Lifetimes of image-potential states on the Pt(111) surface probed by time-resolved two-photon photoemission spectroscopy

We have investigated the population dynamics of image-potential states on the clean Pt(111) surface. The first two image-potential states have been resolved exhibiting lifetimes of 26±7 fs and 62±7 fs. Those lifetimes are in contrast to the (111) surfaces of Ag and Cu, where the n=2 state is degenerate with bulk states leading to lifetimes shorter than 20 fs. Received: 30 March 2000 / Accepted: 2 September 2000 / Published online: 12 October 2000     

Femtosecond electron dynamics at adsorbate–metal interfaces and the dielectric continuum model

2 overlayers adsorbed on Cu(111). With increasing number of adsorbate layers the binding energies of the image potential states are found to decrease while their lifetimes increase (except for the second image potential state on 2 to 3 ML Xe/Cu(111)). These trends are most pronounced for nitrogen, where the binding energy of the first image potential state decreases by a factor of 3.5 from 0 to 2 ML N₂/Cu(111); at the same time the lifetime increases from 22 to 700 fs. The results are discussed in the framework of the dielectric continuum model, which approximates the adsorbate layers by a dielectric slab in front of the metal surface. For Xe, the agreement between measured and calculated lifetimes improves significantly if the full dispersion curve of the Xe 6s conduction band is taken into account. Received: 2 November 1998     

Midgap interface states at epitaxial Al/AlAs(001) heterojunctions

Using ab initio pseudopotential calculations, we have investigated the nature of the electronic states with energies within the semiconductor band gap in abrupt, defect-free As-terminated Al/AlAs(001) contacts. Resonant interface states, not accounted for by commonly accepted models, occur at the J-point of the interface Brillouin zone near the Fermi energy in the semiconductor midgap region. They correspond to intermetallic bonds between Al atoms of the semiconductor and those of the metal. The new interface states derive from an interaction between localized states of the Al(001) surface and AlAs conduction band states, mediated by localized states of the non-reconstructed As-terminated AlAs(001) surface.     

Theory of energy- and time-resolved two-photon photoemission from metal surfaces – influence of pulse duration and excitation condition

The theory of energy- and time-resolved two-photon photoemission (2PPE) spectra of metal surfaces is presented using density matrix formulation for a three-level system consisting of an initial occupied, intermediate unoccupied and final photoelectron states. A perturbation expansion method is employed to calculate the energy-resolved 2PPE spectrum for continuous light beams. We have obtained analytical expressions of the 2PPE spectrum corresponding to a step-by-step one-photon process through the intermediate state and a direct two-photon-ionization process via virtual transition. It is demonstrated that the intermediate state can also be populated via the nonresonant virtual process. This indicates an absolute importance of “pure dephasing” associated with the transition between the initial and intermediate states. Evolution of the 2PPE spectrum as a function of the pump photon energy is calculated to demonstrate the conditions under which the intrinsic linewidth (total dephasing time) can be deduced from the lineshape analysis. It is also found that the intensity ratio of the two peaks due to the initial and the intermediate states in 2PPE spectrum can be used to estimate the pure dephasing time. Transient behavior of the excited-state population following pulse excitation is calculated with a focus on how the ultrafast relaxation times of the excited states such as image-potential states of metal surfaces are deduced from the transient 2PPE response observed with a pulse laser with much longer duration. The time-resolved 2PPE spectra are calculated for varying detuning from the resonant excitation from the initial state to the intermediate state. Transient responses of the 2PPE signal due to direct ionization and step-by-step processes are also calculated to demonstrate that the nonresonant former process has an influence on the analysis of the cross-correlation trace of the intermediate state, by which the population relaxation time is estimated. Attempts are also made to apply the present theory to a recent time-resolved 2PPE study of the relaxation dynamics of the image-potential states as well as hot electrons in Cu(100) and Ag(100) surfaces. Received: 23 May 2000 / Accepted: 2 September 2000 / Published online: 12 October 2000     

Parallel excitation pathways in ultrafast interferometric pump-probe correlation measurements of hot-electron lifetimes in metals

Hot electron (E-E_Fermi=0.75 to 1.55 eV) lifetimes for cesiated Cu(100) and Cu(111) surfaces are measured via interferometric time-resolved two-photon photoemission with a 19-fs intensity FWHM mode locked Ti:sapphire laser at 1.55 eV. The data are analyzed using the optical Bloch equations and a laser pulse characterized in situ via surface second-harmonic generation interferometric autocorrelation. It is found that the retrieved hot-electron lifetimes are unphysically fast, and have a strong dependence on the temperature of the sample and the polarization of the laser. A simple explanation for the data is that the measured signal consists of contributions from transitions through both virtual and real intermediate states. Received: 26 July 2000 / Accepted: 8 September 2000 / Published online: 12 October 2000     

Quasiparticle spectrum and optical excitations of semiconductor surfaces

I investigated the spectra of well-ordered semiconductor surfaces within an ab-initio framework. Both the quasi-particle spectrum of electron and hole states and the optical differential reflectivity spectrum were addressed. As examples, I discuss the spectra of three surfaces: Si(111)-(2×1), hydrogenated H:Si(111)-(1×1), and Si adatom-terminated 6H-SiC(0001)-(×). I studied a number of physical features beyond the single-particle band-structure picture. In the case of Si(111)-(2×1), the dangling-bond surface states give rise to a surface exciton which dominates the differential reflectivity spectrum. In the case of 6H-SiC(0001)-(×), a Mott-Hubbard metal-insulator transition is observed. All calculations were performed within many-body perturbation theory, employing single- and two-particle Green functions. The solutions of the corresponding equations of motion yielded the observable excitations, i.e., single-particle electron and hole excitations, as well as bound and resonant electron-hole pair excitations. Received: 28 April 2000 / Accepted: 19 June 2000 / Published online: 7 March 2001     

Electronic excitations on clean and adsorbate-covered oxide surfaces

We have studied electronic excitations at the surfaces of NiO (100), Cr₂O₃(111), and Al₂O₃(111) thin films with Electron Energy Loss Spectroscopy (EELS). On NiO (100) we observe surface electronic excitations in the energy range of the band gap which shift upon adsorption of NO. Ab initio cluster calculations show that these excitations occur within the Ni ions at the oxide surface. The (111) surface of Cr₂O₃ is characterized by distinct excitations which are also strongly influenced by the interaction with adsorbates. Temperature-dependent measurements show that two different states of the surface exist which are separated by an activation energy of about 10 meV. For Al₂O₃(111) we present data for a CO adsorbate. The oxide is quite inert with respect to CO adsorption as indicated by desorption temperatures between 38 K and 67 K. Due to the weak interaction with the substrate the a³II valence excitation of CO shows a clearly detectable vibrational splitting which has not been observed previously for a CO adsorbate in the (sub)monolayer coverage range. For several different adsorption state the lifetimes of the a³II state could be estimated from the halfwidths of the loss peaks, yielding values between 10^–15 s for the most strongly bound species and 10^–14 s for the CO multilayer.     

Quantization of electronic states on metal surfaces

An electron in front of a metal surface experiences an attractive force due to the induced image charge. Band gaps in the band structure can prevent a penetration into the metal along certain directions. The Coulomb-like potential supports bound states in front of the surface which correspond to a hydrogen atom in one dimension. These image states can be measured with high resolution by two-photon photoemission. The adsorption of metals modifies the states. If the electrons can penetrate into the metal, quantum-well states can develop corresponding to standing waves in the overlayer. Image states on small islands show the quantization effects due to the lateral localization. The spectroscopy of image states by two-photon photoemission permits the investigation of growth and morphology of deposited metal layers, a well as the illustration of fundamental quantum-mechanical effects.     

Phase and population decay of image-potential states – the influence of defects

Quantum-phase and population decay of image-potential states have been investigated by two-photon photoemission with femtosecond time resolution. The influence of steps and defects on quasielastic and inelastic scattering processes is illustrated for a vicinal Cu(119) surface and diluted adsorbate layers of CO and Cu on Cu(001). Received: 19 April 2000 / Accepted: 2 September 2000 / Published online: 12 October 2000     

Model Eliashberg functions for surface states

We present a simplified procedure for the analysis of the phonon-induced lifetimes of surface states. The model includes information about the electron and phonon structure and is thus more reliable than procedures based on phonon Debye models. We apply the model to calculate the lifetime broadening of Cu(1 1 1) and Al(0 0 1) surface states. The obtained Eliashberg functions and lifetimes are in reasonable agreement with previous detailed studies.     

Unoccupied surface states and surface barrier in metals

Recent progress in the spectroscopy of empty electronic states at metal surfaces allows for measuring the energy vs. momentum dispersion of both crystal-induced and image-potential surface states with high precision. This allows for deriving the effective barrier potential for an electron near a metal surface with considerable accuracy by comparing the experimental data with corresponding calculations based on the one-step model of inverse photoemission. The method is demonstrated for Cu(100) where four empty surface states are known experimentally.     

Cl2 adsorption on MgO(001) surface supported sodium monolayers: a density functional theory study

The adsorption of Cl₂ Na monolayers supported on the MgO(001) surface has been studied by the density functional method using cluster models embedded in a large array of point charges (PCs). The value of PCs was determined by charge self-consistent technique. The results indicate that Na-promoted MgO(001) surface is an efficient catalyst toward Cl₂ adsorptive decomposition. Besides, it was found that the role of the MgO(001) surface is not passive, which is different from CO adsorption on MgO(001) surface supported Na metal monolayers. The analysis of band and projected density of states indicates that the electron transfer from the surface Mg 3s valence orbital and Na 3s valence orbital to the anti-bonding σ^∗ orbital of Cl₂ is the source of the Cl₂ bond weakening. This is also different from the CO adsorption on MgO(001) surface supported Na metal monolayers, where only the electrons from the Na valence orbital are transferred to the anti-bonding π^∗ orbital of adsorbed CO. Our study suggests that the essence of catalysis is different for CO and Cl₂ adsorption on Na metal monolayers supported an MgO(001) surface.     

Surface-state linewidth from scanning tunnelling spectroscopy

The STM can be used to investigate lifetimes of hot holes in a surface state at low temperatures. We analysed dI/dV data from Ag(111) using detailed tunnelling calculations and a simple model and found an electron self-energy of Σ=4.9±0.6 meV. The corresponding lifetime τ= 67±8 fs is considerably higher than those determined by angle-resolved photoemission, although it remains below theoretical predictions. Spatially resolved dI/dV spectra reveal that the lifetime decreases drastically in proximity to defects such as surface steps. Received: 22 March 1999 / Accepted: 25 June 1999 / Published online: 16 September 1999     

Influence of metallic coatings on the photoluminescence properties of ZnO nanowires

We report on low‐temperature photoluminescence studies of ZnO nanowires coated with thin metallic films. For all analyzed metals (Al, In, Au, Ni, Cu), we find an increased relative intensity of the green deep‐level emission. This is accompanied by a significant reduction of the relative intensity of the surface exciton band. The observed effects are most likely related to the formation of metal induced gap states in the surface region of the ZnO nanowires. A model for the band structure in the surface region of the metal‐coated nanowires is proposed that successfully explains the changes in the photoluminescence spectra after the coating process. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Promotors,poisons and surfactants: Electronic effects of surface doping on metals

The interaction of adsorbates with metal surfaces is discussed. It is shown that the evanescent charge density produced by occupied sp derived surface states yields a considerable contribution to the Pauli repulsion experienced by adsorbate particles with a closed-shell electronic structure, e.g. rare-gases or molecules such as H₂ or N₂. For rare-gases this results in a reduction of the binding energy in the presence of occupied surface states, for molecules this gives rise to an additional contribution to the dissociation barrier. Suitable surface dopants are able to depopulate surface states and thereby to reduce the dissociation barrier. Such dopants can substantially promote catalytic reactions in which the dissociation from the gas phase or a physisorbed precursor is the rate limiting step. In contrast to closed-shell systems the bonding interaction for metal adsorbates on metal substrates is enhanced by occupied surface states. This leads to an extra diffusion barrier at steps, because the surface state amplitude drops to zero at upper step edges. The additional step-edge barrier, which is a kinetic hindrance for layer-by-layer growth, can be reduced by surface dopants depopulating the corresponding surface state. Such dopants promote layer-by-layer growth and act therefore as surfactants. It is concluded that the effect of promoters in catalysis and of surfactants in metal epitaxy is in part due to the same basic mechanism, namely the depopulation of surface states.     

The determination of the lifetime of hot electrons in metals by time-resolved two-photon photoemission: the role of transport effects, virtual states, and transient excitons

Experience has shown that theoretically determined lifetimes of bulk states of hot electrons in real metals agree quantitatively with the experimental ones, if theory fully takes into account the crystal structure and many-body effects of the investigated metal, i.e., if the Dyson equation is solved at the ab initio level and the effective electron–electron interaction is determined beyond the plasmon-pole approximation. Therefore the hitherto invoked transport effect [Knoesel et al.: Phys. Rev. B 57, 12812 (1998)] does not seem to exist. In this paper we show that likewise neither virtual states [Hertel: et al. Phys. Rev. Lett. 76, 535 (1996)] nor damped band-gap states [Ogawa: et al.: Phys. Rev. B 55, 10869 (1997)] exist, but that the hitherto unexplained d-band catastrophe in Cu [Cu(111), Cu(110)] can be naturally resolved by the concept of the transient exciton. This is a new quasiparticle in metals, which owes its existence to the dynamical character of dielectric screening at the microscopic level. This means that excitons, though they do not exist under stationary conditions, can be observed under ultrafast experimental conditions. Received: 30 March 2000 / Accepted: 2 September 2000 / Published online: 12 October 2000     

Interaction of H2O,CO, and H2 with Pt(111) and Pt(111)+K surfaces

The potential energy and surface dipole were calculated as a function of the geometry of the coadsorbed systems using the cluster method and theoretical oscillation frequencies and work function changes were compared with experiment. It was found that the K fills unoccupied Pt 5d states and reduces the local polarizability of the metal. The H₂O molecule binds to the K atom, such that the H atoms point towards the surface inducing an increase in the work function. For the CO molecule a charge transfer (KCO) through the surface stabilizes the bond and induces a change of adsorption place (on-topbridge). The K increases the tendency to H₂ dissociation because of the local decrease of the work function. Zero-point energy effects add important dynamical features to the electronic H₂- surface interaction. Three examples for the Pt(111)-H₂ system are presented: (i) A virtual attractive potential well produced by the softening of the H-H bond near the surface, (ii) a virtual potential barrier for dissociation due to the hindering of molecular rotations at the surface, and (iii) a change in the apparent surface temperature in H₂ desorption processes.     

Oxygen vacancies at oxide surfaces: ab initio density functional theory studies on vanadium pentoxide

The local electronic structure at the V₂O₅ (010) surface is studied by ab initio density functional theory (DFT) methods using gradient-corrected functionals (RPBE) where embedded clusters as large as V₂₀O₆₂H₂₄, representing one or two crystal layers of the substrate, are used as models. Results of local binding and charging of differently coordinated surface-oxygen sites as well as densities of states allow a characterization of the detailed electronic structure of the surface. Electronic and geometric details of surface-oxygen vacancies as well as hydrogen adsorption are studied by appropriate clusters. A comparison of the data, concerning vacancy energies, charging, geometric relaxation, and diffusion, shows sizeable variations between different oxygen sites and can give further insight into possible mechanisms of surface relaxation and reconstruction. Hydrogen is found to stabilize at all surface-oxygen sites forming surface-OH and H₂O species. As a result, the binding of surface oxygen with its vanadium neighbors is weakened. Therefore, the presence of hydrogen at the oxide surface facilitates oxygen removal and can contribute to the enhanced yield of oxygenated products near vanadia-based surfaces. Received: 10 April 2000 / Accepted: 25 July 2000 / Published online: 7 March 2001     

Surface states at the metal-electrolyte interface

A survey is given of the study of surface states at metal-electrolyte interfaces, which comprises both crystal-induced and image-potential-induced states. Because the energetic position varies with electrode potential, surface states can be conveniently investigated in an electrochemical cell by electroreflectance spectroscopy. It is demonstrated that crystal-induced surface states can act as a probe for the potential gradient inside the electric double layer and hence can yield valuable information on interfacial properties. Furthermore, the influence of anion adsorption on surface states, the appearance of surface states in thin metal overlayers with increasing film thickness and the monitoring of surface reconstruction by surface states are briefly discussed.     

Electronic band structures of low-dimensional adsorbate systems: Rare-gas adsorption on transition metals

Angle-resolved photoemission data are dis-cussed for five different Xe adlayers which exhibit electronic structures of different dimensionalities. Xe adsorption on Ni (110)-(1 × 2)-3Hand the (×) R30^° Xe layer on Ru (001) reveal two-dimensional (2D) Xe-derived band structures that are characteristic for hexagonal rare-gas layers. Different Xe 5p dispersion widths on Ni and on Ru are found due to the difference in the Xe-Xe nearest-neighbor distance. For three rare-gas systems (two different Xe coverages on hydrogen-modified Pt (110)-(1 × 2)-H and Kr step decoration on a Pt (997) surface) true one-dimensional (1D) band structures are found. For Xe step adsorption on Pt (997), electronic localized (0D) behavior is observed due to an enlarged Xe-Xe separation. The qualitative differences of the band structures in the case of 2D, 1D and 0D rare-gas systems are demonstrated and are explained by the different dimensionalities of the various structures. Received: 3 August 2000 / Accepted: 4 August 2000 / Published online: 7 March 2001