氚老化对LaNi4.9Al0.1的动力学性能的影响

测定了不同材龄的LaNi4.9Al0.1氘化与去氘化动力学参数,评价了氚老化对LaNi4.9Al0.1动力学性能的影响.研究结果表明,氚老化不改变合金的氘化与去氘化的反应级数;反应速率随老化时间的增加而降低;活化能随老化时间的增加而增加.     

LaNi5氚老化效应的实验研究

测定了老化LaNi5料的解吸等温线及去氘化热力学参数.评价了氚老化对LaNi5贮氢性能的影响.结果表明,氚老化使LaNi5解吸等温线形貌发生重大改变.与新鲜材料相比,老化2140天后,在373 K下,坪台压力降低了约50%,坪斜由0.033到0.130,可逆吸氢容量减少了约1.3 mmol.g-1.老化LaNi5料去氘化反应热力学焓变ΔH和熵变ΔS分别由30.1 kJ.mol-1和105 J.mol-1.K-1增加到44.5 kJ.mol-1和128 J.mol-1.K-1.     

压强对Zr_(67)Ni_(33)非晶合金结构和动力学性能的影响

采用分子动力学的方法模拟Zr_(67)Ni_(33)合金液体在不同压强下快速凝固过程,通过结构分析方法如对分布函数、配位数、Honeycutt-Andersen(HA)键型指数法,以及动力学参数如均方位移、自散射关联函数、非高斯参数研究压强对Zr_(67)Ni_(33)非晶合金局域原子结构和其过冷液体动力学性能的影响.研究结果表明:压强越大,Zr_(67)Ni_(33)非晶合金中Zr-Ni原子间的相互作用越强,体系结构有序性越强,过冷液体中动力学减慢和动力学不均匀现象越显著.     

LaNi_5和LaNi_(4 .7)Al_(0 .3)氢化物柱内氢氘间的排代

进行了室温附近LaNi5和LaNi4 .7Al0 .3 两种材料上气 固间氢氘的排代实验。两种材料的排代效果都较好 ,相比之下 ,LaNi5的更优。可以推测 ,在不要求得到高纯氚的情况下 ,都可以用作氚的冷卸载贮存床。初步的理论探讨揭示 ,气 固界面的化学交换反应是产生排代效应的原因 ,宏观交换规律决定排代效果。理想化的塔板理论模型对排代流出曲线的描述是有效和适用的 ,塔板高度是材料排代性能优劣的指标 ,在确定的排代条件下 ,如果塔板高度小于 1.0cm ,应该认为具有较好的排代效果。     

衬底温度对Ga液滴在Al_(0.4)Ga_(0.6)As表面形成纳米结构的影响

本文研究了不同衬底温度对Ga液滴在Al_(0.4)Ga_(0.6)As表面形成纳米结构的影响,当300℃≤T≤380℃时,Ga液滴演化成纳米孔(Nanohole)和盘状结构(diffusion halo),纳米结构的尺寸随温度升高而增大.当T≥385℃时,盘状结构消失,形成一定平坦的Al_xGa_(1-x)As薄膜,Ga液滴在界面处继续向下刻蚀直至耗尽,形成平均直径为75 nm,平均孔深为5.52 nm的纳米孔.本文还通过盘状结构测出平均扩散长度△R,并拟合出Ga原子在Al_(0.4)Ga_(0.6)As表面的激活能E_A=0.78(±0.01) eV和扩散前因子D_0=0.15(×4.1~(±1))10~(-2 ) cm~2s~(-1).     

多面体共替代对Sr_2(Al_(1–x) Mg_x)(Al_(1–x) Si_(1+x))O_7:Eu~(2+)晶体结构和发光颜色的影响

采用高温固相法合成Sr_(1.98)(Al_(1–x) Mg_x)(Al_(1–x) Si_(1+x))O_7: 2%Eu~(2+)荧光粉完全固溶体,利用X射线衍射、光致发光光谱和光学显微镜进行晶体结构和发光性能的研究. Sr_2Al_2SiO_7和Sr_2MgSi_2O_7同构化合物中包含[MgO_4]、[SiO_4]和[AlO_4]四面体,较大体积的[MgO_4]和较小体积的[SiO_4],共同替代体积相似的[AlO_4],导致[(Si/Al)O_4]收缩和[(Mg/Al)O_4]膨胀,晶胞参数c减少, a和V增大,使Eu~(2+)周围的环境发生改变,晶体场劈裂程度减小,发射峰位从503 nm蓝移至467 nm,实现发光光谱从绿色(0.2384, 0.3919)到蓝色(0.1342,0.1673)的转变.当x为0时,发射峰的半高宽为120 nm, x从0.25增加到1时,半高宽由89 nm逐渐减小至50 nm,多面体的替代会改变荧光粉的发光性能.     

Ca~(2+)离子替代对Sr_4Al_(14)O_(25):Eu~(2+),Dy~(3+)结构和发光性能的影响

采用高温固相反应按化学式Sr4-xCaxAl14O25:Eu2+,Dy3+(x=0,0.8,1.6,2.4,3.2,4)配比原料,合成长余辉发光材料.X射线衍射分析表明当x2.4时,产物物相均为Sr4Al14O25正交结构;当x2.4时,产物物相转变为CaAl4O7单斜结构.对掺Ca量不同,但结构仍保持Sr4Al14O25的样品采用360nm激光照射,发射光谱表明样品发光均由以Eu2+为发光中心的电子4f65d→4f7跃迁所致,并且随着Ca掺入量的增加,样品发射光谱峰位逐渐蓝移.这是由于Ca2+取代Sr2+位置后,导致晶格收缩,影响Eu2+的5d能级劈裂情况,从而影响电子4f65d→4f7跃迁.余辉衰减检测和热释光谱分析发现,不同Ca掺入量的样品余辉衰减快慢不同,是由于其中存在的陷阱能级深度不同,且陷阱能级越深,其余辉时间越长.     

凝胶老化对镱铝共掺SiO_2粉晶化和光谱性能的影响EI北大核心CSCD

采用SiCl_4水解法制备了镱铝共掺石英光纤纤芯原料粉,在O_2氛围下1100℃烧结除羟基处理后,原料粉析出了α-石英相。对镱铝共掺硅酸凝胶进行了常温老化和高压釜高温高压老化处理。测试结果表明,老化处理有效地抑制了镱铝共掺石英玻璃原料粉的析晶行为,Yb^(3+)的荧光强度和荧光寿命得到提高,说明高压釜处理可缩短老化处理时间并提高荧光性能,是制备镱铝共掺石英玻璃原料粉的重要工艺。     

Ca5(PO4)3F:Ce,Mn荧光粉的老化性能研究

通过对一系列Ca5(PO4)3F:Ce和Ca5(PO4)3F:Ce,Mn(以下简称FAP:Ce和FAP:Ce,Mn)样品在荧光灯中和在强紫外光(185nm+254nm)辐照下,发光效率衰减规律及样品漫反射光谱的变化的研究,并与普通卤粉((F,Cl)AP:Sb,Mn)进行对比,发现了该材料的老化速率与样品组分的关系,即随着材料中Ce浓度的增大和氧空位的增多,老化速率变快。并根据Ryan老化理论,对材料老化的物理机制进行了初步的推测。     

Al(111)/Al_3Li(111)的界面性质

运用基于第一性原理的平面波贋势法,计算研究了Al (111)/Al_3Li (111)的界面性质.结果表明:Al (111)/Al_3Li (111)的界面具有三种原子配位关系结构,其中界面处仍保持与基体Al一致的三明治堆垛构型的界面稳定性最好.计算表明,该结构界面最薄弱层,位于Al_3Li (111)内,其分离功最小(约1.53 J/m~2),强度最弱,而基体Al和Al_3Li内部的强度随着到界面距离的增大而逐渐增强.     

铝含量对LaNi_(5-x)Al_x 合金氘化与去氘化热力学函数的影响

测定了LaNi5-xAlx(x =0 .0、0 .1、0 .2、0 .3)的氘化与去氘化热力学参数 ,评价了LaNi5-xAlx 中铝含量对氘化与去氘化热力学函数的影响。研究结果表明 ,合金的坪台压力和吸氘容量随x的增加而降低 ;坪率随x的增加而增加 ;热力学焓变与熵变随x的增加而减少 ;滞后系数Hf 随x的增加而减少。     

Theoretical study of aging effects on LaNi_5 tritium storage

1 Introduction LaNi5 intermetallic compounds, used in storage, separation and purification of hydro- gen and hydrogen isotopes, are known for a high-density storage, easy activation, low pressure, and rapid and reversible absorption and desorption[1-15]. Tritium as an impor- tant material in the nuclear industry is radioactively decaying into 3He with a half-life of 12.3 years. With time, there are many changes in the electronic and physical properties of the tritide for the deposition of 3He…     

Theoretical study of aging effects on LaNi5 tritium storage

The electronic structure and energy of La₂Ni₁₀H₁₂ and La₂Ni₁₀H₁₁He (He is at tetrahedral, octahedral or twelve-face polyhedral interstitials) double cells have been calculated using the density functional theory. Their equilibrium structure, energy bands, electronic density of states (DOS) and X-ray diffraction are presented and discussed. The results indicate the helium-3 produced due to the decay of tritium is most possibly sited at twelve-face polyhedral and octahedral interstices and changes the thermodynamic properties of LaNi₅ tritide system. The changes due to aging such as the reduction in the isotherm plateau pressure, increase of the isotherm plateau slope, and appearance of deeply trapped hydrogen are caused not only by the lattice expansion, but also by modification of the electronic structure due to the presence of He.     

Theoretical study of aging effects on LaNi<Subscript>5</Subscript> tritium storage

The electronic structure and energy of La₂Ni₁₀H₁₂ and La₂Ni₁₀H₁₁He (He is at tetrahedral, octahedral or twelve-face polyhedral interstitials) double cells have been calculated using the density functional theory. Their equilibrium structure, energy bands, electronic density of states (DOS) and X-ray diffraction are presented and discussed. The results indicate the helium-3 produced due to the decay of tritium is most possibly sited at twelve-face polyhedral and octahedral interstices and changes the thermodynamic properties of LaNi₅ tritide system. The changes due to aging such as the reduction in the isotherm plateau pressure, increase of the isotherm plateau slope, and appearance of deeply trapped hydrogen are caused not only by the lattice expansion, but also by modification of the electronic structure due to the presence of He.     

温度对Al_(0.5)Ga_(0.5)As/AlAs分布布喇格反射器的反射谱影响

采用光学传输矩阵理论对Al0.5Ga0.5As/AlAs材料分布布喇格反射器(DBR)进行理论研究,分析了-10℃到100℃的范围内,温度变化对不同DBR结构的反射光谱影响.结果表明:随着温度的升高,传统20周期DBR的反射光谱向长波长方向移动,速率约0.05 nm/℃,其中由线热膨胀系数带来的影响小于0.001 nm/℃.当传统DBR的周期数增大时,温度对DBR光谱反射率的影响在减小,同时DBR的反射谱峰值波长发生红移.为了降低温度对DBR反射光谱的影响,提出一种新型的复式DBR结构.分析指出:该复式DBR比传统DBR有更大的反射光谱半峰宽,基本能覆盖同温度的AlGaInP LED电致发光光谱,这对提高LED的出光效率有现实意义.     

Influence of boron on the giant magnetocaloric effect of La(Fe0.9Si0.1)13

The influences of boron addition on the phase formation, Curie temperature and magnetic entropy change of the NaZn₁₃-type La(Fe_0.9Si_0.1)₁₃ compound have been investigated. Eight boron containing La(Fe_0.9Si_0.1)₁₃B_x samples were prepared with x=0, 0.03, 0.06, 0.1, 0.2, 0.3, 0.5 and 0.6, respectively. Experimental results show that a small amount of B addition in La(Fe_0.9Si_0.1)₁₃ forms the solid solution NaZn₁₃-type structure phase by substituting B for Si or doping B into interstitial position of the lattice, preserves its giant magnetocaloric effects due to their first-order structural/magnetic transition, as well as increase its Curie temperature T_c slightly. The maximum magnetic entropy changes in the magnetic field change of 0–1.6 T are around 20 J kg^–1 K^–1 for the samples with Boron addition less than 0.3, while improving the Curie temperatures by 2 K.     

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18 Al0.82 N/AlN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional(quasi-2D) model, the current–voltage(I–V) characteristics of In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors(HFETs) with different gate lengths are simulated based on the measured capacitance–voltage(C–V) characteristics and I–V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas(2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V·s for the prepared In0.18Al0.82N/AlN/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain–source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density,the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.