Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer

The results of studying the electrophysical characteristics and structural parameters of metamorphic In_0.7Al_0.3As/In_0.7Ga_0.3As/In_0.7Al_0.3As HEMT nanoheterostructures epitaxially grown on GaAs (100) substrates have been presented. A linear metamorphic buffer with inserted unbalanced superlattices characterized by different numbers of periods is used. Transmission electron microscopy has shown that an increase in the number of superlattice periods from 5 to 30 promotes the improvement of the crystal structure. In this case, the electrophysical parameters of metamorphic HEMT nanoheterostructures are also significantly improved.     

Structural and electrophysical analysis of MHEMT In0.70Al0.30As/In0.75Ga0.25As nanoheterostructures with different strain distributions in metamorphic buffer

A complex structural and electrophysical analysis of MHEMT In_0.70Al_0.30As/In_0.75Ga_0.25As nanoheterostructures grown on (100)GaAs substrates using two radically new designs of metamorphic buffer (providing different internal-strain distributions) has been performed. The lattice parameters of the constant-composition layers entering the metamorphic buffer have been determined by X-ray diffraction using symmetric and asymmetric (400) and (422) reflections. It is shown that, having chosen a proper design of metamorphic buffer in nanoheterostructures on GaAs substrates, it is possible to obtain electron mobility and concentration comparable with those for nanoheterostructures on InP substrates. The compositions of smoothing layers, determined from the peaks on rocking curves, are found agree well with the process values.     

Electrical Properties of Praseodymium-doped GaAs and Al0.3Ga0.7As Epilayers

Praseodymium-doped GaAs and Al_0.3Ga_0.7As epilayers grown on Semi-Insulating (SI) GaAs substrates by Liquid Phase Epitaxy (LPE) were first studied in this present work. Measurement techniques, such as microscopic observation, X-ray diffraction, Secondary Ion Mass Spectroscopy (SIMS), and Hall measurement were employed. Layers doped with Pr resulted in a mirror-like surface, except several high Pr-doped layers having droplet surfaces. Hall measurements reveal that the grown layers contained p-type layers, carrier concentrations from 6.3 × 10¹⁵ to 1.2 × 10¹⁶ cm⁻³, and from 6.3 × 10¹⁵ to 3.5 × 10¹⁶ cm⁻³ for Pr-doped GaAs and Al_0.3Ga_0.7As epilayers, respectively. Although p-type conduction exists, in the light of electrical features, doping of Pr into the GaAs and Al_0.3Ga_0.7As growth melts, is still considered to exhibit gettering properties rather than to become a new acceptor itself. Additional photoluminescence examinations were taken. Their results also indicate that Pr-doped layers produce no new emission lines and support the electrical observations.     

Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination

Crystallographic tilt and Surface topography of InGaAs and InAlAs based metamorphic buffer structures on GaAs (001) substrate grown by molecular beam epitaxy (MBE) under varying growth conditions have been investigated. Compressively strained metamorphic buffer layers show anisotropic strain relaxation. A novel tilt determination technique based on X‐ray diffraction has been developed which can separate the effect of anisotropic strain. Tilt has been found to depend on compositional grading scheme, growth temperature and surface irregularities. Samples having random surfaces show smaller tilt than that of samples showing regular cross‐hatch. At higher growth temperature, reduction of tilt has been observed and correlated with thermal activation of otherwise inactive slip systems at low temperature. At low temperature and also for continuously graded samples, reduction of tilt has been observed and correlated with the slower relaxation that provide the opportunity for all the slip systems to participate and compete.     

Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice-matched to (001) InP Substrates

This paper presents the saturation behaviour of In – Ga – As melts with monocrystalline GaAs. The coulometric As-analysis confirmed that the source-seed-technique produces In – Ga – As melts of defined compositions. The growth results of the step cooling technique applying both the source-seed technique and the single phase melts are compared.     

Aspects of low heterostructure symmetry in (311)A (In,Ga)As/GaAs

We investigate the structural and optical properties of (In,Ga)As/GaAs heterostructures induced by the low symmetry of the [311]A orientation. High-resolution X-ray diffraction (HRDXD) measurements reveal the existence of a shear-strained unit cell. The onset of relaxation in heavily strained structures leads to pronounced anisotropies and to satellite splittings in the X-ray diffraction patterns. Optical investigations indicate that the impact of the piezoelectric fields on the ground state energy is compensated for by In segregation. Nevertheless these fields cause a pronounced reduction of the excitonic binding energy in the (311)A structures.     

Electrical and structural properties of annealed AsTe and AsTeI semiconducting glasses: surface and bulk effects

The effects of thermal annealing, above the glass transition temperature, on the electrical conductivity and structural properties of bulk As₅₀Te_50?xI_x (x = 0, 2, 5, 20) glasses have been studied. Upon devitrification, an electrically conductive layer is formed on the sample surface The conductivity of the surface layer is nearly temperature independent and has an activation energy of ≈10^?2 eV. X-ray diffraction experiments show that an fcc crystalline phase is associated with the surface layer. Helium ion backscattering experiments indicate that on a sample with a surface layer the average atomic composition does not change significantly with depth (probed to a depth of ≈2 μm) and is approximately the same as that of the as-prepared material. Results suggest that the conductive regions may be composed of a matrix of interconnected crystallites (fcc phase) with interdispersed non-crystalline material. As annealing progresses, crystallization extends throughout the bulk material with a corresponding increase in sample conductance. The electrical changes are considerably more pronounced in the x = 0 and x = 2 compositions. The degree of crystallization and the crystalline phases induced in the bulk material by annealing were determined using differential scanning calorimetry (DSC) and X-ray diffraction. These experiments show that following the anneal series (130, 155, 170, and 190°C; each for 5 in vacuum) the more conductive (x = 0 and 2) samples contain monoclinic As₂Te₃, whereas the fcc phase is observed in the x = 5 and 20 samples. Results also suggest that the first crystallization exotherm, T_X1, observed in the DSC data is associated with the formation of the fcc phase, whereas the second crystallization exotherm, T_X2, is associated with the conversion of the fcc phase to the high-temperature stable monoclinic As₂Te₃ phase. From all of these results a model is formulated for the amorphous-to-crystalline transformation and its effects on electrical transport in these semiconducting alloys.     

n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究

采用双光路双靶材脉冲激光沉积(PLD)系统在p-Si衬底上外延生长InGaN薄膜,研究了InGaN薄膜的显微组织结构和n-InGaN/p-Si异质结的电学性能.研究表明,InGaN薄膜为单晶结构,沿[0001]方向择优生长,薄膜表面光滑致密,In的原子含量为35％.霍尔(Hall)效应测试表明In0.35Ga0.65N...     

Gettering Properties of Praseodymium in GaAs,In0.53Ga0.47As,and InP Grown by Liquid Phase Epitaxy

The incorporation of praseodymium (Pr) into GaAs, In_0.53Ga_0.47As, and InP during liquid-phase epitaxy were investigated by double crystal x-ray diffraction, Hall effect, low temperature photoluminescence (PL) measurements. The lattice mismatch slightly vary with Pr concentration in the growth melts. Examinations of the electrical property illustrate that the lower carriers concentrations and a higher mobilities are obtain from Pr-doped epilayers than undoped sample (In_0.53Ga_0.47As and InP). The PL spectra (15-K) show that the intensity of the impurity related peaks decreases and the near-band-to-band luminescence intensity increase. They also reveal that the impurities are gettered by Pr ions during LPE growth. Thus, for the purpose of purification, proper amount of Pr in the growth melts is suggested. No intra-4f-shell transition line is observed from the Pr-doped GaAs, In_0.53Ga_0.47As, and InP layers.     

Structural and Electrical Characterization of Ag3Ga5Te9 and Ag3In5Se9 Crystals

X-ray powder diffraction studies revealed that Ag₃Ga₅Te₉ and Ag₃In₅Se₉ crystallize in orthorhombic and tetragonal systems, respectively. The temperature dependent conductivity and Hall effect measurements have been carried out between 65—480 K. Ag₃Ga₅Te₉ exhibits p-type conduction with a room temperature conductivity of 4.3 × 10^—4 (Ω · cm)^—1 and mobility less than 1 cm²/V · s. Ag₃In₅Se₉ was identified to be n-type with room temperature conductivity 7.2 × 10^—5 (Ω · cm)^—1 and mobility 20 cm²/V · s. From temperature dependence of the conductivity three different impurity ionization energies were obtained for both compounds. The anomalous behavior observed in the temperature dependence of mobility was attributed to the different features of the microstructure.     

N-type doping of GaN/Si(1 1 1) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice

The characteristics of Si-doped and undoped GaN/Si(1 1 1) heteroepitaxy with composite buffer layer (CBL) and superlattice are compared and discussed. While as-grown Si-doped GaN/Si(1 1 1) heteroepitaxy shows lower quality compared to undoped GaN, crack-free n-type and undoped GaN with the thickness of 1200 nm were obtained by metalorganic chemical vapor deposition (MOCVD). In order to achieve the crack-free GaN on Si(1 1 1), we have introduced the scheme of multiple buffer layers; composite buffer layer of Al_0.2Ga_0.8N/AlN and superlattice of Al_0.2Ga_0.8N/GaN on 2-in. Si(1 1 1) substrate, simultaneously. The FWHM values of the double-crystal X-ray diffractometry (DCXRD) rocking curves were 823 arcsec and 745 arcsec for n-GaN and undoped GaN/Si(1 1 1) heteroepitaxy, respectively. The average dislocation density on GaN surface was measured as 3.85×10⁹ and 1.32×10⁹ cm⁻² for n-GaN and undoped GaN epitaxy by 2-D images of atomic force microscopy (AFM). Point analysis of photoluminescence (PL) spectra was performed for evaluating the optical properties of the GaN epitaxy. We also implemented PL mapping, which showed the distribution of edge emission peaks onto the 2 inch whole Si(1 1 1) wafers. The average FWHMs of the band edge emission peak was 367.1 and 367.0 nm related with 3.377 and 3.378 eV, respectively, using 325 nm He-Cd laser as an excitation source under room temperature.     

Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth (Ga,In)(As,P)/GaAs

The luminescence properties of In_1−xGa_xAs_yP_1−y layers and heterostructures grown lattice matched to GaAs by metalorganic vapour-phase epitaxy (MOVPE) were studied and correlated to the crystalline properties. For laser structures emitting around 800 nm a red-shift of the emission from the active layer (y = 0.72) grown at 680°C together with an anomalous temperature behaviour and excitation dependence of the bandgap is observed. Although some degree of ordering is observed for thick layers of this composition, polarization dependent photoluminescence does not indicate ordering of the quantum well to be the main reason for this excitation dependence. Instead, interfacial In-rich layers are found to be responsible. The thickness of these interfacial layers strongly depends on substrate misorientation and growth conditions.     

Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer

The structure and optical properties of In(Ga)As grown with the introduction of InGaAlAs or InAlAs seed dots layers are investigated. The area density and size homogeneity of the upper InGaAs dots are efficiently improved with the introduction of a layer of high-density buried dots. When the GaAs spacer layer is too thin to cover the seed dots, the upper dots exhibit the characterization of a quantum well. By analyzing the growth dynamics, we refer to it as an empty-core structure dot.     

Comparative crystal habit study of quartz and MPO4 isomorphous compounds (M = Al,Ga)

Comparative investigation of the crystal habit of -quartz and two quartz-like materials (AlPO₄ and GaPO₄) has been undertaken on the basis of the Bravais-Friedel-Donnay-Harker (BFDH) law and the Hartman-Perdock (PBCs) theory. Unlike to these predictions, very strong morphological differences are observed. The crystal habit changes can be expressed in terms of crystal structure distortions and extrinsic parameters such as: temperature, pressure, solvent and impurities of the crystal growth experiments. All these parameters are not independent from one another, so only a qualitative explanation can be given.     

X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer

Crystallography Reports - Epitaxial In0.53Ga0.47As films, grown on GaAs substrates with the (100) and (111)А crystallographic orientations in the standard high-temperature and low-temperature...     

Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis

This study investigated the effect of the substrate temperature on the structural, optical, morphological, and electrical properties of undoped SnO₂ films prepared by a spray deposition method. The films were deposited at various substrate temperatures ranging from 300-500 °C in steps of 50 °C and characterized by different optical and structural techniques. X-ray diffraction studies showed that the crystallite size and preferential growth directions of the films were dependent on the substrate temperature. These studies also indicated that the films were amorphous at 300 °C and polycrystalline at the other substrate temperatures used. Infrared and visible spectroscopic studies revealed that a strong vibration band, characteristic of the SnO₂ stretching mode, was present around 630 cm⁻¹ and that the optical transmittance in the visible region varied over the range 75-95% with substrate temperature, respectively. The films deposited at 400 °C exhibited the highest electrical conductivity property.     

Formation and structural characteristics of Pd–Ag/SiO2 and Pd–Cu/SiO2 catalysts synthesized by cogelation

Pd–Ag/SiO₂ and Pd–Cu/SiO₂ xerogel catalysts have been synthesized by cogelation of tetraethoxysilane (TEOS) and chelates of either Pd and Ag or Pd and Cu with 3-(2-aminoethylamino)propyltrimethoxysilane (EDAS). After an extensive study of the influences of synthesis operating variables over structural characteristics of gels, highly dispersed bimetallic Pd–Ag/SiO₂ and Pd–Cu/SiO₂ xerogel catalysts were obtained. These samples are then composed of completely accessible Pd–Ag and Pd–Cu alloy crystallites with sizes of 2–3.5 nm located inside silica particles exhibiting a monodisperse microporous distribution. It appears also that the metal complex acts as a nucleation agent in the formation of silica particles.     

Growth, refined structural and spectroscopic characteristics of Tm-doped NaGd(WO4)2 single crystals

The details of Tm³⁺-doped NaGd(WO₄)₂ single-crystal growth are discussed, the results of precise investigations of its structural and spectroscopic characteristics, as well as the analysis of cross-relaxation process of Tm³⁺ ions (³H₄→³F₄, ³H₆→³F₄) in this crystal are presented. Based on the Judd–Ofelt theory, three intensity parameters, spontaneous emission probabilities, fluorescence branching ratios and fluorescence quantum efficiency from ³H₄ and ³F₄ levels were refined.     

Study of the structural insertion of Al in the Al2O3-SiO2 and Nd2O3-Al2O3-SiO2 glass systems

Glasses in the Al₂O₃-SiO₂ and Nd₂O₃-Al₂O₃-SiO₂ systems were prepared by the sol-gel method. The gel-glass evolution was studied using near-infrared (NIR) and ultraviolet-visible (UV-VIS) spectrophotometry, X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier infrared spectroscopy (FTIR) and nuclear magnetic resonance spectroscopy (NMR). The results obtained indicate a relationship between the sample compositions, the treatment temperature and the Al coordination. In the samples of the Nd₂O₃-Al₂O₃-SiO₂ system the densification of the structure, when the treatment temperature increases, leads to the segregation of neodymium oxide particles.