Features of the pre-equilibrium charge states of light ions passing through thin celluloid films

A semi-empirical method for establishing of the average charge of ions passing through thin celluloid films is proposed. Calculations for helium (He) and nitrogen (N) ions with different initial velocities (12?18.7 × 10⁸ cm/s for He and 4?12 × 10⁸ cm/s for N) are presented. The equilibrium thickness of a celluloid target in dependence on the initial charge states of incident ions is evaluated.     

Three-component approximation for estimation of the nonequilibrium charge fractions of boron and nitrogen ions on passing through thin films

Analytical expressions for nonequilibrium charge fractions and the dependence of the average ion charge on the target thickness are derived on the basis of a three-component approximation. Calculations for B ⁱ⁺ and N ⁱ⁺ ions with velocities of 12 × 10⁸ cm/s (E = 0.75 MeV/nucleon) upon passing through thin organic films (celluloid) are conducted. The calculation results are in agreement with experimental data within the accuracy of measurement (2–5%).     

Charge exchange cross sections of carbon ions

Based on experimental data on the ion charge distributions, the cross sections of single electron loss σ _{i, i + 1} and single electron capture σ _{i, i ? 1} by carbon ions with velocities (2.7–8) × 10⁸ cm/s in different gaseous media (He, N₂, and Ar) have been obtained. Regularities of the cross section variation of the electron capture and loss by carbon ions as a function of the ion velocity, ion charge, and atomic number of the target have been for the first time studied in a wide range of the initial ion charge, from i = 0 to i = 6. A qualitative agreement of the obtained results with the published data has been established for a number of other ions. Theoretical calculations of the cross sections of single electron loss by carbon ions in helium have been carried out.     

Energy losses of beryllium ions penetrating through thin films before the attainment of charge equilibrium

The dependences between the energy losses of beryllium ions penetrating through thin organic (celluloid) films and the initial ion charge i ₀ and target thickness t are calculated. The proposed modified method is used to determine the charge fractions and average charge of an ion beam and the half-width and skewness of the charge distributions before the attainment of charge equilibrium. Calculations are performed for Be ⁱ⁺ ions with a velocity of 8 × 10⁸ cm/s (E = 0.33 MeV/nucleon).     

The TITAN mass measurement facility at TRIUMF-ISAC

The TITAN facility at TRIUMF-ISAC will use four ion traps with the primary goal of determining nuclear masses with high precision, particularly for short lived isotopes with lifetimes down to approximately 10 ms. The design value for the accuracy of the mass measurement is 1 ×10^???8. The four main components in the facility are an RF cooler/buncher (RFCT) receiving the incoming ion beam, an electron beam ion trap (EBIT) to breed the ions to higher charge states, a cooler Penning trap (CPET) to cool the highly charged ions, and finally the measurement Penning trap (MPET) for the precision mass determination. Additional goals for this system are laser spectroscopy on ions extracted from the RFCT and beta spectroscopy in the EBIT (in Penning trap mode) on ions that are purified using selective buffer gas cooling in the CPET. The physics motivation for the mass measurements are manifold, from unitarity tests of the CKM matrix to nuclear structure very far from the valley of stability, nuclear astrophysics and the study of halo-nuclei. As a first measurement the mass of ¹¹Li will be determined. With a lifetime of 8.7 ms and a demonstrated production rate of 4×10⁴ ions/sec at ISAC the goal for this measurement at TITAN is a relative uncertainty of 5×10^???8. This would check previous conflicting measurements and provide information for nuclear theory and models.     

Effect of In3+ ions on the electrochemical performance of the positive electrolyte for vanadium redox flow batteries

Influence of In³⁺ ions on electrochemical performance of positive electrolyte for vanadium redox flow battery was investigated in this paper. The electrochemical activity and kinetics of V(IV)/V(V) redox couple can be enhanced by the addition of In³⁺ ions, and the optimal concentration of In³⁺ ions was found at 10 mM. At this condition, the oxidation peak current with 10 mM In³⁺ ions is 46.6 mA at a scan rate of 20 mV s^?1, larger than that of pristine electrolyte (41.8 mA), and the standard rate constant is 6.53?×?10^?5 cm s^?1, 42 % larger than that of the pristine electrolyte (4.58?×?10^?5 cm s^?1). The cell using electrolyte with 10 mM In³⁺ ions was assembled, and the charge–discharge performance was evaluated, and the average energy efficiency increases by 1.9 % compared with the pristine cell. The improved electrochemical performance may be ascribed to that In³⁺ ions change the hydration state of vanadium ions in electrolyte and promote charge transfer process.     

Single-electron charge transfer and excitations at collisions between Bi<Superscript>4+</Superscript> ions in the kiloelectronvolt energy range

Pioneering theoretical data for single-electron charge transfer and excitations due to collisions between Bi⁴⁺ ions in the ground (6s) and metastable (6p) states are gained in the collision energy interval 5–75 keV in the center-of-mass frame. The cross sections of the processes are calculated in terms of the close-coupling method in the basis of two-electron quasi-molecular states for the Coulomb trajectory of nuclei. It is found that single-electron capture into the singlet 6s ² states of Bi³⁺ ions makes a major contribution to the charge transfer total cross section for Bi⁴⁺(6s) + Bi⁴⁺(6s) collisions (reaction 1), whereas single-electron capture into the singlet 6s6p states is the basic contributor to the total cross section in Bi⁴⁺(6s) + Bi⁴⁺(6p) collisions (reaction 2). In the collision energy interval mentioned above, the collision cross sections vary between 1.2 × 10^?17 and 1.9 × 10^?17 cm² for reaction 1 and between 3.8 × 10^?17 and 5.3 × 10^?17 cm² for reaction 2. In reaction 1, the 6s → 6p excitation cross sections vary from 0.6 × 10^?16 to 0.8 × 10^?16 cm² for the singlet channel and from 2.2 × 10^?16 to 2.8 × 10^?16 cm² for the triplet channel. The calculation results are compared with the data obtained in experiments with crossed ion beams of kiloelectronvolt energy. The fraction of metastable ions in the beams is estimated by comparing the experimental data with the weighted average theoretical results for the cross sections of reactions 1 and 2. From the data for the charge transfer cross sections, one can estimate particle losses in relativistic beams due to a change in the charge state of the ions colliding with each other in the beam because of betatron oscillations.     

Probing charge carrier compensation in high energy ion irradiated III–V semiconductor by Raman spectroscopy and Hall measurements

Raman spectroscopy and Hall measurements have been carried out to investigate the differences in near‐surface charge carrier modulation in high energy (~100 MeV) silicon ion (Si⁸⁺) and oxygen ion (O⁷⁺) irradiated n‐GaAs. In the case of O ion irradiation, the observed decrease in carrier concentration with increase in ion fluence could be explained in the view of charge compensation by possible point defect trap centers, which can form because of elastic collisions of high energy ions with the target nuclei. In Si irradiated n‐GaAs one would expect the carrier compensation to occur at a fluence of 2.5 × 10¹³ ions/cm², if the same mechanism of acceptor state formation, as in case of O irradiation, is considered. However, we observe the charge compensation in this system at a fluence of 5 × 10¹² ions/cm². We discuss the role of the complex defect states, which are formed because of the interaction of the primary point defects, in determining carrier concentration in a Si irradiated n‐GaAs wafer. The above results are combined with the reported data from the literature for high energy silver ion irradiated n‐GaAs, in order to illustrate the effect of both electronic and nuclear energy loss on trap creation and charge compensation. Copyright © 2016 John Wiley & Sons, Ltd.     

Developments at the SLOWRI facility at RIKEN: precision optical spectroscopy of 7,9,10,11Be+ ions

Precision optical spectroscopy of radioactive Be isotopes produced in projectile fragmentation has been performed for the first time at the prototype SLOWRI facility of RIKEN RI-Beam Factory. The ground state hyperfine constants of ⁷Be⁺ and ¹¹Be⁺ were determined with relative accuracies of 6 × 10^?7 and 3 × 10^?8, respectively, by laser-microwave double resonance spectroscopy of laser-cooled ions in a trap. The optical transition energies from the ground S-state to the excited P-state of Be isotope ions were also measured to determine the nuclear charge radii from the isotope shifts. Development of the universal slow RI-beam facility??SLOWRI??based on the rf-carpet ion guide technique is progressing at RIKEN RI-beam factory. An additional capability of providing parasitic slow RI-beams from the projectile fragment separator BigRIPS is also discussed.     

Synthesis of Ag metallic nanoparticles by 120 keV Ag− ion implantation in TiO2 matrix

TiO₂ thin film synthesized by the RF sputtering method has been implanted by 120 keV Ag^? ion with different doses (3?×?10¹⁴, 1?×?10¹⁵, 3?×?10¹⁵, 1?×?10¹⁶ and 3?×?10¹⁶ ions/cm²). Further, these were characterized by Rutherford back Scattering, XRD, X-ray photoelectron spectroscopy (XPS), UV–visible and fluorescence spectroscopy. Here we reported that after implantation, localized surface Plasmon resonance has been observed for the fluence 3?×?10¹⁶ ions/cm², which was due to the formation of silver nanoparticles. Ag is in metallic form in the matrix of TiO₂, which is very interestingly as oxidation of Ag was reported after implantation. Also, we have observed the interaction between nanoparticles of Ag and TiO₂, which results in an increasing intensity in lower charge states (Ti³⁺) of Ti. This interaction is supported by XPS and fluorescence spectroscopy, which can help improve photo catalysis and antibacterial properties.     

A highly luminescent complexes of Eu(III) and Tb(III) with norfloxacin and gatifloxacin doped in sol–gel matrix: A comparable approach of using silica doped Tb(III) and Eu(III) as optical sensor

Highly luminescent complexes of Eu and Tb ions with norfloxacin (NFLX) and gatifloxacin (GFLX) were prepared in sol–gel matrix. The red and green emissions of Eu and Tb ions were obtained by the energy transfer from the triplet state of (NFLX) and (GFLX) to the excited emitting states (⁵D₀ and ⁵D₄) of Eu and Tb, respectively. The intensity of the electric field emission bands (⁵D₀→⁷F₂, 617 nm and ⁵D₄→⁷F₅, 545 nm) of Eu and Tb ions were proportional to the concentration of (NFLX at pH 6.0) and (GFLX at pH 3.5) in acetonitrile with excitation wavelengths (λ_ex) (340 and 395) and (370 and 350 nm) for Eu and Tb ions, respectively. The monitored luminescence intensity of the system showed a good linear relationship with the concentration of NFLX within a range of 5×10^?9–5.8×10^?6 and 5×10^?8–1.0×10^?6 mol L^?1 with a correlation coefficient of 0.990, and for GFLX within a range of 2.4×10^?9–3.2×10^?5 and 5×10^?8–8.0×10^?6 mol L^?1 with a correlation coefficient of 0.995. The detection limit (LOD) was determined as 3.0×10^?9 and 1.0×10^?8 mol L^?1 for NFLX and 1.6×10^?10 and 2.0×10^?8mol L^?1 for GFLX. The limit of quantification (LOQ) is 9×10^?9 and 3.0×10^?8 and 4.8×10^?10 and 6.0×10^?8 in case of Eu and Tb, respectively.     

Highly Selective Optical Detection of Fe3+ Ions in Aqueous Solution Using Label‐Free Silicon Nanocrystals

High brightness amine‐terminated silicon nanocrystals (Si NCs) have been utilized in a simple and rapid assay for the highly selective and sensitive detection of Fe³⁺ via quenching of their strong blue luminescence, without the need for analyte‐specific labeling groups. Sensitive detection of Fe³⁺ is successfully demonstrated, with a linear relationship observed between luminescence quenching and Fe³⁺ concentration from 5 × 10^?6 to 900 × 10^?6m and a limit of detection of 1.3 × 10^?6m . The Si NCs show excellent selectivity toward Fe³⁺ ions, with no quenching of the luminescence signal induced by the presence of Fe²⁺ ions, allowing for solution phase discrimination between the ionic species in different charge states.     

Transport studies on filler-doped chitosan based polymer electrolyte

The room temperature conductivity of the chitosan complex containing 40 wt.% of salt increased from 6.02×10⁻⁶ Scm⁻¹ to 2.10×10⁻⁵ Scm⁻¹ after the addition of 1.0 wt.% aluminosilicate. Conductivity of the electrolyte is contributed from the charge carrier density and ionic mobility. The Rice and Roth model was applied in calculating the mobility, μ and density of ions, n. The number density of ions, n, increases with temperature, while mobility, μ decreases with increasing temperature. This work also suggests that the filler did not change the conduction mechanism of the charge carrier in chitosan-salt-filler complexes but helped to increase the conductivity value of the materials. Paper presented at the International Conference on Functional Materials and Devices 2005, Kuala Lumpur, Malaysia, June 6 – 8, 2005.     

Velocity dependence of azimuthal anisotropies in ion scattering from rhodium {111}

The scattering of He⁺, Ne⁺ and Ar⁺ ions from Rh {111} is measured as a function of the azimuthal angle of the primary ion for an incident polar angle of 70° from the surface normal and an inplane collection angle of 60°. In this case anisotropy is defined as the ratio of the yield of ions scattered having the azimuth of 〈110〉 to the yield of those having the azimuth of 〈211〉. The yield ratio for all particle types correlates with particle velocity. The ratio is ～ 1 at low velocities, decreases to ～ 0.2 at 8 × 10⁶$\text{cm}\text{s}$ and then increases to a value of 1.4 at 25 × 10⁶$\text{cm}\text{s}$. Molecular dynamics calculations have been performed for Ne⁺ ion scattering from Rh{111} in order to understand the changes in anisotropy with particle velocity. Qualitative agreement with the experimental results is obtained without having to account for neutralization. A neutralization probability that depends on the collision time improves the agreement between the calculated and experimental yield ratios. A velocity dependent probability will not affect the ratio of yields in two different azimuthal directions.     

Observation of the plasma channel dynamics and Coulomb explosion in the interaction of a high-intensity laser pulse with a He gas jet

We report the first interferometric observations of the dynamics of electron-ion cavitation of relativistically self-focused intense 4 TW, 400 fs laser pulse in a He gas jet. The electron density in a channel 1 mm long and 30 μm in diameter drops by a factor of approximately 10 from the maximum value of ∼8×10¹⁹ cm⁻³. A high radial velocity of the plasma expansion, ∼3.8×10⁸ cm/s, corresponding to an ion energy of about 300 keV, is observed. The total energy of fast ions is estimated to be 6% of the laser pulse energy. The high-velocity radial plasma expulsion is explained by a charge separation due to the strong ponderomotive force. This experiment demonstrates a new possibility for direct transmission of a significant portion of the energy of a laser pulse to ions. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 12, 787–792 (25 December 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Direct observation of the transversal Doppler-shift

An experiment is reported in which the second order Doppler-shift has been determined by the observation of theHα-line emitted by linearly moving hydrogen atoms of velocities 2.53×10⁸ cm/s?9.28×10⁸ cm/s. In contrast to previous experiments the direct transversal observation has been used for the first time. The coefficient of the second order term in the relativistic approximation is found to be 0.52±0.03 which compares good with the theoretical value of 1/2.     

CEMS measurements at low temperatures with Fe-Implanted sapphire

A single crystal of sapphire was implanted with 100-keV⁵⁷Fe to a dose of 3.4×10¹⁵ ions/cm². The charge states of iron ions were investigated with the CEMS technique at low temperatures. The formation of the observed charge states Fe²⁺(1) and Fe²⁺(2) were elucidated in terms of crystal structure.     

Plasma plume induced during laser ablation of graphite

The plasma plume induced during ArF laser ablation of a graphite target is studied. Velocities of the plasma expansion front are determined by the optical time of flight method. Mass center velocities of the emitting atoms and ions are constant and amount to 1.7×10⁴ and 3.8×10⁴ m s⁻¹, respectively. Higher velocities of ions result probably from their acceleration in electrostatic field created by electron emission prior to ion emission. The emission spectroscopy of the plasma plume is used to determine the electron densities and temperatures at various distances from the target. The electron density is determined from the Stark broadening of the Ca II and Ca I lines. It reaches a maximum of ∼9.5×10²³ m⁻³ 30 ns from the beginning of the laser pulse at the distance of 1.2 mm from the target and next decreases to ∼1.2×10²² m⁻³ at the distance of 7.6 mm from the target. The electron temperature is determined from the ratio of intensities of ionic and atomic lines. Close to the target the electron temperature of ∼30 kK is found but it decreases quickly to 11.5 kK 4 mm from the target.     

Registration of accelerated multiply charged ions from the cathode jet of a vacuum discharge

The parameters of Cuⁿ⁺ and Taⁿ⁺ ions from the plasma of a vacuum spark with a voltage up to 2.5 kV and a current rise rate up to 2 × 10¹⁰ A/s are studied using the time-of-flight method. At the initial stage of the discharge, bursts of beams of accelerated multiply charged ions from the cathode flame have been detected. It is established that the charge state distribution and energy of a beam are controlled by the initial voltage U ₀ of the capacitor. Upon an increase in this voltage, the average charge of copper ions attains the value +9, and the average charge of tantalum ions can be as high as +20, while the energy attains values of 150 and 350 keV, respectively. It is found that the average energy of ions with charge Z increases in proportion to the charge and is close to the energy eZU ₀ which would have been acquired by ions accelerated in the electric field of the discharge gap.     

Annealing behaviour of iron implanted zirconia

A zirconia film was implanted at room temperature with 100 keV⁵⁷Fe⁺ to a fluence of 8×10¹⁶ ions/cm². The analysis of the Conversion Electron Mössbauer spectra shows that iron is distributed among different charge states: Fe⁰ (in a form of small and large metallic iron aggregates) Fe²⁺ and Fe⁴⁺. The evolution of the iron depth profile deduced from Rutherford backscattering measurements as well as the change in the charge states of iron as a function of annealing under argon atmosphere are presented.