The exciton absorption in deformed germanium

Absorption spectra at 77° K near the direct (κ = 0) exciton transition are reported for deformed and undeformed single-crystal films of n-type Ge oriented on (111); Elliott's theory is applied. The optical width of the forbidden band for this transition is found as E_{g 0} = (0.8821 ±±0.0002) eV, while the exciton binding energy is found as E_ex(0) = = (0.0016±0.0003) eV for undeformed Ge at 77 ° K. The mean temperature coefficient of E_g for κ = 0 in the range 77 °–297 ° K is (dE_g/ /dT)_p =?3.50 · 10^?4 eV/deg. The effects of thermoelastic deformation on the exciton spectrum give (dE_g/dT)_d = (?1.5±0.1) · 10^?4 eV/deg. The half-width σ ≈ 5 · 10^?4 eV of the exciton peak gives the exciton lifetime as gt ≥ 10^?12 sec.     

Effects of spatial dispersion on exciton absorption

The exciton absorption is studied in the spatially dispersive case. The energy propagation properties of the medium are used to define an appropriate absorption coefficient. The specific example of PbI₂ is considered in order to display the role of spatial dispersion.     

The hopping motion of the self-trapped exciton in NaCl

The decay kinetics and the yield of the π luminescence from the lowest triplet state of the self-trapped exciton have been studied in NaCl containing Li⁺ ions. It is found that the π luminescence band which is observed at 6K is replaced by a luminescence band peaked at 3.34 eV above 77K. The 3.34 eV luminescence band is ascribed to the recombination of the relaxed exciton trapped by a Li⁺ ion, (V_ke)_Li. The decay of the π luminescence induced by an electron pulse and the time change of the luminescence from (V_ke)_Li are explained in terms of the characteristic equation of the diffusion-limited reaction of the lowest triplet self-trapped excitons with the Li⁺ ions. From the analysis of the dependence of the decay rate of the π luminescence on temperature and on the Li⁺ concentration, we found the diffusion constant D of the lowest triplet self-trapped exciton in NaCl to be given by with $\text{D}{}_0\text{= 2.13 × 10}{}^{\mathrm{?3}}\text{cm}{}^2\text{s}$ and E₀ = 0.13 eV. The present result can be regarded as the first clear experimental evidence for the hopping diffusion of the self-trapped exciton in alkali halides. The obtained values of E_a and D₀ are discussed using the small polaron theory. The effect of the anharmonicity on the hopping of the self-trapped excitons is suggested to be significant.     

The exciton absorption spectrum of KPbI3 thin films

The absorption spectrum of KPbI₃ thin films is studied in the spectral range 2–6 eV within the temperature interval 90–470 K. Localization of excitons in the sublattice of the compound containing lead ions is established. Excitons are shown to be of two-dimensional nature.     

The influence of exciton behavior on luminescent characteristics of organic light-emitting diodes

We used N,N′-bis-(1-naphthyl)-N,N′-1-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB), 4,4′-N,N′-dicarbazole-biphenyl (CBP) and tris(8-hydroxyquinoline) aluminum (Alq₃) to fabricate tri-layer electroluminescent (EL) device (device structure: ITO/NPB/CBP/Alq₃/Al). In photoluminescence (PL) spectra of this device, the emission from NPB shifted to shorter wavelength accompanying with the decrease of its emission intensity and moreover the emission intensity of Alq₃ increased relatively with the increase of reverse bias voltage. The blue-shifted emission and the decrease in emission intensity of NPB were attributed to the polarization and dissociation of NPB excitons under reverse bias voltage. The increase of emission intensity of Alq₃ benefited from the recombination of electrons (produced by the dissociation of NPB exciton) and holes (injected from the Al cathode).     

Two-photon absorption in the vicinity of the exciton absorption in CdS

The two-photon absorption spectrum of CdS in the wavelength region of the free and bound exciton lines has been measured using a pulsed dye laser and a differential transmittance technique. An intense absorption band is observed which is possibly due to the interference of the contributions of different intermediate states to the interband two-photon absorption. No absorption is observed which can be attributed to the formation of free excitonic molecules.     

The coupled coherent and incoherent motion of excitons and its influence on the line shape of optical absorption

We treat the coupled coherent and incoherent motion of Frenkel excitons by a model calculation. The model contains the four parametersa (distance of neighbouring atoms),J (exchange interaction integral), γ_o (describing the strength of the local energy fluctuations) and γ₁ (a measure of the fluctuations of the exchange interaction integral, i.e. nonlocal fluctuations). Calculation of the optical absorption of systems with two differently oriented molecules/unit cells results in the Davydov-splitting given by Δ=8J and the linewidth given by Γ=γ_o+γ₁. From the equation of motion of the density matrix we derive a diffusion equation. The diffusion constant is given by \(D = \frac{{a^2 }}{\hbar }\left( {2\gamma _1 + \frac{{J^2 }}{{\gamma _1 + \Gamma }}} \right)\) . Comparison with experiment yields γ_o=70cm^?1, γ₁=0.1 cm^?1 at room temperature and Γ<1 cm^?1 at 4.2 °K. Using these numerical values and the criterium of Haken and Strobl we derive that at room temperature the exciton motion is incoherent and may be described by a hopping process whereas at low temperature it is coherent.     

Coherent motion of an exciton in a semi-infinite chain

An explicit analytic expression for the propagator of a coherent motion of an exciton in a semi-infinite linear chain is derived. The surface relaxation is studied and the probability of an exciton being captured at the surface is calculated. The possibility of using the exponential decay approximation and the generalization to the three-dimensional crystal are also discussed.     

Surface photovoltage in exciton absorption range in CdS

The high resolution, intrinsic spectra of surface photovoltage are reported for semiconducting n-type CdS single crystals. At reduced temperatures (120–160 K) the spectra exhibit three sharp maxima due to A, B and C free exciton transitions. Energy positions of these lines and valence band parameters (spin-orbit and crystal field splittings) estimated from surface photovoltage are in good agreement with values obtained by other methods. The excitonic transitions are very sensitive to surface treatment, i.e. polishing, etching, background illumination and surface doping. The mechanism of direct interaction of free excitons with surface states is proposed to explain exciton lines in surface photovoltage.     

Exact analytic treatment of the influence of the coupled coherent and incoherent triplet exciton motion on the line shape of ESR

Starting from a stochastic Hamiltonian, describing the coupled coherent and incoherent motion of triplet excitons between two differently oriented molecules, an exact expression for the line shape of ESR is derived. Approximations for the limiting cases of nearly coherent and nearly incoherent exciton motion are given.     

Excitation-induced absorption and luminescence at the GaSe exciton

Transmission changes induced by extremely high optical excitation at or below the fundamental direct exciton level of GaSe in the parallel geometry (light propagating parallel to the c-axis) are reported. A double-beam technique is used. The data show that no gain develops up to the highest pumping levels attainable. Careful luminescence measurements, taken concurrently, indicate that the observation of stimulated emission in such geometry, often reported in the literature, is a spurious effect. Optical amplification is possible in the transverse geometry, and is accompanied by the disappearance of discrete exciton levels, including the ground state. A continuous distribution is rather observed, which tails deep into the forbidden energy gap. The possibility of a final plasma state is discussed.     

Angular distribution calculation based on the exciton model taking account of the influence of the Fermi motion and the Pauli principle

An exact closed form solution to the time-integrated master equation of the exciton model is applied to the calculation of the angular distribution for both the preequilibrium and equilibrium decays of the neutron-induced reaction. The distribution probability of two-nucleon collision fromΩ toΩ′ based on the Fermi gas model and the influence of the Fermi motion and the Pauli principle on the shape of the angular distribution are studied in detail. We have concluded that the influence of these effects on the shape of the angular distribution is rather significant for reactions in the energy range of several tens of MeV. As an example to compare with the experiments we have calculated the neutron-induced reaction⁹³Nb(n,n′) atE _n =15 MeV. It seems that the most significant improvement of the present approach is the rise of the backward direction of the double differential cross section for the higher energy emitted neutrons.     

Fine structures of indirect exciton absorption in phosphorus-doped silicon

A new indirect exciton absorption structure has been observed in phosphorus-doped silicon crystals by using a wavelength modulation method. The structure is interpreted in terms of two-electron transitions involving a free exciton and the valley-orbit states of a phosphorus donor, in which the donor is left in the 1s (A₁) singlet state.     

Free exciton optical absorption in direct gap semiconductor alloys

Disorder effects on the optical absorption spectra of free excitons in direct semiconductor alloys are discussed as function of their Bohr radius. The variation of disorder-induced line broadening with alloy composition is described, with a particular emphasis on the violation of the Nordheim's rule for such spatially extended quasiparticles.     

Indirect exciton absorption and Raman scattering in GaAs-AlGaAs superlattices

Longitudinal optic (LO) phonon assisted indirect exciton creation (X_LO), hot carrier relaxation ((e-h)_LO) and Raman scattering phenomena are reported in the optical spectra of GaAs-AlGaAs superlattices. Structures of the same dimensions both with and without double heterostructure confining barriers are studied. For the structures without confining barriers, continuum transitions are suppressed in photoluminescence excitation (PLE) spectra, and as a result the X_LO, (e-h)_LO and Raman peaks are observed. The X_LO absorption peaks are identified from the observation of a clear threshold in PLE at ℏω_LO (36.4 meV) above the heavy hole exciton peak. The intensity of X_LO is a maximum at 6 meV above the threshold, probably due to dissociation into free carriers at the exciton binding energy (6meV) above ℏω_LO. The influence of non-radiative processes on incoherent (PLE) and coherent (Raman) processes is compared.     

Analysis of derivative spectrum of indirect exciton absorption in silicon

It is shown that an analysis of the wavelength modulated absorption spectrum enables us to estimate the transition matrix elements in indirect absorption. The transition matrix elements in silicon are determined to be $\text{0.110}\text{h}\text{?}\text{A}\text{?}$ for indirect absorption with the TO phonon, $\text{0.0367}\text{h}\text{?}\text{A}\text{?}$ for the LO phonon and 0.0178 $\text{h}\text{?}\text{A}\text{?}$ for the TA phonon.     

Indirect exciton transitions in the two-photon absorption in semiconductors

The theory of indirect two-photon exciton transitions is developed from third-order time-dependent perturbation theory. The problem is treated by introducing three different band models; a four-band, a two-band and an intermediate (three-band) model. Selection rules and numerical estimates show that the three-band model is the most favourable for this type of process. An application for the case of GaP is performed.