The QE numerical simulation of PEA semiconductor photocathode

Several kinds of models have already been proposed to explain the photoemission process. The exact photoemission theory of the semiconductor photocathode was not well established after decades of research. In this paper an integral equation of quantum efficiency (QE) is constructed to describe the photoemission of positive electron affinity (PEA) of the semiconductor photocathode based on the three-step photoemission model. Various factors (e.g., forbidden band gap, electron affinity, photon energy, incident angle, degree of polarization, refractive index, extinction coefficient, initial and final electron energy, relaxation time, external electric field and so on) have an impact on the QE of the PEA semiconductor photocathode, which are entirely expressed in the QE equation. In addition, a simulation code is also programmed to calculate the QE of the K₂CsSb photocathode theoretically at 532 nm wavelength. By and large, the result is in line with the expected experimental value. The reasons leading to the distinction between the experimental and theoretical QE are discussed.     

衍射图样的数值模拟

介绍了平面波角谱理论中得到衍射积分公式的方法.用Matlab计算了15×15矩孔阵列近场区域的衍射图样,在距离周期衍射屏特定距离处出现衍射屏的自成像.     

The optimal thickness of transmission-mode GaN photocathode

A 150-nm-thick GaN photocathode with an Mg doping concentration of 1.6× 10¹⁷cm^-3 is activated by Cs/O in ultrahigh vacuum chamber, and quantum efficiency (QE) curve of negative electron affinity transmission-mode (t-mode) GaN photocathode is obtained. The maximum QE reaches 13.0% at 290 nm. According to the t-mode QE equation solved from the diffusion equation, the QE curve is fitted. From the fitting results, the electron escape probability is 0.32, the back-interface recombination velocity is 5× 10⁴ cm·s^-1, and the electron diffusion length is 116 nm. Based on these parameters, the influence of GaN thickness on t-mode QE is simulated. The simulation shows that the optimal thickness of GaN is 90 nm, which is better than the 150-nm GaN.     

GaN光电阴极激活后的光谱响应分析

由于GaN光电阴极的突出性能,其在紫外探测方面有着广泛的应用.文章在超高真空激活系统中,对GaN样品进行了 Cs/O激活实验,并分析了激活后反射式的量子效率:在240～350nm的紫外波段内,量子效率约在30％～10％之间,曲线较为平坦,在240nm处达到30％的最大值,与国外结果对比后发现,本文获得的GaN光电阴极量...     

The optimal thickness of a transmission-mode GaN photocathode

A 150-nm-thick GaN photocathode with a Mg doping concentration of 1.6×1017cm-3 is activated by Cs/O in an ultrahigh vacuum chamber,and a quantum efficiency(QE) curve of the negative electron affinity transmission-mode(t-mode) of the GaN photocathode is obtained.The maximum QE reaches 13.0% at 290 nm.According to the t-mode QE equation solved from the diffusion equation,the QE curve is fitted.From the fitting results,the electron escape probability is 0.32,the back-interface recombination velocity is 5×104 cm·s-1,and the electron diffusion length is 116 nm.Based on these parameters,the influence of GaN thickness on t-mode QE is simulated.The simulation shows that the optimal thickness of GaN is 90 nm,which is better than the 150-nm GaN.     

The numerical simulation of two-dimensional aluminized composite solid propellent combustion

A numerical framework is presented which examines, for the first time, the burning of two-dimensional aluminized solid propellants. Aluminized composite propellants present a difficult mathematical and numerical challenge because of complex physics and topological changes that occur at the propellant surface. For example, both mathematical models and appropriate numerical solvers must describe the regressing burning surface, aluminium particle detachment and evolution throughout the gas-phase flow field, surface tension effects, ignition and combustion of aluminium particles, phase change effects, agglomeration of aluminium particles, radiation feedback to the propellant surface, to name a few. All of these effects must be modelled in a consistent manner. A numerical framework for which these effects can be included in a rational fashion is currently being developed. This framework includes the level set method to capture the solid–gas interface as well as particle motion in the gas phase. Some preliminary calculations of the two-dimensional combustion field supported by a disc pack with embedded aluminium particles are presented.     

The three-dimensional numerical simulation of aluminized composite solid propellant combustion

A three-dimensional numerical framework is presented that examines the burning of aluminized solid propellants. The numerical solver accounts for heat conduction in the solid, combustion in the gas phase, and coupling of these by means of a level set method. The aluminium particles are treated as heat conducting solid spheres. The aluminium particle detachment process is modelled using level sets, but once the particle becomes free from the surface, its subsequent motion in the gas phase is governed by particle dynamics. Some preliminary calculations of the three-dimensional combustion field supported by a pack with embedded aluminium particles are presented.     

基于快速傅里叶变换的衍射现象的数值仿真

根据夫琅禾费衍射与傅里叶变换的关系,通过构建数值遮光屏,并利用快速傅里叶变换,可以获得夫琅禾费衍射图样的二维仿真及其相对光强的三维分布图．利用Matlab实现了对单缝、圆孔及多缝的衍射现象的仿真．结果显示,该方法思路清晰,结果准确可靠,可作为教学中分析夫琅禾费衍射现象的另一种有效方法．     

Time-dependent numerical simulation of ablation-controlled arcs

A zero-dimension (0-D) time-dependent code (ZEUS) developed to simulate ablation-controlled arc (ACA) behavior is discussed. The code includes energy transport, equation-of-state, and electrical resistivity models. Particular attention is given to the equation-of-state and the determination of the charged state of multicomponent plasma under local thermodynamic equilibrium (LTE) conditions. The 0-D model is self-consistently solved by the fourth-order Runge-Kutta method. The numerical simulation of ZEUS was compared with both experimental and other theoretical results. Comparison with experimental results demonstrates that the numerical simulation can correctly predict the behavior of ACAs     

Clinotron的初步理论和数值模拟

在理论分析的基础上,模拟研究了微电真空太赫兹器件Clinotron。求解了色散方程,获得该器件的基本结构参数和性能参数;在考虑空间电荷场和电子回旋运动的情况下,得出能使器件内片状束稳定传输的周期永磁聚焦的磁场条件;利用3维全电磁粒子模拟程序对Clinotron进行了初步模拟以及优化。数值模拟结果表明:当输入电压为4.5 kV、发射束流大小为190 mA、输入电功率为855 W时, 运行频率为218 GHz的Clinotron的输出平均功率40 W,功率转换效率达4.68%。     

PSTM成像的FDTD数值模拟

尝试用时域有限差分法(FDTD)分析采用不同探针时光子扫描隧道显微镜(PSTM)成像的分辨率和效率。对四种探针,即不镀膜,带菱形金尖,镀金膜有孔径,镀金膜无孔径的探针,用二维p极化波,满足全反射条件,并用样品台上方平行于界面的隐失波作为等效入射波源,用探针距离尖顶一定高度截面的玻印亭矢量计算散射场强。数值模拟结果表明,带纳米尺度金尖的探针具有最好成像的分辨率和效率,镀膜无孔径和镀膜孔径探针次之,不镀膜探针最差。     

Clinotron的初步理论和数值模拟

在理论分析的基础上,模拟研究了微电真空太赫兹器件Clinotron。求解了色散方程,获得该器件的基本结构参数和性能参数;在考虑空间电荷场和电子回旋运动的情况下,得出能使器件内片状束稳定传输的周期永磁聚焦的磁场条件;利用3维全电磁粒子模拟程序对Clinotron进行了初步模拟以及优化。数值模拟结果表明：当输入电压为4.5 kV、发射束流大小为190 mA、输入电功率为855 W时, 运行频率为218 GHz的Clinotron的输出平均功率40 W,功率转换效率达4.68%。     

透射式变掺杂GaAs光电阴极研究

为了将变掺杂GaAs材料应用于微光像增强器,开展了透射式变掺杂GaAs光电阴极实验研究,制备了2种反转结构透射式变掺杂GaAs光电阴极。测试了玻璃粘接前后GaAs光电阴极载流子浓度变化,发现高温粘接后载流子浓度增加现象。通过测试高温激活的透射式变掺杂GaAs光电阴极发现,在450 nm～550 nm波段内,变掺杂GaAs光电阴极仍然具有较高的光谱响应。     

梯度掺杂结构GaN光电阴极的稳定性

利用GaN光电阴极多信息量测试评估系统,对反射式梯度掺杂和均匀掺杂GaN光电阴极样品进行了激活及衰减后的量子效率测试,并测试衰减速率。在同样的衰减时间内,和均匀掺杂样品相比,梯度掺杂样品的衰减比例较小,衰减速率较慢,其原因在于梯度掺杂结构可在其发射层内部产生系列内建电场,致使其能带连续向下弯曲,导致其表面真空能级比均匀掺杂样品下降得更低,发射层表面形成的负电子亲和势更明显,造成发射层内的光生电子更易逸出,阴极量子效率的衰减变慢,从而使其稳定性强于均匀掺杂结构。     

二维弹塑性磁流体力学数值模拟

为了研究物质弹塑性对磁驱动实验运动过程、不稳定性发展等的影响,在MDSC2程序的基础上,增加了弹塑性模块,研制了包括弹塑性的磁流体力学程序,并进行了弹塑性项影响的数值模拟和分析。数值模拟表明：没有初始扰动时,弹塑性项几乎不影响套筒内外半径的运动轨迹;有初始扰动时,弹塑性项对磁驱动固体套筒的Rayleigh-Tayor不稳定性有明显的抑制作用。     

棒状分子聚合物溶液的微宏观数值模拟

利用微宏观耦合方法模拟了棒状分子聚合物溶液在平板Couette流动中的复杂流变行为,其中微宏观模型通过非均匀Doi理论来描述.数值模拟中,应用有限体积方法耦合求解了介观尺度上的Smoluchowski方程和宏观尺度上的流场守恒方程.数值结果不仅得到了若干种典型的流动类型,而且还预测了另外两种新的复合瑕疵结构.数值试验表明：棒状分子聚合物的流变结构主要依赖于De数、分子相对尺度以及溶液浓度常数的取值;并且De数对分子指向矢的翻滚周期、随流取向角等微观特性也均有明显影响. 关键词： 棒状分子 聚合物溶液 微宏观模拟     

受激布里渊散射并行数值模拟研究

为了更深入地研究激光与等离子体相互作用中受激Brillouin散射不稳定性的物理机制,建立了受激Brillouin散射三波耦合数学模型,根据方程组的形式以及数学特征, 采用算子分裂方法,坐标平移,高效的并行傅里叶变换和归约密度等算法,编制模拟受激Brillouin散射不稳定性的并行程序,并用数值算例证明其有效性,最后采用近3亿固定网格规模,扩展到4096个核上测试并行性能,并行效率达到81.6%。     

三角调频连续波建模与数值仿真

三角调频连续波由于测距精度高,所以在测距系统中有着广泛的应用。结合模数函数、绝对值函数和符号函数,推导了三角调频连续波的频率和相位的数学表达式,并进行了建模及仿真。仿真结果表明,频率和相位的数学表达式满足微积分的关系,能够描述三角波调频在跨越调频周期时的不连续性。