Coulomb oscillations of the current through spin-nondegenerate <Emphasis Type="Italic">p</Emphasis> states of InAs quantum dots

The electron transport is studied in split-gate structures fabricated on the basis of a modulation-doped heterostructure that contains a single quantum well and self-assembled InAs quantum dots near the 2D electron gas regions. The current passing through the channel with a denumerable set of InAs quantum dots is found to exhibit Coulomb oscillations as a function of the gate voltage. The oscillations are associated with the excited p states of InAs quantum dots, which are characterized by opposite spins and caused by lifting of the spin degeneracy of the p state due to the Coulomb interaction. The Coulomb oscillations of the current are observed up to a temperature of ～20 K. The Coulomb energy is found to be ΔE_c = 12.5 meV, which agrees well with the theoretical estimates for the p states of quantum dots in the structures under study.     

Reflection and absorption of light by a quantum well in a strong magnetic field under pulsed irradiation

The interaction between a quantum well with a large number of equidistant excited electron energy levels and light is investigated. It is shown that nonsinusoidal oscillations occur in the transmitted, reflected, and absorbed energy fluxes under exposure of the quantum well to irradiation with light pulses. For long pulses whose length γ _l ^?1 is one order of magnitude longer than the time ?/ΔE (where ΔE is the energy level spacing), the oscillation amplitude is small. In the case of narrow pulses when γ _l ^?1 ≤?/ΔE, the oscillation amplitude is comparable to the flux magnitudes. For very narrow pulses with

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, the decaying echo of exciting pulse should be observed at the time intervals 2π?/ΔE. Symmetric and asymmetric pulses are considered. The theory is applicable to narrow quantum wells in a strong magnetic field when the equidistant levels correspond to electron-hole pairs with different Landau quantum numbers.

     

Dependence of the magnitude and direction of the persistent current on the magnetic flux in superconducting rings

The obtained periodic magnetic-field dependences I _c+(Φ/Φ₀) and I _c?(Φ/Φ₀) of the critical current measured in opposite directions on asymmetric superconducting aluminum rings has made it possible to explain previously observed quantum oscillations of dc voltage as a result of alternating current rectification. It was found that a higher rectification efficiency of both single rings and ring systems is caused by hysteresis of the current-voltage characteristics. The asymmetry of current-voltage characteristics providing the rectification effect is due to the relative shifts of the magnetic dependences I _c?(Φ/Φ₀) = I _c+(Φ/Φ₀ + Δ?) of the critical current measured in opposite directions. This shift means that the position of I _c+(Φ/Φ₀) and I _c?(Φ/Φ₀) minima does not correspond to n + 0.5 magnetic flux Φ quanta, which is in direct contradiction to measured Little-Parks resistance oscillations. Despite this contradiction, the amplitude I _{c, an}(Φ/Φ₀) = I _c+(Φ/Φ₀) ? I _c?(Φ/Φ₀) of critical current anisotropy oscillations and its variations with temperature correspond to the expected amplitude of persistent current oscillations and its variations with temperature.     

Nonlinear magnetotransport in a high-mobility quasi-two-dimensional electron system

The influence of a dc electric current I _dc on the low-temperature magnetotransport of high-mobility electrons in a GaAs double quantum well with two occupied size-quantization levels has been studied. The oscillations of the resistance ρ _xx , which are periodic in the inverse magnetic field, have been shown to appear in the quasitwo-dimensional system under consideration at a temperature of T = 4.2 K in magnetic fields B > 0.1 T; the oscillations are caused by isoenergetic resonance transitions of the electrons between the Landau levels of different subbands. The inversion of the oscillations with an increase in I _dc has been discovered. It has been found that the observed effect is due to the electron transport in a nonlinear regime.     

Zener tunneling between Landau levels in a double quantum well at high filling factors

Differential resistance r _xx in a double GaAs quantum well with two occupied size-quantization subbands has been studied at a temperature of 4.2 K in magnetic fields B < 2 T. The oscillations of r _xx with a period in the inverse magnetic field determined by the value of a dc bias current I _dc have been discovered in the electron system under investigation at high filling factors in the presence of I _dc. The amplitude of magneto-intersubband oscillations has been shown to increase in the r _xx oscillation maxima, while the oscillation reversal has been observed in the minima. The discovered oscillations have been shown to be due to Zener tunneling of electrons between Landau levels tilted by a Hall electric field. The experimental data are qualitatively explained by the effect of intersubband transitions on the I _dc-dependent component of the electron distribution function.     

Electron localization during an electronic-topological transition in Mo-Re alloys

Oscillations in the superconducting transition temperature ΔT _c (P), in the critical magnetic field ΔH _c (P), in the thermopower α / T (T ²), and in electrical resistivity ρ(T) (P is pressure) of Mo_1?x -Re _x alloys are observed at low temperatures against the background of specific features related to an electronic-topological transition (ETT) in these alloys. The oscillations are sensitive to the impurity concentration: they increase when the Re impurity concentration is close to the critical concentration C _c at which the ETT occurs. Oscillations are also detected in the concentration dependences of the temperature coefficient of resistivity (?ρ / ?T (C)) and the thermopower derivative (?(α/T) / ?T ² (C)) of Mo_1?x -Re _x alloys at low temperatures. The former and latter oscillations are shown to correlate with each other. These specific features are assumed to result from the ETT and to be related to the localization of the part of the electrons that fill a new cavity in the Fermi surface during this transition.     

Scattering of Josephson plasmons on random quantum jumpers in a disordered <Emphasis Type="Italic">I</Emphasis>-layer of an <Emphasis Type="Italic">S</Emphasis>–<Emphasis Type="Italic">I</Emphasis>–<Emphasis Type="Italic">S</Emphasis> junction

A formula for the relaxation time of Josephson plasmons on random quantum jumpers, i.e., quantum resonant-percolation trajectories (QRPT) in a disordered I-layer of a tunnel S–I–S junction is derived. Domain Ω_r (μ ? E₀, c), in which the strongest plasmon damping takes place, is plotted in the plane of parameters (μ ? E₀, c).     

One-electron spin-dependent transport in split-gate structures containing self-organized InAs quantum dots

The paper presents the results obtained in a study of electron transport in split-gate structures prepared from heterostructures with self-organizing InAs quantum dots situated close to a two-dimensional electron gas. Coulomb oscillations of current through InAs quantum dots depending on the voltage on the gate were observed. Coulomb current oscillations persisted up to about 20 K. The Coulomb energy ΔE _C = 12.5 meV corresponding to theoretical estimates for the p-states of quantum dots in our structures was determined.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

Microwave photoresistance of a two-dimensional electron gas in a ballistic microbar

The effect of millimeter microwave radiation on the electron transport of two-dimensional (2D) ballistic microbars formed on the basis of individual GaAs quantum wells at a temperature of T = 4.2 K in magnetic fields B < 0.6 T has been investigated. Differences have been revealed in the magnetic field dependences of the microwave photoresistance of a 2D electron gas in Hall bars with a length L and a width W for the cases L, W > l _p and L, W < l _p , where l _p is the electron mean free path for momentum. The microwave photoresistance in macroscopic bars (L, W > l _p ) is a periodic alternating function of the inverse magnetic field; in microbars (L, W < l _p ), it is a periodic positive function of 1/B. The experimental results indicate that the mechanisms of the microwave photoresistance of a 2D electron gas are different for macroscopic and microscopic bars.     

Hall coefficient in heavy fermion metals

Experimental studies of the antiferromagnetic (AF) heavy fermion metal YbRh₂Si₂ in a magnetic field B indicate the presence of a jump in the Hall coefficient at a magnetic-field tuned quantum state in the zero temperature limit. This quantum state occurs at B ≥ B_c0 and induces the jump even though the change of the magnetic field at B = B_c0 is infinitesimal. We investigated this by using the model of heavy electron liquid with the fermion condensate. Within this model, the jump takes place when the magnetic field reaches the critical value B_c0 at which the ordering temperature T_N(B = B_c0) of the AF transition vanishes. We show that at B → B_c0, this second order AF phase transition becomes the first order one, making the corresponding quantum and thermal critical fluctuations vanish at the jump. At T → 0 and B = B_c0 the Grüneisen ratio as a function of the temperature T diverges. We demonstrate that both the divergence and the jump are determined by the specific low temperature behavior of the entropy \(S(T) \propto S_0 + a\sqrt T + bT\) with S₀; a and b are temperature independent constants.     

Coulomb deexcitation of muonic hydrogen within the quantum close-coupling method

The Coulomb deexcitation of muonic hydrogen in collisions with the hydrogen atom has been studied in the framework of the fully quantum-mechanical close-coupling method for the first time. The calculations of the l-averaged cross sections of the Coulomb deexcitation are performed for (μp)_n and (μd)_n atoms in the initial states with the principal quantum number n = 3–9 and at relative energies E = 0.1–100 eV. The obtained results for the n and E dependences of the Coulomb deexcitation cross sections drastically differ from the semiclassical results. An important contribution of the transitions with Δn > 1 to the total Coulomb deexcitation cross sections (up to ～37%) is predicted.     

Critical phenomena in the β-(2×4) → α-(2×4) reconstruction transition on the (001) GaAs surface

The critical exponents of the β-(2×4) → α-(2×4) reconstruction phase transition on the (001) GaAs surface are determined experimentally. It is found that the phase transition is analogous to a van der Waals transition. The critical parameters T _c , P _c , and Θ_c have been measured experimentally. The mean field theory is applied, and three-parameter isotherms are obtained that agree with the experimental results at the following values of the parameters: E_st = 0.36 eV, ΔE = 0.18 eV, and E _i = 0.134 eV. Precision measurements of the critical exponents β and δ are carried out. Their values β = 1/8 and δ = 15 indicate that the phase transition is truly two-dimensional.     

The real solution to scalar field equation in 5D black string space

After the nontrivial quantum parameters Ω _n and quantum potentials V _n obtained in our previous research, the circumstance of a real scalar wave in the bulk is studied with the similar method of Brevik and Simonsen (Gen. Rel. Grav. 33:1839, 2001). The equation of a massless scalar field is solved numerically under the boundary conditions near the inner horizon r _e and the outer horizon r _c . Unlike the usual wave function Ψ_ωl in 4D, quantum number n introduces a new functions Ψ_{ωl n} , whose potentials are higher and wider with bigger n. Using the tangent approximation, a full boundary value problem about the Schrödinger-like equation is solved. With a convenient replacement of the 5D continuous potential by square barrier, the reflection and transmission coefficients are obtained. If extra dimension does exist and is visible at the neighborhood of black holes, the unique wave function Ψ_{ωl n} may say something to it.     

Almost mobility edges and the existence of critical regions in one-dimensional quasiperiodic lattices

We study a one-dimensional quasiperiodic system described by the Aubry–André model in the small wave vector limit and demonstrate the existence of almost mobility edges and critical regions in the system. It is well known that the eigenstates of the Aubry–André model are either extended or localized depending on the strength of incommensurate potential V being less or bigger than a critical value V _c , and thus no mobility edge exists. However, it was shown in a recent work that for the system with V < V _c and the wave vector α of the incommensurate potential is small, there exist almost mobility edges at the energy E _c±, which separate the robustly delocalized states from “almost localized” states. We find that, besides E _c±, there exist additionally another energy edges E _c′±, at which abrupt change of inverse participation ratio (IPR) occurs. By using the IPR and carrying out multifractal analyses, we identify the existence of critical regions among |E _c±|?≤?|E|?≤?|E _c′±| with the mobility edges E _c± and E _c′± separating the critical region from the extended and localized regions, respectively. We also study the system with V > V _c , for which all eigenstates are localized states, but can be divided into extended, critical and localized states in their dual space by utilizing the self-duality property of the Aubry–André model.     

The Coherence Time of Infinite Quantum Well

The relationship among the Coherence time (CT) τ, the Variation frequency λ, the energy separation ΔE and coupling constant α in quantum well was investigated using Pekar type variational method. The results indicated that the Coherence time τ is positively proportional to the Variation frequency λ, but the energy separation ΔE and coupling constant α are negatively correlated with the Coherence time τ. When ΔE is more than 10ev, and when α is more than 5, τ decreases sharply.     

Critical magnetic field of the vortex-free state in NbC thin films and prospects for its observation in MgB<Subscript>2</Subscript>

The critical magnetic fields H _c‖ and H _c2 are measured for thin films of the isotropic superconductor NbC. It is revealed that the critical fields exhibit strong anisotropy due to the vortex-free state of the film in a magnetic field aligned parallel to its surface. The H _c‖/H _c2 ratio at 2 K exceeds 6 and increases with increasing temperature. The dependence H _c‖(T) agrees quantitatively with the concepts of microscopic theory on the vortex-free state of a thin film of a clean superconductor in the temperature range below T _c . As the electron mean free path decreases under irradiation of the film with a low dose of He⁺ ions, the critical field H _c‖ remains unchanged near T _c but increases significantly at lower temperatures. The well-known theoretical models are used to estimate the electronic parameters and thicknesses of MgB₂ films for which the specific features associated with the vortex-free state of the two-gap superconductor can manifest themselves in the temperature dependence of the critical magnetic field H _c‖(T).     

Entanglement in Mixed-Spin (1/2, 3/2) Heisenberg XXZ Model with Dzyaloshinskii-Moriya Interaction

In this paper, the entanglement in a mixed-spin (1/2, 3/2) Heisenberg XXZ model with Dzyaloshinskii-Moriya (DM) interaction in an inhomogeneous external magnetic field is studied. We not only calculate the ground-state entanglement but also investigate the behaviors of quantum phase transition following the changes of DM interaction and nonuniform magnetic field. More importantly, we note that the DM interaction improves the critical magnetic field B _c , the critical temperature T _c and broadens the region of entanglement.     

Magnetization and Static Magnetic Susceptibility of Fine-Crystalline High-Temperature YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> Superconductors Synthesized by the Sol–Gel Method

A comparative study of the magnetization and static magnetic susceptibility of high-temperature superconductors (HTSC) YBa₂Cu₃O_y synthesized by two variants of the sol–gel method with different average sizes of crystallites 〈 D〉 ranging 0.4–2 μm has been performed in constant magnetic fields (Н ≤ 6 kOe). It has been shown that the different annealing temperatures and times, at which their crystal structure is formed, change both the average sizes of crystallites 〈D〉 and the sizes of the structural homogeneity regions 〈l〉 and, at the same time, the magnetic field penetration depth (λ) and the coherence length (ξ). As a result, such parameters as 〈D〉 ~ λ and 〈l〉 ~ ξ become comparable, leading to a change in the physical characteristics of HTSCs. It has also been shown that the superconducting transition temperature T_c determined from the measurements of magnetic characteristics in constant magnetic fields remains within values optimal for superconductivity (T_c ≈ 92 K) in the case of an optimal number (y) of oxygen atoms, which determine the levels of charge doping for a given compound.     

Giant fluctuations of radiation intensity of two-dimensional electrons in double quantum wells

Giant fluctuations of the recombination-radiation intensity of two-dimensional electrons were studied in double quantum wells with different well and barrier widths in the regime of the integer quantum Hall effect. It was found that the giant fluctuations of photoluminescence intensity in double quantum wells with a narrow barrier (l<150 Å) occur in a narrow magnetic-field interval, where the sum of electron concentrations in both wells corresponds to the integer filling factors 4, 8, and 12. It was established that, under these conditions, the coefficient C₁₂ of correlation between the radiation intensities from different wells is close to unity. It is shown that, as the barrier width increases (l>200 Å), the coefficient C₁₂ decreases, changes sign, and goes to zero at l=400 Å.