Multi-spin-subband structure of dilute magnetic semiconductor quantum wells: Feedback mechanism

Using a fully self-consistent envelope function approach, we focus on wide conduction band NMS (non-magnetic semiconductor)/DMS (dilute magnetic semiconductor)/NMS quantum wells, under weak external parallel magnetic field, where many spin-subbands are usually present. We concentrate on small values of the magnetic field because we want to investigate the influence of the feedback mechanism due to the difference of the concentrations of spin-up and spin-down carriers which could induce spontaneous spin-polarization i.e. in the absence of a magnetic field. We study the spin-subband structure, the spin-subband populations and the spin-polarization as functions of the sheet carrier concentration, _Ns$N_s$, for different values of the magnitude of the exchange interaction, |J|$\left|J\right|$, between the itinerant carriers and the magnetic impurities. Our calculations for 0.01 T show that at 20 K the values of |J|$\left|J\right|$ necessary to make this feedback mechanism sufficiently strong are too high compared to the |J|$\left|J\right|$ values of common Mn-doped systems in the conduction band. However, the feedback mechanism will be sufficiently strong at low enough temperatures below 20 K for realistic values of |J|$\left|J\right|$. Moreover, we explain how increasing the sheet carrier concentration the heterostructure is transformed from an almost square quantum well to a system of two coupled heterojunctions with an intermediate soft barrier.     

Monte Carlo simulation of spin relaxation in core-shell nanowires of dilute magnetic semiconductors

Spin transport behaviour in stand-alone and core-shell nanowire (NW) structure composed of dilute magnetic semiconductor (DMS) has been analysed using Semi-classical Monte Carlo approach. Inspired by recent attempts on exploring various factors instrumental in determining the spin dynamics, we have employed four DMS materials, namely, CdMnS, CdMnSe, ZnMnSe and CdMnTe for our study. Dominant mechanisms for spin relaxation, D'yakonov-Perel and Elliot-Yafet, have been actively employed in our heuristic model to simulate the spin transport. The dependence of spin relaxation length (SRL) on the diameter of the core has been observed and explained. The first order calculations used to develop the model shows the superiority of the core-shell structure over stand-alone nanowire (NW) structure in terms of spin transport.     

Photomaganetization in diluted magnetic semiconductors

Starting from a many–body Hamiltonian for a system of photogenerated electrons and holes, spin-split by magnetic ions in diluted magnetic semiconductors, we derive, presumably for the first time, an expression for the photomagnetization as a function of the photon power, frequency, excitonic interaction and the magnetic ion concentration. Damping of nonequilibrium carriers and spin excitons is considered phenomenologically. Our results agree qualitatively with some of the systematics of the photomagnetization observed in Hg _1?x Mn _x Te.     

Spin transport and relaxation in graphene

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for the use of graphene for spin-based logic and information storage applications.     

Spin injection in a coupled system of a diluted magnetic semiconductor Zn0.80Mn0.20Se and self-assembled quantum dots of CdSe

Spin injection processes from a Zn_0.80Mn_0.20Se diluted magnetic semiconductor (DMS) to adjacent self-assembled CdSe quantum dots (QDs) were investigated by cw and time-resolved magneto-optical spectroscopy in combination with tunable laser excitation. Direct experimental evidence for the spin injection was provided from the generation of the spin polarization in the QDs, which was opposite to their expected intrinsic polarization, by resonantly generating the spins in the DMS. The observed limited spin polarization generated by the spin injection, together with the sensitivity of the spin injection efficiency on structure design, indicates severe spin loss during the process and calls for further investigations to optimize spin injection efficiency in quantum structures.     

Characterization of n-GaN dilute magnetic semiconductors by cobalt ions implantation at high-fluence

In this study, we present the structural and magnetic characteristics of cobalt ions implantation at a high-fluence (5×10¹⁶ cm⁻²) into n-GaN epilayer of thickness about 1.6 μm. The n-GaN was grown on sapphire by metal organic chemical vapor deposition (MOCVD). Rutherford backscattering channeling was used for the structural study. After implantation, samples were annealed at 700, 800 and 900 °C by rapid thermal annealing in ambient N₂. XRD measurements did not show any secondary phase or metal related-peaks. High resolution X-ray diffraction (HRXRD) was performed as well to characterize structures. Well-defined hysteresis loops were observed at 5 K and room temperature using alternating gradient magnetometer AGM and Superconducting Quantum Interference Device (SQUID) magnetometer. Temperature-dependent magnetization indicated magnetic moment at the lowest temperatures and retained magnetization up to 380 K for cobalt-ion-implanted samples.     

Demonstration of electrical spin injection into a semiconductor using a semimagnetic spin aligner

Spin injection into semiconductors has been a field of growing interest during recent years, because of the large possibilities in basic physics and for device applications that a controlled manipulation of the electrons spin would enable. However, it has proven very difficult to realize such a spin injector experimentally. Here we demonstrate electrical spin injection and detection in a GaAs/AlGaAs p-i-n diode using a semimagnetic II–VI semiconductor (Zn_{1 − x − y}Be_xMn_ySe) as a spin aligner. The degree of circular polarization of the electroluminescence from the diode is related to the spin polarization of the conduction electrons. Thus, it may be used as a detector for injected spin-polarized carriers. Our experimental results indicate a spin polarization of the injected electrons of up to 90% and are reproduced for several samples. The degree of optical polarization depends strongly on the Mn concentration and the thickness of the spin aligner. Electroluminescence from a reference sample without spin aligner as well as photoluminescence after unpolarized excitation in the spin aligner sample show only the intrinsic polarization in an external magnetic field due to the GaAs bandstructure. We can thus exclude side effects from Faraday effect or magnetic circular dichroism in the semimagnetic layer as the origin of the observed circularly polarized electroluminescence.     

Photo-induced magnetic polarons in semiconductors

Exciton magnetic polarons observed in dilute magnetic semiconductors were investigated by steady-state and pico-second time-resolved photoluminescence measurements and have shown characteristic behavior of exciton localization processes in bulk-Cd_1-x Mn _x Te and also in the quantum structures composed of the dilute magnetic semiconductors. For the quantum structures spin-dependent coherent polarizations associated with excitons and biexcitons were studied by degenerate four-wave mixing experiment. Also investigated for different chalcogenide spinel ferromagnetic semiconductors was photo-induced enhancement of exchange interaction between magnetic ions by direct magnetic flux detection in the vicinity of the Curie temperatures.     

Strain-dependent electronic and magnetic of Co-doped monolayer of WSe2

We perform first-principles calculation to investigate electronic and magnetic properties of Co-doped WSe₂ monolayer with strains from −10% to 10%. We find that Co can induce magnetic moment about 0.894 μ_B, the Co-doped WSe₂ monolayer is a magnetic semiconductor material without strain. The doped system shows half-metallic properties under tensile strain, and the largest half-metal gap is 0.147 eV at 8% strain. The magnetic moment (0.894 μ_B) increases slightly from 0% to 6%, and jumps into about 3 μ_B at 8% and 10%, which presents high-spin state configurations. When we applied compressive strain, the doped system shows a half-metallic feature at −2% strain, and the magnetic moment jumps into 1.623 μ_B at −4% strain, almost two times as the original moment 0.894 μ_B at 0% strain. The magnetic moment vanishes at −7% strain. The Co-doped WSe₂ can endure strain from −6% to 10%. Strain changes the redistribution of charges and magnetic moment. Our calculation results show that the Co-doped WSe₂ monolayer can transform from magnetic semiconductor to half-metallic material under strain.     

极化子比率变化对自旋注入有机半导体性质的影响

从自旋扩散方程和欧姆定律出发研究了铁磁层到有机半导体的自旋注入,得到了系统的电流自旋极化率。有机半导体中的载流子为自旋极化子和不带自旋的双极化子,极化子比率在有机半导体内随输运距离变化。通过计算发现匹配的铁磁和有机半导体电导率有利于自旋注入;通过调节界面电阻自旋相关性,电流自旋极化率可获得很大程度提高;极化子比率衰减速率对有机半导体电流自旋极化率具有非常重要的影响。     

Study of Zn1−xCoxO (0.02≤x≤0.08) dilute magnetic semiconductor prepared by mechanosynthesis route

Single-phase Zn_1−xCo_xO (0.02≤x≤0.08) dilute magnetic semiconductor is prepared by mechanical milling process. The shift of XRD peaks towards the higher angle and a redshift in the band gap compared to the undoped ZnO ensure the incorporation of Co²⁺ ions in the semiconductor host lattice. Pure Zn_xCo_1−xO phases show the paramagnetic behavior in the temperature range 80 K≤T≤300 K. The room temperature volume magnetic susceptibility (χ_v) estimated in case of Zn_0.96Co_0.04O is ∼10⁻⁵ emu/Oe cm³. The temperature dependence of susceptibility χ_v can be fitted well with Curie law confirming the paramagnetic interaction. The observed crystal-field splitting of 3d levels of Co²⁺ ions inside Zn_1−xCo_xO has been successfully interpreted using Curie law.     

稀磁半导体的制备与性质

报道了稀磁半导体的制备、性质与实验研究进展，介绍了稀磁半导体的应用及发展前景．     

Origin of ferromagnetism and nano-scale phase separations in diluted magnetic semiconductors

This paper reviews various origins of ferromagnetic response that has been detected in diluted magnetic semiconductors (DMS). Particular attention is paid to those ferromagnetic DMS in which no precipitation of other crystallographic phases has been observed. It is argued that these materials can be divided into three categories. The first consists of (Ga,Mn)As and related compounds. In these solid solutions the theory built on p–d Zener's model of hole-mediated ferromagnetism and the Kohn–Luttinger kp theory of semiconductors describes quantitatively thermodynamic, micromagnetic, optical, and transport properties. Moreover, the understanding of these materials has provided a basis for the development of novel methods enabling magnetisation manipulation and switching. To the second group belong compounds, in which a competition between long-range ferromagnetic and short-range antiferromagnetic interactions and/or the proximity of the localisation boundary lead to an electronic nano-scale phase separation that results in characteristics similar to colossal magnetoresistance oxides. Finally, in a number of compounds a chemical nano-scale phase separation into the regions with small and large concentrations of the magnetic constituent is present. It has recently been suggested that this spinodal decomposition can be controlled by the charge state of relevant magnetic impurities. This constitutes a new perspective method for 3D self-organised growth of coherent magnetic nanocrystals embedded by the semiconductor matrix.     

Influence of background carriers on magnetic properties of Mn-doped dilute magnetic Si

Using hybrid exchange density functional calculations we show that the type of background carriers has profound effects on magnetic interactions in Mn doped dilute magnetic Si. The p- and n-type Si were simulated by introducing an extra hole and an extra electron, respectively in the 64 atoms Si supercell. In case of p-type Si compensated by a homogeneous background potential and 1.6% Mn, the ground state is ferromagnetic, whereas other conditions remaining the same, the ground state becomes antiferromagnetic for the n-type Si. The exchange energies in Mn-doped extrinsic Si are higher by about 1 eV/Mn atom compared to the Mn doped intrinsic Si. Calculated electronic structures reveal that in p-type Si:Mn the hole localises over Mn and the short range magnetic coupling increases. Our calculations indicate that localisation of magnetic polarons at the Mn site is likely, which in turn enhances long range magnetic interaction between Mn ions and responsible for FM stabilisation. On the other hand, in the n-type host electron–electron repulsion increases within Mn–Si impurity band and the short range coupling decreases, which destroys the long range spin polarisation. These calculations explain the observed ferromagnetism in the p-type Si:Mn at higher temperatures than in the n-type Si:Mn and the magnetic moments of the systems compare well with experiments.     

Magnetic properties of Mn-doped ZnO diluted magnetic semiconductors

A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The films show paramagnetic behaviour when they are deposited in an argon plasma. The Hall measurement indicates that ferromagnetism cannot be realized by increasing the electron concentration. However, the room-temperature ferromagnetism is obtained when the films are deposited in a mixed argon-nitrogen plasma. The first-principles calculations reveal that antiferromagnetic ordering is favoured in the case of the substitution of Mn^2＋ for Zn^2＋ without additional acceptor doping. The substitution of N for O （NO^-） is necessary to induce ferromagnetic couplings in the Zn-Mn-O system. The hybridization between N 2p and Mn 3d provides an empty orbit around the Fermi level. The hopping of Mn 3d electrons through the empty orbit can induce the ferromagnetic coupling. The ferromagnetism in the N-doped Zn-Mn-O system possibly originates from the charge transfer between Mn^2＋ and Mn^3＋ via NO^-, The key factor is the empty orbit provided by substituting N for O, rather than the conductivity type or the carrier concentration.     

Comment on “Effect of annealing temperature on structure, magnetic properties and optical characteristics in Zn0.97Cr0.03O nanoparticles” by Liu et al., [Appl. Surf. Sci. 256 (2010) 3559]

The authors of a recent paper (Appl. Surf. Sci. 256 (2010) 3559) studied the effect of annealing temperature on structural, magnetic and optical properties in Cr-doped zinc oxide (Zn_0.97Cr_0.03O) nanoparticles synthesized by sol-gel method. The authors have verified that Cr ions, in 3+ valence state, substitute the Zn ions in the ZnO lattice. They concluded that the ferromagnetism observed in the samples is an intrinsic property of the Cr-doped ZnO. However, we noticed an unusual point in this article. The Cr 2p XPS spectrum shown by them is against the general trend of the 2p XPS spectra of the transition metals. In this light, we re-measured the high-resolution 2p XPS spectrum of Cr for a 3% Cr-doped ZnO sample that is entirely different than theirs. The spectrum presented by them therefore demands proper interpretations or it might mislead the researchers in this developing field.     

THz spectroscopy of diluted magnetic semiconductors and semiconductor quantum structures in ultrahigh magnetic fields

Magneto-absorption spectra in ferromagnetic semiconductor In_1−xMn_xAs films and self-organized PbSe/PbEuTe quantum dot superlattices have been studied in the terahertz range at very high magnetic fields up to 500 T. Both heavy hole (HH) and light hole (LH) cyclotron resonance (CR) have been observed in bulk In_1−xMn_xAs thin films with different Mn concentrations. The detailed Landau level calculation in terms of the effective mass approximation well explained the CR peak positions, line shapes and the dependence of the circular polarization of the incident light on the CR spectra. In InMnAs/GaSb heterostructures that have higher ferromagnetic transition temperature (T_c) than the bulk samples, the observed HH and LH cyclotron masses are larger than that in the bulk thin films. We found that the CR peak position and its line shape suddenly change in the vicinity of the ferromagnetic transition temperature, suggesting the change in the electronic structure due to the ferromagnetic transition. Electron CR in PbSe/PbEuTe quantum dots has been observed and it was found that the effective mass of the electrons is considerably modified by the quantum confinement potential and the lattice strain around the dots. A large wavelength dependence of the absorption intensity was observed due to the interference effect of the radiation inside the sample.     

On the optical energy gap of SmN

The fundamental absorption edge of SmN is measured by the optical reflection and the transmission technique using a FTIR spectrometer. The MgF₂ passivated thin films of SmN were grown by thermal evaporation. The optical spectra was collated in the energy range of 0.5 to 5.0 eV, and the optical energy gap is measured at 1.2 eV, the same as that of DyN. The measured value of the onset of the absorption in SmN does agree with that theoretically calculated, if the spin–orbit coupling is accounted for.     

Optical studies of spin precession in magnetic two-dimensional electron gases

Magnetic two-dimensional electron gases are studied using time-resolved Kerr and Faraday rotation spectroscopy in the Voigt geometry. The data directly reveal both electron and Mn spin precession in modest transverse fields. Scattering by Mn ions dominates the electron spin relaxation processes in these materials, and prevents the electron gas from acquiring a long-lived spin polarization as observed in non-magnetic structures. Nonetheless, a persistent Mn spin polarization occurs which creates a oscillating magnetic field within the electron gas for hundreds of picoseconds.     

Giant magnetic moments in dilute magnetic semiconductors

The concentration dependence of the specific magnetic moment value at room temperature in dilute semiconductor titanium oxides doped with either Co or Fe has been investigated. This value was found to increase sharply at small concentrations of magnetic impurity. The magnetic moment of 22.9 μ_B per impurity atom has been revealed for TiO₂ doped with 0.15 at% Co, not yet reported in any semiconductor oxide systems. We conclude the observed giant magnetic moments are caused by the crystal lattice polarization at small impurity concentrations. The comparison with published data point to different types of the magnetization concentration dependence for various semiconductor matrixes that is probably related to the dielectric permittivity of the environment.