Structure analysis of an oxidized nickel (110) surface using low energy ion scattering

Low energy (6 keV) argon and neon ion scattering in the low angle mode (θ = 30°) has been used to investigate changes in the surface structure of a Ni(110) surface caused by the adsorption of oxygen at low exposures (10^?6 Torr s). The experimental energy spectra indicate that due to adsorption of oxygen, the interatomic distance in the 〈1̄10〉 direction increases while in the 〈001̄〉 direction this distance seems to decrease. This represents strong evidence that a reconstruction process is taking place during the early stages of oxidation of the Ni(110) face, in which the interatomic distances in the 〈1̄10〉 direction doubles. The oxygen atoms were found to lie in or close to the nickel 〈001̄〉 rows. These results are not in agreement with recently published dynamical LEED calculations.     

Adsorption of gold on low index planes of rhenium

On atomically rough areas of a thermally cleaned rhenium field emitter, adsorbed gold behaves like it does on tungsten. The average work function $\text{}\text{?}$gf increases at low average gold coverage $\text{}\text{?}$gq due to formation of gold-rhenium dipoles, and at high coverage a structural transformation in the gold layer leads to a $\text{}\text{?}$gq-independent work function. Broadly similar behaviour is found for gold on the low-index planes of tungsten, but on low-index rhenium planes gold behaves rather differently. When thermally cleaned at > 2200 K and annealed below 800 K, the work function, φ(clean), of (101&#x0304;1&#x0304;) takes one of two values 5.25 ± 0.04 eV, and 5.36 ± 0.04 eV, which are tentatively attributed to the two possible structures of this plane. Similar behaviour is expected and observed for (101&#x0304;0),but the values taken by φ(clean) are not well defined. Both forms of (101&#x0304;1&#x0304;) are thought to undergo reconstruction above 800 K forming a single structure with φ(clean) = 5.55 ± 0.03 eV. (112&#x0304;0) and (112&#x0304;2&#x0304;) each have only one possible structure, and in keeping with this, φ(clean) has a single well-defined value for each plane. The flatness of (101&#x0304;1&#x0304;) and (101&#x0304;0) leads to field reduction at their centres which produces an increase in their measured work functions by up to 10%. The initial increase in φ produced by gold condensed at 78 K and spread at low equilibration temperatures T_s on (112&#x0304;2&#x0304;), (101&#x0304;1&#x0304;) and (112&#x0304;0) is attributed to gold-rhenium dipoles, which, on the latter two planes approximate to the Topping model, giving dipoles characterised by μ₀(1011) = 0.1 × 10^?30 C-m with α = 10 ų and μ₀(112&#x0304;0) = 0.32 × 10^?30 C-m with α = 22 ų, where μ₀ is the zero-coverage dipole moment and α its polarizability. Failure of the Topping model on (112&#x0304;2&#x0304;) is attributed to its atomically rough structure. No dipole effect is seen on (101&#x0304;0). Energy spectroscopy of electrons field emitted at (202&#x0304;1&#x0304;) and (101&#x0304;1&#x0304;) demonstrates the non-free character of electrons in rhenium, while the small effect of adsorbed gold strengthens the belief that gold is bound through a greatly broadened 6s level centred 5.6 eV below the Fermi level and the dipolar nature of the bond supports this model. At higher values of T_s and $\text{}\text{?}$gq gold appears to form states which are well-characterised by a coverage-independent work function. (101&#x0304;0), (101&#x0304;1&#x0304;) and (112&#x0304;0) each form two such states, one in the range 2 < $\text{}\text{?}$gq < 4 (state 1), and the second at $\text{}\text{?}$gq > 4 (state 2). The atomic radii of gold and rhenium are thought to be sufficiently similar to allow the possibility that state 1 is a replication of the Re plane structure by gold. The high work function and thermal stability of state 2, taken together with the observed temperature dependence of the transformation of state 1 to state 2, encourages the belief that state 2 results from atomic rearrangement of state 1 into a close-packed Au(111) structure. State 2 also forms on (112&#x0304;2&#x0304;) and the absence of state 1 on this plane suggests some surface alloying at coverages below 4 $\text{}\text{?}$gq.     

Surface layer relaxation on Mo(111) measured by low energy alkali ion scattering

The surface of clean Mo(111) has been studied using Li⁺ ion scattering at 1000 eV. The dependence of single scattering intensity was measured as a function of incident polar angle in the [12&#x0304;1] and the [21&#x0304;1&#x0304;] azimuths for various total scattering angles. Very pronounced intensity cut-offs are observed and are readily assignable to shadowing and blocking effects in scattering from first, second or third layer atoms. After taking certain precautions to avoid interference from deeper layers, the measured positions of the features yield the first-second layer spacing which is found to be strongly contracted by (18 ± 2)% compared to the bulk spacing. The method also indicates that the second-third layer spacing is possibly expanded (4 ± 4)%, but this result is uncertain due to possible contributions from deeper layers which make this value an upper limit of the layer spacing. The physical implications of these results and the uncertainties in the technique are discussed.     

Iodine etching of the GaAs(1&#x0304;1&#x0304;1&#x0304;)As surface studied by LEED,AES, and mass spectroscopy

The iodine interaction with the GaAs(1&#x0304;1&#x0304;1&#x0304;)As surface prepared by molecular beam epitaxy has been studied by LEED, LEED intensity measurements, Auger electron spectroscopy (AES) and computer controlled mass spectroscopic study of the whole desorption spectrum. It is shown that an iodine beam hitting the GaAs(1&#x0304;1&#x0304;1&#x0304;)As face at 300 K under UHV conditions etches the surface continuously. After this etching there remains an adsorbate of GaI_x where x is a number between 0 and 3. By thermal desorption of this GaI_x adsorbate an As stabilized GaAs(1&#x0304;1&#x0304;1&#x0304;)As surface showing a (2 × 2) structure can be prepared, which up to the present could be done only by molecular beam epitaxy.     

Orientation dependence of oxygen adsorption on a cylindrical GaAs sample: I. Auger measurements

The orientation dependence of oxygen adsorption has been investigated by AES on the surface of a cylindrically shaped GaAs single crystal with [111&#x0304;0] being its axis. It thus exposes the main low index orientations (001), (111)Ga, (110), and (111&#x0304;)As, as well as all their vicinal surfaces and intermediate orientations on its surface. It is shown that it is possible to prepare all these orientations simultaneously and with reasonable quality by ion bombardment and annealing (IBA). The orientation dependence of the amount of adsorbed oxygen in the range (001)(111)Ga(110)(111&#x0304;)As can be understood in terms of different sticking coefficients on the different types of terrace site and of enhanced adsorption on edge-adjacent sites. These edge-adjacent sites show saturation at about 4 × 10⁵ L. Starting from (110) towards (111)Ga, at first, steps one atomic layer high are found, changing to a height of two layers when approaching (331). This behaviour can be understood in terms of the known relaxation on (110). A deep minimum in the amount of adsorbed oxygen between (111&#x0304;)As and (001&#x0304;) is interpreted to be due to an As stabilized low sticking coefficient phase between (112&#x0304;) and (113&#x0304;). Early saturation (at～10⁵ L) on (001) and (111&#x0304;)As is consistent with the fact that these surfaces usually do not reach their room temperature equilibrium phase upon preparation by IBA. Sudden and accidental oxygen induced composition changes towards As-richer substrate compositions further confirm this.     

Site-specific interaction of H2O with ZnO single-crystal surfaces studied by thermal desorption and UV photoelectron spectroscopy

The adsorption and condensation of H₂O(D₂O) on ZnO(101&#x0304;0), (0001)Zn and (0001&#x0304;)O surfaces was investigated by means of thermal desorption (TDS) and UV photoelectron spectroscopy (UPS). The clean ZnO single-crystal surfaces were prepared by Ar-ion sputtering and annealing and characterised by Auger electron spectroscopy, LEED, UPS and work-function measurements. On all three surfaces six different adsorption states were found. In the monolayer regime there is a stronger bonding to Zn sites (desorption temperature 340 K) than to O sites (190 K), The bonding to the Zn sites seems to be accompanied by some clustering. Before the chemisorption layer is completed a first ice state is found whose desorption temperature shifts from 162 to 168 K with increasing exposures. At higher exposures the multilayer ice state is found at 152 K. On the (0001&#x0304;)O face defect-induced features were identified. The water lone-pair orbital 1b₁, whose energy falls between the O p and the Zn 3d emission of the substrate and which is known to show bonding shifts, was analysed using angle-resolved UPS. In the monolayer, the main chemisorption states are found at E_B^V(1b₁) = ?9.6 eV for the (0001)Zn face and at ? 10.6 eV for the (0001&#x0304;)O face and are compared with the multilayer ice emission at 1&#x0304;1.1 eV. The difference in binding energies shows the same trend as the TDS data. For the (101&#x0304;0) face the 1b₁ emission is very broad, indicating some overlap between different states.     

Chemical properties of anion vacancies on zinc oxide

A ZnO(404&#x0304;1) surface, which is a stepped [4(101&#x0304;0) × (0001)] surface containing a high density of anion vacancies was prepared. When compared with the nonpolar (101&#x0304;0) surface, the (404&#x0304;1) surface adsorbed O₂ and methanol more strongly, but CO₂ more weakly. The decomposition products of methanol were different on these two surfaces.     

Leed studies of vicinal surfaces of silicon

Clean silicon surfaces inclined at small angles to (111), (100) and (110) planes were investigated by LEED. Surfaces oriented at low angles to the (111) plane contain steps with edges towards [2&#x0304;11] or [21&#x0304;1&#x0304;]. Steps with edges towards [2&#x0304;11] have a height of two interplanar distances d₁₁₁ at low temperatures. At 800°C the reversible reconstruction of this step array into the steps of monolayer height takes place. Steps with edges towards [21&#x0304;1&#x0304;] can be seen at low temperatures only. They are of monolayer height and disappear at annealing in vacuum. Surfaces oriented at low angles to the (100) plane contain steps with (100) terraces and have a height of about two interplanar distances d₁₀₀. Surfaces at low angles to (110) planes are facetted and contain facets of the (47 35 7) type. The information about surface self-diffusion of silicon may be obtained using the kinetic data of structural reconstructions on surfaces close to (111) at different temperatures.     

Electrical properties of p-type GaP schottky barrier under stress

The effect of stress on a Schottky barrier height at a metal-semiconductor interface is investigated for metal-p-type GaP contacts. The diodes are fabricated by evaporating metals (Ag, Au) on polar (111)Ga and (1&#x0304;1&#x0304;1&#x0304;)P surfaces. Stress is applied to the diodes by bending the crystal wafers attached to the cantilever. The variation of the barrier height with stress is determined from the measurements of the current-voltage characteristics under stress. The barrier height decreases under compressive stress parallel to the interface and increases under tensile stress. The change in barrier height on the (111)Ga surface is greater than that on the (1&#x0304;1&#x0304;1&#x0304;)P surface. These experimental results are discussed from the point of both the piezoelectricity and the change in band gap caused by stress.     

Neutralization of low energy helium ions scattered from Au adatoms on Si(111)-√3 × √3-Au

The neutralization of 5 keV He⁺ ions scattered from Au adatoms on the Si(111)-√3 × √3-Au surface was studied by impact-collision ion-scattering spectroscopy (ICISS). The He⁺ ICISS data contained false shadowing features that were actually the result of local neutralization effects. The radially dependent ion-atom neutralization theory of Woodruff, when used in our simulations of the ion scattering results, was reasonably successful in describing the neutralization of the He⁺ ions by the Au atoms. Good agreement for both the [112&#x0304;] and [1&#x0304;10] azimuths was obtained for a neutralization rate R = A exp(− ar), where A and a are 15.5 fs⁻¹ and 1.94 Å⁻¹ , respectively. An Auger neutralization model assuming a planar ion-solid interaction surface was also tested, yielding much poorer agreement.     

pp̄ annihilation in an S-wave quark rearrangement model

The S-wave annihilation contribution to the pp? inelastic cross section at low energies is calculated in a quark-antiquark rearrangement model which includes the effect of NΔ&#x0304; + N?Δ and ΔΔ&#x0304; intermediate states. This mechanism, which leads automatically to a separable interaction, is able to account for about 15% of the observed cross section. The extension of the model to P-waves is also outlined.     

LEED,AES and work function measurements on clean and cesium covered polar faces of GaP

After argon bombardment and annealing both the (111) and (1&#x0304;1&#x0304;1&#x0304;) faces of GaP show a (1 × 1) LEED pattern. The stabilization of the polar termination is probably obtained by charging of surface states. Measurements of the work function, the Auger spectrum and the LEED pattern during cesium deposition at room temperature suggest disordered cesium adsorption limited to a monolayer.     

Surface phonons in GaAs(110)

Surface phonon dispersion curves have been measured along the <001>, <11&#x0304;2>, and <11&#x0304;0> azimuths of GaAs(110). Features of note include a very low frequency (5.5 meV at zone boundary) surface acoustic mode in the first two directions; this may arise through the known (1 × 1) reconstruction of this surface. A higher frequency surface mode (7.3–8.8 meV, depending on azimuth) is seen in all directions. The helium scattering intensities are greatly influenced by bound state resonances. A careful survey of the selective adsorption signatures in extremely high resolution scans of polar angle, azimuthal angle, and incident beam wavevector allows the bound state energies to be determined with some confidence. Initial results indicate energies of roughly 1, 2, and 4 meV.     

Ex situ STM imaging with atomic resolution of Ni(111) electrodes passivated in sulfuric acid

Scanning tunneling microscopy has been used to study in air Ni(111) electrodes passivated in 0.05M H₂SO₄ at + 650 mV/SHE. Before passivation, the Ni(111) single crystal surface has steps along the 〈1&#x0304;10〉 directions with terraces having a width of a few hundred nanometers. After passivation, a mosaic structure is formed with crystallites of 2 to 3 nm in size and strip-like features extended mainly along the [12&#x0304;1] direction whose width ranges from 2 to 3 nm and which appear to be locally tilted from 5 to 13°. Atomic resolution imaging has been achieved on both of these features. It reveals a corrugated lattice whose parameters are 0.30 ± 0.02 nm and 117 ± 3° in agreement with those of NiO(111). The crystallites have smooth step edges along [1&#x0304;01] and [011&#x0304;]. The STM imaging of the passive film as well as its mosaic structure are discussed.     

The effect of hydrogen chemisorption on GaAs(100) and GaAs(1&#x0304;1&#x0304;1&#x0304;)

The interaction of hydrogen with the polar (100) and (1&#x0304;1&#x0304;1&#x0304;) surfaces of GaAs has been studied with LEED, angle-resolved photoemission and core level spectroscopy. It was found that the properties of the hydrogen-covered surface were independent of the composition of the initial surface. The core levels also showed an increase in the surface As concentration for initially Ga-rich surfaces. Angle-resolved photoemission results for GaAs(100) and GaAs(100):H are presented and the dispersion of a hydrogen-induced state is shown.     

A new type of reconstruction on the InSb(1&#x0304;1&#x0304;1&#x0304;) surface determined by grazing incidence X-ray diffraction

The (3×3) reconstruction of the InSb(1&#x0304;1&#x0304;1&#x0304;) surface has been investigated by grazing incidence X-ray diffraction and scanning tunneling microscopy. The structure is characterized by 6-atom rings on top of a slightly buckled InSb top double layer. Two types of rings have been found, an elliptic ring consisting of 4 In and 2 Sb atoms and a trigonal ring with 3 In and 3 Sb atoms. The bond angles and lengths are consistent with the concept of rehybridization and depolarization which explains the reconstructions of the (111) and (110) surfaces.     

Angular resolved ups of surface states on GaAs(1&#x0304;1&#x0304;1&#x0304;) prepared by molecular beam epitaxy

The As-rich (2 × 2), a newly found (√3 × √3) and the (√19 × √19) surfaces of GaAs(1&#x0304;1&#x0304;1&#x0304;) are studied by angular resolved UPS (ARUPS). The (2 × 2) surface is prepared by molecular beam epitaxy and the others by mild annealing. For the (2 × 2) surface emission from surface states is observed, which shows dispersion periodic within the (2 × 2) surface Brillouin zone. Using s-polarized light and the known symmetry selection rules the uppermost surface bands between 1 and 2 eV below the valence band maximum are assigned to the As dangling bond orbital. The bands near 4 and 7 eV assigned to the backbonds. From the strong decrease of emission intensity of the As-derived surface states between the (2 × 2) and the annealed surfaces it is concluded that the character of the As dangling bond orbital must have been changed from sp³-hybridic to s-like. This gives further evidence for our recently proposed model for the (√19 × √19) surface, which is particularly applicable for the (√3 × √3) surface.     

Fabrication of quantum wires and dots on GaAs (111)A patterned substrates by molecular beam epitaxy

Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridge-type triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [111]A and [01&#x0304;1] directions. Fabrication of quantum dots on ridge-type triangles and hexagons with smaller sizes and quantum wires on stripes running in the [1&#x0304;1&#x0304;2]A direction was proposed.     

Surface structures formed upon oxidation of the (311) face of copper

The oxidation of the copper (311) surface at temperatures from 25 to 900° C, and at oxygen pressures from 1 atm to 10⁻⁴ torr has been investigated by reflection high energy electron diffraction (RHEED). At room temperature, a poorly organized three-demensional epitaxial layer of Cu²O initially covers the surface, but it disappears when heated in vacuum to 200 °C. Between 300 and 600 °C, two symmetry-equivalent versions of a (4 × 1) two-dimensional surface structure form. Above 500 °C, this structure transforms into another having a hexagonal primitive cell with one axis coinciding with the Cu [011&#x0304;] direction and an axial length of 5.212 Å. This is the same cell which has been observed previously with oxidation of copper (100), (111), and (110) faces above 600 °C. Upon oxidation above 600 °C, the surface decomposes into (111) and (100) facets having the copper [010&#x0304;] direction in common.     

Composition,structure, surface states,and O2 sticking coefficient for differently prepared GaAs(1&#x0304;1&#x0304;1&#x0304;)As surfaces

The polar GaAs(1&#x0304;1&#x0304;1&#x0304;)As surface can be prepared in three stable and ordered states: two by molecular beam epitaxy (MBE), namely the As-stabilized and the Ga-stabilized states and one simply by ion bombardment and annealing at 770 K. The respective LEED structures are $\text{(2 × 2), (}\text{19}\text{×}\text{19}\text{)}\text{R}\text{23.4°}$, and (1 × 1) with a diffuse faint (3 × 3) superstructure. Auger measurements and the comparison with the stoichiometric cleaved (110) surface show that there are different As concentrations in the first atomic layer associated with each of these three surfaces. Whereas about 10 to 15% of the first As layer appears to be missing on the (2 × 2) surface, about 50% is missing on the $\text{19}$ surface. On the (1 × 1) surface the first As layer is removed completely. The intensity of emission from the surface sensitive states between 1 and 4 eV below the valence band edge, as seen by angular resolved UPS, roughly corresponds to the amount of As at the surface thus confirming their interpretation as As-derived surface states. The inital sticking coefficent for oxygen depends strongly on the surface structure: ～10^?8 for the (2 × 2), ～10^?7 for the $\text{19}$, and ～10^?4 for the (1 × 1) surface. The sticking coefficient does not depend on the surface concentration of As but rather on the degree of saturation of dangling bonds on Ga atoms.