钛碳化物改性碳纳米管的场发射性能

通过在碳纳米管(CNTs)表面沉积钛薄膜并经过高温真空退火处理,在CNTs表面形成了低功函数的钛碳化物.研究了钛碳化物改性CNTs的场发射性能,并利用X射线光电子能谱(XPS)对改性碳管进行了结构表征.实验结果表明,高温真空退火可使沉积在CNTs表面的钛原子与碳原子发生化学反应生成钛碳化物;经钛碳化物改性处理的CNTs的场发射性能明显改善,开启电场由改性前的121降低到104V/μm,当电场强度为234V/μm时,场发射电流密度由改性前的23增大到改性后的13.5mA/cm²,同时,CNTs的表面抗离子轰击能力增强,发射稳定性改善.对钛碳化物改性增强CNTs薄膜场发射性能的机理进行了分析. 关键词： 碳纳米管 钛碳化物 场发射 结构表征     

Work function of the adsorption system of potassium on tungsten

The work functions φ_hklof tungsten single crystal planes as functions of the surface densities N_hkl of the adsorbed potassium have been measured by means of the field emission method. Sealed-off field emission tubes with a Faraday collector and rotatable emitter were used. Another, special tube was made in order to determine the surface density of potassium. The unequilibrated adlayers on {110}, {112}, {100} and {111} tungsten single crystal planes have been investigated. For all the planes investigated the φ_hkl(N_hkl) dependence exhibited a distinct minimum. An attempt has been made to compare the experimental results with the theoretical models suggested recently.     

The topography of nickel crystals during the reaction towards Ni(CO)4; A field ion microscope study

The structural aspect of the formation of Ni(CO)₄ by the reaction of CO with solid nickel has been studied. The nickel initial state was a nearly hemispherical single crystal as prepared by field evaporation of a nickel field emitter tip. Field-free reaction of CO with the clean nickel surface took place at pressures up to 2 mbar, reaction times up to 45 h, and at a temperature of 373 K, which as a result from work by others was found optimum for highest rates of Ni(CO)₄ formation. Neon field ion imaging at 80 K after reaction with CO showed the crystal always in an intermediate state, which had the features: (1) Areas of {;111} were increased; (2) at half angles between a central (111) and peripherical {111} planes there were {110} planes flanked by {210}, and {100} flanked by {511}, respectively; (3) with the exception of the planes mentioned in feature (2), the remaining surface area was more than mono-atomically stepped. From these results and in accordance with the theory of crystal growth (Kossel, Stranski) and the theory of crystal dissolution (Lacmann, Franke, Heimann) a pure octahedron is expected to be the final state of the crystal. This implies that nickel atoms removed by the reaction are most frequently taken from 〈110〉 atom chains of the {111} planes.     

An Ab Initio Study of the Structural and Electronic Properties of the Low-Defect TiC(110) Surface Simulating Oxygen Adsorption after Exposure to Laser Plasma

An ab initio simulation of the adsorption of atomic oxygen on the low-defect titanium carbide (110) surface reconstructed by laser radiation was performed. The relaxed atomic structures of the (110) surface of the O/Ti _x C _y system with Ti and C vacancies observed during the thermal treatment were studied in terms of the density functional theory. DFT calculations of their structural, thermodynamic, and electronic properties were performed. The bond lengths and adsorption energies were determined for various reconstructions of the atomic structure of the O/Ti _x C _y (110) surface. The effects of the oxygen adatom on the band and electronic spectra of the O/Ti _x C _y (110) surface were studied. The effective charges on the titanium and carbon atoms surrounding the oxygen atom in various reconstructions were determined. The charge transfer from titanium to oxygen and carbon atoms was found, which is determined by the reconstruction of the local atomic and electronic structures and correlates with chemisorption processes. The potential mechanisms of laser nanostructuring of the titanium carbide surface were suggested.     

Growth and desorption of indium epitaxial layers investigated by high field microscopy

Growth of indium single crystals on tungsten field emission tips was carried out by deposition of indium from vapour in ultra high vacuum, using substrate temperatures in the range of 293–420 K. Two different tungsten tips were used as the substrate: a perfect W single crystal in one case and a bi-crystal with a distinct grain boundary in the other. No influence of the grain boundary on the epitaxial growth was found. Two orientation relationships were observed mostly: {111}In ∥ {110}W with 〈110〉In ∥ 〈111〉W and {111}In ∥ {100}W with 〈110〉In ∥ 〈110〉W. In the first case the growth was initiated by the indium nucleus created on the ledges of the {110}W plane. A field strength of 0.9 V/Å was found for the evaporation field of indium. The field strength of the desorption of In-W interfacial layer atoms was found to be 4.4–5.2 V/Å. A mechanism of the growth of indium crystals has been proposed.     

Surface energy anisotropy of iridium

Field-ion microscopy was used to study the faceting behavior and surface energy anisotropy of iridium in vacuum and in hydrogen. In vacuum below approximately 1300 K the order of faceting and the activation energy for growth of {111} facets agreed with previously published results of FIM studies. The unexpected faceting behavior of {210} planes was examined in terms of the geometry of field evaporated specimens. The observed anisotropy at temperatures above 1300 K was in qualitative agreement with Morse and Mie potential calculations and in nearly quantitative agreement with the pairwise bonding model using σ₂ = 0.4, σ₃ = 0.2. The observed maximum anisotropy of 8.8% for iridium at 1360 K fell within the range of extrapolated values for other metals at one-half the absolute melting temperature. Hydrogen appeared to lower the surface energy of each plane by only about 0.1%. An anisotropic effect of hydrogen on the faceting behavior, however, was observed and suggested that surface diffusion rates in {110} and {311} regions were preferentially increased in the presence of hydrogen.     

Features of the crystal structure of disperse carbides in alpha titanium

Investigations of disperse nonmetallic inclusions in unalloyed alpha titanium VT1-0 have been performed by using transmission electron (including scanning and high-resolution) microscopy. Characteristic electron energy losses spectroscopy has shown that these inclusions are titanium carbide particles. It has been revealed that the disperse carbides are formed in the titanium hcp matrix as a phase based on the fcc sublattice of titanium atoms. The inclusion–matrix orientation relationship corresponds to the well-known Kurdyumov–Sachs and Nishiyama–Wassermann relationships [ 2[`11] 0 ]<sub>\upalpha</sub> ||[ 011 ]<sub>\updelta</sub> \text and ( 000[`1] )_\upalpha ||( 1[`1] 1 )_\updelta {\left[ {2\overline {11} 0} \right]_{{\upalpha }}}\parallel {\left[ {011} \right]_{{\updelta }}}{\text{ and }}{\left( {000\overline 1 } \right)_{{\upalpha }}}\parallel {\left( {1\overline 1 1} \right)_{{\updelta }}} .     

Crystallographic anisotropy in chemisorption: Nitrogen on tungsten single crystal planes

A molecular beam technique for the determination of sticking probabilities and surface coverages was used in earlier work to investigate the adsorption of nitrogen on tungsten {110}, {111} and {100} single crystal planes. In the present paper these studies have been extended to the {310}, {320} and {411} planes. Absolute sticking probabilities and adatom surface coverages are reported for crystal temperatures between 90 K and 960 K. Crystallographic anisotropy in this system is exemplified by zero coverage sticking probabilities with the crystal at room temperature: {110}, 1&#x0303;0^?2; {111}, 0.08; {411}, 0.4; {100}, 0.59; {310}, 0.72; {320}, 0.73. Results for planes on the [001] zone are quantitatively described by a general model developed for adsorption on stepped planes as an extension to the precursor-state order-disorder model for adsorption kinetics of King and Wells. It is shown that nitrogen dissociation only takes place at vacant pairs of {100} sites, but that subsequently the chemisorbed adatoms so formed may migrate out onto {110} terraces. The results are critically analysed in terms of the available LEED and work function data for nitrogen on tungsten single crystal planes, and the general model developed by Adams and Germer.     

Si{111}晶面粒子堵塞坑的新现象

本文报道了从粒子背散射堵塞效应的实验中所发现的单晶Si的{111}晶面粒子堵塞坑的新现象。单晶Si的{111}晶面有两个面间距d_{(111)^(a)和d(111)^(b),而{110}晶面只有一个面间距d(110)。由此导致两者的堵塞坑是不同的,我们已从α粒子和质子的Si单晶堵塞效应的实验得到了证实。并由此估计了d(111)^(a)和d(111)^(b)以及d(110)的2ψ1/2角。据作者了解,到目前为止,国内外还没有人发现此现象。此现象的发现对复杂晶体的堵塞和沟道效应的研究开阔了前景。 关键词：}     

Characterization and field emission characteristics of carbon nanotubes modified by titanium carbide

Carbon nanotubes (CNTs) were modified by depositing a thin layer of titanium film on the surface using magnetron sputtering method, followed by vacuum annealing at 900 °C for 2 h. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirmed that the as-deposited thin titanium film reacted with carbon atoms to form titanium carbide after annealing. The experiment results show that the thickness of sputter-deposited titanium film has significant effect on the field emission J-E characteristic of modified CNTs film. The titanium carbide-modified CNTs film obtained by controlling the titanium sputtering time to 2 min showed an improved field emission characteristics with a significant reduction in the turn-on electric field and an obvious increase in the emission current density as well as an improvement in emission stability. The improvement of field emission characteristics achieved is attributed to the low work function and good resistance to ion bombardment of titanium carbide.     

Oxidation of tungsten single crystals in the presence of a high-electric field

The effects of high-electric fields on oxidation of tungsten single crystals in 6 × 10^?4 torr of oxygen at 1200–1500 °K were studied by field emission and transmission electron microscopy. Exposure of field emitters to oxygen in the absence of a field resulted in the build-up of emitter tips. Oxidation under the application of a negative or positive field, on the other hand, involved plane faceting and formation of oxide crystallites. Plane faceting was recognized to occur on the {111} and the {112} regions, showing the facetings of the {111} and the {112} planes into the {110} planes, whereas, crystallite formation seemed to take place selectively on the {100} regions. It was suggested by field emission microscopy that negative fields have an additional effect which causes the growth of an oxide crystal on the (110) plane. Transmission electron microscopy of an emitter oxidized in a negative field actually revealed a tiny oxide crystal with a size of ～ 300 Å grown on the developed (110) plane. The crystal exhibited a triangular shadow image strongly indicating an external pyramid-like form.     

Evaluating the electric property of different crystal faces and enhancing the Raman scattering of Cu2O microcrystal by depositing Ag on the surface

The surface electric property of Cu₂O microcrystal affects the interaction of facets with substance in the aqueous solution, and hence plays a key role in determining the photocatalytic activity. In this paper, the capability of Cu₂O microcrystals with exclusive {111}, {110} or both lattice surfaces in reducing Ag⁺ to Ag⁰ were investigated. Ag particles selectively deposited on {111} surfaces of Cu₂O, while not on {110} surfaces. The different behaviors of the two surfaces are mainly attributed to their different electric properties: negatively-charged {111} surfaces absorb Ag⁺ ions while positively-charged {110} surfaces repel them. Raman scattering of Cu₂O {111} surfaces was enhanced by the photo-deposition of Ag particles.     

The chemical composition of a metal/ceramic interface on an atomic scale: The Cu/MgO {111} interface

The chemical composition profile across a Cu/MgO {111}-type heterophase interface, produced by the internal oxidation of a Cu(Mg) single-phase alloy at 1173 K, is measured via atom-probe field-ion microscopy with a spatial resolution of 0.121 nm; this resolution is equal to the interplanar spacing of the {222} MgO planes. In particular, we demonstrate directly that the bonding across a Cu/MgO {111}-type heterophase interface, along a <111> direction common to both the Cu matrix and an MgO precipitate, has the sequence Cu|O|Mg... and not Cu|Mg|O...; this result is achieved without any deconvolution of the experimental data. Before determining this chemical sequence, it was established, via high-resolution electron microscopy, that the morphology of an MgO precipitate in a Cu matrix is an octahedron faceted on {111} planes with a cube-on-cube relationship between a precipitate and the matrix; that is, {111}_Cu//{222}_MgO and <110>_Cu // <110>_MgO.     

NiTi记忆合金中R相和马氏体相中孪晶界面的群论分析

利用母相群对低温相群陪集分解的理论,确定了NiTi形状记忆合金中R相存在四种变体,变体之间以{110}_p和{100}_p作为孪晶界面,四种变体可构成三种自适应群。马氏体相中存在三种变体,变体间的孪晶界面为{110}_p,三种变体可以构成四种呈三角形分布的自适应群。所得结果与实验工作基本一致。 关键词：     

XPS study of the deposited Ti layer in a magnetron-type sputter ion pump

X-ray photoelectron spectroscopy (XPS) was used to study the surface chemical composition of the anode deposits in a miniature magnetron ion pump. The pump was mounted on an UHV system with the ultimate pressure of 1 × 10⁻⁹ mbar. A stable discharge was established in the nitrogen atmosphere with some traces of CO at about 10⁻⁷ mbar. The cathode was made of pure titanium. The sputtered titanium atoms deposited on the anode, where they reacted with gases to form a film of titanium compounds. The thickness of the deposited titanium layer on the anode was about 100 nm. The results from XPS investigations indicate that active gases such as O₂ and N₂ react with Ti forming TiO₂ and TiN. While carbon containing molecules just adsorb on the surface and do not form carbide. In the bulk of the deposited layer almost pure TiN was found with some traces of oxygen and carbon. The part of carbon was bonded to TiC, which can be caused by ion sputtering during the depth profiling.     

Blocking-Effekte bei Transmission von α-Teilchen durch Germanium- und Siliziumkristalle

The energy loss of channeled and blocked α-particles of ThC transmitted parallel to the {111} and also the {110} planes of germanium and silicon was investigated. In the spectrum of the transmittedα-particles measured with a small-acceptance-angle detector, in addition to the random and normally channeled α-groups a separated group with a high energy loss was observed in the direction of the {111} planes, while in the direction of the {110} planes this group is not well separated from the randomα-group. A model is proposed which describes this high energy loss for observation in the direction of either plane. In agreement with this model a higher yield ofα-particles with high energy loss in the {111} planes in comparison with the {110} planes of germanium and silicon was measured.     

CVD金刚石薄膜孪晶形成的原子机理分析

采用X射线衍射技术、电子背散射衍射技术和扫描电镜分别观察了不同甲烷浓度条件下沉积的CVD自支撑金刚石薄膜的宏观织构、晶界分布和表面形貌. 研究了一阶孪晶在金刚石晶体{111}面生长的原子堆垛过程. 结果表明，由于一阶孪晶〈111〉60°的取向差关系以及{111}面的原子堆垛结构，使{111}面上容易借助碳原子的偏转沉积产生一阶孪晶. 低甲烷浓度时，碳原子倾向于在表面能较低的{111}面沉积，为孪晶的形成提供了便利，且高频率孪晶使薄膜织构强度减弱. 甲烷浓度升高使生长激活能较小的{001}面成为主要前沿生长面，因而只有〈001〉晶向平行薄膜法向的晶粒能够不断长大，因此孪晶形核概率明显减小. 另外，在薄膜中发现二阶孪晶，并对二阶孪晶的形成进行了分析. 关键词： 金刚石薄膜 孪晶 原子机理 取向差     

Structure and composition of tungsten silicide thermal-field microprotrusions

The thermal-field microprotrusions that grow on the surface of a tungsten tip coated with silicon when the tip is heated in an electric field are investigated by a suite of field emission methods, including electron field emission, ion desorption microscopy, and the atomic-probe method. For Si coatings more than a few monolayers thick, microprotrusions are observed to grow in the field desorption regime when the tip is heated to temperatures T=1100–1200 K in an electric field with initial intensity F=5.7–8.6×10⁷ V/cm. The field at which they evaporate is 1.2–1.8×10⁸ V/cm. The set of moving spots (i.e., microprotrusions) forms rings whose collapse signals the dissolution of the thermal-field growths on the developed faces. The most interesting structures are the sharp microprotrusions that grow on the central facet of a {110} tungsten tip under certain conditions. Atomic-probe analysis of their composition reveals that they consist of tungsten trisilicide WSi₃ with a monolayer surface skin whose composition is close to WSi₂. The intense growth of these formations on an initially smooth closepacked {110} face of tungsten is evidence that reconstruction of the latter takes place under the influence of the strong field and the interaction with silicon. Zh. Tekh. Fiz. 67, 102–109 (September 1997)     

Thermal faceting of the rutile TiO2(001) surface

Temperature dependent faceting of rutile TiO₂ surfaces cut to the (001) plane has been reported [Tait and Kasowski, Phys. Rev. B20 (1979) 5178]. By comparing LEED data to beam positions calculated for various sets of facet planes, the facet planes have been identified. The first ordered structure observed on annealing ion bombarded surfaces is composed of {011} facets with the facet planes in a (2 × 1) reconstruction. The high temperature structure produced on annealing above 1300K is best described as {114} facets; however, there are deviations of the observed LEED pattern from that calculated for {114} facets, possibly because of the presence of related planes. LEED data have now been obtained on the behavior of (110), (100), (011), (114), and (001) surfaces in UHV. The observed stability of TiO₂ surfaces can be related to the Ti ion coordination numbers in the surface plane as derived from stoichiometric terminations of the rutile lattice.     

Field-ion microscopy of GaAs and GaP

Clean surfaces of GaAs and GaP were studied by field-ion microscope (FIM). Field-ion images with ordered surfaces were first obtained in pure hydrogen, neon-50% hydrogen and pure neon gases at 78 K, by using channeltron electron multiplier arrays (CEMA). The field-ion images of GaAs were quite similar to those of GaP with respect to the surface structure and the image contrast. They showed the anisotropies of the ion emission and the surface structure between the [111] and $\text{[}\text{1}\text{1}\text{1}\text{]}$ orientations. Ring steps expected from a spherical surface were observed on the (111) and {100} planes, but not on the $\text{[}\text{1}\text{1}\text{1}\text{]}$ and {110} planes. The regional brightness of the FIM patterns was discussed in terms of the Knor and Müller model and the atomic and electronic structures of the surface. The image field of these crystals was much lower than that of metals usually used in FIM. For example, the image field strength for the hydrogen and GaAs system was about 1.1 V/Å. The reduction of the field necessary to image was also discussed in terms of the field penetration effect.