若干个准位相匹配的二级非线性过程的耦合有效地产生，展示了准周期光学超晶格在非线性光学和光电子技术领域的应用前景     

基于准周期光学超晶格的高效电光调制差频转换

为获得尽可能大的差频转换效率,基于准周期极化铌酸锂(QPPLN)光学超晶格,提出了级联电光和差频理论,用于高效的差频转换。其方法是沿QPPLN光学超晶格的y方向施加一个外加电场,用来控制能量在抽运光、信号光、o偏振的差频光和e偏振的差频光四个光波之间的转移。计算结果表明,在一个100℃,40mm长的QPPLN光学超晶格中,当1550nm信号光与1064nm抽运光光强比值r<0.324时,对光强超过特定值的任意抽运光都可以通过施加一个适当的外加电场将抽运光完全转化为1550nm信号光和3393.4nm差频光;当r≥0.324,只当抽运光光强落在一定范围内时,才可以通过施加外加电场使抽运光完全转化为信号光和差频光;超过该范围,外加电场不能增加差频光转换效率。计算结果还表明,电光调制差频转换效率对温度和畴构造误差都不敏感。     

准周期铁电光学超晶格多波长二次谐波的产生

准周期材料的研究是凝聚态物理学的热门课题之一。我们利用外电场室温极化技术，成功地制备了准周期ＬｉＴａＯ３超晶格，首次获得了高效，多波长的二次谐波输出。对应的基波波长分别为０．９７６２，１．０８４６，１．８３４，１．３６５０和１．５６９９μｍ。     

光强对短脉冲在准周期光学超晶格中传输的影响

在考虑自相位调制和高阶群速色散的情况下,分析了超短脉冲在准周期Fibonacci超晶格中传输时,入射光强对脉冲传输特性的影响。结果表明：入射光强度对脉冲传输特性影响很大,不但使频谱展宽,而且限制超晶格的有效长度,是超短脉冲进行频率转换的主要考虑因素之一。     

光强对短脉冲在准周期光学超晶格中传输的影响

 在考虑自相位调制和高阶群速色散的情况下，分析了超短脉冲在准周期Fibonacci超晶格中传输时，入射光强对脉冲传输特性的影响。结果表明：入射光强度对脉冲传输特性影响很大，不但使频谱展宽，而且限制超晶格的有效长度，是超短脉冲进行频率转换的主要考虑因素之一。     

应变超晶格系统的共振行为及其动力学稳定性

在经典力学框架内和Seeger方程基础上,讨论了应变超晶格界面附近的位错动力学行为,指出了系统的非线性共振将导致位错的运动与堆积,并可能造成超晶格的分层或断裂.首先,引入阻尼项,在小振幅近似下,把描述一般位错运动的Seeger方程化为了超晶格系统的广义Duffing方程.利用多尺度法分析了系统的主共振、超共振和子共振,并找到了系统出现这三类共振的临界条件.结果表明,系统的临界条件与它的物理参数有关,只需适当调节这些参数就可以原则上避免共振的出现,保证了超晶格材料的完整性和性能的稳定性. 关键词： 位错动力学 应变超晶格 共振 分岔     

双频激励下超晶格系统的混沌行为

假设超晶格“折沟道”对粒子的作用等效为形状相似的周期调制; 引入正弦平方势, 在小振幅近似下, 把粒子运动方程化为具有双频激励的Duffing方程。 用Melnikov方法分析了系统的混沌行为。 结果表明, 当外场为双频激励时, 系统将存在不同的次谐和超次谐分叉序列。 由于系统的混沌行为与系统参数有关, 于是, 只需控制材料组分、 或掺杂浓度, 就可望达到避免或控制混沌的目的, 为半导体超晶格的制备及其光磁电效应提供了理论分析。     

自相位调制及群速色散对超短脉冲在准周期LiNbO3 Fibonacci超晶格中传输的影响

从LiNbO₃ Fibonacci超晶格的结构特点出发,数值模拟了超短脉冲在LiNbO₃ Fibonacci超晶格内传输过程中,自相位调制及高阶群速色散效应对脉冲形状和频谱的影响．结果表明,超短脉冲在Fibonacci超晶格中传输时,由于自相位调制(SPM)与群速色散(GVD)耦合效应的影响,脉冲形状畸变和频谱展宽均是不对称的,随着晶格长度的增加,脉冲将会发生分裂,以至成为两个独立的子脉冲,同时也会出现脉冲频谱上的分裂. 关键词：     

带电粒子同超晶格的相互作用与系统的混沌行为

把超晶格“折沟道”对粒子的作用等效为形状相似的弱周期调制. 利用正弦平方势把粒子运动方程化为具有外周期弱调制的非线性微分方程，并利用Melnikov 方法分析了系统出现Smale 马蹄的临界条件. 预言了带电粒子同超晶格相互作用过程中, 系统可能出现的混沌行为, 为半导体超晶格材料的制备和半导体超晶格光磁电效应的研究提供了基本的理论分析. 关键词： 超晶格 非线性 微分方程 混沌     

Passivation techniques for InAs/GaSb strained layer superlattice detectors

InAs/(In,Ga)Sb Strained Layer Superlattices (SLSs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. The basic material properties of SLS provide a prospective benefit in the realization of IR imagers with suppressed interband tunneling and Auger recombination processes, as well as high quantum efficiency and responsivity. With scaling of single pixel dimensions, the performance of focal plane arrays is strongly dependent on surface effects due to the large pixels’ surface/volume ratio. This article discusses the cause of surface leakage currents and various approaches of their reduction including dielectric passivation, passivation with organic materials (polyimide or various photoresists), passivation by overgrowth of wider bandgap material, and chalcogenide passivation. Performance of SLS detectors passivated by different techniques and operating in various regions of infrared spectrum has been compared.     

太赫兹场和倾斜磁场对超晶格电子动力学特性调控规律研究

微带超晶格在磁场和太赫兹场调控下表现出丰富而复杂的动力学行为, 研究微带电子在外场作用下的输运性质对于太赫兹器件设计与研制具有重要意义. 本文采用准经典的运动方程描述了超晶格微带电子在沿超晶格生长方向(z方向)的THz场和相对于z轴倾斜的磁场共同作用下的非线性动力学特性. 研究表明, 在太赫兹场和倾斜磁场共同作用下, 超晶格微带电子随时间的演化表现出周期和混沌等新奇的运动状态. 采用庞加莱分支图详细研究了微带电子在磁场和太赫兹场调控下的运动规律, 给出了电子运行于周期和混沌运动状态的参数区间. 在电场和磁场作用下, 微带电子将产生布洛赫振荡和回旋振荡, 形成复杂的协同耦合振荡. 太赫兹场与这些协同振荡模式之间的相互作用是导致电子表现出周期态、混沌态以及倍周期分叉等现象的主要原因.     

Parameter analysis of chaotic superlattice true random number source

Superlattices in chaotic state can be used as a key part of a true random number generator. The chaotic characteristics of the signal generated in the superlattice are mostly affected by the parameters of the superlattice and the applied voltage,while the latter is easier to adjust. In this paper, the model of the superlattice is first established. Then, based on this model,the chaotic characteristics of the generated signal are studied under different voltages. The results demonstrate that the onset of chaos in the superlattice is typically accompanied by the mergence of multistability, and there are voltage intervals in each of which the generated signal is chaotic.     

Modeling and simulation of long-wave infrared InAs/GaSb strained layer superlattice photodiodes with different passivants

Current–voltage characteristics of long-wave infrared (LWIR) InAs/GaSb strained layer superlattice photodiodes (cut-off wavelength ∼10 μm), passivated with different surface passivants, have been modeled and simulated using ATLAS software from SILVACO. The simulated results are fitted to previous experimental results obtained on unpassivated devices and those passivated by silicon-dioxide (SiO₂), silicon nitride (Si_xN_y) and zinc sulfide (ZnS). Surface parameters in terms of surface recombination velocity, shunt resistance and interface trap density are extracted for different passivants. The performance of silicon-dioxide passivated diode is solely dominated by a shunt leakage path with a shunt resistance value of 0.56 Ω-cm². Extracted electron and hole surface recombination velocities have values of 10⁵ cm/s and 10⁷ cm/s for unpassivated, 10³ cm/s and 10⁵ cm/s for Si_xN_y passivated and 10² cm/s and 10³ cm/s for ZnS passivated devices. Interface trap density follows a similar trend with values of 10¹⁵ cm⁻², 8.5 × 10¹⁴ cm⁻² and 10¹⁰ cm⁻² for unpassivated, Si_xN_y passivated and ZnS passivated devices respectively. The suitability and limitations of the simulation tool are discussed.     

Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates

Various temperature measurements of cyclotron resonance (CR) under pulsed ultra-high magnetic field up to 160 T were carried out in InGaAs/GaAs superlattice (SL) and InGaAs/AlAs SL samples grown by molecular beam epitaxy on GaAs substrates. Clear free-electron CR and impurity CR signals were observed in transmission of CO₂ laser with wavelength of 10.6 μm. A binding energy of impurities in these SLs was roughly estimated based on the experiment as result, and we found it was smaller than the previous experimental result of GaAs/AlAs SLs and theoretical calculation with a simple model.     

Extending the excitation sculpting concept for selective excitation

Nowadays, excitation sculpting is probably the most efficient way to achieve selectivity in an NMR experiment, since it associates very clean frequency selection with "user-friendliness." In the present report, it is shown that the excitation sculpting concept, originally based on a double pulse field gradient echo acting on a selected transverse magnetization, can be extended through new experiments designed to act on longitudinal magnetization. This leads to outstanding performances, especially when the transverse relaxation rate is a limiting factor as, for example, in the case of biological macromolecules. Several new sequences are proposed, aiming at the selection of magnetization aligned either/both on a transverse axis or/and on the z-axis. Their potentialities are illustrated in light of different applications including multiplet-selective excitation, band-selective excitation, and water suppression.     

参数激励与晶体摆动场辐射的稳定性

寻找新光源, 特别是短波长相干光源备受关注. 本文讨论了晶体摆动场辐射作为短波长激光的可能性和必须满足的基本条件; 指出了至今尚未获得可利用的短波长激光可能不只是技术原因, 而且还有物理原因. 利用参数激励方法对这个问题进行了分析. 在经典力学框架内和偶极近似下, 引入正弦平方势, 把粒子运动方程化为具有阻尼项和参数激励项的摆方程. 利用Melnikov方法讨论了系统的稳定性, 并对系统的临界条件进行了分析. 结果表明: 系统的稳定性与其参数有关, 只需适当调节这些参数, 系统的稳定性就可以原则上得到保证. 关键词： 晶体摆动场辐射 沟道辐射 参数激励 稳定性     

Optical property and collective excitation of plasmon in a multiple-quantum-well superlattice in electric field

A finite type-I superlattice with different dielectric media on either side of the surfaces is considered under a perturbing electric fields parallel to the superlattice axis on the basis of an infinite square potential well. Using the random-phase approximation, the density–density correlation function including intra- and inter-level transitions in a multiple-quantum-well (MQW) is calculated. The dispersion relations for the surface and the bulk states are obtained as functions of the momentum wave vector and the averaged electric field strength over the quantum well. The Raman intensities due to the bulk and the surface plasmons for the intra- and the inter-level transitions are also obtained for incoming light energy.