Effect of MeV electron irradiation on the free volume of polyimide

The free volume of the microvoids in the polyimide samples, irradiated with 6 MeV electrons, was measured by the positron annihilation technique. The free volume initially decreased the virgin value from ～13.70 to ～10.98 Å³ and then increased to ～18.11 Å³ with increasing the electron fluence, over the range of 5?×?10¹⁴ – 5?×?10¹⁵ e/cm². The evolution of gaseous species from the polyimide during electron irradiation was confirmed by the residual gas analysis technique. The polyimide samples irradiated with 6 MeV electrons in AgNO₃ solution were studied with the Rutherford back scattering technique. The diffusion of silver in these polyimide samples was observed for fluences >2?×?10¹⁵ e/cm², at which microvoids of size ≥3 Å are produced. Silver atoms did not diffuse in the polyimide samples, which were first irradiated with electrons and then immersed in AgNO₃ solution. These results indicate that during electron irradiation, the microvoids with size ≥3 Å were retained in the surface region through which silver atoms of size ～2.88 Å could diffuse into the polyimide. The average depth of diffusion of silver atoms in the polyimide was ～2.5 μm.     

Oxidation and faceting of polycrystalline tungsten ribbons

We have measured the oxidation rate of tungsten and the evaporation rate of tungsten oxide in the temperature range from 900 to 1200 K at an oxygen pressure from 5 × 10^?4 to 5 × 10^?3 Torr. The oxidation rate increases steadily with coverage in the whole range studied. The evaporation rate decreases at high pressure and is strongly dependent on the initial conditions of the experiments. These kinetic measurements support a qualitative model of oxidation. The surface is composed of oxide islands surrounded by oxide-free regions covered only by chemisorbed oxygen atoms. On the bare regions beside the chemisorbed oxygen atoms we suppose the existence of a dilute chemisorbed oxide layer which can either enter the condensed oxide phase or evaporate. The number of the growing islands is set up at the beginning of the reaction and does not increase further. This model, consistent with kinetic results during oxidation, has been proposed first to explain results obtained by Auger electron spectroscopy and thermal desorption spectroscopy under vacuum. Faceting is particularly important in the early stages of the experiment because it can hinder the nucleation of the oxide which is a necessary step for growth. In a narrow range of temperature and oxygen pressure this inhibited nucleation leads to an enhanced evaporation rate so that the growth rate is lower. Recording this growth rate allows us to follow faceting. The parameters studied are the oxygen coverage and the temperature, experimental results are in agreement with LEED and RHEED results. Reconstruction and faceting are discussed and are believed to be caused by a smoothing of the surface during the chemisorption step.     

Photocatalytic activity of 6.5 MeV electron-irradiated ZnO nanorods

The microwave-synthesized zinc-oxide (ZnO) nanonorods of average length of ～ 1500 nm and diameter ～ 100 nm were irradiated with 6.5 meV electrons. From sample to sample, the electron fluence was varied over the range 5×10¹⁴ to 2.5×10¹⁵ e-cm^?2. The pre- and post-electron-irradiated ZnO nanorods were characterized by X-ray diffraction, UV–VIS, EDAX, scanning electron microscopy, transmission electron microscopy, and BET methods. The results show that after electron irradiation, the ZnO nanorods could retain the hexagonal phase with the wurtzite structure; however, the average length of the ZnO nanorods reduced to ～ 800 nm. Moreover, the oxygen atoms from a fraction of ZnO molecules were dislodged, and the process contributed to the formation of Zn–ZnO mixed phase, with increased zinc to oxygen ratio. In the photo-degradation of Rhodamine-B, a significant enhancement in the photocatalytic activity of the electron-irradiated ZnO nanorods was observed. This could be attributed to the induced defects, reduced dimensions, and increased surface area of the ZnO nanorods, in addition to the formation of the Zn–ZnO phase. All these could collectively contribute to the effective separation of the photogenerated electrons from the holes on the ZnO nanorods, and therefore enhance the photocatalytic activity under UV exposure.     

A radiotracer study of slow electron interaction with co on polycrystalline Mo

The interaction of slow (50–300 eV) electrons with CO chemisorbed on a polycrystalline Mo ribbon was investigated. A radiotracer was employed to monitor C concentration on the surface and desorbed ions were collected. From the time variation of the ion current, total electron induced desorption cross sections of 3.7 × 10^?17 to 1.6 × 10^?16 cm² were obtained. The desorption cross section for C containing species was found to be less than 1.4 × 10^?19 cm². In addition, the sticking coefficient for CO on Mo was found to be 0.13–0.16. These results are discussed in terms of the states of chemisorbed CO and the conclusions of other investigations of this systems.     

Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films

SnO₂ thin films grown on glass substrates at 300 ^°C by reactive thermal evaporation and annealed at 600 ^°C were irradiated by 120 MeV Ag⁹⁺ ions. Though irradiation is known to induce lattice disorder and suppression of crystallinity, we observe grain growth at a certain fluence of irradiation. X-ray diffraction (XRD) revealed the crystalline nature of the films. The particle size estimated by Scherrer’s formula for the irradiated films was in the range 10–25 nm. The crystallite size increases with increase in fluence up to 1×10¹² ions?cm^?2, whereas after that the size starts decreasing. Atomic force microscope (AFM) results showed the surface modification of nanostructures for films irradiated with fluences of 1×10¹¹ ions?cm^?2 to 1×10¹³ ions?cm^?2. The UV–visible spectrum showed the band gap of the irradiated films in the range of 3.56 eV–3.95 eV. The resistivity decreases with fluence up to 5×10¹² ions?cm^?2 and starts increasing after that. Rutherford Backscattering (RBS) reveals the composition of the films and sputtering of ions due to irradiation at higher fluence.     

Effect of carbon on accumulation of deuterium in beryllium irradiated with stationary plasma

Beryllium targets placed in the PLAST beam-plasma discharge facility were irradiated with a flux of stationary deuterium (D) plasma with a deuterium ion energy of 200 eV and plasma flux density of 3 × 10²⁰ m^?2 s^?1 at temperatures of 370 and 670 K. The irradiation doses varied from 5 × 10²¹ to 10²⁴ m^?2. To heat the target and to ionize impurities near its surface the target was irradiated with an electron beam. The deuterium concentration at the target center exceeds its concentration at the periphery by a factor of more than two under all irradiation conditions. The target center was enriched with carbon up to 16–24 at %, as compared to 4–6 at % at the target periphery. The [D]: [Be] atomic concentration ratios at the target center were equal to 0.054 and 0.036 against 0.024 and 0.016 at the periphery at temperatures of 370 and 670 K, respectively. It has been found that these ratios depend on the concentration of carbon atoms which trapped deuterium atoms.     

Surface and Bulk Structure Characterization of Proton (3 MeV) Irradiated Polycarbonate

Polycarbonate (Makrofol‐N) thin films were irradiated with protons (3 MeV) under vacuum at room temperature with the fluence ranging from 1×10¹⁴ to 1×10¹⁵ protons cm^?2. The change in surface morphology, optical properties, degradation of the functional groups, and crystallinity of the proton‐irradiated polymers were investigated with atomic force microscopy (AFM), UV‐VIS, and Fourier‐transform infrared (FTIR) spectroscopy, and X‐ray diffraction (XRD) techniques, respectively. AFM shows that the root mean square (RMS) roughness of the irradiated polycarbonate surface increases with the increment of ion fluence. The UV‐VIS analysis revealed that in Makrofol‐N the optical band gap decreased by 30% at highest fluence of 1×10¹⁵ protons cm^?2. The band gap can be correlated to the number of carbon atoms, M, in a cluster with a modified Robertson's equation. The cluster size in the proton‐irradiated Makrofol‐N increased from 112 to 129 atoms with the increase of fluence from 1×10¹⁴ to 1×10¹⁵ protons cm^?2. FTIR spectra of proton (3 MeV) irradiated Makrofol‐N showed a strong decrease of almost all absorption bands at about 1× 10¹⁴ protons cm^?2. However, beyond a higher critical dose an increase in intensity of almost all characteristic bands was noticed. The appearance of a new peak at 3,500 cm^?1 (‐OH groups) was observed at the higher fluences in the FTIR spectra of proton‐irradiated polycarbonate. XRD measurements showed an increase of full width at half maximum (FWHM) and the average intermolecular spacing of the main peak, which may be due to the increase of chain scission and the introduction of ‐OH groups in the proton irradiated polycarbonate.     

Interaction of cesium and oxygen on W(110): I. Cesium adsorption on oxygenated and oxidized W(110)

Cesium adsorption on oxygenated and oxidized W(110) is studied by Auger electron spectroscopy, LEED, thermal desorption and work function measurements. For oxygen coverages up to 1.5 × 10¹⁵ cm^?2 (oxygenated surface), preadsorbed oxygen lowers the cesiated work function minimum, the lowest (～1 eV) being obtained on a two-dimensional oxide structure with 1.4 × 10¹⁵ oxygen atoms per cm². Thermal desorption spectra of neutral cesium show that the oxygen adlayer increases the cesium desorption energy in the limit of small cesium coverages, by the same amount as it increases the substrate work function. Cesium adsorption destroys the p(2 × 1) and p(2 × 2) oxygen structures, but the 2D-oxide structure is left nearly unchanged. Beyond 1.5 × 10¹⁵ cm^?2 (oxidized surface), the work function minimum rises very rapidly with the oxygen coverage, as tungsten oxides begin to form. On bulk tungsten oxide layers, cesium appears to diffuse into the oxide, possibly forming a cesium tungsten bronze, characterized by a new desorption state. The thermal stability of the 2D-oxide structure on W(110) and the facetting of less dense tungsten planes suggest a way to achieve stable low work functions of interest in thermionic energy conversion applications.     

Interaction of hydrogen and deuterium with intrinsic atomic defects in high-purity electron-irradiated nickel

Abstract

High-purity nickel was irradiated with 2 MeV electrons at temperatures below 80 K to a dose of 1 × 10²³ e^?/m² in the as-prepared state and after charging with H or D. By means of magnetic after-effect measurements relaxations of anisotropic radiation-induced defects and of defect-hydrogen complexes were investigated in the temperature range between 4.2 and 500 K. The isochronal annealing behaviour of these relaxations and the isochronal recovery of the residual resistivity was measured simultaneously on the same specimens. At temperatures below the hydrogen mobility (< 160 K) in charged irradiated specimens relaxation maxima are observed at 45, 100, 115 and 140 K which show no isotope shift for H and D charging. The maxima below 160 K are explained by defect-hydrogen complexes, where radiation-induced defects reorient around immobile hydrogen atoms. Above 160 K, where hydrogen atoms get mobile, in charged irradiated specimens a broad relaxation maximum appears at 170 K which shows an inverse isotope shift for H and D charging. This 170 K maximum anneals in Stage III. A hydrogen diffusion maximum observed in charged specimens at 215 K prior to irradiation is missing after electron irradiation. The 170 K relaxation is explained by defect-hydrogen complexes, where hydrogen atoms reorient around immobile radiation-induced defects while the long-range hydrogen diffusion is suppressed by these defects. In such relaxation measurements hydrogen and deuterium atoms are used as a “probe” to investigate radiation-induced defects.     

The adsorption of oxygen on Cu(210)

The system Cu(210)-O₂ has been examined using LEED and AES, combined with optical simulation of diffraction patterns to investigate the detailed structure of the adsorbed layer. Exposure at 300 K and 5 × 10^?9 Torr resulted in LEED patterns showing pronounced streaks. The corresponding structures are believed to require an adsorption mechanism in which O₂ dissociation can occur only at a limited number of surface sites and in which O atoms after dissociation diffuse over quite large distances (?10 nm) before becoming chemisorbed. Heating these structures to 500–600 K produced a sharp (2 × 1) pattern; this step is thought to involve equilibration of the adsorbed layer. Further combinations of exposure (?1 × 10^?6Torr) and heating (up to 500 K) resulted in a series of (2 × 1) and (3 × 1) patterns, while heating to 800 K at any stage of the oxygen interaction regenerated the clean surface.     

Effect of swift heavy ion irradiation on dilute Fe-doped Sb0.95Se0.05 magnetic semiconductor

A thin film of dilute Fe (0.008)-doped Sb_0.95Se_0.05 alloy was grown on silicon substrate using the thermal evaporation technique. This film was irradiated with swift heavy ions (SHIs) Ag⁺¹⁵ having 200?MeV energy at ion fluences of 1?×?10¹² and 5?×?10¹² ions per cm², respectively. The thickness of the thin film was ～500?nm. We study the effect of irradiation on structural, electrical, surface morphology and magnetic properties of this film using grazing angle XRD (GAXRD), DC resistivity, atomic force microscopy (AFM) and magnetic force microscopy (MFM), respectively. GAXRD suggests that no significant change is observed in this system due to SHI irradiation. The average crystallite size increases with fluence, whereas the AFM image shows the rms roughness decreases due to irradiation with respect to the un-irradiated thin film. The MFM image shows that the magnetic interaction in irradiated film decreases due to the irradiation effect. Although the un-irradiated sample shows metal to semiconducting transition, but after irradiation with fluence of 5?×?10¹² ions per cm², the sharpness of the metal to semiconducting phase transition is observed to increase dramatically at ～300?K. This characteristic of the thin film makes it a promising candidate for an electrical switching device after irradiation.     

Studies of clean and oxidized tellurium surfaces

Clean and oxidized surfaces of tellurium films have been studied using electron-excited Auger electron spectroscopy, X-ray photoelectron spectroscopy, energy loss spectroscopy, and electron-stimulated desorption. The results for clean tellurium are in general agreement with previous studies, but the oxidation studies have provided new information. Reaction between oxygen gas and tellurium was found to be an activated process requiring tellurium temperatures in excess of 60°C to produce detectable oxide for 30 min exposures to ~800 Torr of oxygen. Increasing the temperature to 200°C produced a 10.6 A layer of TeO₂. This layer was rapidly removed by electron irradiation with a cross-section of ~3 × 10^?18 cm² for electron-stimulated desorption of oxygen by 2 keV electrons; however, there was evidence for reduced cross sections for thinner TeO₂ layers.     

Influence of the defect state of samples on the luminescence spectra of CdS single crystals irradiated by electrons

The photoluminescence spectra of CdS single crystals irradiated by electrons (E = 1.2 MeV, Φ = 2×10¹⁷ cm^?2) are investigated in the visible and near-infrared regions of electromagnetic radiation. Some samples of the CdS single crystals are preliminarily irradiated by neutrons (E = 2 MeV, Φ = 2 × 10¹⁸ cm^?2) with the aim of increasing the concentration of initial structural defects. From analyzing the peak intensities of photoluminescence in the irradiated single crystals at the wavelengths λ_m = 0.720, 1.030, and 0.605 μm, it is concluded that the CdS samples with a low concentration of structural defects in the initial state possess the highest resistance to electron radiation. It is assumed that the observed transformation of the photoluminescence spectra of the imperfect CdS single crystals subjected to electron irradiation is determined by either the mechanisms of subthreshold defect formation or the transformation of the defect complexes in elastic and electric fields near the large structural damages of the crystal lattice.     

Positron annihilation in electron-irradiated n-type gap crystals

Abstract

The defects in n-GaP crystals irradiated by 2.3 MeV electrons up to 1 × 10¹⁹ cm^?2 at RT were studied by means of positron annihilation (angular correlation) and electrical property measurements. It was found that positrons are trapped in some radiation-induced vacancy-type defects (acceptors) but that the effect saturates at high electron fluences (D1 × 10¹⁸ cm^?2). The trapping rate in irradiated samples increases with temperature in the range 77–300 K. Post-irradiation isochronal annealing reveals the positron traps clustering at about 200–280°C. All positron sensitive radiation-induced defects disappear upon annealing up to 500°C.     

50 MeV Li3+ ion irradiation effect on structural, electrical, and dielectric properties of PVA-based nanocomposite polymer electrolytes

Nanocomposite polymer electrolyte thin films of polyvinyl alcohol (PVA)-orthophosphoric acid (H₃PO₄)-Al₂O₃ have been prepared by solution cast technique. Films are irradiated with 50 MeV Li³⁺ ions having four different fluences viz. 5?×?10¹⁰, 1?×?10¹¹, 5?×?10¹¹, and 1?×?10¹² ions/cm². The effect of irradiation on polymeric samples has been studied and characterized. X-ray diffraction spectra reveal that percent degree of crystallinity of samples decrease with ion fluences. Glass transition and melting temperatures have been also decreased as observed in differential scanning calorimetry. A possible complexation/interaction has been shown by Fourier transform infrared spectroscopy. Temperature-dependent ionic conductivity shows an Arrhenius behavior before and after glass transition temperature. It is observed that ionic conductivity increases with ion fluences and after a critical fluence, it starts to decrease. Maximum ionic conductivity of ～2.3?×?10^?5 S/cm owing to minimum activation energy of ～0.012 eV has been observed for irradiated electrolyte sample at fluence of 5?×?10¹¹ ions/cm². The dielectric constant and dielectric loss also increase with ion fluences while they decrease with frequency. Transference number of ions shows that the samples are of purely ionic in nature before and after ion irradiation.     

Mixing of Au in Si induced by secondary and high-order recoil implantation

The mixing of Au in Si induced by secondary and high-order recoil implantation was investigated using 350 keV Ar⁺ and 350 keV Kr⁺ ions to fluences from 1?×?10¹⁶ to 3?×?10¹⁶ ions/cm² at room temperature. The thickness of the Au layer evaporated on Si substrate was ～2400 Å.The ranges of the Ar and Kr ions were chosen to be lower than the thickness of the Au layer in order to avoid the ballistic mixing produced by the primary knock-on atoms. Rutherford backscattering spectrometry (RBS) experiments were carried out to study the effects induced by Ar and Kr irradiation at the interface of Au–Si system. We observed that in the case of the irradiation with Ar⁺ ions, a broadening of the Au–Si interface occurred only at the fluence of 3?×?10¹⁶ Ar⁺/cm² and it is attributed to the surface roughening induced by ion bombardment. In contrast, the RBS analysis of a sample irradiated with 2?×?10¹⁶ Kr⁺/cm² clearly showed, in addition to the broadening effect, the formation of a mixed zone of Au and Si atoms at the interface. The mixing of Au in Si atoms can be explained by the secondary and high-order recoil implantation followed by subsequent collision cascades.     

Effects of damage rate on Cu precipitation in Fe–Cu model alloys under neutron irradiation

The formation of Cu precipitates and point defect clusters was investigated in two Fe–Cu binary model alloys, Fe–0.3Cu and Fe–0.6Cu, irradiated at 573?K at three different damage rates, namely 3.8?×?10^?10, 1.5?×?10^?8 and 5?×?10^?8?dpa (displacements per atom)/s, up to about 1.6?×?10^?2?dpa. Results of positron annihilation experiments indicated that Cu precipitates were formed in these irradiations with different damage rates. The growth of Cu precipitates does not increase monotonously with increasing irradiation dose, but it rather depends on the nucleation and growth of microvoids. It is also clear that the nucleation and growth of microvoids are influenced by the irradiation dose rate.     

Changes in K-208 glass transmittance spectra under ionizing radiation and molecular fluxes

The effect of 40-keV electron and proton radiation with a flux density of 5 × 10 cm^?2 s^?1 on the deposition of products of thermostimulated gas release from a polymer composite on a substrate made from protective K-208 glass used for the protection of spacecraft solar panels is experimentally investigated. Analysis of the obtained results shows that, unlike proton radiation, electron radiation results in an increase in the optical density of the glass and stimulates the deposition of gas-release products. It is established that the majority of effects generated as a result of exposure of the substrate to electron radiation are neutralized by protons upon combined irradiation with electrons and protons.     

Studies of some physical properties of PrFe0.7Ni0.3O3 thin films after 200 MeV Ag15+ irradiation

PrFe_0.7Ni_0.3O₃ thin films (thickness ~ 200 nm) were prepared by pulsed laser ablation technique on LaAlO₃ substrate. These films were irradiated with 200?MeV Ag¹⁵⁺ ions at various fluencies, ranging from 1 × 10¹¹ to 1 × 10¹² ions/cm². These irradiated thin films were characterized by using X-ray diffraction, dc conductivity, dc magnetization and atomic force microscopy. These films exhibit orthorhombic structure and retain it even after irradiations. The crystallite size (110–137?nm), micro strain (1.48 × 10^?2–1.75 × 10^?2 line^?2?m^?4) and dislocation density (79.7 × 10¹⁴–53.2 × 10¹⁴ line/m²) vary with ion fluencies. An enhancement in resistivity at certain fluence and then a decrease in its value (0.22175–0.21813?Ω?cm) are seen. A drastic change in observed magnetism after ion irradiation is seen. With ion irradiation, an increase in surface roughness, due to the formation of hillocks and other factors, is observed. Destruction of magnetic domains after irradiation can also be visualized with magnetic force microscopy and is in close agreement with magnetization data. The impact on various physical properties in these thin films after irradiation indicates a distortion in the lattice structure and consequently on single-particle band width caused by stress-induced defects.     

Microstructural changes induced in borosilicate glasses by 1 MeV electrons

Radiation damage to borosilicate glass has been studied using a high voltage electron microscope to simultaneously generate and image structural changes At low doses and dose rates (φ ? 5 × 10²⁴ electrons m^-2, F ? 5 × 10²² el m^-2 s^-1), ionic depletion generates a new crystalline phase rich in S₁O₂ For incubation doses exceeding 5 × 10²⁴ electrons m^-2, gas bubbles are observed High damage rates are necessary for bubble nucleation though not for their subsequent growth The critical nucleation flux increases rapidly with irradiation temperature, whereas the gas precipitation efficiency remains constant above 300 K.