基于MoO3/Ag/MoO3透明阳极的顶发射OLED的模拟计算与制备

运用传输矩阵法和正交分析法模拟计算出MoO₃/Ag/MoO₃透明电极的最佳厚度,采用镀膜实验验证模拟计算的准确性,制备了一系列不同MoO₃膜厚度和Ag膜厚度的透明电极。然后,制备了一系列顶发射有机电致发光器件:铝/氟化锂(LiF)/三(8-羟基喹啉)铝(Alq₃)/N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺/三氧化钼(MoO₃)/银(Ag)/三氧化钼(MoO₃),来进一步验证模拟计算运用在器件制备中的准确性。MoO₃(10 nm)/Ag(10 nm)/MoO₃(25 nm)在532 nm处的透射率达到最大值88.256%,以该透明电极制备的器件与参考器件相比,性能有了明显提高,最大亮度和最大效率分别为20 076 cd/m²和4.03 cd/A,提高了18.5%和56%。器件性能的提高归因于顶发射OLED器件透射率的提高和MoO₃对空穴注入能力的提升。     

ELECTROREFLECTANCE SPECTRA OF GexSi1-x/Si STRAINED LAYER MULTIPLE-QUANTUM WELLS

We have investigated the optical transitions above the fundamental gap of a set of Ge_xSi_1-x/Si strained layer multiple-quantum wells by electroreflectance (ER). The sam-ples were grown by molecular beam espitaxy (MBE). The thickness of the strained layer of Ge_xSi_1-x was 5nm with Ge concentration x in the range from 0.4 to 0.5, and the Si barrier layer greater than 16nm. Considering the energy shift caused by strain and quantum well confinement, we were able to clearly recognize the transitions from different quantum well structures associated with the critical points E₀, E′₀, and E₁. The transitions of the critical points E₀ and E′₀, which are very weak in bulk mateials, are apparently enhanced in the quantum well structures.     

微通道板离子壁垒膜粒子阻透特性的蒙特卡罗模拟

在三代微光像管中,微通道板(MCP)输入面上覆盖一层超薄离子壁垒膜(IBF),目的是保护光电阴极,延长像管使用寿命.为了深入研究离子壁垒膜的特性,本文对Al2O3和SiO2两种离子壁垒膜的粒子阻透能力进行了蒙特卡罗模拟,结果表明:5 nm厚Al2O3和SiO2离子壁垒膜的死电压分别为230 ～240 V和220～230...     

Kinetic interface roughening and magneto resistance of sputter-deposited Fe/Ni75B25 multilayers

The roughening of interfaces as a function of layer thickness and magneto transport properties have been investigated on sputter-deposited Fe/Ni₇₅B₂₅ multilayer films. X-ray reflectivity data were recorded for Ni₇₅B₂₅(72 nm) film and for [Fe(2 nm)/Ni₇₅B₂₅(2 nm)]₁₆ and [Fe(4 nm)/Ni₇₅B₂₅(4 nm)]₈ multilayer films. A power law dependence of the interfacial width of growing Fe/Ni₇₅B₂₅ interfaces was observed. The resulting growth exponents β were found to be in the range of 0.55–0.58 in the initial growth stage of the multilayer with lower Fe/Ni₇₅B₂₅ repetition thickness and at approximately 0.34 for multilayer with higher repetition thickness. The growth exponents were compared with theoretical calculations. High resolution electron microscopy revealed the columnar growth of the Fe/Ni₇₅B₂₅ multilayer. Additionally, an increase of magnetoresistance was observed by the multilayering of Ni₇₅B₂₅ films with Fe interlayers.     

蓝色有机发光材料LiBq4的合成及其发光特性

蓝色有机发光材料的开发对于实现有机发光二极管(OLED)的全彩色化具有十分重要的意义.报道了蓝色有机发光材料8-羟基喹啉硼化锂(LiBq₄)的合成及提纯,研究了LiBq₄的光致发光特性,并用LiBq₄作为发光材料制备了蓝色有机发光器件,研究了电子传输层Alq₃的厚度及空穴缓冲层CuPc对器件电流-电压和亮度-电压特性的影响.结果表明,LiBq₄的光致发光峰值波长为452nm,器件ITO/PVK:TPD/LiBq₄/Alq₃/Al的电致发光光谱峰值波长位于475nm处,在25V工作电压下其最高亮度约为430cd/m².但CuPc的加入加剧了器件中载流子的不平衡注入,导致器件性能恶化.通过调整Alq₃的厚度,同时在Alq₃和Al阴极之间加入LiF薄膜以提高电子注入效率,获得了较为理想的实验结果.     

激光辐照VO2薄膜温度场分布及透射特性研究

为了探究VO₂薄膜受激光辐照的温度场分布,以及1 064 nm激光直接辐照100 s内至相变的激光功率密度阈值,并比较近红外和中红外波段透过率调制特性差异。首先基于COMSOL建立了薄膜受激光辐照的模型并进行了温度场仿真,然后分别测试了薄膜正反面被不同功率密度的1 064 nm激光辐照100 s内激光透过率随时间响应特性。实验中的VO₂薄膜利用分子束外延法在Al₂O₃基底上制备得到。仿真结果表明,激光功率密度为25 W·mm^-2时,50 nm厚薄膜在被辐照1 ms时间内即达到相变温度。经激光辐照实验发现:50 nm厚的VO₂薄膜正反面受1 064 nm激光直接辐照100 s内至相变的功率密度阈值分别为4.1 W·mm^-2和5.39 W·mm^-2。30 nm厚VO₂薄膜对1 064 nmn激光的透过率调制深度约为13%,对3 459 nm激光透过率调制深度约62%,说明VO₂薄膜对近红外透过率调制特性不明显。     

中性和阳离子丁酮团簇的结构及稳定性的理论研究

使用密度泛函B3LYP方法,在6-31G*和6-311+G**基组水平上计算中性和阳离子丁酮团簇(CH_3COC_2H_5)_n和(CH_3COC_2H_5)_n~+(n 7)的稳定结构,并比较不同尺寸团簇之间的相对稳定性.中性和阳离子丁酮团簇的结构具有相似性:n=3—7时,组成团簇的丁酮的平均几何参数基本相同,单环结构最稳定;随着团簇尺寸的增加,双环结构的稳定性逐渐上升.通过平均结合能、一阶差分能、HOMO-LUMO能隙等计算分析可知:在所研究的各种尺寸团簇中,(CH_3COC_2H_5)_3是最稳定的中性团簇,与实验中的最强峰对应;(CH_3COC_2H_5)_4~+是最稳定的阳离子团簇.通过电离能计算得到丁酮分子的垂直电离能为9.535 eV与实验值相符,同时证明中性和阳离子丁酮二元团簇的结构变化较大.研究结果为实验中丁酮团簇碎片离子的形成机理提供一定的理论依据,并且为进一步研究酮类分子团簇的生长规律提供有价值的信息.     

高质量FeSe单晶薄膜的制备及相关性能表征

在铁基超导体中,FeSe具有最简单的晶体结构和化学组成,而且其超导转变温度具有较大的调控空间,因此适合作为超导机理研究和应用的载体.高质量样品的研制是物性研究和器件应用的前提,本文系统地研究了利用激光脉冲沉积技术制备FeSe薄膜的工艺条件,在多种衬底上成功地制备出高质量的β-FeSe薄膜,并首次实现了超导临界转变温度从小于2 K到14 K的连续调控,这为FeSe超导机理研究提供了样品支持.为探究FeSe薄膜超导电性变化的起因,从β-FeSe超导电性与晶格常数c正相关出发,基于简单的费米面填充假设,第一性原理计算可以很好地解释晶格常数c的变化规律,但该假设并不能完全符合角分辨光电子能谱实验给出的电子结构演变过程.因此β-FeSe薄膜的超导电性、晶格结构和电子结构三者之间的关系还有待澄清,该问题的解决将为FeSe超导机理研究提供重要的线索,而上述系列高质量的β-FeSe薄膜样品恰好能为该问题的研究提供理想的载体.本文根据实验和已有的相关研究结果,详细介绍了FeSe薄膜的脉冲激光沉积制备及其优化,以期为后续的薄膜研究应用提供参考.     

离子束溅射制备低应力深紫外光学薄膜

采用离子束溅射制备了Al F3、Gd F3单层膜及193 nm减反和高反膜系,分别使用分光光度计、原子力显微镜和应力仪研究了薄膜的光学特性、微观结构以及残余应力。在优选的沉积参数下制备出消光系数分别为1.1×10~(-4)和3.0×10~(-4)的低损耗AlF_3和GdF_3薄膜,对应的折射率分别为1.43和1.67,193 nm减反膜系的透过率为99.6%,剩余反射几乎为零,而高反膜系的反射率为99.2%,透过率为0.1%。应力测量结果表明,AlF_3薄膜表现为张应力而GdF_3薄膜具有压应力,与沉积条件相关的低生长应力是AlF_3和GdF_3薄膜残余应力较小的主要原因,采用这两种材料制备的减反及高反膜系应力均低于50 MPa。针对平面和曲率半径为240 mm的凸面元件,通过设计修正挡板,250 mm口径膜厚均匀性均优于97%。为亚纳米精度的平面元件镀制193 nm减反膜系,镀膜后RMS由0.177 nm变为0.219 nm。     

Anomalous strain effect in heteroepitaxial SrRuO3 films on (111) SrTiO3 substrates

We report comprehensive investigations into the structure of high-quality (111)-oriented SrRuO₃ films on SrTiO₃ substrates to elucidate the effect of (111) heteroepitaxial strain. We found that SrRuO₃ film with a thickness of ～ 40 nm is compressively strained in plane on the substrate with full coherency. Nevertheless, the out-of-plane spacing is almost the same as in the bulk, which is at odds with the conventional paradigm. By probing a series of half-order Bragg reflections using synchrotron-based x-ray diffraction combined with analyses of the scanning transmission electron microscopy images, we discovered that the heteroepitaxial strain is accommodated via significant suppression of the degree of c⁺ octahedral tilting and the formation of three equivalent domain structures on the (111) SrTiO₃ substrate. This anomalous effect sheds light on the understanding of an unconventional paradigm of film-substrate coupling for the (111) heteroepitaxial strain.     

Properties of rubidium nitrate in ion-conducting RbNO3-Al2O3 nanocomposites

Properties of RbNO₃ in (1 − x)RbNO₃-xAl₂O₃ nanocomposites were studied by X-ray powder diffraction, electron diffraction, conductivity measurements, infrared and Raman spectroscopy, and differential scanning calorimetry. All the experimental techniques used indicate the presence of an amorphous RbNO₃ layer at the RbNO₃---Al₂O₃ interface in addition to a crystalline RbNO₃ phase. Its concentration was determined from the phase transition enthalpies. The amorphous layer thickness estimated by means of a simple brick-wall model is 4 nm.     

YMnO_3薄膜的铁电行为及其纳米尺度铁电畴的研究

六方YMnO_3是一种特殊的多铁性材料,因其具有介电常数低、单一极化轴、无挥发性元素等特点,在磁电领域具有独特的优势,但目前关于YMnO_3薄膜的铁电性特别是畴结构的研究相对较少.本文采用溶胶-凝胶法在Si(100)基片上制备了多铁性YMnO_3薄膜,利用掠入射X-射线衍射、原子力显微镜对薄膜的结构及表面形貌进行了分析,用压力显微镜(PFM)技术研究了纳米尺度畴结构及微区电滞行为,并通过I-V,P-E曲线进一步研究了薄膜的漏电流和宏观电滞行为.结果表明,该薄膜为六方钙钛矿结构,YMnO_3晶粒大小均匀并且结晶性较好,薄膜表面粗糙度为7.209 nm.PFM图显示出清晰的电畴结构,结合典型的微区振幅蝴蝶曲线和相位电滞回线,证实该YMnO_3薄膜具有较好的铁电性.由于受内建电场的作用,振幅曲线和相位曲线都向正向偏移,表现出非对称特征.该薄膜的漏电流密度低于10~(-6)A·cm~(-2),因而其电滞回线基本能够达到饱和.     

Microstructure and transport properties of YBa2Cu3O7−δ films produced by laser ablation from a BaF2/Y2O3/CuO target

The effects of varying the temperature and duration of the post-deposition anneal in watersaturated oxygen were investigated for YBa₂Cu₃O_7−δ films of varying thickness. The films were produced by laser ablation from pressed powder targets consisting of BaF₂,Y₂O₃, and CuO mixtures. This technique produces superconducting films with a highly textured surface. The films were fabricated on SrTiO₃ substrates and were analyzed with X-ray diffraction, scanning electron microscopy, and temperature dependent resistivity. Critical current density (J_c) measurements were performed in magnetic fields up to 1 T. For film thickness on the order of 900 nm, completely c-axis oriented films were obtained with a 60 min anneal at 850°C. Thinner films required less annealing, either shorter times or lower temperatures, to achieve similar results, indicating that the optimal annealing conditions are dependent on film thickness.     

Electrodeposited Co-Pt thin films for magnetic hard disks

ew baths for Co-Pt electrodeposition have been developed and developed and ECD thin films (≤0.3μm) have been prepared and characterized structurally (XRD), morphologically (SEM), chemically (EDS) and magnetically (VSM); their improved corrosion, oxidation and wear resistance have been ascertained. Such alloys appear suitable candidates for magnetic storage systems, from all technological viewpoints. The originally formulated baths contain Co-NH₃-citrate complexes and Pt-p salt (Pt(NH₃)₂(NO₂)₂). Co-Pt thin films of fcc structure are deposited obtaining microcrystallites of definite composition. At Pt 30 at% we obtain fcc films with a=0.369 nm, H_C=80 kA m, and high squareness; increasing Co and decreasing Pt content in the bath it is possible to reduce the Pt content of the deposit, obtaining fcc structures containing two types of microcrystals with a = 0.3615 nm and a = 0.369 nm deposited simultaneously. NaH₂PO₂ additions to the bath have a stabilizing influence on the fcc structure of a = 0.3615 nm, Pt 20 at% and H_C as high as 200 kA/m, with hysteresis loops suitable for both longitudinal or perpendicular recording, depending on the thickness. We have prepared 2.5 in. hard disks for magnetic recording with ECD Co-Pt 20 at% with a polished and texturized ACD Ni-P underlayer. Pulse response, 1F & 2F frequency and frequency sweep response behaviour, as well as noise and overwrite characteristics have been measured for both our disks and high-standard sputtered Co-Cr-Ta production disks, showin improved D₅₀ for Co-Pt ECD disks. The signal-to-noise ratio could be improved by pulse electrodeposition and etching post-treatments.     

薄膜厚度对射频磁控溅射β-Ga2O3薄膜光电性能的影响

本文在室温下利用射频磁控溅射技术在(001)蓝宝石衬底上制备了不同厚度的β-Ga₂O₃薄膜,随后将其置于氩气气氛中800℃退火1 h.利用XRD,SEM,UV-Vis分光光度计、PL光致发光光谱仪和Keithley 4200-SCS半导体表征系统等考察薄膜厚度对所得氧化镓薄膜相组成、表面形貌、光学性能以及光电探测性能的影响.结果表明,随着薄膜厚度的增加,薄膜结晶质量提高,840 nm薄膜最佳,1050 nm薄膜结晶质量略有降低.不同厚度β-Ga₂O₃薄膜在波长200—300 nm日盲区域内均具有明显的紫外光吸收,禁带宽度随着薄膜厚度的增加而增加.PL谱中各发光峰峰强随着薄膜厚度的增加而减小,表明氧空位及其相关缺陷受到抑制.在β-Ga₂O₃薄膜基础上制备出日盲紫外光电探测器的探测性能(光暗电流比,响应度,探测率,外量子效率)也随薄膜厚度的增加呈先增后减的趋势.厚度约为840 nm的β-Ga₂O₃紫外光电探测器,在5...     

MgB2超导膜的厚度与其Jc(5K,0T)的关系

通过混合物理化学气相沉积法 (hybrid physical-chemical vapor deposition, HPCVD), 在(000l) SiC 衬底上制得一系列从10 nm到8 μm的MgB₂超导膜样品, 并对它们的形貌、超导转变温度T_c 和临界电流密度J_c与膜厚度的关系进行了研究. 观察到T_c随膜厚度增加上升到最大值后, 尽管膜继续增厚, 但T_c值保持近乎平稳, 而J_c则先随膜厚度增加上升到最高值后, 继而则随膜的厚度的增加而下降. MgB₂膜的T_c(0)和T_c(onset)值与膜厚的关系基本一致, T_c(0)在膜厚为230 nm处达到最大值T_c(0)=41.4 K, 而J_c(5K,0T)在膜厚为100 nm时达到最大值, J_c (5 K, 0 T)=2.3×10⁸A·cm^-2, 这也说明了我们能用HPCVD方法制备出高质量干净MgB₂超导膜. 本文研究的超导膜厚度变化跨度非常大, 从10 nm级的超薄膜到100 nm级的薄膜, 再到几微米的厚膜, 如此T_c和J_c对膜厚度变化的依赖就有了较完整、成体系的研究. 并且本文的工作对MgB₂超导薄膜制备的厚度选取具有实际应用意义. 关键词： 2超导膜')" href="#">MgB₂超导膜 混合物理化学气相沉积法 厚度 临界电流密度     

垂直磁各向异性L10-Mn1.67Ga超薄膜分子束外延生长与磁性研究

具有超强垂直磁各向异性的L1₀-Mn_xGa薄膜由于其与半导体材料结构及工艺的高度兼容性而受到广泛关注, 其超高垂直磁各向异性能和极低的磁阻尼因子预示着L1₀-Mn_xGa薄膜在高热稳定性自旋电子学器件中将发挥重要作用. 而L1₀-Mn_xGa超薄膜对于降低L1₀-Mn_xGa基垂直磁各向异性隧道结中的磁矩翻转临界电流密度有着重要的意义. 本文采用分子束外延的方法, 在半导体GaAs衬底上成功制备出了一系列不同厚度的L1₀-Mn_1.67Ga薄膜, 厚度范围为1-5 nm. 生长过程中反射式高能电子衍射原位检测以及X射线衍射结果均表明了其良好的单晶相. 磁性测量结果表明, 厚度在1 nm以上的L1₀-Mn_1.67Ga薄膜均可以保持垂直磁各向异性特征, 厚度为5 nm的L1₀-Mn_1.67Ga薄膜的垂直磁各向异性能可达到14.7 Merg/cm³. 这些结果为基于L1₀-Mn_1.67Ga的垂直磁各向异性隧道结在自旋转移扭矩驱动的磁随机存储器等低功耗器件的集成及应用提供了重要的实验支持.     

Sub-Doppler spectroscopy by sub-micron thin Cs vapour layer

A unique extremely thin cell (ETC) with the thickness of Cs atomic vapour layer in the range of 150–300 nm has been developed for the first time. All six hyperfine transitions of D₂ line (852 nm) of Cs, i.e. 6S_1/2(F=3)→6P_3/2(F=2–4) and 6S_1/2(F=4)→6P_3/2(F=3–5) are very well resolved in the transmission and fluorescence spectra, whereas in a cell of usual length they are not resolved due to Doppler broadening. It is demonstrated that a robust and widely used simple laser-diode technique is enough to observe separately atomic hyperfine transitions at the intensity up to 100 mW/cm² thanks to the ETC usage. We report also the first results obtained with the new ETC of 300 nm thickness filled with natural Rb. The usage of ETC allowed us to completely resolve each particular hyperfine transition of both ⁸⁵Rb and ⁸⁷Rb isotopes in D₁ line fluorescence spectrum.     

Inverted polymer solar cells with employing of electrochemical-anodizing synthesized TiO_2 nanotubes

An inverted structure of polymer solar cells based on Poly(3-hexylthiophene)(P3HT):[6-6] Phenyl-(6) butyric acid methyl ester(PCBM) with using thin films of TiO_2 nanotubes and nanoparticles as an efficient cathode buffer layer is developed. A total of three cells employing TiO_2 thin films with different thickness values are fabricated. Two cells use layers of TiO_2 nanotubes prepared via self-organized electrochemical-anodizing leading to thickness values of 203 and 423.7 nm, while the other cell uses only a simple sol–gel synthesized TiO_2 thin film of nanoparticles with a thickness of 100 nm as electron transport layer. Experimental results demonstrate that TiO_2 nanotubes with these thickness values are inefficient as the power conversion efficiency of the cell using 100-nm TiO_2 thin film is 1.55%, which is more than the best power conversion efficiency of other cells. This can be a result of the weakness of the electrochemical anodizing method to grow nanotubes with lower thickness values. In fact as the TiO_2 nanotubes grow in length the series resistance(Rs) between the active polymer layer and electron transport layer increases, meanwhile the fill factor of cells falls dramatically which finally downgrades the power conversion efficiency of the cells as the fill factor falls.     

超薄EuF3电极修饰层对有机场效应晶体管性能的提升

采用EuF₃薄层修饰低功函数金属Ag源、漏电极,制备了CuPc有机场效应晶体管,研究了不同厚度EuF₃对器件性能的影响。结果表明,EuF₃的厚度由0 nm增至0.6 nm时,接触电阻由23.65×10⁵ Ω·cm减 至3.86×10⁵ Ω·cm,使得器件载流子迁移率由1.5×10^-3 cm²·V^-1·s^-1提高到4.65×10^-3 cm²·V^-1·s^-1。 UPS测试结果表明,薄层EuF₃在Ag与有机半导体间形成了界面偶极势垒,使源漏电极表面功函数增大,空穴注入势垒降低,Ag电极与有机半导体层界面的接触电阻减小,进而提升了空穴的注入效率。