Quantum dot with N interacting electrons confined in a power-law external potential

The ground-state physical properties, such as electron density, chemical potential, and total energy, of a two-dimensional quantum dot with N interacting electrons confined in a power-law external potential are numerically determined by the Thomas-Fermi approximation. The effect of the confining potential on properties such as electron density and chemical potential is examined for both interacting and non-interacting systems. It is shown that the results of the calculations are in excellent agreement with those given in the literature. The results indicate that interactions and the shape of the confinement affect the density and thus the ground-state properties of the electrons significantly.     

ZnO纳米粒子结构对光电量子限域特性的影响

Zn O作为一种宽禁带 (3 .3 6e V)高激子结合能 (60 me V)的半导体材料已引起人们的关注 .Zn O纳米粒子的比表面积较大 ,表面活性较高 ,对周围环境敏感 ,使其成为传感器制作中最有前途的材料[1] ,还在太阳能转换[2 ] 、发光材料[3] 、半导体表面修饰与敏化[4 ] 、纳米电子学以及分子电子学器件[5] 等领域显示出广阔的应用前景 .制约这些应用的关键是 Zn O纳米粒子表面和界面的电子结构和电荷转移行为 ,但有关此方面的报道较少 .本文用溶胶 -凝胶法制备了不同粒径的 Zn O纳米粒子 ,应用表面光电压谱 (SPS)和场诱导表面光电压谱 (FISPS…     

Repulsive impurity doped quantum dot subjected to oscillatory confinement potential: Role of dopant strength and dopant location on time-evolution

We explore the pattern of time evolution of eigenstates of a repulsive impurity doped quantum dot. The quantum dot is 2-dimensional and contains one electron which is harmonically confined. We have considered Gaussian impurity centers. A static transverse magnetic field is also present. Under a periodically fluctuating confinement potential, the system reveals a long time dynamics. The investigation points to a typical value of impurity potential strength at which the excitation is maximum. This typical value has also been found to be strongly dependent on dopant location. The rate of transition between the eigenstates depends delicately on several impurity dependent factors modulated by the oscillating confinement potential and explains the excitation maximization quite elegantly.     

Real space Hartree-Fock configuration interaction method for complex lateral quantum dot molecules

We present unrestricted Hartree-Fock method coupled with configuration interaction (CI) method (URHF-CI) suitable for the calculation of ground and excited states of large number of electrons localized by complex gate potentials in quasi-two-dimensional quantum dot molecules. The method employs real space finite difference method, incorporating strong magnetic field, for calculating single particle states. The Hartree-Fock method is employed for the calculation of direct and exchange interaction contributions to the ground state energy. The effects of correlations are included in energies and directly in the many-particle wave functions via CI method using a limited set of excitations above the Fermi level. The URHF-CI method and its performance are illustrated on the example of ten electrons confined in a two-dimensional quantum dot molecule.     

Long-Range Transport in an Assembly of ZnO Quantum Dots: The Effects of Quantum Confinement,Coulomb Repulsion and Structural Disorder

We have studied the storage and long-range transport of electrons in a porous assembly of weakly coupled ZnO quantum dots permeated with an aqueous and a propylene carbonate electrolyte solution. The number of electrons per ZnO quantum dot is controlled by the electrochemical potential of the assembly; the charge of the electrons is compensated by ions present in the pores. We show with optical and electrical measurements that the injected electrons occupy the S, P, and D type conduction electron levels of the quantum dots; electron storage in surface states is not important. With this method of three-dimensional charge compensation, up to ten electrons per quantum-dot can be stored if the assembly is permeated with an aqueous electrolyte. The screening of the electron charge is less effective in the case of an assembly permeated with a propylene carbonate electrolyte solution. Long-range electron transport is studied with a transistor set-up. In the case of ZnO assemblies permeated with an aqueous electrolyte, two quantum regimes are observed corresponding to multiple tunnelling between the S orbitals (at a low occupation) and P orbitals (at a higher occupation). In a ZnO quantum-dot assembly permeated with a propylene carbonate electrolyte solution, there is a strong overlap between these two regimes.     

Quantum Dot Based on Z-shaped Graphene Nanoribbon: A First-principles Study

The electronic and transport properties of the Z-shaped graphene nanoribbons heterojunction are investigated by a fully self-consistent nonequilibrium Green's function method combined with density functional theory. The first-principles calculations show that the robust quantum confinement effect in the junction can be used to design the quantum dot. The electronic states are confined by the topological structure of the junction. This kind of Z-shapedquantum dot can be realized regardless of doping impurity, edge chemical modification, and the length of junction. Moreover, the spatial distribution and the number of confined states are tunable.     

Determination of the rod-wire transition length in colloidal indium phosphide quantum rods

Colloidal InP quantum rods (QRs) having controlled diameters and lengths are grown by the solution-liquid-solid method, from Bi nanoparticles in the presence of hexadecylamine and other conventional quantum dot surfactants. These quantum rods show band-edge photoluminescence after HF photochemical etching. Photoluminescence efficiency is further enhanced after the Bi tips are selectively removed from the QRs by oleic acid etching. The QRs are anisotropically 3D confined, the nature of which is compared to the corresponding isotropic 3D confinement in quantum dots and 2D confinement in quantum wires. The 3D-2D rod-wire transition length is experimentally determined to be 25 nm, which is about 2 times the bulk InP exciton Bohr radius (of approximately 11 nm).     

硅烯量子点二聚物的等离激元激发

基于含时密度泛函理论,研究了随着间距改变时硅烯量子点二聚物的等离激元激发特性。沿垂直于硅烯所在平面方向激发时,在一定间距范围内,硅烯量子点二聚物中形成了长程电荷转移激发模式。参与长程电荷转移激发的π电子主要在两个量子点之间运动。该等离激元模式随着间隙的减小发生蓝移。此外,在不同间距时,体系中还有两个等离激元共振带,分别位于7和15 eV附近。沿平行于硅烯所在平面方向激发时,由于两个量子点之间的耦合,在低能     

Polymer/carbon-based quantum dot nanocomposite: forthcoming materials for technical application

This endeavor presents state-of-the-art overview on polymer/carbon-based quantum dot nanocomposite. Carbon-based quantum dot (graphene quantum dot, carbon nanodot, and polymer dot) are ～10nm. Carbon-based quantum dot own exciting features such as tunable optoelectronic and photoluminescence properties, high stability, chemical inertness, low cytotoxicity, and biocompatibility owing to quantum confinement and edge effects. Main emphasis of article was to see the combined effect of polymer and carbon-based quantum dot in nanocomposite. Five major categories have been reviewed in this article including conjugated polymer/carbon-based quantum dot nanocomposite, epoxy/carbon-based quantum dot nanocomposite, polystyrene/carbon-based quantum dot nanocomposite, poly(dimethyl siloxane)/carbon-based quantum dot nanocomposite, and block copolymer/carbon-based quantum dot nanocomposite. The review also refers to cutting edge application areas of polymer/carbon-based quantum dot nanocomposite. Conducting polymer/carbon quantum dot nanocomposite has been integrated in energy storage devices, detectors, and electronic devices. These materials are also promising candidates for bulk heterojunction solar cells and light-emitting diodes. Another important use is the identification and removal of toxic metals. Functional materials have also been used for fluorescence imaging of live cells. Modification of carbon-based quantum dot and incorporation in appropriate polymer matrices can be adopted as powerful future tool enabling desired tailored applicability of nanocomposite in advance high performance technical applications.     

Charging effects in a CdSe nanotetrapod

The charging effects in a CdSe nanotetrapod have been theoretically investigated by using an atomistic pseudopotential method. We showed that the simple quasiparticle equation based on classical electrostatic consideration can be derived from the many-body GW equation under proper approximations. We found that the surface polarization potential can significantly change the electron wave functions, and there is an incomplete cancellation for this potential between the single particle energies and the electron-hole Coulomb interaction. Thus, it is necessary to include this potential in the calculation for complex unconvex systems. We also calculated the electron addition energies for a tetrapod. Unlike a simple spherical quantum dot, in which the addition energies are almost a constant, there is a large variation in the calculated addition energies for different numbers of electrons in a tetrapod.     

The influence of electron confinement,quantum size effects,and film morphology on the dispersion and the damping of plasmonic modes in Ag and Au thin films

Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs) are waves that propagate along the surface of a conductor. SPs find applications in magneto-optic data storage, optics, microscopy, and catalysis.The investigation of SPs in silver and gold is relevant as these materials are extensively used in plasmonics. The theoretical approach for calculating plasmon modes in noble metals is complicated by the existence of localized d electrons near the Fermi level. Nevertheless, recent calculations based on linear response theory and time-dependent local density approximation adequately describe the dispersion and damping of SPs in noble metals.Furthermore, in thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications. The presence of quantum well states in the Ag and Au overlayer affects both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP) in Ag thin films exhibiting quantum well states. The slope of the dispersion of ASP decreases with film thickness.High-resolution electron energy loss spectroscopy (HREELS) is the main experimental technique for investigating collective electronic excitations, with adequate resolution in both the energy and momentum domains to investigate surface modes.Herein we review on recent progress of research on collective electronic excitations in Ag and Au films deposited on single-crystal substrates.     

Dark channels in resonant tunneling transport through artificial atoms

We investigate sequential tunneling through a multilevel quantum dot confining multiple electrons in the regime where several channels are available for transport within the bias window. By analyzing solutions to the master equations of the reduced density matrix, we give general conditions on when the presence of a second transport channel in the bias window quenches transport through the quantum dot. These conditions are in terms of distinct tunneling anisotropies which may aid in explaining the occurrence of negative differential conductance in quantum dots in the nonlinear regime.     

Realization of vibronic entanglement in terms of tunneling current in an artificial molecule

Based on the concept of molecular nonadiabatic processes, namely, curve crossing and electronic interstate coupling, here we have introduced a model of an artificial molecule composed of three coupled quantum dots in terms of displaced harmonic oscillators of the confinement potential. We have shown that the static and dynamic features of vibronic entanglement can be realized in terms of the tunneling current in our model. An entanglement sudden-death can be shown to be equivalent to the suppression of tunneling current at the appropriate parameters of the magnetic field. We have also provided the nonclassicality of the vibration of the dot confinement potential which maximizes at the anticrossing zone.     

Electronic quantum trajectories in a quantum dot

This article gives a quantum‐trajectory demonstration of the observed electric, magnetic, and thermal effects on a quantum dot with circular or elliptic shape. By applying quantum trajectory method to a quantum dot, we reveal the quantum‐mechanical meanings of the classical concepts of backscattering and commensurability, which were used in the literature to explain the peak locations of the magnetoresistance curve. Under the quantum commensurability condition, electronic quantum trajectories in a circular quantum dot are shown to be stationary like a standing wave, whose presence increases the electrical resistance. A hidden quantum effect called magnetic stagnation is discovered and shown to be the main cause of the observed jumps of the magnetoresistance curve. Quantum trajectories in an elliptic quantum dot are found to be chaotic and an index of chaos called Lyapunov exponent is proposed to measure the irregularity of the various quantum trajectories. It is shown that the response of the Lyapunov exponent to the applied magnetic field captures the main features of the experimental magnetoresistance curve. © 2014 Wiley Periodicals, Inc.     

Restricted and unrestricted Hartree–Fock approaches applied to spherical quantum dots in a magnetic field

The Roothaan and Pople–Nesbet approaches for real atoms are adapted to quantum dots in the presence of a magnetic field. Single‐particle Gaussian basis sets are constructed, for each dot radius, under the condition of maximum overlap with the exact functions. The chemical potential, charging energy, and total spin expected values are calculated, and we have verified the validity of the quantum dot energy shell structure as well as Hund's rule for electronic occupation at zero magnetic field. At finite field, we have observed the violation of Hund's rule and studied the influence of magnetic field on the closed and open energy shell configurations. We have also compared the present results with those obtained within the LS‐coupling scheme for low electronic occupation numbers. We focus only on ground‐state properties and consider quantum dots populated up to 40 electrons, constructed by GaAs or InSb nanocrystals. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2006     

纳米粒子的电容

纳米粒子的电容对由纳米点陈列所形成的单电子器件是一个十分重要的参数。基于少体理论,提出了计算纳米粒子量子点充电电容的理论模型,由此可以预测出室温下出现库仑台阶等单电子现象的最大纳米粒子粒径。采用简谐势模型计算模拟了CdS、PbS半导体纳米粒子的充电电容,发现CdS、PbS纳米粒子的尺寸上限为11与5 nm。理论计算结果与实验相吻合。     

Trapping photon-dressed Dirac electrons in a quantum dot studied by coherent two dimensional photon echo spectroscopy

We study the localization of dressed Dirac electrons in a cylindrical quantum dot (QD) formed on monolayer and bilayer graphene by spatially different potential profiles. Short lived excitonic states which are too broad to be resolved in linear spectroscopy are revealed by cross peaks in the photon-echo nonlinear technique. Signatures of the dynamic gap in the two-dimensional spectra are discussed. The effect of the Coulomb induced exciton-exciton scattering and the formation of biexciton molecules are demonstrated.     

Magneto-optical specifications of Rosen-Morse quantum dot with screw dislocation

This is the first study to consider a quantum dot with screw dislocation that has Rosen-Morse (RM) confinement potential, generated by a GaAs/GaAlAs heterostructure. An external magnetic field and Aharonov-Bohm (AB) flux field were also applied on RM quantum dot (RMQD) in order to stave the effects of a screw dislocation defect. The combined effect of the screw dislocation defect, the external magnetic field, and AB flux field on the total refractive index changes (TRICs) and the total absorption coefficients (TACs) of RMQD are thus investigated. Cylindrical coordinates are used due to the direction of application of the torsion and the external fields, as well as due to the structure's symmetry. The effective mass approximation and tridiagonal matrix methods are used in order to obtain the subband energy spectra and electronic wave functions of RMQD. The nonlinear optical specifications of RMQD are checked using compact-density-matrix formalism within the framework of the iterative method. Reviews without screw dislocation are also carried out in order to be able to clarify the effects of a screw dislocation defect on the optical properties, and then, both cases are deliberated. This study is the first attempt to analyze the AB flux field for RMQD without screw dislocation. In the present study, the influences of a screw dislocation defect on RMQD's TRICs and TACs are probed by considering different values of the external magnetic field and AB flux field, and the ranges of corresponding parameters on the optimum of the structure are specified. Moreover, the study also elucidates how to rule out the effects of screw dislocation on optical specifications by means of the external fields. Despite a certain screw dislocation, the frequency range is determined where the structure behaves as if it is perfect (namely, without screw dislocation) for its optimum, which in turn is crucial for experimental applications.     

Surfaces and interfaces in short-period GaAs/AlAs superlattices

Photoelectron spectroscopy, in particular the angular resolved photoemission excited by ultraviolet radiation (ARUPS), provides the most direct experimental information about the electron structure of crystals, both of the bulk and of the low-index surfaces. The sensitivity of the method, as well as its difficulties, when applied to GaAs/AlAs superlattices are described. The new periodicity of these man-made crystals in the direction of their growth (e.g., in the layer-by-layer growth in molecular beam epitaxy), is responsible for opening of the new energy gaps (so-called minigaps) in the electron energy bands of crystals forming the superlattice. In addition to the well-known confinement of electrons at the valence and conduction band edges in long-period superlattices, the electron confinement to the interfaces has also been found in the vicinity of minigaps in short-period superlattices. The role of this confinement in the intensities of electrons photoemitted from superlattice surfaces is discussed. Superlattices with different thicknesses in the topmost layers represent systems with a simple change of the surface atomic structure. The predictions of one-dimensional models about a change of the surface-state energy within the band gap with a change of crystal potential termination are tested for the ideally terminated (1 0 0) surface of a very thin superlattice (GaAs)₂(AlAs)₂. The results of the energy distributions of photoemitted electrons, calculated in the one-step model of photoemission, show that the ARUPS experimental observation of surface-state shifts should be possible, at least in larger minigaps. The results indicate the possibility of a straightforward tuning of the electronic structure of the superlattice surface by geometrical means.