Magnetic structure of Er<Subscript>5</Subscript>Ge<Subscript>3</Subscript> at 4.2 K

A symmetry analysis of the possible magnetic structures of Er₅Ge₃ in the ground state is performed using the results of measurements of elastic magnetic neutron scattering at 4.2 K. It is shown that the minimum discrepancy factor R _m ≈9.5% corresponds to a modulated collinear magnetic structure in which the magnetic moments of erbium atoms are oriented along the a ₃ axis of the unit cell of the crystal structure and induce an antiferromagnetic longitudinal spin wave (AFLSW). The magnetic structure is characterized by the wave vector k=2π(0, 0, μ /a ₃) (where μ≈0.293) and the modulation period λ≈3.413a ₃. The magnetic ordering temperature T _N ≈38 K is determined from the temperature dependence of the intensity of magnetic reflections. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 9, 2003, pp. 1653–1659. Original Russian Text Copyright ? 2003 by Vokhmyanin, Dorofeev.     

Crystallographic characteristics and phase transitions in the [N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>CdBr<Subscript>4</Subscript> crystal in the low-temperature range

The results of x-ray structural studies of the [N(C₂H₅)₄]₂CdBr₄ crystal at low temperatures are presented. The unit cell parameters and the thermal expansion coefficients along the main crystallographic directions are measured at temperatures in the range from 90 to 320 K. The integrated intensities of the diffraction reflections are investigated as a function of the temperature. It is shown that the curves a = f(T), c = f(T), I ₅₀₀ = f(T), and I ₀₀₆ = f(T) at temperatures T ₁ ≈ 174 K and T ₂ ≈ 226 K exhibit anomalies in the form of abrupt changes in the lattice parameters and the diffraction reflection intensities. This indicates that the [N(C₂H₅)₄]₂CdBr₄ crystal undergo phase transitions at these temperatures. Moreover, there is an anomaly in the form of a small maximum at the temperature T ₃ = 293 K.     

Photoinduced submillimeter-wave amplitude diffraction grating in a semiconducting CdF<Subscript>2</Subscript>:Ga crystal

It is shown that exposure of an additively colored CdF₂:Ga crystal with bistable DX centers that is slowly cooled to 150 K to blue-green light through a slotted mask produces a submillimeter-wave diffraction grating, which persists for a long time at temperatures of 160–240 K. It is also shown that the diffraction grating induced in a sample is an amplitude grating. The absorption of submillimeter waves in illuminated regions of the sample is associated with the conductivity due to the transition of impurity centers to a metastable donor state. In the n-i-n-i-type conducting structure obtained, the conductivity of n-type regions at 225 K amounts to σ ′ ≈ 0.24 Ω^?1 cm^?1.     

Metal-insulator transition in Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S crystals

Results of an experimental study of MnS, FeS, and Fe _x Mn_1?x S single crystals are presented. The phase composition, the lattice parameters, and the state of paramagnetic ions in Fe _x Mn_1?x S have been determined by x-ray diffraction analysis and Mössbauer spectroscopy. A sequence of transitions have been found in iron manganese sulfide with x = 0.29 at temperatures T ₁ ≈ 25–50 K, T ₂ ≈ 125 K, and T ₃ ≈ 190 K with a change in kinetic properties and the formation of a metallic state at low temperatures T ≈ 2 K. The possibility of a Mott-Hubbard transition in Fe _x Mn_1?x S sulfides with variation of the composition and the temperature is discussed.     

Determination of absolute chirality using resonant X-ray diffraction

We have demonstrated that resonant diffraction experiments using the circularly polarized X-ray beam absolutely determines the crystal chirality. Both berlinite and quartz crystals belonging to space group P3₂21 show higher azimuth-constant intensity for the negative (?) helicity beam than that for the the positive (+) helicity beam for space-group forbidden reflection 001. The relation is opposite for quartz crystal belonging to space group P3₁21. Theoretical calculation shows that this relation completely agrees with the experimental findings for the enantiomorphic space-group pair P3₁21 and P3₂21. This method is applicable to chiral motifs that occur in biomolecules, liquid crystals, ferroelectrics, and multiferroics, etc.     

Zero differential resistance of a two-dimensional electron gas in a one-dimensional periodic potential at high filling factors

The nonlinear magnetotransport of a two-dimensional (2D) electron gas in one-dimensional lateral superlattices based on a selectively doped GaAs/AlAs heterostructure is studied. The one-dimensional potential modulation of the 2D electron gas is performed by means of a series of metallic strips formed on the surface of a heterostructure with the use of electron beam lithography and a lift-off process. The dependence of the differential resistance r_xx on the magnetic field B < 1.5T in superlattices with the period a = 400 nm at a temperature of T = 4.2 K is investigated. It is found that electronic states with r_xx ≈ 0 appear in one-dimensional lateral superlattices in crossed electric and magnetic fields. It is shown that states with r_xx ≈ 0 in 2D electronic systems with one-dimensional periodic modulation arise at the minima of commensurability oscillations of the magnetoresistance.     

Successive structural phase transitions in Pr<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>CoO<Subscript>3</Subscript> in the range 10–1120 K

The crystal and magnetic structures of the Pr_0.5Sr_0.5CoO₃ metallic ferromagnet have been studied using neutron diffraction and synchrotron radiation. Successive structural transitions with the reduction of the crystal symmetry from cubic (space group Pm3m) to rhombohedral (\(R\bar 3c\), ～800 K), orthorhombic (Imma, ～300 K) and, then, to triclinic at ～120 K are detected during cooling from 1120 K. The transition from the orthorhombic system to a phase with a lower symmetry is characterized by a sharp change in the anisotropy of the unit cell, which indicates the partial ordering of the e _g orbitals of cobalt. The accompanying change in the interatomic distances and valence angles give rise to an anomaly in the temperature dependence of the magnetic susceptibility at T ≈ 120 K. The ordered magnetic moment μ_Co ≈ 2μ_B corresponds to the assumption of the intermediate spin state of Co³⁺ ions and the mixture of low- and intermediate-spin states of Co⁴⁺ ions.     

Pressure-induced antiferromagnetism in La<Subscript>0.75</Subscript>Ca<Subscript>0.25</Subscript>MnO<Subscript>3</Subscript> manganite

The crystal and magnetic structures of La_0.75Ca_0.25MnO₃ manganite are studied under high pressures up to 4.5 GPa in the temperature range 12–300 K by the neutron diffraction method. At normal pressure and temperature T _C = 240 K, a ferromagnetic state is formed in La_0.75Ca_0.25MnO₃. At high pressures P ≥ 1.5 GPa and at temperatures T < T _N ≈ 150 K, a new A-type antiferromagnetic state appears. A further increase in pressure leads to an increase in the volume fraction of the antiferromagnetic phase, which coexists with the initial ferromagnetic phase. The effect of high pressure causes a considerable increase in T _C with the slope dT _C /dP ≈ 12 K/GPa. Calculations performed in the framework of the double exchange model with allowance for the electron-phonon interaction make it possible to explain this pressure dependence of T _C on the basis of experimental data.     

Optical and dielectric studies of phase transitions in single crystals of NaNbO<Subscript>3</Subscript>-Gd<Subscript>1/3</Subscript>NbO<Subscript>3</Subscript> solid solutions

The temperature dependences of the permittivity ? and the false-color image patterns obtained by the rotating polarizer method for single crystals of (1 ? x)NaNbO_3?x Gd_1/3NbO₃ (x = 0.003, 0.090) solid solutions with different degrees of diffuseness of the phase transition are investigated. A multifractal analysis of the false-color images has revealed anomalies in the temperature dependences of the parameter ?_∞ of the multifractal spectrum. For a sample with a sharp phase transition (x ≈ 0.003), the temperature of this anomaly is in good agreement with the temperature of the jumps in the permittivity ?(T) and birefringence. For an NNG crystal with x ≈ 0.09, which exhibits a diffuse maximum of ?(T), the temperatures of the anomalies of ?_∞(T) differ in the central and peripheral regions, which correlates with the distribution of Gd over the crystal.     

Photoinduced semiconductor-metal phase transition in a peierls system

The dynamical equation for the order parameter of the metal-semiconductor phase transition, as well as the kinetic equation for the density of nonequilibrium electron-hole pairs of a Peierls system in a light field, has been derived. An expression for the time τ of the nonthermal photoinduced semiconductor-metal phase transition has been obtained from these equations for the case of an ultrashort light pulse. It has been shown that, to initiate the phase transition, the energy density W of the light pulse must be higher than the critical value W _c. The W _c, τ, and optical absorption coefficient γ₀ that are calculated in the framework of the proposed model are in agreement with the experimental data (W _c ≈ 12 mJ/cm², τ ≈ 75 fs, and γ₀ ≈ 10⁵ cm^?1) on the irradiation of a vanadium dioxide film by a laser pulse with a duration of τ_p ≈ 15 fs, a photon energy of ?θ₀ = 1.6 eV, and an energy density of W = 50 mJ/cm².     

Multiferroic properties and structural features of <Emphasis Type="Italic">M</Emphasis>-type Al-substituted barium hexaferrites

Precise studies of the crystal and magnetic structures of M-type substituted barium hexaferrites BaFe_12–x Al _x O₁₉ (0.1 ≤ x ≤ 1.2) have been performed by powder neutron diffraction in the temperature range 300–730 K. The electric polarization and the magnetization, and also the magnetoelectric effect of the compositions under study have been studied in electric (to 110 kV/m) and magnetic (to 14 T) fields at room temperature. The spontaneous polarization and significant correlation between the dielectric and magnetic subsystems have been observed at room temperature. The magnetoelectric effect value is, on average, about 5%, and it increases slightly with the aluminum cation concentration. The precise structural studies made it possible to reveal the cause and the mechanism of formation of the spontaneous polarization in M-type substituted barium hexaferrites BaFe_12–x Al _x O₁₉ (x ≤ 1.2) with a collinear ferromagnetic structure.     

Magnetic and transport properties of colossal magnetoresistance compound EuB<Subscript>6</Subscript>

The galvanomagnetic and magnetic properties of EuB₆ single crystal have been measured over wide temperature (1.8–300 K) and magnetic-field (up to 70 kOe) ranges, and the parameters of charge carriers and the characteristics of the magnetic subsystem are estimated in the paramagnetic and ferromagnetic (T < T _C ≈ 13.9 K) phases of this compound with strong electron correlations. In the temperature range T < T* ≈ 80 K, a magnetoresistance hysteresis Δρ(H)/ρ(0) is detected; it reaches a maximum amplitude of about 5% at T ≈ 12 K. The anomalies of charge transport observed in the temperature range T _C < T < T* are shown to be related to the magnetic scattering of charge carriers (m _eff = (15–30)m ₀, where m ₀ is the free-electron mass) that results from a short-range magnetic order appearing upon the formation of ferromagnetic nanoregions (ferrons).     

Crystal-structure and magnetic phase transformations in solid solutions of BiFeO<Subscript>3</Subscript>-AFe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> (A = Ca,Sr, Ba,Pb)

Solid solutions of Bi_{1 ? x} A _x (Fe_{1 ? x/2}Nb _x/2)O₃, where A = Ca, Ba, and Pb, are obtained and their crystal structure and magnetic properties are investigated. It is shown that for A = Ca and x ≈ 0.15, the symmetry of the unit cell changes from rhombohedral (space group R3c) to orthorhombic (Pbnm). The transformation leads to the emergence of spontaneous magnetization due to the Dzyaloshinskii-Moriya interaction. Solid solutions with A = Pb remain rhombohedral up to a concentration of x = 0.3. Spontaneous magnetization sharply increases in the compound with x ≈ 1 at low temperatures and is due to the formation of the spin-glass component.     

Acousto-optic diffraction in hematite due to the magnetoelastic modulation of the polarizations of optical modes

Acousto-optic diffraction in the Raman-Nath regime is observed in the α-Fe₂O₃ easy-plane antiferromagnet. This diffraction is caused by the magnetoelastic modulation of the polarizations of normal optical modes propagating along the trigonal axis of the crystal. The diffraction parameters are analyzed as functions of the static magnetic field applied in the basal plane. The intensity of the diffraction wave in fields on the order of the monodomainization field of the samples (H _D ≈ 1.8 kOe), at an acoustic flux power of I _S ～ 7.0 W/cm², was approximately 0.11% of the incident light intensity and its polarization was perpendicular to the polarization of the linearly polarized incident wave. It is shown that the observed intensity is comparable with the intensity of the acousto-optic diffraction in nonmagnetic materials. The results are well described by the theory of acoustooptic diffraction in antiferromagnets {E. A. Turov, Zh. Éksp. Teor. Fiz. 112, 1464 (1997) [JETP 85, 797 (1997)]} and confirm its basic conclusions.     

Formation of textured Ni(200) and Ni(111) films by magnetron sputtering

The effect of the working gas pressure (P ≈ 1.33–0.09 Pa) and the substrate temperature (T_s ≈ 77–550 K) on the texture and the microstructure of nickel films deposited by magnetron sputtering onto SiO₂/Si substrates is studied. Ni(200) films with a transition type of microstructure are shown to form at growth parameters P ≈ 0.13–0.09 Pa and T_s ≈ 300–550 K, which ensure a high migration ability of nickel adatoms on a substrate. This transition type is characterized by a change of the film structure from quasi-homogeneous to quasi-columnar when a film reaches a critical thickness. Ni(111) films with a columnar microstructure and high porosity form at a low migration ability, which takes place at P ≈ 1.33–0.3 Pa or upon cooling a substrate to T_s ≈ 77 K.     

Self-consistent inhomogeneity of quantum wells in II–VI semiconductors

An X-ray diffraction method that uses a slightly diverging (3′) beam and maximally attainable diffraction angles ? _B (as large as 77°) was developed to study quantum wells (QWs) with widths of 5–8 nm separated by wide (100–220 nm) barrier layers. The advantage of this method compared to the use of a parallel beam is an increase by two orders of magnitude in the intensity of the beam incident on the sample and an increase in the probability of diffraction for all QWs as a unified single crystal. It is found that the growth on GaAs substrates misoriented by 10° from the (001) plane in the [111]_II direction brings about monoclinization of crystal lattices of the QW layers and barrier layers in opposite directions. Inhomogeneity of composition over the thickness of each well is observed. In the case of growth of a ZnSe/ZnMgSSe structure in which the layers have a crystal-lattice period close to the lattice period of the GaAs substrate, the QWs are inhomogeneously doped with elements from the composition of the barrier layers. The inhomogeneity of QW composition observed in the growth of mismatched layers in ZnCdSe/ZnSSe and ZnCdS/ZnSSe structures is caused by the fact that mismatch between the lattice parameters of QWs and barriers stimulates the growth of self-consistent compositions; this occurs due to a decrease in the Cd concentration in the Zn_1?x Cd _x Se QW in the initial stages of growth compared to the Cd concentration in the flow of gases and an increase in the Zn concentration in the Cd_1?x Zn _x S QW at small values of x up to the concentration matching GaAs (x = 0.4). The mismatch stresses are partially relaxed via dislocations with the (111)_II glide planes, as a result of which is observed the combination of rotation of the crystal planes of the layers and QW around the [1\(\overline 1 \)0] axis and almost cylindrical bending of the entire sample around the perpendicular [110] axis. Mismatch between lattice parameters of the ZnMgSSe barrier layers and the substrate brings about decomposition of these layers into two phases; this decomposition is caused by thermodynamic instability of the alloy.     

Phase transition in the vortex structure of granular YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7 − δ</Subscript> HTSCs in weak magnetic fields

This study aims at establishing the interrelation between the current-carrying capacity and peculiarities of magnetoresistance of granular YBa₂Cu₃O_{7 ? δ} HTSCs (T _c = 92.5 K). The transverse magnetoresistance of several batches of YBa₂Cu₃O_{7 ? δ} HTSC samples with noticeably different values of critical supercurrent density j _c is measured in magnetic fields H _ext up to H _ext ^max ≈ 500 Oe in a wide range of transport currents (5 mA ≤ I ≤ 1600 mA) at T = 77.4 K. Samples with relatively high values of j _c (H _ext = 0) ≥ 100 A/cm² do not exhibit any anomalies in their field dependences. Magnetoresistance jumps δρ_BG-VG/ρ_273K are observed for samples with low values of j _c ≥ 20 A/cm² in fields H _BG-VG ≈ 200–260 Oe. The width ΔH _BG-VG of the anomalous resistance region increases upon an increase in I. The magnetoresistance jumps decrease with increasing I in increasing field H _ext(0 → H _ext ^max ) and increase in decreasing field H _ext(H _ext ^max → 0). It is found that these peculiarities of the field dependences of magnetoresistance are associated with a first-order phase transition (in magnetic field) in the vortex structure of YBa₂Cu₃O_{7 ? δ} HTSCs of the Bragg glass-vortex glass type.     

A 100 kHz Narrow-Pulse-Width Mid-Infrared Optical Parametric Oscillator Based on PPMgLN Crystal

We report a narrow pulse width optical parametric oscillator based on periodically poled MgO:LiNbO₃ (PPMgLN) with a high repetition rate under quasi-phase matched conditions. When the maximum pumping power of the 1,064-nm laser was 14.57 W, the acousto-optical (A-O) Q-switch repetition rate was 100 kHz, and the PPMgLN crystal grating period was 29.5 μm. A 1,474-nm signal light output power of 4.21 W and a 3,828 nm idler light output power of 1.547 W were obtained, corresponding to a pulse width of 9.52 ns and 9.65 ns, respectively. The overall optical–optical conversion efficiency was 39.5%. Additionally, by changing the temperature from 25°C to 150°C, a tunable signal wavelength of 1,474–1,499 nm and idler wavelength at 3,676–3,828 nm of the output laser were achieved.     

Peculiarities of the magnetic structure of the cryogenic permanent magnet Tb<Subscript>3</Subscript>Co

The magnetic state of the Tb₃Co compound with orthorhombic structure has been investigated by measuring the magnetization in static and pulsed magnetic fields and using neutron diffraction analysis. It is shown that the antiferromagnetic modulated structure, arising in this material at T < T _N = 82 K, passes upon cooling below T _t ≈ 72 K to an incommensurate magnetic structure with a ferromagnetic component along the c axis.     

The Structure of Radiative Tunnel Recombination Sites in Emulsion Microcrystals of AgBr(I)

To identify the structure of emissive tunnel recombination sites in the emulsion microcrystals of silver bromide AgBr(I) with iodine contaminations and to determine the role of an emulsion medium in their formation, the temperature dependence of the luminescence spectra in the range from 77 to 120 K, the kinetics of the growth of the maximum luminescence intensity value at λ ≈ 560 nm, and the luminescence flash spectrum stimulated by the infrared light are investigated. Two types of the AgBr_{1 – x}(I _x ) (x = 0.03) microcrystals—namely, obtained in an aqueous solution and on a gelatin substrate—are used in the studies. It is established that the emissive tunnel recombination sites with a luminescence maximum at λ ≈ 560 nm in AgBr_{1 – x}(I _x ) (x = 0.03) are the {(I _a ^- I _a ^- )Ag _i ⁺ } donor–acceptor complexes with the I _a ^- iodine ions located in neighbor anionic sites of the AgBr(I) crystal lattice, next to which the Ag _i ⁺ interstitial silver ion is positioned. With an increase in the temperature, the {(I _a ^- I _a ^- )Ag _i ⁺ } sites undergo structural transformation into the {(I _a ^- I _a ^- )Ag_in⁺} sites, where n = 2, 3, …. Moreover, the {(I _a ^- I _a ^- )Ag _in ⁺ } sites (n = 2) after the capture of an electron and hole also provide the tunnel recombination with a luminescence maximum at λ ≈ 720 nm. The influence of an emulsion medium consists in that gelatin interacts with the surface electron-localization sites, i.e., the interstitial silver ions Ag _in ⁺ , n = 1, 2, and forms the complexes {Ag _in ⁰ G⁺} (n = 1, 2) with them. The latter are deeper electron traps with a small capture cross section as compared to the Ag _in ⁺ sites (n = 1, 2) and that manifest themselves in that the kinetics of the luminescence growth in AgBr(I) to a stationary level at λ ≈ 560 nm is characterized by the presence of “flash firing.” At the same time, the luminescence flash stimulated by IR light, for which the Ag _in ⁺ (n = 1, 2) electron-localization sites are responsible, is absent. It is supposed that the electrons localized on the {Ag _in ⁺ G⁺} complexes (n = 2) retain the capability for emissive tunnel recombination with holes localized on paired iodine sites with a luminescence maximum at λ ≈ 750 nm.