Bismuth ferrite composite thin films

0.60Bi_0.90La_0.10FeO₃–0.40Pb(Zr_0.52Ti_0.48)O₃ composite thin films were deposited on Pt/TiO₂/SiO₂/Si(100) substrates by radio-frequency sputtering and their ferroelectric and fatigue properties were mainly investigated. The composite thin films have a low dielectric loss, a high dielectric constant, and enhanced ferroelectric properties of 2P _r～122.6 μC/cm² and 2E _c～479.3 kV/cm, together with a fatigue-free behavior at 200 kHz. Their fatigue behavior is strongly dependent on measurement frequencies, and the concentration of oxygen vacancies plays an important role in their fatigue behavior.     

Crystallization of thin selenium films

The effect of the crystallization temperature and the substrate material on the morphology of the crystals produced by the heating of amorphous selenium films have been studied by electron microscopy and microscopic electron diffraction. The transition from ordinary crystallization to spherulite crystallization is found to be governed primarily by the crystallization temperature, and the spherulite crystallization is observed only at low temperatures. The substrate material affects only the ratio of the rates at which various crystal faces grow; it does not affect the transition from one type of crystallization to another. On all substrates, spherulites form as a result of the splitting of initial single-crystal nuclei; the crystallography of the splitting is the same.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 12, No. 3, pp. 28–31, March, 1969.     

Effect of stress in copper ferrite thin films

Cubic copper ferrite thin films, obtained by rf sputtering on quartz and subsequent post-annealing and quenching, show a large coercivity of about 300–600 Oe. Stress measurements using X-ray diffraction show high value of stress of about 400–1000 MPa. Both the stress and coercivity are found to increase with the decrease of the thickness of the films. There appears to be a contribution of the stress to the coercivity of the films, in the in-plane M–H loops.     

六方InN薄膜的载流子输运特性研究

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Preparation and magnetic properties of hexagonal barium ferrite films using BaM nanoparticles

Barium ferrite (BaFe₁₂O₁₉—BaM) thick films have been synthesized using a spinning coating sol-gel process. The coating sol was formed from BaM powders dispersed in the BaM raw sol. XRD, SEM, EDX, vibrating sample magnetometer (VSM), and ac susceptometer, were employed to evaluate the structure, composition and magnetic properties of BaM thick films. The results indicated that a uniform and crack-free coating of BaM with ∼15 μm thickness can be produced with good deal of consistency. The perpendicular and in-plane coercivity had the same value of 5 kOe. The high coercivity is attributed to the magnetocrystalline anisotropy and grain size of the sintered BaM layer. Effective magnetic susceptibility in all measurements have linear variation with increasing dc field.     

Magnetic properties of disordered ferrite and ilmenite-hematite thin films

We have synthesized thin films of disordered zinc ferrite (ZnFe₂O₄) and ilmenite-hematite (FeTiO₃-Fe₂O₃) solid solution, the former and the latter of which are interesting from the viewpoints of magnetooptics and spintronics, respectively, by utilizing sputtering and pulsed laser deposition methods, and have explored their magnetic, magnetooptical, and electrical properties. Although ZnFe₂O₄ possesses a normal spinel structure as its stable phase, some of the Fe³⁺ ions occupy the tetrahedral as well as the octahedral sites in ZnFe₂O₄ of which the sputtered thin film is composed. Consequently, the as-deposited thin film manifests large magnetization even at room temperature although the magnetic phase transition temperature of the stable phase of ZnFe₂O₄ is as low as 10 K. Also, the thin film exhibits a cluster spin glass transition at a temperature as high as 325 K. Furthermore, the ZnFe₂O₄ thin films exhibit large Faraday effects at a wavelength of 400 nm or so. The ilmenite-hematite solid solution is one of the ferrimagnetic semiconductors. Most of the compositions possess Curie temperatures higher than room temperature, and the type of carrier can be tuned only by changing the composition. We have succeeded in synthesizing solid-solution thin films of various compositions grown epitaxially on sapphire substrates with a (0 0 0 1) plane, and have shown that the thin films are ferrimagnetic semiconductors.     

Preparation and characterization of ZnSn-substituted barium ferrite thin films

The preparation of ZnSn-substituted barium ferrite films by sputtering deposition was studied. The as-sputtered films were amorphous, and annealing at a minimum of 750 °C was required to crystallize the films, based on the X-ray diffraction analysis and the magnetic measurements. Scanning electron microscopy combined with energy-dispersive X-ray spectroscopic microanalysis confirmed that the films were single phase with the composition BaZn_xSn_xFe_12−2xO₁₉, x=0.2−0.3, and their thicknesses were 0.4-1.0 μm when annealed at 750-900 °C. Atomic and magnetic force microscopy studies showed no significant grain growth upon annealing and that the films consisted of single-domain grains forming interaction-cluster-type domains. The natural ferromagnetic resonance frequency was determined at around 4 GHz, together with substantial magnetic losses that make these films promising candidates for microwave absorbers.     

Crystallization of sputter deposited amorphous metal thin films

We have studied the crystallization of DC sputter deposited amorphous W-Si alloys under three separate conditions: free standing films, amorphous films deposited on Si substrates, and films with one of four different overlayers. In the case of the free standing films the crystallization temperature versus composition was measured by differential thermal analysis (DTA) for films with Si contents from 5 at% to 38 at%. Films with Si concentrations of 38% to 22% were amorphous as deposited, while those with less Si were crystalline. The crystallization temperature was a strong function of composition with a maximum T_c of 915°C (at a heating rate of 20 K/min) in alloys with 28% Si. Overlayers of W, Cu, Au and Al were investigated. Both the W and Cu overlayers had little effect on the stability of the underlying W-Si, while both the Au and Al reduced the crystallization temperature by at least 100°C. The results reported here reinforce the observation that the choice of overlayer plays a critical role in determining the overall stability of metallization systems that include amorphous layers as diffusion barriers.     

Crystallization mechanism in Sb:Te thin films

The aim of this work is to study the mechanism of crystallization in Sb:Te thin films using differential scanning calorimetry (DSC), four-probe resistivity and X-ray diffraction (XRD) measurements.The DSC showed that the Sb_70+xTe_30−x films with x in the range of −3⩽x⩽3 show one exothermic reaction at 110 °C, whereas the films with x in the range of 3⩽x⩽13 present an additional one at about 70 °C. XRD measurements and Rietveld analysis have shown that the first exothermal peak can be associated to the formation of crystalline Sb and the second to the process of transformation of the Sb and the remaining material into a more stable Sb_2nTe₃ crystalline phase. Appearance of additional Sb phase decreases the crystallization temperature of Sb_70+xTe_30−x films.These structural transformations are also observed in the four-probe resistivity measurements: a one-step crystallization process in the Sb_70+xTe_30−x films with x in the range of −3⩽x⩽3and a two-steps crystallization process in films with x in the range of 3⩽x⩽13.The results of this investigation have shown that the amorphous-to-crystalline phase transformation in eutectic Sb:Te depended on the films composition.     

Crystallization kinetics of amorphous aluminum–tungsten thin films

82 W₁₈ to Al₆₂W₃₈ compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al₄W), the interface-controlled crystallization probably occurred. Received: 30 March 1998/Accepted: 9 September 1998     

Magnetic properties of substituted strontium ferrite nanoparticles and thin films

SrFe_12−x(Zr_0.5Mg_0.5)_xO₁₉ nanoparticles and thin films with x=0-2.5 were synthesized by a sol-gel method on thermally oxidized silicon wafer (Si/SiO₂). Structural and magnetic characteristics of synthesized samples were studied employing x-rays diffraction (XRD), transmission electron microscopy (TEM), magnetic susceptometer, atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and vibrating sample magnetometer (VSM). TEM micrographs display that the narrow size distribution of ferrite nanoparticles with average particle size of 50 nm were fabricated. Fitting obtained data of effective magnetic susceptibility by Vogel-Fulcher law confirms the existence of strong magnetic interaction among fine particles. XRD patterns and FE-SEM micrographs demonstrated that single phase c-axis hexagonal ferrite films with rather narrow grain size distribution were obtained. AFM micrographs exhibited that the surface roughness increases with an increase in Zr-Mg content. It was found from the VSM graphs that with an increase in substitution contents the coercivity decreases, while the saturation of magnetization increases. The Henkle plots confirms the existence of exchange coupling among nano-grain in ferrite thin films.     

Phase transformation of strontium hexagonal ferrite

The phase transformation of strontium hexagonal ferrite (SrFe₁₂O₁₉) to magnetite (Fe₃O₄) as main phase and strontium carbonate (SrCO₃) as secondary phase is reported here. SrFe₁₂O₁₉ powder was obtained by a heat treatment at 250 °C under controlled oxygen flow. It was observed that the phase transformation occurred when the SrFe₁₂O₁₉ ferrite was heated up to 625 °C in confinement conditions. This transformation took place by a combination of three factors: the presence of stresses in the crystal lattice of SrFe₁₂O₁₉ due to a low synthesis temperature, the reduction of Fe³⁺ to Fe²⁺ during the heating up to 625 °C, and the similarity of the coordination spheres of the iron atoms present in the S-block of SrFe₁₂O₁₉ and Fe₃O₄. X-ray diffraction analysis confirmed the existence of strain and crystal deformation in SrFe₁₂O₁₉ and the absence of them in the material after the phase transformation. Dispersive X-ray absorption spectroscopy and Fe⁵⁷ Mössbauer spectroscopy provided evidences of the reduction of Fe³⁺ to Fe²⁺ in the SrFe₁₂O₁₉ crystal.     

Rare earth doped cobalt ferrite thin films deposited by PLD

CoFe₂O₄ thin films with preferential texture structure, small grain size, and perpendicular magnetic anisotropy can be obtained by the pulsed laser deposition (PLD) technique. In this work, we studied the influence of the Fe³⁺ ions substitution by three elements from lanthanide group (Dy, La, and Gd) on the structural properties of the thin films. The samples were deposited by Nd:YAG laser (λ=532 nm, 10 ns) ablation of CoFe_1.8RE_0.2O₄, (RE=Dy, La, Gd) targets at various substrate temperatures ranging from room temperature to 600 °C. The microstructure and chemical composition of the thin films were investigated by Raman spectroscopy, XRD, SEM-EDS, and ToF-SIMS. The XRD patterns and Raman spectra of the thin films indicated the formation of a single spinel structure. Thus, the desired substitution of the iron ions in the spinel lattice with the RE elements was achieved in the thin films, although in the bulk material, their presence determined the formation of a residual phase with a perovskite-type structure.     

Spin-deposited nanocrystalline lithium ferrite thin films: Fabrication and characterization

Thin films of lithium ferrite (with general composition Li_0.5Fe_2.5O₄) were fabricated at low temperatures (up to 650 °C) by citrate-route using spin-deposition technique. Deposited films consisted of nanometer-sized grains as evidenced by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. XRD patterns for annealed films showed broad peaks exhibiting a spinel phase. Size of nanocrystallites is estimated to be 3-7 nm using Scherrer's equation. Average grain size ∼8.5 nm is observed from TEM images of films annealed at 650 °C. Scanning electron micrographs show the formation of spherical aggregates of around 130 nm in diameter. The AFM analysis clearly evidenced the development of nanograins even at low (∼500 °C) annealing temperatures. Significant decrease in complex dielectric permittivity (∈′ − j∈″) with frequency is observed in the low frequency (100 Hz-1 MHz) as well as in X-band microwave frequency (8-12 GHz) region. ∈′ is found to be in the range of 15.7-33.9 in low frequency region, whereas in X-band microwave frequency region, it is found to lie between 3.9 and 4.9. Similarly, ∈″ is found to be 0.16-5.9 in the low frequency region, and 0.002-0.024 in the X-band microwave frequency region. Room temperature dc resistivity of these films is estimated to lie in the range of 10⁶-10⁸ Ω cm. These results strongly suggest that citrate-route processed nanocrystalline lithium ferrite thin films are promising candidates for monolithic microwave integrated circuits (MMICs).     

Insulator-metal transition in thin films of ferrite Fe3O4

Insulator-metal transition in Fe₃O₄ is analysed on the basis of electron-electron correlation of nearest neighbour sites. A double time Zubarev Green function technique is used. It is shown that up to 120 °K system stays in a localised state and then goes into the band-state. The band-state completely disorders itself at 300 °K. Conductivity and thin film data are briefly analysed.     

Crystallization kinetics of a-Se,part 4: thin films

Differential scanning calorimetry was used to study the crystallization behaviour of selenium thin films in dependence on film thickness and deposition rate. In the current work, which is the fourth in a sequence of articles dealing with crystallization kinetics of a-Se, the non-isothermal crystallization kinetics was described in terms of the Johnson-Mehl-Avrami nucleation-growth model. Two-dimensional crystallite growth, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. It was found that neither the film thickness (tested within the 100–2350?nm range) nor the deposition rate appears to have any significant influence on the crystallization kinetics. However, the higher amount of intrinsic defects possibly produced by a higher deposition rate seems to accelerate the crystallization, shifting it towards lower temperatures. Very good correlation between the results obtained for thin films and those for fine powders was found. Based on the obtained results, interpretations of relevant literature data were made.