The behavior of the electron energy bands in solid solutions of GaP and ZnSe

Detailed optical measurements near the band gap of the system GaP-ZnSe have provided evidence for sharp decreases in the energy band gaps for small levels of solution, here studied for compositions close to pure GaP. This is seen for both the indirect gap and the direct gap near the pure GaP end. Similar behavior has been observed in other solid solutions of systems having different valences. Deviations from the behavior proposed by Fischer, Glicksman and Van Vechten are suggested as due to the effect on electron energy states of the effective high density of ions at dilute solution levels.     

Fermi edge polaritons in a microcavity containing a high density two-dimensional electron gas

Sharp, near band gap lines are observed in the reflection and photoluminescence spectra of GaAs/AlGaAs structures consisting of a modulation doped quantum well (MDQW) that contains a high density two-dimensional electron gas (2DEG) and is embedded in a microcavity (MC). The energy dependence of these lines on the MC-confined photon energy shows level anticrossings and Rabi splittings very similar to those observed in systems of undoped QW's embedded in a MC. The spectra are analyzed by calculating the optical susceptibility of the MDQW in the near band gap spectral range and using it within the transfer matrix method. The calculated reflection spectra indicate that the sharp spectral lines are due to k{ parallel}=0 cavity polaritons that are composed of e-h pair excitations just above the 2DEG Fermi edge and are strongly coupled to the MC-confined photons.     

硅的间接跃迁双光子吸收系数谱

利用皮秒Nd:YAG脉冲激光器作为激发光源,测量出光子能量介于1.36 μm (0.912 eV)—1.80 μm (0.689 eV)之间的硅间接跃迁双光子吸收系数谱.尽管此波段范围内的激光光子能量小于硅间接带隙,但当激光辐照在硅基光电二极管受光面时,在二极管两电极端仍然探测到了显著的脉冲光伏信号.光伏信号峰值强度与入射光强呈二次幂函数关系,表明其是双光子吸收过程.采用pn结等效结电容充放电模型,将光伏响应信号峰值与入射光强相关联,从中提取出硅的间接跃迁双光子吸收系数,改变入射波长得到系数谱.研究表明:     

Structure due to indirect exciton in photocurrent spectrum of homoepitaxial diamond film

Photocurrent spectrum in homoepitaxal diamond film formed by chemical vapor deposition has been measured in the photon energy range 5-6 eV of the vicinity of the indirect band gap. It has been seen that the line shape of the spectrum in the photon energy range lower than 5.6 eV agrees with the fundamental absorption edge spectrum in natural diamond. Structures in the spectrum have been explained from the optical transition due to indirect excitons assisted by TO phonons and indirect band-to-band transition.     

A Novel Approach for the Evaluation of Band Gap Energy in Semiconductors

On the basis of absorption nature of semiconductors, we present a novel and simple method to determine the band gap energies of semiconductors directly from their absorption spectra at any temperatures, without any fitting processes and restrictions of sample thickness. The key point of the approach is the different dependence of the absorption coefficient derivative on the photon energy at different absorption regions in semiconductors. We first demonstrate and verify the approach by detailed temperature-dependent absorption measurements, combined with photoluminescence measurements and empirical band gap equations for the direct band gap of uniform InAs films, and then extend successfully to the indirect band gap of elemental Ge and to the ternary HgCdTe alloys with composition gradient. Furthermore, we have also shown that our approach can not only evaluate the average band gap energy for ternary semiconductor alloys, but also estimate their composition uniformity to monitor the material quality.     

点缺陷对单层MoS2电子结构及光学性质的影响研究

采用基于第一性原理的贋势平面波方法,对不同类型点缺陷单层MoS2电子结构、能带结构、态密度和光学性质进行计算。计算结果表明：单层MoS2属于直接带隙半导体,禁带宽度为1.749ev,V-Mo缺陷的存在使得MoS2转化为间接带隙Eg=0.671eV的p型半导体,V-S缺陷MoS2的带隙变窄为Eg=0.974eV,S-Mo缺陷的存在使得MoS2转化为间接带隙Eg=0.482eV; Mo-S缺陷形成Eg=0.969eV直接带隙半导体,费米能级上移靠近价带。 费米能级附近的电子态密度主要由Mo的4d态和s的3p态电子贡献。光学性质计算表明：空位缺陷对MoS2的光学性质影响最为显著,可以增大MoS2的静态介电常数、折射率n0和反射率,降低吸收系数和能量损失。     

Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure

Starting from a model of an indirect optical semiconductor with two bands, the electron states are calculated in the presence of an additional periodic one-dimensional potential (superlattice) in the semiconductor material. These states are used to determine the transition probability connected with the absorption of a photon. This transition corresponds to an optical direct transition — no phonon takes part in this process. The optical direct and optical indirect transitions are compared. For optical frequencies near the band gap one expects only direct transitions, whereby the optical indirect transitions may be neglected.     

Superradiance of a degenerate exciton gas in semiconductors with indirect fundamental absorption edge

It is predicted that superradiant states can be formed in a degenerate exciton gas in a semiconductor with an indirect fundamental absorption edge. The superradiance results from four-particle recombination processes and occurs at photon energies approximately twice as high as the band gap energy. Experimental results supporting the possibility of the observation of superradiance from SiGe/Si quantum wells are presented.     

Direct and indirect two-photon processes in semiconductors

Summary The expressions describing direct and indirect two-photon absorption in crystals are given. They are valid both near and far from the energy gap. A perturbative approach through two different band models is adopted. The effects of the nonparabolicity and the degeneracy of the energy bands are considered. The numerical results are compared with the other theories and with recent experimental data in ZnO and AgCl. It is shown that the dominant transition mechanisms are of the allowed-allowed type near and far from the gap for both direct and indirect processes. Permanent address: Physics and Mathematics Department, Faculty of Engineering, Ain Shams University, Cairo, Egypt.     

Electrical and optical properties of a-SexTe100–x thin films

The dc electrical conductivity of as deposited thin films of a-Se_xTe_100?x (x=3, 6, 9 and 12) is measured as a function of temperature range from 298 to 383 K. It is observed that the dc conductivity increases exponentially with the increase in temperature in this glassy system. The value of activation energy calculated from the slope of ln σ_dc vs. 1000/T plot, is found to decrease on incorporation of dopant (Se) content in the Te system. On the basis of pre-exponetial factor (σ₀), it is suggested that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges. The optical absorption measurements show an indirect optical band gap in this system and it decreases on increasing Se concentration. The optical constants (extinction coefficient (k) and refractive index (n)) do change significantly with the photon energy and also with the dopant Se concentration. The decrease in optical band gap may be due to the decrease in activation energy in the present system. It is also found that the real and imaginary parts of dielectric constants show a significant change with the photon energy as well as with the dopant concentration. With large absorption coefficients and compositional dependence of optical band gap and optical constants (n and k), these materials may be suitable for optical disk applications.     

Electronic Structures of Wurtzite GaN with Ga and N Vacancies

The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show that the band structures can be significantly modified by the Ga and N vacancies in the GaN samples. Generally, the width of the valence band is reduced and the band gap is enlarged. The defect-induced bands can be introduced in the band gap of GMV due to the Ga and N vacancies. Moreover, the GaN with high density of N vacancies becomes an indirect gap semiconductor. Three defect bands due to Ga vacancy defects are created within the band gap and near the top of the valence band. In contrast, the N vacancies introduce four defect bands within the band gap. One is in the vicinity of the top of the valence band, and the others are near the bottom of the conduction band. The physical origin of the defect bands and modification of the band structures due to the Ga and N vacancies are analysed in depth.     

Scattering spectra in orthorhombic indium bromide under resonant excitation

Emission spectra in indirect gap InBr are measured at liquid helium temperature under Ar⁺ laser excitation. They consist of many weak lines up to 20 with LO phonon energy (16.4 meV) spacing. They shift with incident laser lines. Even-numbered lines are stronger than odd-numbered lines. They show resonant enhancements when photon energy of scattered light is near the direct exciton energy, 2.33 eV.     

Surface photovoltage investigations of Cd1−xMnxTe for x = 0.01 and 0.10

Surface photovoltage investigations of Cd_1−xMn_xTe monocrystals for x = 0.01 and 0.10 were performed in the temperature range between 100 and 300 K with a modified Kelvin method at a pressure of 10⁻⁵ Pa. The surfaces with orientation (110) were ground, polished with “Gamal”, and rinsed in acetone and alcohol. Three types of effects were observed on the surface spectroscopy curves: A sharp increase in photovoltage, connected with the electron band-to-band transitions for a photon energy equal to the energy gap. Photovoltage quenching attributed to the existence of surface states with energy just above the edge of the valence band. Increase in photovoltage in the range between 0.9 and 1.0 eV resulting from electron transitions between the valence band and energy states connected with manganese ions.     

The origin of spectral distortion in electric field modulation spectroscopy based on scanning tunneling microscopy

Electric field modulation spectroscopy using scanning tunneling microscopy (STM-EFMS) measurements were performed for a Si(1 1 1) surface with epitaxially-grown β-FeSi₂ islands. STM-EFMS spectra acquired around the indirect energy gap of Si reproduced the photon energy peak position observed in conventional macroscopic EFMS experiments. However, a considerable discrepancy was found in the energy position of the accompanying spectral dip. We examined two possibilities for the cause of this discrepancy. The first interpretation is that the STM-‘EFMS’ spectra may simply reflect the local density of states based on essentially the same principle as that of tunneling spectroscopy. However, this interpretation is ruled out by the facts that almost identical STM-EFMS spectra are obtained also out of the regime of tunneling. The second interpretation is a spectral distortion due to a large electric field steadily built in the sample surface, which is supported experimentally by a spectral shift of the dip energy that is induced by altering the tip-induced band bending.     

立方氮化硼单晶紫外吸收光谱的研究

对于在高温、高压下合成的人工立方氮化硼(cBN)片状单晶进行了紫外吸收光谱和第一性原理的能带结构研究。实验中采用了UV WINLAB光谱分析仪,数据分析由MOLECULAR SPECTROSCOPY软件进行拟合运算,通过特殊的石英夹具对样品的测试表明cBN的紫外吸收波长限为198 nm,带隙为6.26 eV。结合第一性原理计算的cBN的能带结构和电子态密度的计算,可以证实导致紫外光吸收的过程是价带电子吸收光子到导带的间接跃迁。文章实验结果与目前报道的cBN能带结构中禁带宽度的吻合较好,表明cBN具有良好的紫外特性,是一种具有发展前景的紫外光电和高温半导体器件材料。     

Entanglement of a two-level atom and its spontaneous emission near the edge of a photonic band gap

The entanglement of a two-level atom and its radiation field near the edge of a photonic band gap is studied by using the quantum entropy. Unlike the free space case, there is a steady-state entanglement between the atom and its spontaneous emission field even when the atomic transition frequency lies outside the band gap. Moreover, the degree of entanglement, which is due to the formation of atom–photon bound dressed state, depends on the detuning of the atomic transition frequency from the photonic band edge and can be controlled by a controllable photonic band gap crystal.     

Multiple exciton generation in semiconductor nanocrystals: Toward efficient solar energy conversion

Within the range of photon energies illuminating the Earth's surface, absorption of a photon by a conventional photovoltaic semiconductor device results in the production of a single electron‐hole pair; energy of a photon in excess of the semiconductor's bandgap is efficiently converted to heat through interactions between the electron and hole with the crystal lattice. Recently, colloidal semiconductor nanocrystals and nanocrystal films have been shown to exhibit efficient multiple electron‐hole pair generation from a single photon with energy greater than twice the effective band gap. This multiple carrier pair process, referred to as multiple exciton generation (MEG), represents one route to reducing the thermal loss in semiconductor solar cells and may lead to the development of low cost, high efficiency solar energy devices. We review the current experimental and theoretical understanding of MEG, and provide views to the near‐term future for both fundamental research and the development of working devices which exploit MEG.     

4p-4d fano-like resonance in rhodium

Photoemission measurements of Rh films in the photon energy range 40–120 eV show that the 4p-4d intrashell interaction has a Fano-like resonance. The 4d photoemission intensity goes through a sharp dip in the vicinity of the 4p⁶4dⁿ+hv → 4p⁵4dⁿ⁺¹ threshold followed by a resonant enhancement before decreasing again. All parts of the 4d band show the same resonant behavior in contrast to previous resonant photoemission results. The resonant behavior of Rh is compared with Co which is the 3d analog of Rh.     

Effect of γ-irradiation on optical and chemical properties of CR-39 polymer

CR-39 polymer samples were irradiated with γ-irradiation up to dose ranging from 500 to 2000 kGy. The virgin and γ-irradiated polymer samples were investigated using UV–visible spectroscopy and Fourier transform infrared (FTIR) spectroscopy. In the present work, the Urbach energy was calculated using the Urbach edge method. Also, the direct and indirect energy band gaps in virgin and γ-irradiated CR-39 polymer samples were calculated. The values of indirect energy band gap were found to be lower than the corresponding values of direct energy band gap. The decrease in the optical energy band gap with increasing γ-irradiation dose was discussed on the basis of γ-irradiation-induced modifications in CR-39 polymer. The correlation between optical energy band gap and the number of carbon atoms in a cluster with modified Tauc's equation was also discussed. The FTIR spectra show considerable changes due to γ-irradiation, indicating that the detector is not chemically stable.     

Effect of composition and forming parameter on evaporated CdSeTe films deposited at room temperature

Amorphous films of the ternary compound CdSeTe, of composition in the range 0-10 at.% Cd and with a thickness of about 200 nm, have been prepared by thermal evaporation. The optical band gap was determined and found to be in the range 0.5-1.0 eV and arose from indirect transitions. A sharp decrease in the value of optical band gap (E_opt) is observed. The electrical properties of Cd thin films have been studied extensively. In general dc measurements have indicated Ohmic conductivity at low electric fields resulting from the thermal excitation of carriers from centers in the band gap. When the temperature is low enough so that carriers cannot be excited into one of the allowed bands, the dominant conduction may take place via hopping, whereby carriers hop from occupied to unoccupied sites located within a band of localized states situated within the band gap. The electrical and optical data were consistent and realized from the binding energy represented by the cohesive energy values. The generalized (8−n) rule was used to estimate the average co-ordination number. The obtained results were treated in the frame of the chemical bond approach proposed by Bicerano and Ovshinsky. The phase separation phenomena and the morphology were also studied for the prepared films.