染料敏化太阳能电池二氧化锡光阳极表面原子层沉积氧化铝研究

染料敏化薄膜太阳能电池作为一种新型的太阳能电池吸引了世界范围内的研究。采用二氧化锡代替传统的二氧化钛作为染料敏化太阳能电池的光阳极,使用含有I-/I-3氧化还原电解对的液态电解质。同时,通过原子层沉积(ALD)法,在150℃下使用三甲基铝(TMA)和水作为前驱体和氧化剂沉积氧化铝。并研究了ALD超薄氧化铝包覆二氧化锡颗粒对染料敏化太阳能电池光电转换效率的影响。椭圆偏振仪(SE)分析结果表明ALD每周期沉积速率约为1.2。X射线衍射(XRD)和场发射扫描电镜(FESEM)的结果表明,超薄氧化铝包覆没有影响多孔二氧化锡纳米晶薄膜的晶体结构和表面形貌。紫外-可见光谱(UV-Vis)研究发现随着氧化铝的沉积周期数增加,染料敏化电池光阳极吸附染料的能力增加。最后,对ALD氧化铝对染料敏化太阳能电池性能的影响机理进行了探讨。     

Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction （XRD）, high- resolution transmission electron microscopy （HRTEM）, and x-ray photoelectron spectroscopy （XPS）. The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3 nm and 0.Snm, respectively. XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.     

Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2O3 Ultra-Thin Film on Si Substrate

Ultra-thin Al2O3 dielectric films have been deposited on Si substrates by using trimethyl aluminium （TMA） and water as precursors in an atomic layer deposition （ALD） system. Growth of the interracial layer between ultra-thin Al2O3 and the Si substrate is effectively suppressed by a long-time TMA surface pretreatment of the Si substrate prior to A1203 atomic layer deposition. High resolution transmission electron microscopy （TEM） images show that the thickness of the interracial layer is reduced to be 0.5nm for the sample with TMA pretreatment lasting 3600s. The x-ray photoelectron spectroscopy results indicate that the A1203 film deposited on the TMApretreated Si surface exhibits very good thermal stability. However, a hysteresis of about 50mV is observed in the C- V curve of the samples with the TMA pretreatment.     

染料敏化太阳能电池Sm~(3+)掺杂TiO_2下转换光阳极的制备及性能

用溶胶-水热法制备了Sm3+掺杂的Ti O2粉体(Ti O2∶Sm3+),将其按不同质量分数掺杂到P25基体中,制备了具有下转换功能的光阳极,并将其用于染料敏化太阳能电池中,提高了电池的光电性能。荧光光谱显示,Ti O2∶Sm3+粉体可以将紫外光转换为570~700 nm的可见光。当下转换光阳极中Ti O2∶Sm3+粉体的掺杂质量分数为80%时,短路电流密度达到13.12 m A/cm2,与纯P25光阳极相比,提高了26.5%,转换效率也提高了23.5%。     

Laser Sintering of a Porous TiO2 Film in Dye-Sensitized Solar Cells

We investigate the possibility of modifying the porous structure of TiO₂ films in dye-sensitized solar cells (DSSC) in its sintering by a pulsed Nd:YAG laser (wavelength 1064 nm) to improve their parameters and characteristics. Sintering at various pulse energies enabled a porosity within the range of 0.45 to 0.20. The efficiency of the energy conversion in experimental DSSC specimens with TiO₂ films sintered by an optimum laser-radiation pulse energy of 150 mJ was 20–25% higher than that of commercial solar cells.     

Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition

JETP Letters - Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under...     

染料敏化太阳能电池Eu~(3+),Sm~(3+)掺杂TiO_2下转换光阳极的制备及性能

用溶胶-凝胶法制备了Eu,Sm共掺TiO_2粉体,将其与P25复合,制备了下转换光阳极,用于染料敏化太阳能电池,利用其下转换特性提高电池的光电性能.用荧光光谱对粉体的发光性能进行表征,荧光光谱显示:Eu,Sm共掺TiO_2粉体受463nm光激发可以发射550~700nm的可见光,具有下转换功能.当Eu~(3+)的摩尔掺杂含量为1%,Sm~(3+)的摩尔含量为0.5%时,制备的Eu~(3+),Sm~(3+)共掺下转换光阳极,短路电流达到14.08mA/cm2,与使用Eu~(3+)掺杂TiO_2的下转换光阳极电池相比,提高了32.08%,转换效率也达到5.29%.     

低温原子层沉积氧化铝作为有机电致发光器件的封装薄膜

为了克服传统的原子层深沉积反应温度高于有机材料的玻璃化温度对有机电致发光器件性能产生破坏的缺点,使用低温原子层沉积的方法沉积了Al2O3薄膜,成功地实现了对OLED的薄膜封装。实验中为了抑制环境温度对ALD薄膜均匀性的影响,增加了每个反应周期的抽气时间,从而可以充分地排出反应副产物,抑制了空位的形成,使得薄膜具有较高的均匀性和致密性。微观形貌分析、钙测试以及寿命测试表明,通过增加ALD的PGT,低温制备的薄膜与高温制备的薄膜的均匀性差别较小,且制备过程对OLED器件的光电性能无明显影响。低温制备的薄膜水汽透过率(WVTR)可以达到8.6×10-4g/(m2·d),能够有效地提高有机电致发光器件的寿命。     

Ni/Al2O3催化剂上甲烷的分解温度和时间对积炭的影响

用在线质谱法研究了Ｎｉ／Ａｌ２Ｏ３催化剂上甲烷分解温度和时间对积炭的影响。实验结果表明：在６００－８００℃内甲烷在还原的Ｎｉ／Ａｌ２Ｏ３催化剂上可分解为表面碳物种（即ＮｉｘＣ）和氢气,这种表面碳物种在较低的温度下可扩散进入体相,在高温下可逐步转化为低活性的碳物种。在８００℃下由于表面碳物种不能扩散进入体相,金属镍中心迅速被表面碳物种覆盖,导致甲烷分反应失活。     

Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric

Al0.85In0.15N//AlN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） employing a 3-nm ultra-thin atomic-layer deposited （ALD） Al2O3 gate dielectric layer are reported. Devices with 0.6μm gate lengths exhibit an improved maximum drain current density of 1227mA/mm at a gate bias of 3 V, a peak transeonductance of 328mS/mm, a cutoff frequency fr of 16 GHz, a maximum frequency of oscillation fmax of 45 GHz, as well as significant gate leakage suppression in both reverse and forward directions, compared with the conventionM Al0.85In0.15N/AlN/GaN HEMT. Negligible C - V hysteresis, together with a smaller pinch-off voltage shift, is observed, demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AIInN interface, it is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift, but also the peak transconduetance of the MOS-HEMT is increased slightly. It is an exeitin~ inwrovement in the transconductance performance.     

A Study on Porosity Distribution in Nanoporous TiO2 Photoelectrodes for Output Performance of Dye-Sensitized Solar Cells

Porosity as one of the crucial factors to film morphology affects the overall electrical current-voltage characteristics of dye-sensitized solar cell （DSC）. We search for the short-circuit current density, the open-circuit voltage and the maximum power output as the main functional parameters of DSC closely related to porosity under different film thickness. The theoretical analyses show some exciting results. As porosity changes from 0.41 to 0.75, the short-circuit current density shows the optimal value when the film thickness is 8-10 μm. The open-circuit voltage presents different variation tendencies for the film thicknesses within 1-8 μm and within 10-30 μm. The porosity is near 0.41 and the film thickness is about 10 μm, DSC will have the maximum power output. The theoretical studies also illustrate that given a good porosity distribution, DSC can obtain an excellent short-circuit current characteristic, which agrees well with the experimental results reported in previous literature.     

A study of lattice defects in solids belonging to Al2O3−B2O3 and Al2O3−SiO2 systems by thermoluminescence experiments

Summary Spectrally resolved thermoluminescent emission has been investigated in solids belonging to Al₂O₃−B₂O₃ and Al₂O₃−SiO₂ systems. These solids, which are characterized by a structure like that of alumino-silicate mullite, contain a high density of oxygen and aluminum or boron lacunae. This fact favours the occurrence of both-sign interstitial ions acting as carrier traps. The results show a close similarity with those obtained when studying, with the same experimental method, the thermoluminescent emission of alumina. The overall analysis of data allows for reliable conclusions on the nature of crystal defects in these materials.     

Structural and Tribological Properties of Polyimide/Al2O3/SiO2 Composites in Atomic Oxygen Environment

Effects of atomic oxygen (AO) irradiation on the structural and tribological behaviors of polyimide/Al₂O₃/SiO₂ composites were investigated in a ground-based simulation facility, in which the energy of AO was about 5 eV and the flux was 7.2 × 10¹⁵ cm^?2.s^?1. The structural changes were characterized by X-ray photoelectron spectroscopy (XPS) and attenuated total-reflection FTIR (FTIR-ATR), while the tribological changes were evaluated by friction and wear tests as well as scanning electron microscopy (SEM) analysis of the worn surfaces. It was found that AO irradiation induced the oxidation and degradation of polyimide (PI) molecular chains. The destructive action of AO changed the surface chemical structure, which resulted in changes of the surface morphology and chemical composition of the samples. Friction and wear tests indicated that AO irradiation decreased the friction coefficient but increased the wear rate of both pure and Al₂O₃/SiO₂ filled PIs.     

Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si

Ultrathin films of Al2O3 deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 degrees C. Nuclear reaction profiling with subnanometric depth resolution evidenced mobility of O, Al, and Si species, and angle-resolved x-ray photoelectron spectroscopy revealed the formation of Si-Al-O compounds in near-surface regions, under oxidizing atmosphere at and above 700 degrees C. Under vacuum annealing all species remained essentially immobile. A model is presented based on diffusion-reaction equations capable of explaining the mobilities and reproducing the obtained profiles.     

The effect of supports (Al2O3, Al2O3-CeO2 and Al2O3-CeZrO2) on the nature of gold-species in supported gold catalysts

This work is concerned with the study of Au specimens produced by gold deposition on nanosized mixed oxides (alumina, ceria, zirconia) prepared by the sol-gel method using organometallic precursors. According to X-ray absorption near edge structure, extended X-ray absorption fine structure, transmission electron microscopy data, and ultraviolet-visible and X-ray photoelectron spectroscopy measurements, mixed Al-Ce-Zr oxides are quite effective for stabilization of different gold specimens. The samples pre- treated in hydrogen at 150°C are characterized by the presence of gold Au³⁺ cations located on the surface in slightly disordered octahedral oxygen coordination. Metallic gold nanoparticles with a size of about 2 nm and gold clusters were found in the samples treated in hydrogen at 300°C.     

The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.     

Reactive Deposition of Al 2 O 3 Coatings by Thermal Evaporation in a High-Current Discharge with a Hollow Anode

The conditions of Al2O3-coating deposition in a high-current discharge with an evaporating crucible anode and an additional hollow ionization-system anode are investigated. Using probe diagnostics and optical spectroscopy, it is determined that an additional hollow anode provides an increase in the ion-current density on the surface of the coatings by ~2 times and an increase in the atomic-oxygen concentration by 1.6–2.6 times. The nanocrystalline Al2O3 coatings are deposited by the method of reactive anodic evaporation and the range of operating parameters is determined within which the α-Al2O3 phase is synthesized at a temperature of 600°C.