InxGa1-xN薄膜的弯曲因子及斯托克斯移动研究

采用常压金属有机化学汽相沉积(MOCVD)技术以Al2O3为衬底在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射／沟道技术、光透射谱、光致发光光谱对InxGa1-xN／GaN／AI2O3样品进行了测试。研究了InxGa1-xN薄膜的弯曲因子及斯托克斯移动。结果表明，采用光透射谱、光致发光光谱得到的InxGa1-xN薄膜的禁带宽度一致，InxGa1-xN薄膜并不存在斯托克斯移动。InxGa1-xN薄膜的In组分分别为0．04，0．06，0．24，0．26时，其弯曲因子分别为3．40,2．36，1．82，3．70。随In组分变化。InxGa1-xN薄膜的弯曲因子的变化并没有一定的规律，表明InxGa1-xN薄膜的禁带宽度随In组分的变化关系复杂。     

Motional dispersions and ratchet effect in inertial systems

We obtain ratchet effect in inertial structureless systems in symmetric periodic potentials where the asymmetry comes from the non-uniform friction offered by the medium and driven by symmetric periodic forces. In the adiabatic limit the calculations are done by extending the matrix continued fraction method and also by numerically solving the appropriate Langevin equation. For finite frequency field drive the ratchet effect is obtained only numerically. In the transient time scales the system shows dispersionless behaviour as reported earlier when a constant force is applied. In the periodic drive case the dispersion behaviour is more complex. In this brief communication we report some of the results of our work.      

Relation between In ion ordering and crystal structure variation in homologous compounds InMO3(ZnO)m (M = Al and In; m = integer)

The relation between the ordering of In ions and the structure variation of homologous compounds InInO3(ZnO)13 and InAlO3(ZnO)m (m = 4, 5, and 13) have been studied by high-resolution transmission electron microscopy. It is revealed that InMO3(ZnO)m is a layered structure, consisting of InO2(1-) (In-O) and MZn(m)Om+1(1+) (M/Zn-O) layers stacked alternatively. Structure variations from the basic one, caused by the ordering of In ions in the M/Zn-O layers, are observed both in In2O3(ZnO)m and InAlO3(ZnO)m. In In2O3(ZnO)m, a modulated structure appearing as zig-zag shaped contrast in the high-resolution image was found and is considered to be caused by the ordering of In ions along the zig-zag contrast area. In InAlO3(ZnO)m, no modulated structure was found. Instead, planar defect structures appearing in Al/Zn-O layers were observed. It is shown that this defect structure is caused by the excess introduction of In ions into the Al/Zn-O layers and the ordering of these In ions. By comparing the results of InInO3(ZnO)m and InAlO3(ZnO)m, it is shown that the reasons for the In ion ordering is the discrepancy between the larger In ion size and the smaller oxygen void for M/Zn ions in M/Zn-O layers.     

First-principles predictions on transition from tetrahedron to octahedron,electronic structures and elastic properties of InAs

In this work, the pressure induced phase transition of InAs is investigated by density functional theory. The first-order phase transition of InAs from zinc-blende (ZB) to the rocksalt (RS) structure occurs at 4.9 GPa accompanies by a 26% volume collapse. It is found that the nearest In and As atoms bonded as covalent bond, but there is no strong interaction between the nearest In–In or As–As atoms. Crystal space of ZB structure is occupied by tetrahedrons (4 In–As covalent bonds) partly with many interstice, and crystal space of RS is fulfilled by close-packed octahedrons (6 In–As covalent bonds). With increasing pressure, rebuild of covalent bond due to variations of electronic structure causes phase transition from ZB to RS structure. Furthermore, directional changes of covalent bond along [100] and [110] bring evident variation of shear on the {100} and {110} planes.     

First-principles calculations of the hole-induced depassivation of SiO2/Si interface defects

The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects. The depassivation of these defects suggests that the deep levels associated with the defects are reactivated, affecting the performance of devices. This work simulates the depassivation reactions between holes and passivated amorphous-SiO₂/Si interface defects (HP_b+h→ P_b+H⁺). The climbing image nudged elastic band method is used to calculate the reaction curves and the barriers. In addition, the atomic charges of the initial and final structures are analyzed by the Bader charge method. It is shown that more than one hole is trapped by the defects, which is implied by the reduction in the total number of valence electrons on the active atoms. The results indicate that the depassivation of the defects by the holes actually occurs in three steps. In the first step, a hole is captured by the passivated defect, resulting in the stretching of the Si-H bond. In the second step, the defect captures one more hole, which may contribute to the breaking of the Si-H bond. The H atom is released as a proton and the Si atom is three-coordinated and positively charged. In the third step, an electron is captured by the Si atom, and the Si atom becomes neutral. In this step, a P_b-type defect is reactivated.     

软X射线辐照引起的铟锡氧化物表面光化学反应

利用XPS原位研究了Mg Kα X射线辐照对ITO表面的影响.结果表明,随着X射线辐射时间的延 长,表面辐照区域In,Sn相对含量增加,而O则逐渐减少,同时,In,Sn3d光电子峰随X射线 辐射的增强而变化.分析说明X射线的辐照导致了ITO表面光化学反应,氧的脱离使In,Sn有 被还原的趋势,受损较重的In明显存在亚氧化态.In,Sn俄歇参数的变化进一步证实ITO表面 发生了光化学反应.并讨论了X射线引起ITO表面光化学反应的机制. 关键词： X射线辐照 光电子能谱 光化学反应     

FTIR单边干涉图相位校正技术的研究与改进

基于傅里叶变换红外光谱仪干涉图的单边过零采样和非对称性,对相位校正技术进行研究和改进。针对Mertz乘积法对切趾函数的匹配性要求高,干涉图非对称切趾旁瓣抑制效果差、光谱分辨率低的缺点,综合Mertz法和Forman法的特点提出一种改进的相位校正方法。采用对称化方法将单边干涉图变换为双边干涉图、对称切趾、傅里叶变换重建功率谱,并采用对称化的双边干涉图傅里叶变换求取高分辨率的相位谱,提高相位校正的精度。通过仿真分析了非对称窗函数较对称窗函数有比较宽的主瓣宽度、高的旁瓣幅值,分辨率降低;实验验证该改进的相位校正方法功率谱误差小、计算量少,且光谱分辨率比较高,达到2cm-1。     

改进C-V分割算法在多光谱成像仪中的应用

为了进一步提高C-V模型的分割速度、降低初始轮廓曲线位置对分割结果的耦合性, 提高多光谱成像仪图像分割效率, 本文提出一种改进的C-V模型。该模型通过将每次迭代得到的距离函数的最大值引入C-V模型的Dirac函数, 对该函数进行自适应参数修正, 以拓宽活动轮廓线的有效作用范围, 进而大大降低分割算法的迭代次数。实验结果表明, 与经典的C-V模型相比, 改进的C-V模型在其终止条件下得到了较理想的分割效果, 降低了初始曲线位置对最终分割结果的影响, 且新模型的收敛速度在原有的基础上至少提高了7倍。改进的C-V模型在实时性及全局性方面都得到了明显改进, 进一步提高了该算法在多光谱成像仪的图像分割方面的鲁棒性。     

Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers

A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.     

Structural and size evolution of indium nanoparticles embedded in aluminum synthesized by ion implantation

The structural and the size evolution of embedded In nanoparticles in Al synthesized by ion implantation and subsequent annealing are experimentally investigated. The average radius r of In nanoparticles is determined as a function of annealing time in a temperature range between 423 K and 453 K. The structural transition of In nanoparticles with the crystallographic orientation In(200)[002] Al(200)[002] is observed to change into In(111)[110] Al(002)[110] with a critical particle radius between 2.3 nm and 2.6 nm. In addition, the growth of In nanoparticles in the annealing process is evidently governed by the diffusion limited Ostwald ripening. By further analyzing the experimental data, values of diffusion coefficient and activation energy are obtained.     

欠稠密等离子体中诱发的偶次相对论谐波

在自生磁场或背景磁场的作用下,等离子体被磁化.磁化后的欠稠密等离子在超强激光的辐射下诱发相对论相干谐波辐射.由于磁场的影响,诱发的相对论相干谐波辐射中产生偶次谐波辐射.从理论上研究了这一现象,导出了谐波辐射的一般性方程,并特别研究了二次谐波辐射的有关参数 关键词： 二次谐波辐射 自生磁场 强激光 欠稠密等离子体     

A stochastic epidemic model on homogeneous networks

In this paper, a stochastic SIS epidemic model on homogeneous networks is considered. The largest Lyapunov exponent is calculated by Oseledec multiplicative ergodic theory, and the stability condition is determined by the largest Lyapunov exponent. The probability density function for the proportion of infected individuals is found explicitly, and the stochastic bifurcation is analysed by a probability density function. In particular, the new basic reproductive number R*, that governs whether an epidemic with few initial infections can become an endemic or not, is determined by noise intensity. In the homogeneous networks, despite of the basic productive number R₀>1, the epidemic will die out as long as noise intensity satisfies a certain condition.     

Stochastic Processes and Mean Field Systems Defined by Nonlinear Markov Chains: An Illustration for a Model of Evolutionary Population Dynamics

In physics, there is a growing interest in studying stochastic processes described by evolution equations such as nonlinear master equations and nonlinear Fokker–Planck equations that define the so-called nonlinear Markov processes and are nonlinear with respect to probability densities. In this context, however, relatively little is known about nonlinear Markov processes defined by nonlinear Markov chains. In the present work, we demonstrate explicitly how the nonlinear Markov chain approach can be carried out by addressing a model for evolutionary population dynamics. In line with the nonlinear Markov chain approach, we derive a measure that tells us how attractive it is for a biological entity to evolve towards a particular biological type. Likewise, a measure for the noise level of the evolutionary process is obtained. Both measures are found to be implicitly time dependent. Finally, a simulation scheme for the many-body system corresponding to the Markov chain model is discussed.     

Vertical manipulation of native adatoms on the InAs(111)A surface

We achieved the repositioning of native In adatoms on the polar III-V semiconductor surface InAs(111)A-(2?×?2) with atomic precision in a scanning tunnelling microscope (STM) operated at 5?K. The repositioning is performed by vertical manipulation, i.e., a reversible transfer of an individual adatom between the surface and the STM tip. Surface-to-tip transfer is achieved by a stepwise vibrational excitation of the adsorbate-surface bond via inelastic electron tunnelling assisted by the tip-induced electric field. In contrast, tip-to-surface back-transfer occurs upon tip-surface point contact formation governed by short-range adhesive forces between the surface and the In atom located at the tip apex. In addition, we found that carrier transport through the point contact is not of ballistic nature but is due to electron tunnelling. The vertical manipulation scheme used here enables us to assemble nanostructures of diverse sizes and shapes with the In adatoms residing on vacancy sites of the (2?×?2)-reconstructed surface (nearest-neighbour vacancy spacing: 8.57??).     

Experimental example of the pseudo-forces method used in characterisation of a structure-borne sound source

In the analysis of machinery noise the aspect of sound source characterisation is of importance. Unlike for airborne sources, no widely applicable methods are available yet for structure-borne sound sources. In previous work a ‘pseudo-forces' methodology was suggested. In this approach fictitious forces on the outer surface replace the internal excitation in a source. The application of this approach is illustrated by experiments using a small air-compressor. In this example the pseudo-forces gave a good reconstruction of the response field (within 3 dB). Confidence intervals are derived for the results, which are 2-3 dB wide. This spread is separated into spread caused by inefficiencies of the method, spread caused by random measurement errors and the spread which is inherently generated by the source itself. These causes together enable the explaination of most of the deviations. Therefore, the pseudo-forces method is expected to serve well for particular structure-borne noise related questions.     

Perfect 3-dimensional lattice actions for 4-dimensional quantum field theories at finite temperature

We propose a two-step procedure to study the order of phase transitions at finite temperature in electroweak theory and in simplified models thereof.In a first step a coarse grained free energy is computed by perturbative methods. It is obtained in the form of a 3-dimensional perfect lattice action by a block spin transformation. It has finite temperature-dependent coefficients. In this way the UV-problem and the infrared problem are separated in a clean way. In the second step the effective 3-dimensional lattice theory is treated in a nonperturbative way, either by the Feynman-Bogoliubov method (solution of a gap equation), by real space renormalization group methods, or by computer simulations.In this paper we outline the principles for ϕ⁴-theory and scalar electrodynamics. The Bałaban-Jaffe block spin transformation for the gauge field is used. It is known how to extend this transformation to the nonabelian case, but this will not be discussed here.     

Distribution- and correlation-functions for a laser amplitude

In this paper a contribution to the nonlinear theory of laser noise is given. The lasing field is treated as a classical random variable, the noise is introduced by the concept of fluctuating dipoles. In order to obtain correlation functions the method of distribution functions is employed. The distribution functions are calculated by the Fokker-Planck equation.     

激光三角法测量中被测物表面特性对测量精度影响的分析

激光三角法测量是现代测量技术中重要的测量方法,但其测量精度受自身系统、环境以及被测物表面特征等因素的影响。针对被测表面的特性是激光三角法产生测量中产生测量误差的主要因素,根据特定颜色所造成误差的重复特性提出了数据标定的改进方法;针对表面粗糙度,通过在光路适当位置安装偏振片有效消除了镜面反射,采用双光路设计有效改善了被测物倾斜带来的误差。最后通过实验验证了改进方法的有效性。     

Formation of the ion fraction of keV-Energy argon ions upon double scattering by al, Ge, and in targets

The charge fraction of Ar⁺ ions singly or doubly scattered by Al, Ge, and In targets is studied by means of low-energy ion scattering spectroscopy. It is shown that the behavior of the ion fraction is not described by the electron tunneling model in the case of forward scattering by an Al target. The characteristic velocities of ions singly and doubly forward and back scattered by Ge and In targets are found.     

Quantum-like microeconomics: Statistical model of distribution of investments and production

In this paper we demonstrate that the probabilistic quantum-like (QL) behavior-the Born’s rule, interference of probabilities, violation of Bell’s inequality, representation of variables by in general noncommutative self-adjoint operators, Schrödinger’s dynamics-can be exhibited not only by processes in the micro world, but also in economics. In our approach the QL-behavior is induced not by properties of systems. Here systems (commodities) are macroscopic. They could not be superpositions of two different states. In our approach the QL-behavior of economical statistics is a consequence of the organization of the process of production as well as investments. In particular, Hamiltonian (“financial energy”) is determined by rate of return.