Wavelength Tuning Characteristics of a Vertival Cavity Surface Emitting Laser Diode with an External Short Cavity

The characteristics of a wavelength tunable vertical cavity surface emitting laser diode (VCSEL) with an external short cavity are analyzed, in which the oscillation wavelength can be changed over several tens of nanometers with a nearly constant optical power by slightly altering the external cavity length. Analysis is based on rate equations for the optical power and carrier density, taking the effect of carrier-induced refractive index change into consideration, together with the study of behaviors of a complex resonator. The reflection coefficient r₂ of a laser facet facing the external mirror is shown to affect notably the characteristics of wavelength tuning, optical power and carrier density for a change of the external cavity length. It is also noticed that the wavelength change for this length becomes slower with relatively larger r₂ due to an increasing contribution of the effect of carrier-induced refractive index change, within the optical gain spectrum of the laser diode.     

Power efficiency of a semiconductor laser with an external cavity

Optical feedback modifies the power vs. current diagram of a laser diode as well as its spectrum. Though optimization of the spectral characteristics is usually the main goal in the design of an external cavity source, power efficiency is also important, especially with relatively high power devices, where temperature variations due to dissipation can have an impact on the wavelength stability and on the laser lifetime. A useful parameter to describe the total power efficiency of the stabilized laser, relative to that of the solitary laser, is proposed in this paper. The dependence of this parameter on the characteristics of the active device, and of the external cavity, is investigated.     

改善外腔半导体激光器调谐特性的新方法

基于原有的Littman结构外腔半导体激光器,提出采用一种新的光学方法来实现波长调谐。该方法采用了包含一个旋转楔形棱镜的“光杠杆”系统来降低调谐的机械要求,提高波长选择精度。通过选择不同的楔形棱镜顶角和光线入射角,机械要求可以降低1～2个数量级,波长选择精度也得到相同量级的提高。该方法使Littman结构外腔半导体激光器的调谐特性得到极大的改善,并大大降低了震动的敏感性。     

Studying the extremely short external cavity semiconductor laser with ray tracing method

Based on the ray tracing method, the implicit expression of the output spectrum of the extremely short external cavity semiconductor laser (ESECSL) is derived, and the output spectrum and P-I characteristic of the ESECSL are investigated. The results show that: when the length of external cavity is changed at the order of wavelength, the P-I characteristics of the ESECSL will undergo significant changes; with the variation of the external cavity length, the lasing wavelength of ESECSL will behave cyclical jump in the range of 10 nm. Especially, for the external cavity length changed within the range of 40-70 μm, the jump range of the lasing wavelength will reach the maximum. The simulations well agree with the experimental results reported.     

利用射线追踪法研究超短外腔半导体激光器的输出特性

基于射线追踪法，推导了外腔半导体激光器的连续输出谱的隐函表达式.在此基础上，结合载流子速率方程，对超短外腔半导体激光器的输出谱及P-I特性进行了研究.结果表明：当外腔长度发生波长量级的变化时，超短外腔激光器的P-I特性将发生显著变化；随着外腔长度的变化，超短外腔激光器的激射波长在10nm范围内呈周期性跳变，当外腔长度介于40μm—70μm范围内，激射波长跳变范围最大.理论模拟结果与实验报道结果符合.     

双反馈半导体激光器的混沌特性研究

实验利用双反馈半导体激光器获得了关联维数为3.8的高维混沌光.同时对比分析了双反馈与单反馈两种不同模式产生混沌的区别.结果表明：在反馈强度均为-26 dB时,双反馈产生混沌的关联维数高于单反馈产生混沌的关联维数2.6;双反馈可获得带宽为11 GHz的混沌光,为单反馈产生混沌带宽5.5 GHz的两倍.当双反馈的两个外腔长度不相等时,混沌的自相关曲线能很好的隐藏外腔长度信息,可提高混沌通信的保密性. 关键词： 双反馈 半导体激光器 混沌 带宽     

A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range

The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.     

A 1550-nm linearly tunable CW single-mode external cavity diode laser based on a single-cavity all-dielectric thin-film Fabry–Pérot filter

A 1550-nm linearly tunable CW single-mode external cavity diode laser (ECDL) based on a single-cavity all-dielectric thin-film Fabry–Pérot filter (s-AFPF) is proposed and realized in this paper. Its internal optical components as well as their operation mechanisms are introduced first, and then its longitudinal mode output characteristic is theoretically analyzed. Afterwards, we set up the experimental platform for the output characteristic measurement of this tunable ECDL; under different experimental conditions, we execute accurate and real-time measurements for the output central wavelength, output optical power, output longitudinal mode distribution, and the line-width of the tunable ECDL in its tuning process. By summing up the optimal experimental condition from the measured data, we obtain the optimal tunable relevant parameters ECDL of the tunable ECDL has a linear mode-hop-free wavelength tuning region of 1547.203 nm-1552.426 nm, a stable output optical power in the range of 40 μW-50 μW, and a stable output longitudinal mode distribution of a single longitudinal mode with a line-width in the range of 100 MHz-150 MHz. This tunable ECDL can be used in environmental gas monitoring, atomic and molecular laser spectroscopy research, precise measurements, and so on.     

Experimental study of actively mode-locked semiconductor laser with grating external cavity

In this paper,complete mode-locking optical pulses have been obtained froman actively mode-locked GaAs/GaAlAs semiconductor laser with grating external cavity.Theshortest optical pulse is 7.3 ps measured by second harmonic generation(SHG)autocorrelator.The repetition rate is 995.12 MHz and the central wavelength is 798.4 nm.The effect ofmodulation frequency,modulation current,and bias current on the optical pulses width areinvestigated.     

外腔锁相中二极管激光阵列发光单元间耦合系数分析

推导了外腔中二极管激光阵列各发光单元之间的耦合系数,结果表明：增加外腔长度有利于减小各阶耦合系数的差别和实现“并联耦合”,但是外腔的作用效果下降;降低阵列前端面的反射系数,有利于实现外腔锁相;外腔锁相中并联耦合的单元数越多,激光二极管阵列前端面的反射系数的允许值越小。     

Experimental investigations on the external cavity time signature in chaotic output of an incoherent optical feedback external cavity semiconductor laser

Chaotic dynamics of a semiconductor laser subject to incoherent optical feedback (IOF) are experimentally investigated, and the external cavity time are retrieved and measured from intensity time series of the laser output by using self-correlation function and the mutual information. Through moderating feedback strength and injection current of the laser, the external cavity time signature of the laser chaotic output is effectively attenuated, and then the security of such chaos encryption system can be assured to a certain degree.     

利用外腔改善半导体激光器列阵的远场特性

采用一个由快轴准直透镜和一个高反射率平面镜组成的简单外腔,在腔长为几个cm时实现了半导体激光器列阵中部分单元的锁相运行;DLA远场出现了3个瓣,每瓣发散角为10 mrad左右,对比度为50%;通过控制部分单元的输出,可以抑制旁瓣的能量.     

外腔中半导体二极管激光阵列的高阶侧模锁定

理论分析了外腔较短情况下,宽条半导体二极管激光阵列（LDA）高阶侧模相位锁定的可能性,观察了包含主、旁瓣结构的多侧模远场光强分布。从实验记录结果可以看出,在旁瓣中出现了标志锁相的峰、谷结构,而且该结构的调制度明显高于主瓣中的峰、谷结构的调制度,结果表明：在外腔较短情况下,LDA高阶侧模相位锁定的现象是存在的。     

有源耦合腔激光器锁模特性研究

本文在理论上首次发现有源耦合腔激光器的自启动锁模和时域调制特性,并对其进行了全面的分析和计算.对有源耦合腔激光器的自启动锁模机制和时域调制特性给予详尽的数值计算结果和清晰的物理图象解释,提出在有源耦合腔锁模激光器中可用连续泵浦源代替锁模泵浦源,而且有产生更短的光脉冲可能性.     

Theoretical investigation into spectral characteristics of a semiconductor laser with dual-FBG external cavity

A new theoretical model of the dual-FBG external cavity based on the couple-mode theory has been proposed for controlling the output spectral characteristics of the semiconductor laser with dual-FBG external cavity. The output spectral characteristics have been studied through the analyses of the external cavity length, the FBG length and the fiber length between the two FBGs. The results reveal that the side mode suppression ratio (SMSR), the full wave at half maximum (FWHM), the longitudinal mode interval (LMI) and the stability of the central wavelength are mainly determined by the effective external transmissivity, the fiber length between the two FBGs and the external cavity length, respectively. Furthermore, the rising/falling tendencies of the SMSR and the FWHM are exactly opposite. There exist the maximum of the SMSR and the minimum of the FWHM in a semiconductor laser with dual-FBG external cavity. The increase of the fiber length between the two FBGs results in the exponential decrease of the LMI. The increase of the external cavity length leads to the better stability of the central wavelength.     

外腔中半导体二极管激光阵列的高阶侧模锁定

 理论分析了外腔较短情况下,宽条半导体二极管激光阵列（LDA）高阶侧模相位锁定的可能性,观察了包含主、旁瓣结构的多侧模远场光强分布。从实验记录结果可以看出,在旁瓣中出现了标志锁相的峰、谷结构,而且该结构的调制度明显高于主瓣中的峰、谷结构的调制度,结果表明：在外腔较短情况下,LDA高阶侧模相位锁定的现象是存在的。     

Stable and continuous wavelength tuning of a hybrid semiconductor laser with an erbium-doped fiber external cavity

We present an experimental study of tuning characteristics and wavelength stability of a 1490 nm doped fiber external cavity laser. The standing wave in the erbium-doped fiber in an external-cavity laser causes spatial hole burning and absorption modulation and forms a dynamic grating. The dynamic grating can effectively suppress side modes and eliminate wavelength fluctuations in the laser. The operating wavelength of this hybrid laser is shown for the first time to our knowledge to be smoothly tunable by changing the semiconductor laser drive current or temperature.     

用滑模变结构控制方法实现外腔反馈式半导体激光器的混沌控制

通过增加外腔反馈式半导体激光器的激光反馈时间，使系统处于混沌状态，再采用滑模变结构控制方法实现这种激光器的混沌控制.该方法的优点是系统既能很快地获得稳定的输出激光，又能根据工程需要实现激光输出功率强度的灵活调整.理论分析和数值计算结果表明控制结果具有很强的稳定性和鲁棒性.研究结果对改善实际激光系统稳态输出的快速性、输出功率的灵活可调性和能量转换效率有较好的参考价值. 关键词： 混沌 外腔反馈式半导体激光器 滑模变结构控制 外腔长度     

外腔锁相中二极管激光阵列发光单元间耦合系数分析

 推导了外腔中二极管激光阵列各发光单元之间的耦合系数，结果表明：增加外腔长度有利于减小各阶耦合系数的差别和实现“并联耦合”，但是外腔的作用效果下降；降低阵列前端面的反射系数，有利于实现外腔锁相；外腔锁相中并联耦合的单元数越多，激光二极管阵列前端面的反射系数的允许值越小。     

基于液晶/聚合物光栅的高转化效率有机半导体激光器

采用有机半导体发光材料聚[2-甲氧基-5-(2-乙基己氧基)-1,4-苯乙炔]作为增益介质,低官能度光敏单体制备的液晶/聚合物光栅作为外部反馈谐振腔,制备出参数可独立控制的分离式结构的有机半导体激光器.液晶/聚合物光栅中液晶分子的取向影响光栅折射率调制量,从而影响光栅的反馈能力,最终影响激光器出射激光的性能.通过研究发现决定液晶分子取向的主要有两种与光栅周期有关的作用力,利用这一原理制备不同周期的光栅,光栅周期小于450 nm时,相分离出的液晶分子取向由光栅矢量方向变为光栅沟槽方向,此时光栅的折射率调制量增加,光反馈能力增强.采用周期为395 nm的液晶/聚合物光栅制备二级布拉格散射的有机半导体激光器,相较于大周期光栅(593 nm)制备的激光器,激光阈值由0.70μJ/pulse降低至0.18μJ/pulse,转化效率由2.5%提高到6.4%,且出射激光垂直于基板表面发射,有利于后续的处理及应用.