Fluorescence spectra and homogeneous line widths of Cr in glass nucleating ferroelectric Li2Ge7O15

We report optical studies of the new material – Cr³⁺-doped lithium–germanate glass, containing Li₂Ge₇O₁₅ (LGO) nanocrystalline particles. While only broadband ⁴T₂–⁴A₂ fluorescence from the low-field octahedral Cr³⁺ sites was observed from Cr³⁺ ions in the glass, in LGO nanocrystals high-field Cr³⁺ centers emit ²E–⁴A₂ (R–lines) fluorescence. The process of crystallization in the course of isothermal annealing of glasses was monitored spectroscopically and the nucleation of LGO crystallites was observed starting from the smallest clusters. Using the ²E–⁴A₂ fluorescence spectra it is possible to detect the ferroelectric phase transition in LGO:Cr³⁺ nanocrystals, whose critical temperature was found to be similar to that of the bulk crystals. Long-lived spectral holes were burned in the inhomogeneously broadened R-lines of Cr³⁺ in LGO nanocrystals at low temperatures. The linear temperature dependence of hole widths shows that the homogeneous broadening of ⁴A₂–²E transitions of Cr³⁺ in nanocrystals is due to interaction of Cr³⁺ electronic levels with the two-level systems (TLS) of the surrounding glass. The range of the Cr³⁺-TLS elastic dipole–dipole interaction is estimated.     

YNbO4：Tm3+/Yb3+上转换发光特性研究

按照50Nb₂O₅-（46-x）Y₂O₃-4Yb₂O₃-xTm₂O₃（x=0.1,0.2,0.5,1,2）的配比方式,采用高温固相法制备出了掺杂Tm³⁺/Yb³⁺的YNbO₄晶体粉末。在980 nm红外光激发下,观测到波长为478,645,707 nm的上转换荧光,分别对应于Tm³⁺离子的¹G₄→³H₆、¹G₄→³F₄、³F₃→³H₆能级跃迁过程。利用上转换发射功率与980 nm激光器工作电流关系估算出跃迁过程吸收光子数目为2.72,2.69,2.01,从而确定出前两者为三光子吸收过程,最后一个对应于双光子吸收过程。运用Judd-Ofelt理论研究样品光谱特性,根据样品的吸收谱得到样品的谱线强度参数Ω_t（t=2,4,6）,进而得出理论振子强度及实验振子强度,二者均方根偏差δ_rms=1.299×10^-7。计算了Tm³⁺离子向下能级跃迁的跃迁几率、跃迁分支比等参数。最后得出结论：（1）³F₄能级寿命较长,适合作为上转换中间能级;（2）³H₅能级寿命较长,且³H₅→³H₆跃迁分支比（96.46%）接近100%,可用于产生1 216 nm激光。     

Microwave studies of the superconducting state in Rb3C60

Methods of electron-spin resonance (ESR) and direct, non-linear field-modulated microwave absorption (FMMA) were applied for the measurements in low- and high-purity samples of rubidium-doped fullerene, Rb₃C₆₀. The coexistence of the normal strong ESR signals and regular series of weak absorption lines similar to those seen in systems of Josephson junctions was observed in the high-purity sample. The possible influence of the vortex lattice on the ESR signals was also studied. We determined from FMMA investigations using the Portis model the critical field μ₀H^* = 40 μT, the depinning current density J_c^*(μ₀H₀ = 1 mT) 4 × 10⁸ A/m² in low magnetic field and J_c^*(μ₀H₀ > 100 mT) 1.6 × 10⁸ A/m² in higher fields. These values were generally one order of magnitude higher than the highest corresponding values previously observed in high-temperature superconductors (HTS's).     

High-resolution gamma-ray spectroscopy of ΛLi

We report on the first observation of hypernuclear γ transitions using germanium detectors. Using a large-acceptance Ge detector system, we observed two γ transitions in _Λ⁷Li, the spin-flip transition at 689±4keV and the transition at 2050±2 keV (preliminary). The strength of the ΛN spin-spin interaction is derived from the energy of the former transition. As for the latter transition, B(E2) was measured to be 3.9±0.6±0.4 e²fm⁴ (preliminary), which indicates a shrinkage of the nuclear size of _Λ⁷Li from ⁶Li and confirms “glue-like role” of Λ.     

Experimental observation of the Σ hypernuclei, ΣH and ΣC

The hypernuclei _Σ⁶H and _Σ¹⁶C were observed by the (K⁻, π⁺) reaction on targets of ⁶Li and liquid O, respectively, at 713 MeV/c incident K⁻ momentum. Structure is seen in _Σ⁶H which may be interpreted in terms of particle-hole excitations similar to the previously observed states in _Λ⁶Li. The inablitity to resolve individual Σ hypernuclear levels in _Σ¹⁶C, due in part to the excitation of non-coherent states as a result of the large momentum transfer of about 130 MeV/c, precludes the extraction of the Σ-nucleus spin-orbit potential strength. The Σ-nucleus well depth appears to be 7 to 10 MeV less than that for the Λ.     

Green and red up-conversion emissions of Er–Yb Co-doped TiO2 nanocrystals prepared by sol–gel method

In this paper, green and red up-conversion emissions of Er³⁺–Yb³⁺ co-doped TiO₂ nanocrystals were reported. The phase structure, particle size and optical properties of Er³⁺–Yb³⁺ co-doped TiO₂ nanocrystals samples were characterized by using X-ray diffraction (XRD), transmission electron microscopy (TEM), UV–vis–NIR absorption spectra and photoluminescence (PL) spectra. Green and red up-conversion emissions in the range of 520–570 nm (²H_11/2, ⁴S_3/2→⁴I_15/2) and 640–690 nm (⁴F_9/2→⁴I_15/2) were observed for the Er³⁺–Yb³⁺ co-doped TiO₂ nanocrystals. The visible up-conversion mechanism and temperature dependence of up-conversion emission for Er³⁺ in TiO₂ nanocrystals were discussed in detail.     

近紫外激发具有颜色可调的Er3+/Eu3+共掺BiOCl荧光粉

本文采用固相法在500℃合成了Er³⁺/Eu³⁺共掺BiOCl 荧光粉, 并通过XRD, SEM, 吸收, 激发和发射光谱研究了其结构、形貌和发光特性. XRD 和SEM结果表明在500℃下即可成功合成纯四方相片层结构的Er³⁺/Eu³⁺共掺BiOCl荧光粉. 吸收光谱表明掺杂Er³⁺/Eu³⁺离子使BiOCl形成杂质能级; 激发光谱显示该荧光粉具有来自于基质BiOCl价带(VB)到导带(CB)跃迁的优异宽带近紫外激发特性. 在380 nm近紫外光激发下, 同时获得了Er³⁺离子和Eu³⁺离子的特征发射峰, 其中发光中心位于410 nm (²H_9/2→⁴I_15/2), 525 nm (²H_11/2→⁴I_15/2), 554 nm (⁴S_3/2→⁴I_15/2), 673 nm (⁴F_9/2→⁴I_15/2)的发射峰来自于Er³⁺离子的跃迁, 而581 nm(⁵D₀→⁷F₀), 594 nm (⁵D₀→⁷F₁), 622 nm (⁵D₀→⁷F₂), 653 nm (⁵D₀→⁷F₃), 699 nm (⁵D₀→⁷F₄)的发射峰则来自于Eu³⁺离子的跃迁. 值得注意的是, 与传统Er³⁺/Eu³⁺掺杂的材料不同, 该荧光粉还具有独特高效的紫光(Er³⁺)和长波红光(Eu³⁺)发射特性, 分析表明这与BiOCl的结构有关; 并且通过改变掺杂浓度, 实现了发光颜色由黄绿光→黄光→橙红光的调节. 研究结果表明Er³⁺/Eu³⁺共掺BiOCl荧光粉有望成为一种潜在的近紫外激发白光LED荧光粉.     

Sm3+掺杂的SnNb2O6粉体的光谱特性

采用熔盐法制备了Sm³⁺掺杂的SnNb₂O₆粉体, 利用X射线粉末衍射、扫描电子显微镜对其物相和形貌进行了表征, 用激发、发射光谱和荧光寿命对样品的发光性能进行了研究.结果表明:所得样品为单斜晶系的SnNb₂O₆, 在407 nm的激发下, 有较强的橙红色发射, 最强峰位于599 nm, 属于Sm³⁺的⁴G_5/2→⁶H_7/2跃迁.     

High critical current density YBa2Cu3O7−δ tapes prepared by the surface-oxidation epitaxy method

YBa₂Cu₃O_7−δ (YBCO) films with high critical current density (J_c) were successfully fabricated on nickel tapes buffered with epitaxial NiO. NiO was prepared on the textured nickel tape by the surface-oxidation epitaxy (SOE) method. We have reported so far a critical temperature (T_c) of 87 K and J_c=4–6×10⁴ A/cm² (77 K, 0 T) for the YBCO films on NiO/Ni tapes. To enhance the superconducting properties of the YBCO films on the SOE-grown NiO, depositions of thin oxide cap layers such as YSZ, CeO₂, and MgO on NiO were investigated. These oxide cap layers were epitaxially grown on NiO and provided the template for the epitaxial growth of YBCO films. Substantially improved data of T_c=88 K and J_c=3×10⁵ A/cm² (77 K, 0 T) and 1×10⁴ A/cm² (77 K, Hc, 4 T) were obtained for YBCO film on NiO, by using a MgO cap layer with a thickness of 50 nm. The method described in this paper is a simple way to produce long YBCO tape conductors with high-J_c values.     

Deuteron NMR spectra of ND4ClO4 single crystal at low temperatures

²H NMR spectra of ND₄ClO₄ single crystal were obtained at ν₀ = 44 MHz. Orientation and temperature (1.9–75 K) dependences were measured. Fitting the spectra gives the effective quadrupole coupling constants for all deuterons and the ground torsional level structure. The isotope reduction of the (A-T) and (A-E) tunnelling splittings, i.e., the ratios of the respective splittings for NH₄⁺ and ND₄⁺, were found to be different. The splittings at T = 24 K are about 60% of the helium temperature values. The spectrum undergoes intermediate narrowing by reorientations between 26 and 34 K and tunnelling related features in the spectra are eradicated. After reaching the extreme narrowing limit, a doublet with gradually decreasing separation was observed, what was attributed to averaging by torsional oscillations of increasing amplitude. At high temperatures (T > 75 K), the narrow spectrum reflects fast multiaxial reorientation of the ammonium ion.     

Shaped crystal growth and scintillating properties of Yb:(Gd,Lu)3Ga5O12 solid solutions

Shaped single crystals of (Lu_xGd_1−x)₃Ga₅O₁₂ (0.0x1.0) and (Yb_0.05Lu_xGd_0.95−x)₃Ga₅O₁₂ (0.0x0.9) were grown by the modified micro-pulling-down method. Continuous solid solutions with garnet structure and a linear compositional dependency of crystal lattice parameter in the system Yb:(Gd,Lu)₃Ga₅O₁₂ are formed. Measured optical absorption spectra of the samples show 4f–4f transitions related to Gd³⁺ ion at 275 and 310 nm, and also an onset of charge transfer transitions from oxygen ligands to Gd³⁺ or Yb³⁺ cations below 240 nm. A complete absence of Yb³⁺ charge transfer luminescence under X-ray excitation in any of the investigated samples was explained by the overlapping of charge transfer absorption of Yb³⁺ by that of Gd³⁺ ions. For specific composition of Lu_1.5Gd_1.5Ga₅O₁₂ an intense defect-host lattice-related emission, which achieve of about 40% integrated intensity compared with Bi₄Ge₃O₁₂, was found.     

Escape of charged particles at stopping annihilation of antiprotons in the heavy nuclei of nuclear photoemulsion

“Rare” annihilation channels for antiprotons stopping on heavy (Ag, Br) nuclei of photoemulsion, have been sought; 4872 stops of antiprotons on photoemulsion nuclei are analysed. Events of formation and decay of the hyperfragment _Λ⁴H, escape of ⁸He and ⁸Li nuclei, one-prong stars with the mean range 79.5±5.1 μm of secondary slow “b” particles are found among the annihilation stars at capture on nuclei (Ag, Br). The lower limits for the production probability of _Λ⁴H and ⁸He, ⁸Li nuclei per antiproton stopping in the nuclei (Ag, Br) are

W_Λ⁴H2×10⁻⁴ and W_⁸He,⁸Li=(1.3±0.6)×10⁻³.

The branching ratio for the production of one-prong stars with the secondary “b” particles is at least (1.3±0.6)×10⁻³. Possible mechanisms for a production of these events in annihilation processes are considered.     

Ln2Sn2O7：Er3+纳米晶的制备及发光性能研究

采用溶胶-凝胶法合成Ln₂Sn₂O₇:Er³⁺(Ln=La,Gd,Y)纳米晶。通过X射线衍射和场发射扫描电子显微镜测试了样品的晶体结构和形貌,同时对样品的上转换发光性能进行了测试。结果表明:在980 nm连续激发光的激发下,样品主要表现为绿光发射。发射中心在528,549 nm的绿光和672 nm处的红光发射分别对应Er³⁺离子的⁴S_3/2→⁴I_15/2、²H_11/2→⁴I_15/2和 ⁴F_9/2→⁴I_15/2跃迁。以La₂Sn₂O₇:Er³⁺纳米晶为例,Er³⁺离子的摩尔分数为7%、退火温度为1 150℃是其制备的最佳条件,此时其各个发射峰的强度最高。对La₂Sn₂O₇:Er³⁺的发光强度与激发功率关系的研究表明,其绿光和红光发射均为双光子过程。激发光吸收和能量转移是La₂Sn₂O₇:Er³⁺纳米晶上转换发光的主要机制。     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

Conversion of VUV to UV and visible in K5Li2LnF10 containing rare-earth from cerium group (Ln=La, Ce, Pr, Nd)

The potential of single crystals K₅Li₂LnF₁₀, for applications as VUV excited phosphors has been examined. The crystals were doped with lanthanide ions (Ce³⁺–Nd³⁺) with concentrations up to 100 at%. The self-quenching of luminescence is strongly reduced in this material. Luminescence spectra in the 50,000–10,000 cm⁻¹ range and excitation spectra in the 40,000–250,000 cm⁻¹ spectral range have been recorded at room and low temperature. Intense visible emission has been observed for Nd³⁺ and Pr³⁺. For the Pr³⁺ ions strong the ¹S₀–¹I₆ transition has been recorded only for concentrated crystals. Efficient conversion of VUV excitation to UV–VIS emission was observed in crystals doped with 3 and 100 at% of cerium. In both cerium-activated crystals the lifetimes of f–d transitions were equal to 32 ns.     

用同步辐射研究掺Tb3+氟化物K2GdF5的光谱和Gd3+-Tb3+能量传递

对比了不同激发波长下水热法合成的K2GdF5:Tb3+(摩尔分数0.5％)单晶材料的光致发光谱线;监测了5 D3→7F6和5 D4→7 F5的激发谱,给出了几组窄带吸收和3个宽带吸收;分析表明窄带发射为Gd3+的8 S7/2→6FJ、8S7/2→6GJ、8S7/2→6DJ、8S7/2→6IJ的跃迁,宽带发射为Gd3+的...     

Effect of WO3 on the spectroscopic properties in Er/Yb co-doped bismuth–borate glasses

The spectroscopic properties of Er³⁺/Yb³⁺ co-doped Bi₂O₃–B₂O₃–WO₃ (BBW) glasses were analyzed and discussed. The effect of WO₃ content on the absorption spectra, the Judd–Ofelt parameters Ω_t (t=2, 4, 6), emission spectra and the lifetime of the ⁴I_13/2 level and the quantum efficiency of Er³⁺:⁴I_13/2→⁴I_15/2 transition were also investigated. With the substitution of WO₃ for B₂O₃, the measured lifetime of the ⁴I_13/2 level and the quantum efficiency of Er³⁺:⁴I_13/2→⁴I_15/2 transition increase from 0.98 to 1.31 ms and from 38.2% to 49.2%, respectively. The effective width of emission band and the emission cross-section both decrease slightly. And the emission spectra is analyzed via the different curve (σ_e−σ_a) of BBW glasses, the influence of OH⁻is also discussed.     

非晶锂离子导体B2O3-Li2O-LiCl一Al2O3中VO2+的电子自旋共振

两种非晶锂离子导体B₂O₃-0.7Li₂O-0.7LiCl-xAl₂O₃-0.1V₂O₅(x=0.05和0.15)的电子自旋共振谱研究表明:(i)ESR线型是高斯型,证实V₂O₅添加量适当;(ii)超精细结构来源于VO²⁺络离子,具有四角对称性,属C_4v群。越精细耦合张量的平行分量平均值A_//=0.0175cm^-1,垂直分量A_⊥=0.0063cm^-1。由g_//(g_⊥)求出其基态²B_2g与第一激发态²E_g的能级间距△₁=2.46×10⁴ cm^-1,基态与第二激发态²B_1g的能级间距△₂=3.03×10⁴ cm^-1;(iii)变温实验证实:Al₂O₃组分较少(x=0.05)的非晶ESR强度比x=0.15的非晶高3倍至2倍,而Al₂O₃组分越多则ESR强度随温升下降越小。     

Er3+单掺、Er3+/Yb3+共掺杂Ca12Al14O32F2的 制备及上转换发光性质

利用高温固相法成功制备了Er~(3+)单掺、Er~(3+)/Yb~(3+)共掺杂Ca_(12)Al_(14)O_(32)F_2上转换发光样品。在980 nm激光激发下,Er~(3+)单掺和Er~(3+)/Yb~(3+)共掺杂样品均呈现出较强的绿光(528,549 nm)和较弱的红光(655 nm)发射,分别归因于Er~(3+)离子的~2H_(11/2),~4S_(3/2)→~4I_(15/2)和~4F_(9/2)→~4I_(15/2)能级跃迁。随着Er离子浓度的增加,单掺杂样品上转换发光强度先增大后减小,最佳掺杂浓度为0.8%。共掺杂Yb~(3+)后,Er~(3+)的发光强度明显增大。还原气氛下合成的样品上转换发光强度增大约两倍,可能和笼中阴离子基团变化有关。发光强度和激发光功率的关系表明所得上转换发射为双光子吸收过程,借助Er~(3+)-Yb~(3+)体系能级结构详细讨论了上转换发射的跃迁机制。     

稀土离子(Eu3+,Tb3+,Ce3+)掺杂ZnAl2O4/SiO2微晶玻璃的制备与发光性能

采用凝胶法分别制备出4.5ZnO-5.5Al₂O₃-90SiO₂(ZAS)以及ZAS[DK]:RE³⁺ (RE=Eu,Tb,Ce) 透明微晶玻璃。利用X射线衍射仪(XRD)、透射电子显微镜(TEM)和荧光光谱仪(PL)等测试手段,研究了稀土离子掺杂浓度对ZAS微晶玻璃的结构和发光性能的影响。XRD结果表明,ZAS[DK]:RE³⁺ (RE=Eu,Tb,Ce)微晶玻璃包含ZnAl₂O₄晶相和SiO₂非晶相,ZnAl₂O₄平均晶粒尺寸约为30 nm,稀土离子的掺杂没有显著改变原来的ZnAl₂O₄晶体结构。TEM结果表明,900 ℃时ZnAl₂O₄从ZAS体系中析出。PL光谱显示,Eu³⁺ 存在 ⁵D₀→⁷F₂跃迁,ZAS[DK]:Eu³⁺在611 nm 处发出强烈的红色光;由于Tb³⁺ 的⁵D₄→⁷F₅ 跃迁,ZAS[DK]:Tb³⁺在541 nm 处发出明亮的绿色光;ZAS[DK]:Ce³⁺ 在381 nm处显示了蓝光发射,对应于Ce³⁺ 的5d→4f 轨道跃迁。ZAS[DK]:RE³⁺ (RE=Eu, Tb, Ce)的PL发射光谱存在着浓度猝灭现象,Eu³⁺、Tb³⁺ 和Ce³⁺的最佳单掺杂摩尔分数分别为20%、20%和3%。CIE色度图表明,ZAS[DK]: RE³⁺ (RE=Eu,Tb,Ce)的色坐标分别位于红光、绿光和蓝光区域。实验结果表明,ZAS:RE³⁺ (RE=Eu,Tb,Ce) 微晶玻璃是一种良好的可用于全色显示的白光LED材料。