Comparison study of the charge density distribution induced by heavy ions and pulsed lasers in silicon

Heavy ions and pulsed lasers are important means to simulate the ionization damage effects on semiconductor materials. The analytic solution of high-energy heavy ion energy loss in silicon has been obtained using the Bethe-Bloch formula and the Kobetich-Katz theory, and some ionization damage parameters of Fe ions in silicon, such as the track structure and ionized charge density distribution, have been calculated and analyzed according to the theoretical calculation results. Using the Gaussian function and Beer's law, the parameters of the track structure and charge density distribution induced by a pulsed laser in silicon have also been calculated and compared with those of Fe ions in silicon, which provides a theoretical basis for ionization damage effect modeling.     

Degradation mechanisms of current gain in NPN transistors

An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors (BJTs) is presented. The transistors were irradiated separately with 90-keV electrons, 3-MeV protons and 40-MeV Br ions. Key parameters were measured {\em in-situ} and the change in current gain of the NPN BJTS was obtained at a fixed collector current (I_{\rm c}=1~mA). To characterise the radiation damage of NPN BJTs, the ionizing dose D_{\i} and displacement dose D_{\d} as functions of chip depth in the NPN BJTs were calculated using the SRIM and Geant4 code for protons, electrons and Br ions, respectively. Based on the discussion of the radiation damage equation for current gain, it is clear that the current gain degradation of the NPN BJTs is sensitive to both ionization and displacement damage. The degradation mechanism of the current gain is related to the ratio of D_{\rm d}/(D_{\rm d}+D_{\rm i}) in the sensitive region given by charged particles. The irradiation particles leading to lower D_{\rm d}/(D_{\rm d}+D_{\rm i}) within the same chip depth at a given total dose would mainly produce ionization damage to the NPN BJTs. On the other hand, the charged particles causing larger D_{\rm d}/(D_{\rm d}+D_{\rm i}) at a given total dose would tend to generate displacement damage to the NPN BJTs. The Messenger--Spratt equation could be used to describe the experimental data for the latter case.     

Investigation of interaction between lithium and tantalum under a silicon film coating by electron-stimulated desorption technique

The electron-stimulated desorption of Li⁺ ions from lithium layers adsorbed on the tantalum surface coated with a silicon film has been investigated. The measurements are performed using a static magnetic mass spectrometer equipped with an electric field-retarding energy analyzer. The threshold of the electron-stimulated desorption of lithium ions is close to the ionization energy of the Li 1s level. The secondary thresholds are observed at energies of about 130 and 150 eV. The threshold at an energy of 130 eV is approximately 30 eV higher than the ionization energy of the Si 2p level and can be associated with the double ionization. The threshold at 150 eV can be caused by the ionization of the Si 2s level. It is demonstrated that the yield of Li⁺ ions does not correlate with the silicon amount in near-the-surface region of the tantalum ribbon and drastically increases at high annealing temperatures. The dependence of the current of Li⁺ desorption on the lithium concentration upon annealing of the tantalum ribbon at T>1800 K exhibits two maxima. The ions desorbed by electrons with energies higher than 130 and 150 eV make the largest contribution to the current of lithium ions after the annealing. The yield of lithium ions upon ionization of the Li 1s level at an energy of 55 eV is considerably lesser, but it is observed at higher concentrations of deposited lithium. The results obtained can be interpreted in the framework of the Auger-stimulated desorption model with allowance made for relaxation of the local surface field.     

质子辐射下互补金属氧化物半导体有源像素传感器暗信号退化机理研究

对某国产0.5 μm工艺制造的互补金属氧化物半导体有源像素传感器进行了10 MeV质子辐射试验, 当辐射注量达到预定注量点时, 采用离线的测试方法, 定量测试了器件暗信号的变化情况. 试验结果表明, 随着辐射注量的增加暗信号迅速增大. 采用MULASSIS (multi-layered shielding simulation software)软件计算了电离损伤剂量和位移损伤剂量, 在与γ辐射试验数据对比的基础上, 结合器件结构和工艺参数, 建立了分离质子辐射引起的电离效应和位移效应理论模型, 深入分析了器件暗信号的退化机理. 研究结果表明, 对该国产器件而言, 电离效应导致的表面暗信号和位移效应导致的体暗信号对整个器件暗信号退化的贡献大致相当.     

Ionization probability of sputtered particles as a function of their energy: Part II. Positive Si ions

In this paper we represent the experimental ionization probability of sputtered silicon atoms as a function of their energy, which has been obtained for positive Si⁺ ions sputtered from silicon by O₂⁺ ion beam. To explain the experimental data, we have considered ionization of an outgoing atom at a critical distance from the surface, which occurs due to the electron transition between this atom and the surface, and suggested the formation of a local surface charge with the polarity opposite to that of the outgoing ion that has just been formed. Then we have considered the interaction between those two charges, outgoing ion, and surface charge as a process of the particle passage through a spherical potential barrier; as a result, we have obtained the theoretical energy distribution of secondary ions. Together with the well-known Sigmund-Thompson energy distribution of sputtered atoms, the obtained ion energy distribution allowed us to derive the equation for the secondary ion yield versus the sputtered particle energy. Both equations derived have exhibited a quite good correlation with our experimental results and also with a large number of published experimental data.     

Secondary-ion emission from silicon bombarded with atomic and molecular noble-gas ions

The emission of Si⁺ from a clean silicon surface has been studied for bombardment with various atomic and molecular noble gas ions at energies between 1.5 and 30 keV. It was found that the degree of ionization of Si⁺ depends strongly (l?inearly) on the projectile energy but only weakly on the projectile mass. These results suggest that the degree of ionization is heavily affected by the (dynamic) perturbation of the bulk properties of the bombarded area which increases with increasing nuclear energy deposition.     

Observation of an enhanced gettering effect in silicon under germanium molecular ion implantation

Germanium atomic (Ge₁ ⁺) and molecular ions (Ge₂ ⁺) of equal energy per atom are implanted in silicon at an elevated temperature. The ion induced damage has been monitored by following the intensity variation of the LO Raman peak of Si. The germanium implanted samples have been labeled with 10 keV Au ions. The gettering of gold has been observed by Rutherford backscattering spectrometry in the post-annealed samples. This paper reports a first time observation of an enhanced gettering of gold in silicon implanted with molecular ions. PACS 61.72.Ji; 61.80.Lj; 61.80.Jh; 61.72.Yx     

MeV微集团束与物质的相互作用

简述了有关MeV微集团离子束与物质表面相互作用研究的概况．介绍了在北京大学技术物理系和重离子物理所１．７ＭＶ串列加速器上开展的有关实验研究及取得的初步结果． The recent development on investigation of MeV microcluster beam interaction with matter is outlined. And based on 5SDH 2 Pelletron of Peking University, some relative experimental results, such as identification and Rutherford backscattering measurement of MeV carbon cluster ions, stopping power of MeV silicon microcluster ions in Al film, damage producted in silicon by MeV silicon microcluster irradiation, etc. are briefly introduecd.     

Spatial distribution of defects produced by boron ion implantation of silicon

A simple technique for the study of the spatial distribution of the damage produced by ion implantation of silicon has been developed. The damage depth distribution for 40 keV boron ions in silicon has been studied at irradiation doses from 7 × 10¹¹ to 3.9 × 10¹⁴ ions/cm² and the relative defect peak depth R _d/R _p = 0.85 determined. An increase of layer conductivity as the surface part of the implanted layer is removed has been revealed. This effect is caused by the presence of radiation defects in the surface region of the layer. The “electrical” cluster diameter is about 28 A and the overlapping cluster dose is close to 1 × 10¹³ ions/cm².     

TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon

Extended lattice damage created by implantation of 3.6 MeV Au²⁺ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au²⁺ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.     

Radiation effects of 50-MeV protons on PNP bipolar junction transistors

The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.     

Effect of the ionization energy loss density of high-energy bismuth,krypton, and xenon ions on the development of hydrogen blisters in silicon

Radiation-induced athermal hydrogen removal from single-crystal silicon subjected to irradiation by high-energy heavy Bi⁺ (E = 710 MeV), Kr⁺ (E = 85 and 250 MeV), and Xe⁺ (130 MeV) ions is detected experimentally. The decrease in the hydrogen concentration depends on the specific ionization energy losses of high-energy heavy ions. At high specific ionization losses of Bi⁺ ions with E = 710 MeV (22.5 keV/nm), the hydrogen concentration decreases to a level at which blisters cannot be observed in an optical or electron microscope (which is likely to be 1 at % hydrogen at the peak of the calculated hydrogen concentration profile). At medium specific ionization losses of Xe⁺ ions with E = 130 MeV (12.5 keV/nm) and Kr⁺ ions with E = 250 and 85 MeV (9.5 and 8.5 keV/nm, respectively), the hydrogen concentration decreases to a level that does not affect blister formation but determines the blister failure (flaking) conditions.     

电磁辐照金属铝膜材料释气效应研究

为研究空间环境中通用航天器表面覆盖的热控层电磁辐照效应,采用粒子模拟(PIC)和蒙特卡罗(MC)模拟相结合方法,建立了真空环境下电磁辐照航天器热控材料模型,模拟了场致电子发射、次级电子倍增、释气雪崩电离的全过程,并讨论了释气密度对热防护材料表面产生释气电离现象的影响。通过对比不同释气密度下该过程产生的电子和离子情况,获得热防护材料表面释气产生雪崩电离的阈值。模拟结果表明,当铝膜表面气体密度较小时,由于材料表面释气碰撞电离概率偏低而不会发生雪崩电离;只有当释气密度超过阈值时,材料表面释气碰撞电离过程加强,材料表面发生雪崩电离生成等离子体,等离子体吸收电磁波能量,其离子和电子总能量提升,可能对金属铝膜材料造成损伤。     

电子与多电荷离子的碰撞电离(英文)

主要揭示了不同电离机制对高电荷态离子单电离和多重电离的贡献 ,包括直接电离 (一步过程 )、激发 自电离 (两步过程 )以及内壳Auger过程 ,研究了高电荷态镨离子的电子碰撞电离. Electron-impact ionization of ions is one of the most fundamental processes in every kind of plasma. Especially in high-temperature plasmas-whether in laboratory (nuclear fusion) or in astrophysics (atmosphere of stars)-atoms become ionized into multiply-charged ions by electron impact. The main purpose of our investigations is to unravel the contributions from different ionization mechanisms-like direct ionization (one-step process), excitation-autoionization (two-step process) and...     

离子注入硅的椭圆偏振光谱和光性

为了进一步发展测定离子注入损伤层的椭圆偏光法,我们测量了离子注入硅在4000—7000?波长范围内的椭圆偏振光谱,并由此得到它的色散关系。注入条件为150keV,10¹⁵cm^-2和10¹⁶cm^-2的砷离子注入。由于在硅样品表面处形成无定形层,我们用单层模型,从(ψ,Δ)-λ数据计算出(n,k)-λ关系,并可定出损伤层厚度。在～4800?处,出现折射率n的谱峰,峰值约4.9。本文还比较了离子注入损伤层、溅射无定形硅膜层、蒸发无定形硅膜层和单晶硅的实验结果。 关键词：     

Effect of inelastic and elastic energy losses of Xe ions on the evolution of hydrogen blisters in silicon

We analyze the effect of irradiation by heavy ions on the formation of blisters on the silicon surface preliminarily ion-doped with hydrogen. An attempt is made at differentiating inelastic and elastic processes of interaction between ions and Si atoms using bombardment of the sample with high-energy charged particles through a bent absorbing filter by varying the radiation doses and the energy of bombarding Xe ions. It is found that irrespective of specific ionization energy losses of heavy ions, the blister formation is completely suppressed in the zone of the inelastic interaction during postradiation annealing. Conversely, stimulated development of hydrogen porosity takes place at the same time in the zone of elastic interaction, which is manifested in the form of blisters and flaking.     

Monte Carlo simulation on in-situ annealing of disorder

This work presents a Monte Carlo simulation of the spontaneous recovery of damage in a silicon target periodically exposed to a beam of energetic ions. Each exposure is supposed to generate vacancy-interstitial pairs with a random distribution and the transient following each flash is analysed by simulating the random walks of defects. The occurrence of events such as clustering and annihilation is examined in terms of dose and damage growth-rate. The results of the simulation are compared with TEM observations.     

The enhancement of the anodization of ion implanted silicon and its novel application

The enhancement of the anodization of silicon due to ion implantation is observed to be significant in the case of heavy ion implant with doses more than 10¹⁴ ions/cm². The studies indicate that the chemical effect caused by the implanted ions is smaller, but the lattice defects introduced by the implantation play an important role in the enhancement of the oxidation rate. A novel application of this effect to investigate the depth profile of damage in heavy implanted silicon is shown.     

Comparative results on collimation of the SPS beam of protons and Pb ions with bent crystals

New experiments on crystal assisted collimation have been carried out at the CERN SPS with stored beams of 120 GeV/c protons and Pb ions. Bent silicon crystals of 2 mm long with about 170 μrad bend angle and a small residual torsion were used as primary collimators. In channeling conditions, the beam loss rate induced by inelastic interactions of particles with the crystal nuclei is minimal. The loss reduction was about 6 for protons and about 3 for Pb ions. Lower reduction value for Pb ions can be explained by their considerably larger ionization losses in the crystal. In one of the crystals, the measured fraction of the Pb ion beam halo deflected in channeling conditions was 74%, a value very close to that for protons. The intensity of the off-momentum halo leaking out from the collimation station was measured in the first high dispersion area downstream. The particle population in the shadow of the secondary collimator-absorber was considerably smaller in channeling conditions than for amorphous orientations of the crystal. The corresponding reduction was in the range of 2-5 for both protons and Pb ions.     

Internal energy content of n-butylbenzene, bromobenzene, iodobenzene and aniline molecular ions generated by two-photon ionization at 266 nm. A photodissociation study

A technique to investigate photodissociation kinetics on a nanosecond time scale has been devised for molecular ions generated by multiphoton ionization (MPI) using mass-analyzed ion kinetic energy spectrometry. The branching ratio or rate constant has been determined for the photodissociation of the n-butylbenzene, bromobenzene, iodobenzene, and aniline molecular ions generated by MPI at 266 nm. The ion internal energies have been estimated by comparing the measured kinetic data with the previous energy dependence data. The analysis has shown that only those molecular ions generated by two-photon ionization contribute to the photodissociation signals. Around half of the available energy has been found to remain as molecular ion internal energy in the two-photon ionization process. Copyright 1999 John Wiley & Sons, Ltd.