Chevrel相MxMo6S8化合物电荷转移和Mo原子上4d轨道能级的分裂

本文用配位场方法导出了Chevrel相M_xMo₆S₈化合物中M和Mo₆S₈原子簇间电荷转移和Mo原子上4d轨道能级分裂的解析关系。结合PbMo₆S₈的反射光谱,求得Mo₆S₈原子簇至Pb的电子转移数为1.18,和以前一般文献上认为的两个电子从Pb转移至Mo₆S₈不同。Mo₆上的4d电子数为18.8。 关键词：     

光折变法制备的As2S8条形波导的光阻断效应

实验研究了As₂S₈薄膜光折变现象.提出并采用紫外光激励的方法试制了As₂S₈条形波导，导模激励显示该波导具有良好的导波特性.在此基础上，考察了As₂S₈条波导的光阻断效应，实现了光-光效应的开关功能. 关键词： 光波导技术 2S₈条形波导')" href="#">As₂S₈条形波导 光阻断效应 光激励法     

Bi2S3/BiOCl复合光催化剂的水热合成及其高活性

采用一种简便的水热法在433 K的温度下成功合成了具有不同Bi₂S₃质量分数的Bi₂S₃/BiOCl复合光催化剂,利用各种技术对其进行了表征.在紫外光照射下,以甲基橙水溶液的光催化降解为模型反应,评价了Bi₂S₃/BiOCl复合光催化剂的活性.研究结果表明:与纯Bi₂S₃和纯BiOCl相比,Bi₂S₃/BiOCl样品明显具有更高的光催化性能,尤其当Bi₂S₃在Bi₂S₃/BiOCl中的质量分数为26.5%时,Bi₂S₃/BiOCl复合催化剂的光催化活性与商业P25(TiO₂)的活性非常接近,而这种商业P25在紫外光照射下是公认的高效光催化剂.这种明显提高的光催化活性主要归功于光生电子和空穴在Bi₂S₃和BiOCl形成异质结界面上的有效转移,降低了电子-空穴对的复合.     

Li-Ga-S体系热力学函数的第一性原理计算

采用第一性原理的平面波赝势法计算Li-Ga-S体系LiGa,Li₂S,GaS,Ga₂S₃和LiGaS₂的热力学数据,分析可能发生的化学反应,其中4个化学反应可以生成目标产物LiGaS₂.单质直接化合生成LiGaS₂的反应自由能变较高,Li₂S与Ga₂S₃化合生成LiGaS₂的反应自由能变随温度升高而降低,但体系很难获得Ga₂S₃,LiGa与S生成LiGaS₂和Li₂S与GaS化合生成LiGaS₂的自由能变较小,且体系生成Li₂S,GaS和LiGa的自由能变也较小,由此推断LiGaS₂多晶原料可以通过后两个反应获得.     

污泥低温热解过程中含硫气体释放实验研究

对污水处理厂污泥空干基进行了低温热解实验,研究了N₂、空气和CO₂气氛下六种含硫气体（H₂S、SO₂、CH₃SH、CS₂、C₂H₆S₂和COS）的释放特性,分析了其释放机理。结果表明:污泥低温热解时释放的含硫气体主要以H₂S、SO₂和CH₃SH形态为主,同时伴有少量CS₂、C₂H₆S₂和COS生成。H₂S、SO₂和CH₃SH生成机理以有机硫转化途径为主。FeS₂与CH₄的反应是CS₂生成的可能途径,CH₃SH的存在为C₂H₆S₂的生成提供了条件。CO₂促进了固态有机硫向气态硫的转化,O₂促进了已生成的CH₃SH的分解。     

些V/S,V/Fe/S和Mn/O簇合物溶液化学行为的NMR研究

报道我们对某些V/S,V/Fe/S和Mn/O簇合物溶液化学的核磁研究.(Et₄N)[V₄S₄(C₄H₈NCS₂)₆](1)的¹H NMR谱包含三个宽峰,δ4.77,5.17和7.57,分别归属为端基与桥基配体的α-H.游离配体信号的出现表明了溶液中发生配体与溶剂分子的交换反应.对一系列[VFe₃S₄(R₂ NCS₂)₄]^-簇合物(R₂=OC₄H₈(2),Et₂(3))进行了¹H NMR表征.钒与三个铁中心的配体氢谱被分别归属.对NMR谱的时间跟踪发现位于δ19.6(2)以及δ34.2(3)的信号逐渐增长,这意味着新物种形成.合成反应的动态NMR跟踪指认了新物种为Fe₄S₄(R₂ NCS₂)₄.提出了溶液中簇骼金属原子交换机理.包含H₂O和NO₃配体的单核锰bpy配合物(4)的氢谱指示出这些单齿配体的可交换性.它促使配合物4成为含有两个单核Mn分子的包容化合物.     

三元化合物SnMo6S8的超导转变温度与电子态密度

本文给出,当氧含量增加时,三元化合物SnMo₆S₈的Pauli顺磁磁化率下降。利用BCS理论,由磁化率的变化导出的临界温度的变化与实验符合。 关键词：     

中空TiO2纳米球的制备

报道了一种新的无机模板法合成中空的TiO₂纳米球,该法以TiCl₄为钛源,中空Sb₂S₃微球为模板,利用TiCl₄水解产生的TiO₂沉积在模板的表面,同时产生的HCl消蚀Sb₂S₃,一步制备中空纳米材料。     

Ga2S3-Sb2S3-Ag2S硫系玻璃和光纤的制备及性能研究

本工作确定了一种新型的Ga₂S₃-Sb₂S₃-Ag₂S硫系玻璃体系的玻璃形成区,研究了玻璃的热稳定性和光学性能、稀土离子掺杂玻璃的中红外发光特性以及玻璃的成纤性能,评估了该玻璃在中红外波段的应用潜力.实验结果表明,Ga₂S₃-Sb₂S₃-Ag₂S体系的玻璃形成区为～10%—30%Ga₂S₃,～60%—80%Sb₂S₃和～0—15%Ag₂S(均为摩尔分数);该玻璃具有较宽的红外透过范围(～0.8—13.5μm)、较高的线性折射率(～2.564—2.713@10μm)和较大的三阶非线性折射率(～9.7×10^-14—15.7×10^-14 cm²/W@1.55μm);使用1.32μm激光抽运,稀土离子Dy...     

P2S5/NH4OH处理GaAs(100)表面的电子能谱研究

采用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了P₂S₅/NH₄OH钝化液处理的GaAs(100)表面的微观特性。AES测量表明,在钝化膜和GaAs衬底之间的界面处无O组分,只有P和S组分。XPS测量分析指出,经过P₂S₅/NH₄OH溶液处理后,GaAs表面处Ga₂O₃和As₂O_{3关键词：}     

Preparation of ternary lead molybdenum sulfide with high superconducting transition temperature

The high field superconducting compound PbMo₆S₈ has been prepared by an isothermal chemical vapour transport reaction at 1273 K. The reaction product was single phase PbMo₆S₈ with lattice parameters of $\text{a}{}_0\text{= 6.545}\text{A}\text{?}$, and α = 89° 12′ and has been found to transform to the superconducting state at a midpoint T_c of 14.7 K.     

Low temperature normal state resistance of ternary molybdenum sulfides

The resistance varies as T² over the range of T from T_c to nearly 40 K, in sintered, sputtered and evaporated thin film Cu_xMo₆S₈, and in sputtered PbMo₆S₈ films. In sintered PbMo₆S₈ the resistance varies as T. These results can neither be explained by existing theory for PbMo₆S₈, nor by a Mo₂S₃ phase argument.     

Anisotropy of Hc2 in the Chevrel phases

The anisotropy of the upper critical field of PbMo₆S₈, PbMo₆Se₈ and SnMo₆Se₈ has been measured. All three compounds show an anisotropy of about 20 %, with the maximum H_c2 value when H is perpendicular to the ternary axis. The effective mass model with the mass ratio ε₂≈ 0.69 fits well our results.     

Low temperature structural distortion in the high Tc Chevrel-phase superconductors PbMo6S8 and SnMo6S8

High-resolution powder neutron diffraction data reveal that, at temperatures below 100 K, oxygen-free, high-T_c samples of PbMo₆S₈ and SnMo₆S₈ exhibit a small structural distortion from the R$\text{3}$ rhombohedral space group. The data cannot be refined in a simple P$\text{1}$ triclinic space group as previously reported for EuMo₆S₈ and BaMo₆S₈. Thus, a supercell ordering is suggested.     

Magnetic penetration depth in the Chevrel phase superconductors SnMo6SySe8−y and PbMo6SzSe8−z

We report on transverse field (300 mT)μ ⁺ SR measurements in the Chevrel phase superconductors SnMo₆S_ySe_8−y (y=1, 4, 7, 8) and PbMo₆S_zSe_8−z (z=4.8) using the field cooling procedure (from room temperature down to 2.2 K). The London penetration depth λ_L was determined by the analysis of the fits with a single Gaussian relaxation function and by comparing the measured field distributions with calculated ones, where a broadening due to small random displacements of the vortices was taken into account.     

Electron spin resonance investigation of the structural phase transitions in Alurea6(ClO4)3 and Ga urea6(ClO4)3

Second order structural phase transitions in Alur₆(ClO₄)₃ and Gaur₆(ClO₄)₃ with T_c ～ 300 K are studied by means of ESR on single crystals doped with the analogous Cr(III) compound. The transitions are antiferrodistortive and of the displacive type, the displacements resulting from the condensation of a X₂ mode $\text{(k = (0}\text{1}\text{2}\text{1}\text{2}\text{))}$ of the ClO₄ ions. The ESR parameters have the same temperature dependence as the order parameters and can be described by D and E～φ～. The space group describing the structure changes from S₆² to S₂¹, and the number of domains is multiplied by three. Above 300 K the crystals already consist of two domains, resulting from a ferrodistortive phase transition D_3d⁶ → S₆². The actual transition temperature of the latter phase transition lies at some temperature above the decomposition temperature of the crystals.     

The effect of sulfide substitution in the mixed conductor Cu7PSe6

Cu₇PSe₆ is a mixed conductor exhibiting structural phase transitions above and below room temperature that are accompanied by step-like changes in electrical conductivity. The substitution of S²⁻ for Se²⁻ in Cu₇PSe₆ significantly enhances electrical conductivity at room temperature compared to that observed for the pure compound. In the case of Cu₇P(Se_0.80S_0.20)₆, a nearly temperature-independent electrical conductivity exceeds 1 S/cm with no evidence of any phase transitions throughout the temperature interval 200-400 K. However, the ionic contribution accounts for just 2% of the total electrical conductivity in this solid solution at room temperature.     

Electron hopping and optic phonons in Eu3S4

Raman scattering on single crystals of Eu₃S₄ does not show the allowed q=o phonon modes in the cubic phase and exhibits no new modes in the distorted low temperature phase (T<186 K). Above the Curie temperature T_c=3.8 K the scattering is dominated by a spin-disorder induced one-phonon density of states allowing for the observation of the zone boundary phonon breathing mode of the S^2?ions. This mode does not show any anomaly near the charge order -disorder phase transition T_t=186 K. Temperature tunable spin fluctuations associated with the temperature activated Eu²⁺→Eu³⁺ electron hopping are detected in the scattering intensity, superimposed on the usual thermal spin disorder.     

Stoichiometry of the chevrel phase SnMo6S8

The phase field of the Chevrel phase Sn_xMo_yS₈ was investigated by metallographic methods. A shift of the phase field away from the “ideal” compound SnMo₆S₈ towards the molybdenum-rich side of the phase diagram was observed. The degree of off-stoichiometry could not yet be determined, however, the c/a ratio of the hexagonal lattice parameters can be used to characterize the samples. Measurements of the superconducting transition temperature indicate two superconducting “phases”, which differ in the c/a ratio of the lattice parameters. While phase A showed a linear variation of T^a_c with c/a in the region from 11.0 to 13.0 K phase B was independent of the c/a ratio with a T^b_c = 10.8 ± 0.2 K.