SiC Schottky结反向特性的研究

对Ti/6H-SiC Schottky结的反向特性进行了测试和理论分析，提出了一种综合的包括SiC Schottky结主要反向漏电流产生机理的反向隧穿电流模型，该模型考虑了Schottky势垒不均匀性、Ti/SiC界面层电压降和镜像力对SiC Schottky结反向特性的影响，模拟结果和测量值的相符说明了以上所考虑因素是引起SiC Schottky结反向漏电流高于常规计算值的主要原因.分析结果表明在一般工作条件下SiC Schottky结的反向特性主要是由场发射和热电子场发射电流决定的.     

Theoretical investigation of thermionic and photoelectric emission from semiconductors in the region of schottky deviation

The properties of semiconductors are similar to those of metals at high temperature, a periodic deviation from the Schottky line in thermionic emission from semiconductors is presumedly expected. The theoretical equation derived based on a modified potential model, which contains a classical image force and exchange and correlation forces has proved successful in the analysis of the periodic deviation from the Schottky line in the thermionic emission from the metals. In this paper, the application of a similar approach to the problem of semiconductors is described. The solution has the same characteristics as that of metal, except that two new parameters, effective mass and dielectric constants, are also included. In the similar fashion, the periodic deviation from the Schottky line in the photoelectric emission from semiconductor is also derived. Although the solutions must be tested by comparison with reliable experimental measurements which are not available at present time. However, in view of the good agreement between the theoretical prediction and experimental data for the metal, present solutions might be a good approach.     

Der Schottky-Effekt an reinen Silizium-Oberflächen

The electric field dependence of the work function of silicon was studied in ultra-high vacuum by thermionic emission at temperatures from 1200°K to 1600°K, and by photoemission at room temperature. A surface with isotropic work function was obtained by flashing the silicon samples at 1620°K. The emission current measured as a function of the applied field was found to follow a Schottky law, similar to the behaviour of metals. However, in contrast to the case of a metallic emitter, the slope of the Schottky plot is dependent on the temperature. The slope increases with increasing temperature reaching the value corresponding to a metal just below the melting point. From the shift of photoelectric threshold with electric field we obtain the lowering of the work function at room temperature. The experimental results are discussed in terms of two models for the image potential of a semiconductor. Periodic deviations from the Schottky effect were observed for both thermionic and photoelectric emission.     

Thermionic emission-tunnelling theory of charge transport through a schottky contact at low injection

The contribution presents a thermionic emission-tunnelling theory of the charge transport through a Schottky contact, valid for low injection. The approach extends the classical thermionic emission theory by incorporating the mechanism of tunnelling across the Schottky barrier. The novelty of this transport model is in considering the transfer of charge carriers in both directions, which is accomplished by introducing the Richardson constant also for electrons in the metal, and in the use of the Global Transfer Matrix technique to compute the relevant transmission coefficients.     

Field emission monotron for THz emission

Small-signal negative conductance of a field emission monotron was calculated, which was considerably higher than that of a thermionic monotron due to strong bunching of emitted electrons in a field emission. The amplification constant of 28dB/mm is achieved at THz wave region by applying the monotron to a distributed amplifier and is sufficient to overcome power loss in a transmission line. In addition, a wide band frequency tunable electromagnetic wave source may be developed at THz wave region by providing a low loss microstrip line resonator with field emission array due to the gate voltage dependent phase constant of the line.     

On the dominant transport mechanism in very thin dielectric films

It is shown that the ratio between tunneling and Schottky thermionic emission currents in MIM structures exhibits a minimum at an applied voltage determined by the structure parameters. For appropriate parameters, the dominant transport mechanism can change from tunneling to Schottky thermionic emission and back to tunneling with increasing applied voltage.     

Dependence of negative resistance characteristics of avalanching MIM diodes on current injection mechanisms

Current-controlled negative resistance characteristics are computed for avalanche injection metal/insulator/metal diodes. Current injection is taken to occur by either Schottky thermionic emission or the Fowler-Nordheim tunneling mechanism. The results presented show that the diode negative resistance characteristics depend critically on both the magnitude and field dependance of injected currents.     

On oscillations of thermionic current in composite systems

Thermionic current emitted into vacuum by a composite system consisting of a metal layer of finite thickness L and a metal half-space is investigated. An explicit expression for thermionic current is obtained that takes into account the quantum phenomena of above-barrier reflection and the strong degeneracy of the electron gas in metal at sufficiently low temperatures. Actually, a generalization of the classical Richardson-Dashmen result is obtained for the case of low temperatures. A special emphasis is placed on the effect of impurities contained in the metal half-space and in the layer on the total thermionic current. It is shown that violation of the strictly periodic field of an ideal crystal due to impurities breaks the one-to-one relation between the momenta and the total energy of conductivity electrons. It is shown that the expression for the generalized distribution function depending on independent variables (energy and momentum) is naturally included in the equation for the thermionic current. Numerical analysis shows that the variation in the distribution function of electrons due to the impurity field leads to variation of the total thermionic current emitted from the system. In particular, an oscillating dependence of the thermionic current on the layer thickness and on the impurity concentration in the layer is revealed. All the calculations are performed within the formalism of nonequilibrium Green’s functions.     

A vertical transport geometry for electrical spin injection and extraction in Si

Schottky barriers formed between ferromagnetic metal and Semiconductor are of particular interest for spin injection and detection experiments. Here, we investigate electrical spin polarized carrier injection and extraction in Si using a Co/Si/Ni vertical structure built on a 250 nm thick Si membrane. Current–voltage measurements performed on the devices at low temperatures showed evidence of the conduction being dominated by thermionic field emission, which is believed to be the key to spin injection using Schottky junctions. This, however, proved inconclusive as our devices did not show any magnetoresistance signal even at low temperatures. We attribute this partially to the high resistance-area product in our Schottky contacts at spin injection biases. We show the potential of this vertical spin-device for future experiments by numerical simulation. The results reveal that by growing a thin highly doped Ge layer at the Schottky junctions the resistance-area products could be tuned to obtain high magnetoresistance.     

Phänomenologische Betrachtung zur Photon-Elektron-Wechselwirkung in einem Plasma

The question at stake is, whether a simple physical connection may be found between Richardson equation for thermionic emission on the one hand, and Richardson equation for photoelectric emission on the other hand. The proposition of such a connection is based on the following supposition: that electrons are not only elements of a (Fermi-Dirac-) statistical ensemble and, as such, cause thermionic phenomena; but that they can also interact with a radiation field, thereby causing an additional emission current, according to Richardson (photoelectric) equation. — It is shown in detail that the current emitted from a metal of 2000 °K is determined by the complete radiation of this metal only to a very slight degree. It is then estimated however, that within temperatures of some million degrees Kelvin the excitation of electrons caused by complete radiation will be much greater than that caused by interaction.     

Principles of quantum computation and information: a comprehensive textbook

The current flow between two (normal) metal electrodes, separated by a vacuum gap or an insulating layer, is considered from a general point of view as a process of electron transits through and over a potential energy barrier. The main results of a unified theory of field and thermionic emission, which takes into account the band structure of the insulator, are discussed. Experiments confirming the theory both for the cases of electron emission in vacuum and in some insulators are also considered. Certain directions of future work on experimental tests of the independent-electron model for the emission process are suggested.     

用变粒子数PARMELA程序作热场发射微波枪数值模拟计算

本文按Schottky方程给出热场发射微波枪阴极电流之值来确定PARMELA程序在每一时间步长内输入粒子数,使PARMELA程序能用来作热场发射微波枪电子的动力学计算,改善了把PARMELA程序不加修改直接用于热场发射微波枪计算而带来的不合理图象。     

Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes

The current–voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current–voltage data of the metal–insulator–semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current–voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal–semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal–insulator–semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal–insulator–semiconductor diodes are analysed and possible mechanisms are discussed.     

Carrier transport mechanism of strained AlGaN/GaN Schottky contacts

Using polarization field effect-based thermionic field emission (PFE-TFE) model based on current–voltage–temperature data, possible carrier transport mechanisms for Pt/Au and Cr/Pd Schottky contacts to Al_0.25Ga_0.75N/GaN layers were investigated. Thermionic emission (TE) model was also investigated to compare to the PFE-TFE. It was shown that Schottky barrier heights (SBHs) are significantly affected by a polarization field-induced carrier density of the AlGaN layer. In addition, relatively little temperature dependence on the leakage current density of both contacts was found, which is in good agreement with the PFE-TFE model. The results indicate that the TFE is responsible for the current flow across the metal/AlGaN–GaN interface at T ≥ 293 K.     

Electron Spectrum of Nonlinear Cold Emission from a Metal under the Action of a Laser Shot

The nonlinear emission of electrons from a metal under the action of a femtosecond moderate-intensity laser pulse (laser shot) has been studied. A theoretical model of the process has been constructed based on the 1D nonstationary Schrödinger equation in the vacuum half-space with given boundary conditions for the electron wavefunction. This equation has been solved using the Laplace transformation. It has been assumed that the states of free electrons in a metal, which are described by the Sommerfeld theory of metals, are insignificantly influenced by the laser field. The energy spectrum of emitted electrons has been obtained, and its dependence on the parameters of the lased shot has been found. The calculated spectrum of nonlinear electron emission from a tungsten nanotip under the action of a 6.5-fs-long laser shot generating a field of 9.26 V/nm agrees with the experimental data.     

Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density–voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson–Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler–Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.     

High-temperature current conduction through three kinds of Schottky diodes

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I--V--T measurements ranging from 300 to 523~K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density.     

Phase of reflection of very low energy electrons at crystal surfaces

The amplitude coefficients of electron reflection at crystal surfaces are complex numbers, each of which may be characterized by a reflection intensity (the squared modulus of the coefficient) and a phase. The phase of reflection of very low energy (? 10 eV) electron reflection is described on the basis of existing theory, and experimental approaches to phase determination are reviewed. Theoretical properties of the phase are described on the basis of the two-beam dynamical theory of diffraction. The model considered is an idealized substrate crystal with an attached selvedge (surface region). The indirect effect of inelastic scattering (absorption) is included by going to complex values of the electron energy or of the surface-normal component K of the propagation vector. In the absence of a selvedge the phase is determined solely by the band structure of the substrate crystal. If a selvedge is present there are large additional effects on the phase associated with zeros of the amplitude coefficient of reflection on the complex K plane. The experimental approaches considered are: (1) measurement of the kinetic energy distributions of ions produced in the field ion microscope, and (2) measurement of the periodic deviations from the Schottky line in field-assisted thermionic emission and photo-emission. Recent results of phase determination for W (011) surface by method (1) are summarized and compared with theoretical expectations.     

Thermionic field emission of electrons from metals and explosive electron emission from micropoints

We suggest a general approach to considering the thermionic, field, and thermionic field emissions of electrons from metals. For this purpose, based on the standard model of free electrons in a metal, we suggest a numerical method for determining the transmission coefficient through the potential barrier at the metal-vacuum interface suitable for an arbitrary barrier. This method is free both from the approximations based on the saddle-point approximation and characteristic of the analytical models for thermionic emission and from the approximations for the tunneling coefficient through the potential barrier characteristic of the models for field emission. Based on numerical simulations, we determine the thermal effect of the emission and ascertain that a very sharp transition from surface cooling by electron emission to heating occurs at certain electric field and temperature. We explain the triggering mechanism of the explosive electron emission observed during micropoint explosions by this phenomenon. The explosive emission is shown to begin when the level of the potential barrier at the micropoint tip drops below the Fermi level in the metal.     

Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range

We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The current–voltage (I–V) and capacitance–voltage (C–V) measurements have been carried out in the temperature range of 300–400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Φ_bo) and ideality factor (n) are estimated from I–V characteristics. It is observed that there is a decrease in n and an increase in the Φ_bo with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Φ_bo and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (R_s) is calculated by Chenug's method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both Poole–Frenkel and Schottky emissions are described and discussed. Furthermore, capacitance–voltage (C–V) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman's method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.