乙醇对纳米多孔氧化铝薄膜光致发光特性的影响

采用二次阳极氧化法,用乙醇与草酸的混合溶液制备纳米多孔氧化铝薄膜。扫描电子微镜结果显示,乙醇与草酸混合溶液中制备的氧化铝薄膜形貌更规整,有序度更高。光致发光测试结果表明,该混合电解液制备的薄膜的光致发光强度有明显的提高,且随乙醇浓度的增加,发光强度逐渐增大。结合红外反射光谱及X光电子能谱对上述实验现象进行了分析,为多孔氧化铝薄膜掺杂和改善其发光特性提供了新的思路。     

溶胶-凝胶法制备ZnO薄膜及其光致发光性质

利用溶胶-凝胶法在石英衬底上制备了ZnO薄膜,通过测量样品的透射谱、X射线衍射谱、扫描电子显微镜(SEM)图像和光致发光谱研究了其结构特征和发光性质.结果表明:在衍射角2θ=34.32°处出现了对应(002)晶面的强衍射峰,ZnO膜呈多晶状态,具有六角纤矿晶体结构和良好的C轴择优取向,薄膜中颗粒的平均粒径为56nm;光致发光呈多发光峰状,有中心波长为378nm的紫带,520nm绿带,446nm附近的蓝带以及发现未见报道过的绿带以后中心波长为586nm和570nm两个弱发射峰.实验结果表明,制备的ZnO薄膜具有发光特性,但内部与深能级发射相关的结构缺陷浓度还是较高,样品中两个低能量光致发光应来源于晶粒间界的缺陷能级,多缺陷能级导致了多发射峰的光致发光谱.     

Photoluminescence and X-Ray Photoelectron Spectroscopy of p-Type Phosphorus-Doped ZnO Films Prepared by MOCVD

Reproducible p-type phosphorus-doped ZnO （p-ZnO：P） films are prepared on semi-insulating InP substrates by metal-organic chemical vapour deposition technology. The electrical properties of these films show a hole concentration of 9.02 × 10^17 cm ^-3, a mobifity of 1.05 cm^2 /Vs, and a resistivity of 6.6 Ω.cm. Obvious acceptorbound-exciton-related emission and P-induced zinc vacancy （Vzn） emission are observed by low-temperature photoluminescence spectra of the films, and the acceptor binding energy is estimated to be about 125meV. The local chemical bonding environments of the phosphorus atoms in the ZnO are also identified by x-ray photoelectron spectra. Our results show direct experimental evidence that Pzn-2Vzn shallow acceptor complex most likely contributes to the p-type conductivity of ZnO：P films.     

透明导电ZnO薄膜的电化学制备及性能研究

以修饰的ITO玻璃为衬底,以不同浓度Zn(NO3)2.6H2O作为电解质溶液,采用阴极恒流沉积法制备了不同纳米结构的ZnO薄膜。用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、四探针仪(RTS-8)、紫外-可见(UV-Vis)光谱仪、循环伏安等分别表征薄膜的晶相、形貌和厚度、方块电阻、紫外-可见光透过率和氧化还原电位。结果表明:低浓度溶液沉积得到的c轴取向1D ZnO纳米柱和高浓度溶液沉积得到的致密2D六方ZnO纳米片在可见光范围(400～900 nm)的透过率均可高达85%以上,方块电阻约为14.5Ω/□。两种结构的氧化还原电位有显著区别,纳米柱的为-0.54 V(vs.SCE),而纳米片的为-0.72 V(vs.SCE),说明纳米片状的ZnO薄膜具有更为良好的化学稳定性。     

C+注入a-SiNx：H薄膜的微结构及光发射的研究

常温下对低压化学气相沉积制备的纳米硅镶嵌结构的a-SiN_x:H薄膜进行低能量高剂量的C⁺注入后,在800~1200℃高温进行常规退火处理。X射线光电子能谱(XPS)及X射线光电子衍射(XRD)等实验结果表明,当退火温度由800℃升高到1200℃后,薄膜部分结构由SiC_xN_y转变成SiN_x和SiC的混合结构。低温下利用真空紫外光激发,获得分别来自于SiN_x、SiC_xN_y、SiC的,位于2.95,2.58,2.29 eV的光致发光光谱。随着退火温度的升高,薄膜的结构发生了变化,发光光谱也有相应的改变。     

Photoluminescence of ZnO and Mn-Doped ZnO Polycrystalline Films Prepared by Plasma Enhanced Chemical Vapour Deposition

ZnO and Mn-doped ZnO polycrystalline films are prepared by plasma enhanced chemical vapour deposition at low temperature （220℃）, and room-temperature photoluminescence of the films is systematically investigated. Analysis from x-ray diffraction reveals that a11 the prepared films exhibit the wurtzite structure of ZnO, and Mndoping does not induce the second phase in the films. X-ray photoelectron spectroscopy confirms the existence of Mn^2＋ ions in the films rather than metalic Mn or Mn^4＋ ions. The emission efficiency of the ZnO film is found to be dependent strongly on the post-treatment and to degrade with increasing temperature either in air or in nitrogen ambient. However, the enhancement of near band edge （NBE） emission is observed after hydrogenation in ammonia plasma, companied with more defect-related emission. Furthermore, the position of NBE shifts towards to high-energy legion with increasing Mn-doped concentration due to Mn incorporation into ZnO lattice.     

Temperature-Dependent Photoluminescence of Silicon Nanoporous Pillar Array

Silicon nanoporous pillar array （Si-NPA） is a micron-nanometer hierarchical structure which might be used as functional substrates for constructing optoelectronic nanodevices. This makes understanding the photolumines- cence （PL） from Si-NPA important. We measure the PL of Si-NPA in the range of 11-300K. By analyzing the evolution of the peak energy and intensity with temperature, the ultraviolet, blue, orange and red PL bands from Si-NPA are attributed to the radiative recombination through the deep-levels in silicon oxide, oxygen-related defect states in silicon nanocrystallites （nc-Si）, band-to-band transition within nc-Si, and surface/interface states of nc-Si or between nc-Si and SiOx, respectively. At least two non-radiative recombination processes, which are activated at different temperature ranges, are proposed for the PL intensity variation with temperature. These results might provide strong foundations for designing and constructing optoelectronic devices based on silicon nanostruetures.     

Photoluminescence Properties of Nanoporous Nanocrystalline Carbonate-Substituted Hydroxyapatite

Luminescence characteristics of an analogue of the mineral component of dental enamel—nanocrystalline B-type carbonate-substituted calcium hydroxyapatite (CHAP)—with defects (nanopores ～2?5 nm in size) on the surface of nanocrystals are studied. It is shown that laser-induced luminescence of CHAP samples synthesized by us occurs in the region of ～515 nm (～2.4 eV) and is related to the existence of CO₃ groups substituting PO₄ groups in the CHAP lattice. It is determined that the luminescence intensity of the CHAP samples depends on the amount of structurally bound CO₃ groups and decreases with decreasing concentration of these intracenter defects in the apatite structure. The results obtained in this work are of potential importance for developing the fundamentals of precision and early detection of caries in human hard dental tissue.     

Photoluminescence study on Eu-implanted GaN

The photoluminescence (PL) properties of Eu-implanted GaN thin films are studied. The experimental results show that the PL intensity is seriously affected by ion implantation conditions. The PL efficiency increases exponentially with annealing temperature increasing up to a maximum temperature of 1050℃. Moreover, the PL intensity for the sample implanted along the channelling direction is nearly twice more than that observed from the sample implanted along the random direction. The thermal quenching of PL intensity from 10K to 300K for sample annealed at 1050℃ is only 42.7%.     

MOCVD生长的GaN和GaN:Mg薄膜的拉曼散射

通过显微拉曼散射对用金属有机化学气相沉积(MOCVD)法在Al2O3衬底上生长的六方相CaN和掺Mg的P型GaN薄膜进行了研究。在两个样品的拉曼散射谱中同时观察到位于640,660cm^-1附近的两个峰。640cm^-1的峰归因于布里渊区边界(L点)最高声学声子的二倍频,而660cm^-1的峰为布里渊区边界的光学声子支或缺陷诱导的局域振动模。掺Mg的GaN在该处的峰型变宽是Mg诱导的缺陷引起的加宽或Mg的局域模与上述两峰叠加的结果。在掺Mg的样品中还观察到276,376cm^-1几个局域模并给予了解释。同时掺Mg的GaN中出现了应力弛豫的现象,掺Mg引起的失配位错和电子-声子相互作用都有可能对E2模的频率产生影响。     

Photoluminescence characteristics of GaN：Si

Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.     

Photoluminescence of bulk Eu-doped GaN crystals

A study of the variation of photoluminescence spectra of bulk Eu-doped GaN samples revealed that the dopant can reside in the crystal in various charge states depending on the total defect concentration in the starting semiconductor host matrix. In crystals with the lowest concentration of shallow-level defects, the ion can exist only in one charge state, Eu³⁺. At higher concentrations of such defects, Eu can be observed in two charge states, Eu²⁺ and Eu³⁺. A rare-earth impurity was found to act as a getter of defects in the starting GaN matrix.     

氮化镓纳米粒子的制备及光致发光研究

采用直接氮化法制备出尺寸不同的GaN纳米粒子,分别利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）和光致发光（PL）谱测试手段对所制样品进行表征和发光特性的研究。结果表明：所制备的两种GaN纳米粒子直径分别为100 nm和300 nm左右。在GaN纳米粒子的PL谱中,中心在357 nm的发射源于本征发光,中心在385 nm的发射带源于浅施主能级到价带的辐射复合,中心在560 nm左右的发射带源于浅施主能级到深受主能级间的施主-受主对辐射发光。     

退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响

采用脉冲激光沉积技术在Si/蓝宝石衬底上制备了ZnO薄膜,结合快速退火设备研究了不同退火温度(500~900℃)及退火气氛(N2,O2)对薄膜的结构及其发光性能的影响。并优化条件得到具有最小半峰全宽及最大晶粒尺寸的薄膜。X射线衍射(XRD)结果表明:氮气氛下退火的ZnO薄膜最佳退火温度为900℃;氧气氛下退火的ZnO薄膜最佳退火温度为800℃。红外(IR)光谱中,退火后Zn-O特征振动峰红移,说明在退火过程中,原子重新排布后占据较低能量位置;同样的退火温度下,氮气氛下退火的薄膜质量更优。同步辐射光电子能谱(synchrotron-based XPS)分别表征了未退火及N2,O2下900℃退火的ZnO薄膜,分峰拟合结果表明氧气氛下退火产生更多的氧空位。结构表征结合光致发光(PL)谱表明绿光的发光峰与氧空位有关。     

掺镨GaN薄膜的微结构与光致发光

利用背散射／沟道（RBS／C）技术、原子力显微镜（AFM）和光致发光（PL）谱研究了掺镨GaN薄膜的微结构和可见光发光特性。RBS／C结果表明,注入Pr后,在注入层引入了晶格损伤;注入样品经1050℃退火后,部分损伤得到恢复,但是晶体质量没有恢复到注入前的状态。AFM结果表明,注入Pr后,表面凹凸不平,而且在注入区引起了膨胀,膨胀幅度达到23．368nm左右。PL结果表明,在850—1050℃退火,发光强度按e指数增加;当退火温度达到1050℃,发光强度最强,经过数据拟合可得Pr^3＋的热激活能为5．8eV。     

UV-Visible Photoluminescence of TiO2 Nanoparticles Prepared by Hydrothermal Method

TiO₂ colloidal nanoparticles and nanocrystals are prepared by hydrolysis of titanium isopropoxide employing a surfactant-free synthetic hydrothermal method. The synthesized samples are characterized by X-ray diffraction (XRD), HRTEM and FTIR. The XRD study confirms that the size of the colloidal nanoparticle is around 4?nm which the HRTEM analysis indicates the sizes of the colloidal nanoparticles are in the range of 2.5?nm. The fluorescence property of the TiO₂ colloidal nanoparticles studied by the emission spectrum confirms the presence of defect levels caused by the oxygen vacancies. We have observed new emission bands at 387?nm,421?nm, 485?nm, 530?nm and 574?nm wavelengths, first one (387?nm) being emission due to annihilation of excitons while remaining four could be arising from surface states. The emission spectrum of annealed nanocrystallites is also having these four band emissions. It is observed that the surface state emission basically consists of two categories of emission.     

Size Control of Porous Silicon Nanoparticles by Electrochemical Perforation Etching

Size‐controlled porous silicon‐based nanoparticles are prepared by pulsed electrochemical etching of single crystal silicon wafers, followed by ultrasonic fracture of the freestanding porous layer. When high‐current density pulses are applied periodically during the porous layer etching process, a porous multilayer results in which porous layers are separated by thin layers of much higher porosity. Ultrasonic fracture selectively cleaves the porous film along these high‐porosity perforations, providing greater size control and improved yields (by 5x) of the resulting porous nanoparticles. The effect of pulse width and repetition rate is systematically studied: tunability of the average nanoparticle size in the range 160–350 nm is demonstrated.     

刻蚀改变InGaN/AlGaN应变多量子阱发光特性

为了分析干法刻蚀对应变多量子阱(SMQWs)发光特性的影响,采用感应耦合等离子体(ICP)刻蚀技术对金属有机物化学气相沉积(MOCVD)生长的InGaN/AIGaN应变多量子阱覆盖层表面刻蚀了约95 nm。通过光致发光(PL)特性表征发现,干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍。干法刻蚀后,量子阱表面呈现高低起伏状形貌,粗糙度提高,出射光在起伏状粗糙形貌表面反复散射,从而逃逸概率增大,有助于光致发光强度增强。理论计算结果得出表面形貌变化引起的量子阱光致发光强度增强因子约为1．3倍。另外,由于所采用的感应耦合等离子体功率较小,刻蚀损伤深度几乎不会达到量子阱阱层,然而干法刻蚀过程中Ar离子隧穿到量子阱阱层内部可能形成新的发光中心,从而使量子阱的发光强度得到提高。     

刻蚀改变InGaN/AIGaN应变多量子阱发光特性

为了分析干法刻蚀对应变多量子阱(SMQWs)发光特性的影响,采用感应耦合等离子体(ICP)刻蚀技术对金属有机物化学气相沉积(MOCVD)生长的InGaN/AlGaN应变多量子阱覆盖层表面刻蚀了约95 nm.通过光致发光(PL)特性表征发现,干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍.干法刻蚀后,量子阱表面呈现高低起伏状形貌,粗糙度提高,出射光在起伏状粗糙形貌表面反复散射,从而逃逸概率增大,有助于光致发光强度增强.理论计算结果得出表面形貌变化引起的量子阱光致发光强度增强因子约为1.3倍.另外,由于所采用的感应耦合等离子体功率较小,刻蚀损伤深度几乎不会达到量子阱阱层,然而干法刻蚀过程中Ar离子隧穿到量子阱阱层内部可能形成新的发光中心,从而使量子阱的发光强度得到提高.