A Fast Deposition‐Crystallization Procedure for Highly Efficient Lead Iodide Perovskite Thin‐Film Solar Cells

Thin‐film photovoltaics based on alkylammonium lead iodide perovskite light absorbers have recently emerged as a promising low‐cost solar energy harvesting technology. To date, the perovskite layer in these efficient solar cells has generally been fabricated by either vapor deposition or a two‐step sequential deposition process. We report that flat, uniform thin films of this material can be deposited by a one‐step, solvent‐induced, fast crystallization method involving spin‐coating of a DMF solution of CH₃NH₃PbI₃ followed immediately by exposure to chlorobenzene to induce crystallization. Analysis of the devices and films revealed that the perovskite films consist of large crystalline grains with sizes up to microns. Planar heterojunction solar cells constructed with these solution‐processed thin films yielded an average power conversion efficiency of 13.9±0.7 % and a steady state efficiency of 13 % under standard AM 1.5 conditions.     

Photocurrent Enhancement of Dye‐Sensitized Solar Cells owing to Increased Dye‐Adsorption onto Silicon‐Nanoparticle‐Coated Titanium‐Dioxide Films

The inverse‐micellar preparation of Si nanoparticles (Nps) was improved by utilizing sodium naphthalide. The Si Nps were subsequently functionalized with 4‐vinylbenzoic acid for their attachment onto TiO₂ films of dye‐sensitized solar cells (DSSCs). The average diameter of the COOH‐functionalized Si (Si? COOH) Nps was 4.6(±1.7) nm. Depth profiling by secondary‐ion mass spectrometry revealed that the Si Nps were uniformly attached onto the TiO₂ films. The number of Ru^II dye molecules adsorbed onto a TiO₂ film that was treated with the Si? COOH Nps was 42 % higher than that on the untreated TiO₂ film. As a result, DSSCs that incorporated the Si? COOH Nps exhibited higher short‐circuit photocurrent density and an overall energy‐conversion efficiency than the untreated DSSCs by 22 % and 27 %, respectively. This enhanced performance, mostly owing to the intramolecular charge‐transfer to TiO₂ from the dye molecules that were anchored to the Si? COOH Nps, was confirmed by comparing the performance with two different Ru^II–bipyridine dyes (N719 and N749).     

A Cation‐Exchange Approach for the Fabrication of Efficient Methylammonium Tin Iodide Perovskite Solar Cells

Tin‐based halide perovskite materials have been successfully employed in lead‐free perovskite solar cells, but the overall power conversion efficiencies (PCEs) have been limited by the high carrier concentration from the facile oxidation of Sn²⁺ to Sn⁴⁺. Now a chemical route is developed for fabrication of high‐quality methylammonium tin iodide perovskite (MASnI₃) films: hydrazinium tin iodide (HASnI₃) perovskite film is first solution‐deposited using presursors hydrazinium iodide (HAI) and tin iodide (SnI₂), and then transformed into MASnI₃ via a cation displacement approach. With the two‐step process, a dense and uniform MASnI₃ film is obtained with large grain sizes and high crystallization. Detrimental oxidation is suppressed by the hydrazine released from the film during the transformation. With the MASnI₃ as light harvester, mesoporous perovskite solar cells were prepared, and a maximum power conversion efficiency (PCE) of 7.13 % is delivered with good reproducibility.     

Fast and Simple Preparation of Iron‐Based Thin Films as Highly Efficient Water‐Oxidation Catalysts in Neutral Aqueous Solution

Water oxidation is the key step in natural and artificial photosynthesis for solar‐energy conversion. As this process is thermodynamically unfavorable and is challenging from a kinetic point of view, the development of highly efficient catalysts with low energy cost is a subject of fundamental significance. Herein, we report on iron‐based films as highly efficient water‐oxidation catalysts. The films can be quickly deposited onto electrodes from Fe^II ions in acetate buffer at pH 7.0 by simple cyclic voltammetry. The extremely low iron loading on the electrodes is critical for improved atom efficiency for catalysis. Our results showed that this film could catalyze water oxidation in neutral phosphate solution with a turnover frequency (TOF) of 756 h^?1 at an applied overpotential of 530 mV. The significance of this approach includes the use of earth‐abundant iron, the fast and simple method for catalyst preparation, the low catalyst loading, and the large TOF for O₂ evolution in neutral aqueous media.     

Highly Catalytic Carbon Nanotube/Pt Nanohybrid‐Based Transparent Counter Electrode for Efficient Dye‐Sensitized Solar Cells

Low‐cost transparent counter electrodes (CEs) for efficient dye‐sensitized solar cells (DSSCs) are prepared by using nanohybrids of carbon nanotube (CNT)‐supported platinum nanoparticles as highly active catalysts. The nanohybrids, synthesized by an ionic‐liquid‐assisted sonochemical method, are directly deposited on either rigid glass or flexible plastic substrates by a facile electrospray method for operation as CEs. Their electrochemical performances are examined by cyclic voltammetry, current density–voltage characteristics, and electrochemical impedance spectroscopy (EIS) measurements. The CNT/Pt hybrid films exhibit high electrocatalytic activity for I^?/I₃^? with a weak dependence on film thickness. A transparent CNT/Pt hybrid CE film about 100 nm thick with a transparency of about 70 % (at 550 nm) can result in a high power conversion efficiency (η) of over 8.5 %, which is comparable to that of pyrolysis platinum‐based DSSCs, but lower cost. Furthermore, DSSC based on flexible CNT/Pt hybrid CE using indium‐doped tin oxide‐coated polyethylene terephthalate as the substrate also exhibits η=8.43 % with J_sc=16.85 mA cm^?2, V_oc=780 mV, and FF=0.64, and this shows great potential in developing highly efficient flexible DSSCs.     

Free‐Standing Conducting Polymer Films for High‐Performance Energy Devices

Thick, uniform, easily processed, highly conductive polymer films are desirable as electrodes for solar cells as well as polymer capacitors. Here, a novel scalable strategy is developed to prepare highly conductive thick poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (HCT‐PEDOT:PSS) films with layered structure that display a conductivity of 1400 S cm^?1 and a low sheet resistance of 0.59 ohm sq^?1. Organic solar cells with laminated HCT‐PEDOT:PSS exhibit a performance comparable to the reference devices with vacuum‐deposited Ag top electrodes. More importantly, the HCT‐PEDOT:PSS film delivers a specific capacitance of 120 F g^?1 at a current density of 0.4 A g^?1. All‐solid‐state flexible symmetric supercapacitors with the HCT‐PEDOT:PSS films display a high volumetric energy density of 6.80 mWh cm^?3 at a power density of 100 mW cm^?3 and 3.15 mWh cm^?3 at a very high power density of 16160 mW cm^?3 that outperforms previous reported solid‐state supercapacitors based on PEDOT materials.     

Fast,Direct, Low‐Cost Route to Scalable,Conductive, and Multipurpose Poly(3,4‐ethylenedixoythiophene)‐Coated Plastic Electrodes

Poly(3,4‐ethylenedioxythiophene) (PEDOT) films are deposited, using an electroless method, onto flexible plastic poly(ethylene terephthalate) (PET) substrates of approximately 20×6 cm². The sheet resistance of a PEDOT–PET film is approximately 600 Ω per square, and the nanoscale conductivity is 0.103 S cm^?1. A plastic electrochromic PEDOT–Prussian blue device is constructed. The device undergoes a color change of pale blue to deep violet–blue reversibly over 1000 cycles, thus demonstrating its use as a light‐modulating smart window. The PEDOT–PET film is also used in a quantum dot solar cell, and the resulting photoelectrochemical performance and work function indicate that it is also promising for photovoltaic cells. The high homogeneity of the PEDOT deposit on PET, the optimal balance between conductivity and optical transparency, and the demonstration of its use in an electro‐optical device and a solar cell, offer the opportunity to use this electrode material in a variety of low‐cost optoelectronic devices.     

Heterostructure of Si and CoSe2: A Promising Photocathode Based on a Non‐noble Metal Catalyst for Photoelectrochemical Hydrogen Evolution

Development of a solar water splitting device requires design of a low‐cost, efficient, and non‐noble metal compound as alternative to noble metals. For the first time, we showed that CoSe₂ can function as co‐catalyst in phototoelectrochemical hydrogen production. We designed a heterostructure of p‐Si and marcasite‐type CoSe₂ for solar‐driven hydrogen production. CoSe₂ successively coupled with p‐Si can act as a superior photocathode in the solar‐driven water splitting reaction. Photocurrents up to 9 mA cm^?2 were achieved at 0 V vs. reversible hydrogen electrode. Electrochemical impedance spectroscopy showed that the high photocurrents can be attributed to low charge transfer resistance between the Si and CoSe₂ interfaces and that between the CoSe₂ and electrolyte interfaces. Our results suggest that this CoSe₂ is a promising alternative co‐catalyst for hydrogen evolution.     

Synthesis,Characterization, Thermal Property of Si(c‐C5H9NH)4 and Its Potential as CVD Precursor for SiC Film

Silicon(IV) amide Si(c‐C₅H₉NH)₄ ( 1 ), was synthesized and characterized by ¹H, ¹³C, and ²⁹Si NMR spectroscopy, EI‐MS, elemental analysis, and X‐ray diffraction. Its thermal stability and volatility were also investigated. The as‐grown film, which was characterized by SEM, AFM, XRD and XPS, was deposited using 1 as single precursor through a low‐pressure chemical vapor deposition (LPCVD) process at a temperature as low as 600 °C. The results demonstrated that silicon(IV) amides can be promising single‐precursor for deposition of low‐temperature SiC films.     

Electrical,optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

We present a study of electrical and optical properties of nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type thin films were a relative partial pressure between 7% and 11% (N₂ and/or O₂), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X‐ray diffraction results showed that the as‐deposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X‐ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p‐type carriers between 10¹⁸ and 10¹⁹ cm^?3, and a Hall mobility between 0.1 and 1.94 cm²V^?1s^?1. These thin films were used to fabricate p‐type thin film transistors.     

Charge referencing issues in XPS of insulators as evidenced in the case of Al‐Si‐N thin films

Accurate charge referencing in XPS of insulating specimens is a delicate issue. This difficulty is illustrated in the case of Al‐Si‐N composite thin films deposited by reactive magnetron sputtering with variable composition from pure aluminum nitride to pure silicon nitride. The samples were mounted with Au‐coated metallic clamps. Argon sputter cleaning was required to remove a surface native oxide before analysis. For charge referencing implanted argon atoms from the sputter gas and a small amount of gold re‐deposited from the metallic clamps onto the specimen surface during sputter cleaning were evaluated. For the argon atoms, a surprisingly large chemical shift (～1 eV) and a significant peak broadening (0.6 eV) of the Ar 2p_3/2 photoelectron line were found with varying the Si content of the films. This could be related to chemical and structural changes of the Al‐Si‐N films. Hence implanted argon could not be used for charge referencing of Al‐Si‐N samples. In contrast to the implanted argon, the Au 4f_7/2 line width of the gold re‐deposited onto the sample surface did not depend on the Si content of Al‐Si‐N films. A constant energy shift (～1.2 eV) of the Au 4f_7/2 line as compared with bulk gold was, however, found, which was related to the size of gold particles formed on the insulating films. Therefore gold could be reliably used to study chemical shifts of sample‐relevant species in Al‐Si‐N films, but the absolute binding energies of Al 2p, Si 2p and N 1s photoelectrons could not be determined. Copyright © 2011 John Wiley & Sons, Ltd.     

Effect of Platinum and Ruthenium Incorporation on Voltammetric Behavior of Nitrogen Doped Diamond‐Like Carbon Thin Films

Nitrogen doped diamond‐like carbon thin films with or without platinum and ruthenium incorporation (N‐DLC or PtRuN‐DLC) were deposited on highly conductive p‐Si substrates by DC magnetron sputtering to study the effect of Pt and Ru doping on the voltammetric performance of the N‐DLC films. The potential windows of these film electrodes were measured in different electrolytic solutions, such as H₂SO₄, HCl and KCl. The cyclic voltammograms obtained from the N‐DLC film electrodes in these solutions showed wide potential windows while the introduction of Pt and Ru into the film electrodes apparently narrowed down the potential windows due to their catalytic activities.     

Electrochemical Production of Si without Generation of CO2 Based on the Use of a Dimensionally Stable Anode in Molten CaCl2

The current Si production process is based on the high‐temperature (1700 °C) reduction of SiO₂ with carbon that produces large amounts of CO₂. We report an alternative low‐temperature (850 °C) process based on the reduction of SiO₂ in molten CaCl₂ that does not produce CO₂. It utilizes an anode material (Ti₄O₇) capable of sustained oxygen evolution. Two types of this anode material, dense Ti₄O₇ and porous Ti₄O₇, were tested. The dense anode showed a better performance. The anode stability is attributed to the formation of a protective TiO₂ layer on its surface. In situ periodic current reversal and ex situ H₂ reduction could be used for extending the lifetime of the anodes. The findings show that this material can be applied as a recyclable anode in molten CaCl₂. Si wires, films, and particles were deposited with this anode under different cathodic current densities. The prepared Si film exhibited ≈30–40 % of the photocurrent response of a commercial p‐type Si wafer, indicating potential use in photovoltaic cells.     

Thickness and temperature‐dependent study of Co/Si interface

Thin films of cobalt (10, 40, and 100 nm) are deposited on Si substrate by electron beam physical vapor deposition technique. After deposition, 4 pieces from each of the wafers of silicon substrate were cut and annealed at a temperature of 200°C, 300°C, and 400°C for 2 hours each, separately. X‐ray diffraction, atomic force microscopy, and transmission electron microscopy (TEM) are used to study the structural and morphological characteristics of the deposited films. To obtain TEM images, Co films are deposited on Cu grids; so far, no such types of TEM images of Co films are reported. Structural studies confirm nanocrystalline nature with hexagonal close packed structure of the deposited Co film at lower thickness, while at higher thickness, film structure transforms to amorphous with lower surface roughness value. The particle sizes in all the cases are in the range of 3 to 5 nm. Micro‐Raman spectroscopy is also used to study the phase formation and chemical composition as a function of thickness and temperature. The results confirm that the grown films are of good quality and free from any impurity. Studies show the silicide formation at the interface during deposition. The appearance of new band at 1550 cm⁻¹ as a result of annealing indicates the structural transformation from CoSi to CoSi₂, which further enhances at higher annealing temperatures.     

New Conjugated Molecules with Two and Three Dithienyldiketopyrrolopyrrole (DPP) Moieties Substituted at meta Positions of Benzene toward p‐ and n‐Type Organic Photovoltaic Materials

Two conjugated molecules, TADPP3 and TADPP2‐TT , are reported, in which three and two dithienyldiketopyrrolopyrrole (DPP) moieties, respectively, are substituted at the meta positions of benzene. Based on cyclic voltammetry and absorption data, TADPP3 and TADPP2‐TT possess similar HOMO and LUMO energies of about ?5.2 and ?3.4 eV, respectively. Thin films of TADPP3 and TADPP2‐TT exhibit p‐type semiconducting behavior with hole mobilities of 2.36×10^?3 and 3.76×10^?4 cm² V^?1 s^?1 after thermal annealing. Molecules TADPP3 and TADPP2‐TT were utilized as p‐type photovoltaic materials to fabricate organic solar cells after blending with phenyl C₇₁ butyric acid methyl ester ( PC₇₁BM ) and phenyl C₆₁ butyric acid methyl ester ( PC₆₁BM ). The relatively low J_SC and fill factor values can be attributed to poor film morphologies based on AFM and XRD studies. A solar cell with a thin film of TADPP3 with PC₇₁BM in a weight ratio of 1:2 exhibits a high open‐circuit voltage (V_OC) of 0.99 V and a power conversion efficiency (PCE) of 2.47 %. Interestingly, TADPP3 can also be employed as an n‐type photovoltaic material. The blended thin film of TADPP3 with P3HT in a weight ratio of 1:2 gave a high V_OC of 1.11 V and a PCE of 1.08 % after thermal annealing.     

Comparative study on structure and properties of titanium/silicon mono‐ and co‐doped amorphous carbon films deposited by mid‐frequency magnetron sputtering

The titanium/silicon mono‐ and co‐doped amorphous carbon films were deposited by mid‐frequency magnetron sputtering Ti target, Si target, and Ti80S20 alloy target, respectively. The effects of doped elements on the composition, surface morphology, microstructure, and mechanical and tribological properties of the films were investigated. The results reveal that the ratio of sp³ and sp² carbon bonds of the films is regulated between 0.28 and 0.62 by a combination of Ti and Si dopant. The addition of small amounts of silicon leads to an increase in sp³ bonds and disorder degree of the sp² carbon. The co‐doped film exhibits significantly superior friction performance than the mono‐doped films. The ultra‐low friction (μ < 0.01) was achieved under a load of 2 N in ambient air with 40% RH. By comparing to the mono‐and co‐doped films, it is thought that the sp³/sp² ratio of the films may play a key role for the superlow friction. Copyright © 2013 John Wiley & Sons, Ltd.     

Bioactivity and mechanical properties of nickel‐incorporated hydrogenated carbon nanocomposite thin films

In this paper, the influence of nickel incorporation on the mechanical properties and the in vitro bioactivity of hydrogenated carbon thin films were investigated in detail. Amorphous hydrogenated carbon (a‐C:H) and nickel‐incorporated hydrogenated carbon (Ni/a‐C:H) thin films were deposited onto the Si substrates by using reactive biased target ion beam deposition technique. The films' chemical composition, surface roughness, microstructure and mechanical properties were investigated by using XPS, AFM, TEM, nanoindentation and nanoscratch test, respectively. XPS results have shown that the film surface is mainly composed of nickel, nickel oxide and nickel hydroxide, whereas at the core is nickel carbide (Ni₃C) only. The presence of Ni₃C has increased the sp² carbon content and as a result, the mechanical hardness of the film was decreased. However, Ni/a‐C:H films shows very low friction coefficient with higher scratch‐resistance behavior than that of pure a‐C:H film. In addition, in vitro bioactivity study has confirmed that it is possible to grow dense bone‐like apatite layer on Ni/a‐C:H films. Thus, the results have indicated the suitability of the films for bone‐related implant coating applications. Copyright © 2011 John Wiley & Sons, Ltd.     

Low‐Temperature Molten‐Salt Production of Silicon Nanowires by the Electrochemical Reduction of CaSiO3

Silicon is an extremely important technological material, but its current industrial production by the carbothermic reduction of SiO₂ is energy intensive and generates CO₂ emissions. Herein, we developed a more sustainable method to produce silicon nanowires (Si NWs) in bulk quantities through the direct electrochemical reduction of CaSiO₃, an abundant and inexpensive Si source soluble in molten salts, at a low temperature of 650 °C by using low‐melting‐point ternary molten salts CaCl₂–MgCl₂–NaCl, which still retains high CaSiO₃ solubility, and a supporting electrolyte of CaO, which facilitates the transport of O²⁻ anions, drastically improves the reaction kinetics, and enables the electrolysis at low temperatures. The Si nanowire product can be used as high‐capacity Li‐ion battery anode materials with excellent cycling performance. This environmentally friendly strategy for the practical production of Si at lower temperatures can be applied to other molten salt systems and is also promising for waste glass and coal ash recycling.     

Investigating Pb diffusion across buried interfaces in Pb(Zr0.2Ti0.8)O3 thin films via time‐of‐flight secondary ion mass spectrometry depth profiling

The diffusion of Pb through Pb(Zr_0.2Ti_0.8)O₃(PZT)/Pt/Ti/SiO₂/Si thin film heterostructures is studied by using time‐of‐flight secondary ion mass spectrometry depth profiling. The as‐deposited films initially contained 10 mol% Pb excess and were thermally processed at temperatures ranging from 325 to 700°C to promote Pb diffusion. The time‐of‐flight secondary ion mass spectrometry depth profiles show that increasing processing temperature promoted Pb diffusion from the PZT top film into the buried heterostructure layers. After processing at low temperatures (eg, 325°C), Pb⁺ counts were low in the Pt region. After processing at elevated temperatures (eg, 700°C), significant Pb⁺ counts were seen throughout the Pt layer and into the Ti and SiO₂ layers. Intermediate processing temperatures (400, 475, and 500°C) resulted in Pb⁺ profiles consistent with this overall trend. Films processed at 400°C show a sharp peak in PtPb⁺ intensity at the PZT/Pt interface, consistent with prior reports of a Pt₃Pb phase at this interface after processing at similar temperatures.     

The high‐temperature tribological properties of Si‐DLC films

The tribological properties of Silicon‐containing diamond‐like‐carbon (Si‐DLC) films, deposited by magnetron sputtering Si target in methane/argon atmosphere, were studied in comparison with diamond‐like‐carbon (DLC) films. The DLC films disappeared because of the oxidation in the air at 500 °C, whereas the Si‐DLC films still remained, implying that the addition of Si improved significantly the thermal stability of DLC films. Retarded hydrogen release from DLC film at high temperature and silicon oxide on the surface might have contributed to lower friction coefficient of the Si‐DLC films both after annealing treatment and in situ high‐temperature environment. Copyright © 2012 John Wiley & Sons, Ltd.